UTC-Unisonic-Tech-4N65L-Q-TM3-T
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UNISONIC TECHNOLOGIES CO., LTD
4N65
Power MOSFET
4A, 650V
N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC
4N65
is a high voltage power MOSFET
designed to have better characteristics, such as fast
switching time, low gate charge, low on-state resistance and
have a high rugged avalanche characteristic. This power
MOSFET is usually used in high speed switching applications
including power supplies, PWM motor controls, high efficient
DC to DC converters and bridge circuits.
FEATURES
* R
DS(ON)
< 2.5
Ω
@ V
GS
= 10 V, I
D
= 2.2A
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
SYMBOL
1 of 9
Copyright © 2017 Unisonic Technologies Co., Ltd
QW-R502-397.O
4N65
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Pin Assignment
Package
Packing
Halogen Free
4N65G-TA3-T
4N65G-TF1-T
4N65G-TF2-T
4N65G-TF3-T
4N65G-TF3T-T
4N65G-TM3-T
4N65G-TMS-T
4N65G-TMS2-T
4N65G-TMS4-T
4N65G-TN3-R
4N65G-TND-R
4N65G-T2Q-T
4N65G-TQ2-R
4N65G-TQ2-T
4N65G-K08-5060-R
1
2
3
S
S
S
S
S
S
S
S
S
S
S
S
S
S
S
4
–
5
–
6
–
7
–
8
–
4N65L-TA3-T
4N65L-TF1-T
4N65L-TF2-T
4N65L-TF3-T
4N65L-TF3T-T
4N65L-TM3-T
4N65L-TMS-T
4N65L-TMS2-T
4N65L-TMS4-T
4N65L-TN3-R
4N65L-TND-R
4N65L-T2Q-T
4N65L-TQ2-R
4N65L-TQ2-T
4N65G-K08-5060-R
TO-220
TO-220F1
TO-220F2
TO-220F
TO-220F3
TO-251
G
G
G
G
G
G
G
G
G
G
G
G
G
G
S
D
D
D
D
D
D
D
D
D
D
D
D
D
D
S
Tube
Tube
–
–
–
–
–
–
–
–
–
–
Tube
–
–
–
–
–
Tube
–
–
–
–
–
Tube
–
–
–
–
–
Tube
–
–
–
–
–
TO-251S
TO-251S2
TO-251S4
TO-252
Tube
–
–
–
–
–
Tube
–
–
–
–
–
–
–
–
–
–
Tube
Tape Reel
Tape Reel
Tube
TO-252D
TO-262
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
TO-263
Tape Reel
Tube
–
–
–
–
–
TO-263
G
D
D
D
D
DFN-8(5×6)
Tape Reel
Note: Pin
Assignment: G: Gate
D: Drain
S: Source
(1) T: Tube, R: Tape Reel
(2) TA3: TO-220, TF1: TO-220F1, TF2: TO-220F2
TF3: TO-220F, TF3T: TO-220F3, TM3: TO-251,
TMS: TO-251S, TMS2: TO-251S2, TN3: TO-252,
TMS4: TO-251S4, TND: TO-252D, T2Q: TO-262,
TQ2: TO-263, K08-5060: DFN-8(5×6)
4N65G-TA3-T
(1)Packing Type
(2)Package Type
(3)Green Package
(3) G: Halogen Free and Lead Free, L: Lead Free
MARKING
PACKAGE
MARKING
TO-220
TO-220F
TO-220F1
TO-220F2
TO-220F3
TO-251
TO-251S2
TO-251S4
TO-252
TO-252D
TO-262
TO-263
TO-251S
DFN-8(5×6)
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-397.O
4N65
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°
С
, unless otherwise specified)
PARAMETER
SYMBOL
V
DSS
V
GSS
I
AR
RATINGS
650
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
Avalanche Current (Note2)
±30
V
4.4
A
Continuous
I
D
4.0
A
Drain Current
Pulsed (Note2)
I
DM
16
A
Single Pulsed (Note3)
Repetitive (Note2)
E
AS
260
mJ
mJ
V/ns
W
Avalanche Energy
E
AR
10.6
4.5
Peak Diode Recovery dv/dt (Note4)
TO-220/TO-262/TO-263
dv/dt
106
TO-220F/TO-220F1
TO-220F3
35
36
W
W
TO-220F2
Power Dissipation
P
D
TO-251/ TO-251S
TO-251S2/TO-251S4
TO-252/TO-252D
DFN-8(5×6)
50
W
30
W
°
С
°
С
°
С
Junction Temperature
Operating Temperature
Storage Temperature
T
J
+150
T
OPR
T
STG
-55 ~ +150
-55 ~ +150
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L = 30mH, I
AS
= 4A, V
DD
= 50V, R
G
= 25
Ω
, Starting T
J
= 25°C
4. I
SD
≤
4.4A, di/dt
≤
200A/
μ
s, V
DD
≤
BV
DSS
, Starting T
J
= 25°C
THERMAL DATA
PARAMETER
PACKAGE
TO-220/TO-262/TO-263
TO-220F/TO-220F1
TO-220F2/TO-220F3
TO-251/ TO-251S
TO-251S2/TO-251S4
TO-252/TO-252D
DFN-8(5×6)
SYMBOL
RATINGS
62.5
UNIT
°
С
/W
Junction to Ambient
θ
JA
110
°
С
/W
75
°
С
/W
°
С
/W
TO-220/TO-262/TO-263
TO-220F/TO-220F1
TO-220F3
1.18
3.5
3.4
°
С
/W
°
С
/W
TO-220F2
Junction to Case
θ
JC
TO-251/ TO-251S
TO-251S2/TO-251S4
TO-252/TO-252D
DFN-8(5×6)
2.5
°
С
/W
°
С
/W
4.17
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-397.O
4N65
Power MOSFET
ELECTRICAL CHARACTERISTICS
(T
C
=25°
С
, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
I
DSS
V
GS
= 0 V, I
D
= 250
μ
A
650
V
V
DS
= 650 V, V
GS
= 0 V
10
μ
A
μ
A
nA
Drain-Source Leakage Current
Gate-Source Leakage Current
V
DS
= 480 V, T
C
=125°
С
V
GS
= 30 V, V
DS
= 0 V
GS
= -30 V, V
DS
= 0 V
100
100
Forward
Reverse
I
GSS
V
-100 nA
△
BV
DSS
/
△
T
J
Breakdown Voltage Temperature Coefficient
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
I
D
=250
μ
A, Referenced to 25°C
0.6
V/°
С
V
GS(TH)
R
DS(ON)
V
DS
= V
GS
, I
D
= 250
μ
A
2.0
4.0
V
V
GS
= 10 V, I
D
= 2.2A
2.4 2.5
Ω
C
ISS
C
OSS
C
RSS
670 750
pF
pF
pF
V
DS
= 25 V, V
GS
= 0V,
Output Capacitance
70
23
90
26
f = 1MHz
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(ON)
t
R
t
D(OFF)
t
F
45
85
ns
ns
Turn-On Rise Time
V
DS
= 325V, I
D
= 4.0A,
R
G
= 25
Ω
(Note 1, 2)
100 140
200 240
130 150
100 120
Turn-Off Delay Time
ns
Turn-Off Fall Time
ns
Total Gate Charge
Q
G
nC
nC
nC
V
V
DS
= 520V,I
D
= 4.0A,
GS
= 10V (Note 1, 2)
Gate-Source Charge
Q
GS
Q
GD
17
20
19
26
Gate-Drain Charge
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
Maximum Continuous Drain-Source
Diode Forward Current
V
SD
V
GS
= 0 V, I
S
= 4.4A
1.4
4.4
V
A
I
S
Maximum Pulsed Drain-Source Diode
Forward Current
I
SM
17.6
A
Reverse Recovery Time
t
rr
V
GS
= 0V, I
S
= 4.4A,
dI
F
/dt = 100 A/
μ
s (Note 1)
250
1.5
ns
Reverse Recovery Charge
Q
RR
μ
C
Note: 1. Pulse Test: Pulse width
≤
300
μ
s, Duty cycle
≤
2%.
2. Essentially independent of operating temperature.
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-397.O
4N65
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Peak Diode Recovery dv/dt Test Circuit
P. W.
Period
V
GS
(Driver)
Period
D=
P.W.
10V
=
V
GS
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
di/dt
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
DS
V
DD
(D.U.T.)
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-397.O
4N65
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
R
L
V
DS
V
DD
V
GS
R
G
D.U.T.
10V
Pulse Width
≤
1
μ
s
Duty Factor
≤
0.1%
Switching Test Circuit
Switching Waveforms
Gate Charge Test Circuit
Gate Charge Waveform
BV
DSS
I
AS
I
D(t)
V
DS(t)
V
DD
Time
Unclamped Inductive Switching Waveforms
t
p
Unclamped Inductive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-397.O
4N65
Power MOSFET
TYPICAL CHARACTERISTICS
Breakdown Voltage Variation vs.
Temperature
On-Resistance Junction Temperature
3.0
2.5
2.0
1.5
1.2
1.1
1.0
1.0
Note:
1. V
GS
=10V
2. I
D
=4A
0.9
0.8
Note:
1. V
GS
=0V
2. I
D
=250µA
0.5
0.0
200
0
-50
200
-100
-50
50
100
150
-100
0
50
100
150
Junction Temperature, T
J
(°
С
)
Junction Temperature, T
J
(°
С
)
On-State Characteristics
Transfer Characteristics
V
GS
Top: 10V
10
10
9V
8V
7V
6V
5.5V
5 V
Bottorm:5.0V
25°
С
1
5.0V
150°
С
1
0.1
Notes:
Notes:
1. V
DS
=50V
2. 250µs Pulse Test
1. 250µs Pulse Test
2. T
C
=25
°
С
0.1
2
4
6
8
10
0.1
1
10
Gate-Source Voltage, V
GS
(V)
Drain-to-Source Voltage, V
DS
(V)
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-397.O
4N65
Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)
Capacitance Characteristics
(Non-Repetitive)
Gate Charge Characteristics
12
10
8
1200
C
iss=
C
gs
+C
gd
(C
ds
=shorted)
C
oss
=C
ds
+C
gd
C
rss
=C
gd
V
DS
=300V
V
DS
=480V
1000
800
C
iss
Notes:
1. V
GS
=0V
V
DS
=120V
C
oss
6
600
400
200
2. f = 1MHz
4
2
C
rss
Note: I
D
=4A
10
Total Gate Charge, Q
G
(nC)
0
0
0.1
20
25
0
5
15
1
10
Drain-SourceVoltage, V
DS
(V)
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-397.O
4N65
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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QW-R502-397.O
