UTC-Unisonic-Tech-6N70KL-TF1-T
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UNISONIC TECHNOLOGIES CO., LTD
6N70K-MT
Power MOSFET
6.0A, 700V
N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC
6N70K-MT
is an N-channel mode power MOSFET
using UTC’s advanced technology to provide customers with a
minimum on-state resistance, high switching speed, low gate
charge and low input capacitance.
The UTC
6N70K-MT
is universally applied in high efficiency
switch mode power supply.
FEATURES
* R
DS(ON)
<1.60
Ω
@ V
GS
=10V, I
D
= 3 A
* High switching speed
SYMBOL
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
6N70KL-TF3-T
Halogen Free
1
2
3
S
S
S
S
S
S
S
S
S
S
TO-220F
TO-220F1
TO-220F2
TO-220F3
TO-251
G
G
G
G
G
G
G
G
G
G
D
D
D
D
D
D
D
D
D
D
Tube
Tube
6N70KG-TF3-T
6N70KG-TF1-T
6N70KG-TF2-T
6N70KG-TF3T-T
6N70KG-TM3-T
6N70KG-TMS-T
6N70KG-TMS2-T
6N70KG-TMS4-T
6N70KG-TN3-R
6N70KG-TND-R
6N70KL-TF1-T
6N70KL-TF2-T
6N70KL-TF3T-T
6N70KL-TM3-T
Tube
Tube
Tube
TO-251S
TO-251S2
TO-251S4
TO-252
6N70KL-TMS-T
6N70KL-TMS2-T
6N70KL-TMS4-T
6N70KL-TN3-R
Tube
Tube
Tube
Tape Reel
Tape Reel
6N70KL-TND-R
Note: Pin Assignment: G: Gate
TO-252D
D: Drain
S: Source
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Copyright © 2015 Unisonic Technologies Co., Ltd
QW-R502-B02.D
6N70K-MT
Power MOSFET
MARKING
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-B02.D
6N70K-MT
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
V
DSS
RATINGS
UNIT
V
Drain-Source Voltage
700
±30
6
Gate-Source Voltage (Note 2)
V
GSS
V
T
C
=25°C
A
Continuous
I
D
Drain Current
T
C
=100°C
3.8
24
6
A
Pulsed
Avalanche Current (Note 2)
I
DM
I
AR
A
A
Single Pulsed (Note 3)
Repetitive (Note 2)
E
AS
E
AR
dv/dt
284
13
2.5
40
mJ
mJ
V/ns
Avalanche Energy
Peak Diode Recovery dv/dt (Note 4)
TO-220F
TO-220F1/TO-220F2
TO-220F3
42
Power Dissipation
P
D
W
TO-251/TO-251S
TO-251S2/TO-251S4
TO-252/TO-252D
TO-220F
55
0.32
TO-220F1/TO-220F2
TO-220F3
0.336
Linear Derarting Factor
P
D
W/°C
TO-251/TO-251S
TO-251S2/TO-251S4
TO-252/TO-252D
0.44
Junction Temperature
Storage Temperature
T
J
+150
°C
°C
T
STG
-55~+150
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 15.77mH, I
AS
= 6A, V
DD
= 50V, R
G
= 27
ꢀ
, Starting T
J
= 25°C
4. I
SD
≤
6A, di/dt
≤
140A/µs, V
DD
≤
BV
DSS
, Starting T
J
= 25°C
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
62.5
UNIT
TO-220F/TO-220F1
TO-220F2/TO-220F3
TO-251/TO-251S
TO-251S2/TO-251S4
TO-252/TO-252D
TO-220F
Junction to Ambient
Junction to Case
θ
JA
°
С
/W
110
3.1
2.9
TO-220F1/TO-220F2
TO-220F3
θ
JC
°
С
/W
TO-251/TO-251S
TO-251S2/TO-251S4
TO-252/TO-252D
2.27
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-B02.D
6N70K-MT
Power MOSFET
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX
UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
I
D
=250µA, V
GS
=0V
700
V
Breakdown Voltage Temperature Coefficient
∆
BV
DSS
/
∆
T
J
I
D
=250µA
0.79
V/°C
µA
V
DS
=700V
25
Drain-Source Leakage Current
Gate-Source Leakage Current
I
DSS
I
GSS
V
DS
=560V, T
C
=125°C
V
GS
=+30V, V
DS
=0V
V
GS
=-30V, V
DS
=0V
250 µA
+100 nA
-100 nA
Forward
Reverse
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
R
DS(ON)
V
DS
=V
GS
, I
D
=250µA
2.0
4.0
V
Static Drain-Source On-State Resistance
DYNAMIC PARAMETERS
Input Capacitance
V
GS
=10V, I
D
=3A (Note 1)
1.35 1.60
ꢀ
C
ISS
C
OSS
C
RSS
480 600
pF
pF
pF
V
GS
=0V, V
DS
=25V,
Output Capacitance
80
100
25
f=1.0MHz (Note 1, 2)
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Turn-ON Delay Time
Rise Time
6.5
t
D(ON)
t
R
t
D(OFF)
t
F
57
60
80
85
ns
ns
V
DD
=30V, I
D
=0.5A, R
G
=25
ꢀ
Turn-OFF Delay Time
Fall-Time
130 140
54 60
ns
ns
Total Gate Charge
Q
G
21.8 32
6.8
nC
nC
nC
V
GS
=10V, V
DS
=50V,
Gate to Source Charge
Gate to Drain Charge
Q
GS
Q
GD
I
D
=1.3A (Note 1, 2)
4.8
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
(Note 3)
I
S
6
A
A
Integral reverse pn-diode in
the MOSFET
I
SM
24
Drain-Source Diode Forward Voltage
(Note 2)
V
SD
I
S
=6A, V
GS
=0V, T
J
= 25°C
1.4
V
Notes: 1. Pulse Test: Pulse width
≤
250µs, Duty cycle
≤
2%
2. Essentially independent of operating temperature
3. Repetitive Rating: Pulse width limited by maximum junction temperature
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-B02.D
6N70K-MT
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Same Type
as DUT
12V
200nF
V
DS
50k
ꢀ
300nF
V
GS
DUT
3mA
Gate Charge Test Circuit
Gate Charge Waveforms
V
DS
90%
R
G
R
D
V
DS
V
GS
10V
10%
DUT
V
GS
t
R
t
d(OFF)
t
d(ON)
t
ON
t
F
t
OFF
Resistive Switching Test Circuit
Resistive Switching Waveforms
1
2
BV
DSS
BV
DSS
-V
DD
2
V
DS
E
AS
=
LI
AS
BV
DSS
I
AS
R
G
I
D
L
10V
I
D
(t)
DUT
t
P
V
DD
V
DD
V
DS
(t)
Time
t
P
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-B02.D
6N70K-MT
Power MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
+
DUT
V
DS
R
G
L
–
I
SD
V
GS
V
DD
Driver
Same Type
as DUT
dv/dt controlled by R
G
I
SD
controlled by pulse period
Gate Pulse Width
D=
V
GS
Gate Pulse Period
10V
(Driver)
I
FM
, Body Diode Forward Current
I
SD
di/dt
(DUT)
I
RM
Body Diode Reverse Current
V
DS
(DUT)
Body Diode Recovery dv/dt
V
SD
V
DD
Body Diode Forward
Voltage Drop
Peak Diode Recovery dv/dt Test Circuit and Waveforms
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-B02.D
6N70K-MT
Power MOSFET
TYPICAL CHARACTERISTICS
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-B02.D
