UTC-Unisonic-Tech-7N80L-TF2-T
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UNISONIC TECHNOLOGIES CO., LTD
7N80
Power MOSFET
7.0A, 800V
N-CHANNEL
POWER MOSFET
1
1
TO-220F
TO-220
DESCRIPTION
The UTC
7N80
is a N-channel mode power MOSFET using
UTC’s advanced technology to provide customers with planar
stripe and DMOS technology. This technology specializes in
allowing a minimum on-state resistance and superior switching
performance. It also can withstand high energy pulse in the
avalanche and commutation mode.
1
1
TO-220F1
TO-220F2
The UTC
7N80
is universally applied in high efficiency switch
mode power supply.
1
1
FEATURES
TO-263
TO-220F3
* R
DS(on)
<1.5
Ω
@ V
GS
=10V, I
D
=3.3A
* High switching speedY
* 100% avalanche tested
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
7N80L-TA3-T
Halogen Free
1
2
3
S
S
S
S
S
S
S
7N80G-TA3-T
7N80G-TF3-T
7N80G-TF1-T
7N80G-TF2-T
7N80G-TF3T-T
7N80G-TQ2-T
7N80G-TQ2-R
TO-220
TO-220F
TO-220F1
TO-220F2
TO-220F3
TO-263
G
G
G
G
G
G
G
D
D
D
D
D
D
D
Tube
Tube
7N80L-TF3-T
7N80L-TF1-T
Tube
7N80L-TF2-T
Tube
7N80L-TF3T-T
Tube
Tube
7N80L-TQ2-T
TO-263
Tape Reel
7N80L-TQ2-R
Note: Pin
Assignment: G: Gate
D: Drain
S: Source
1 of 7
Copyright © 2016 Unisonic Technologies Co., Ltd
QW-R502-523.I
7N80
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
V
DSS
V
GSS
I
D
RATINGS
800
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
±30
V
Continuous
7.0
A
Drain Current
Pulsed (Note 2)
Single Pulsed (Note 3)
Repetitive (Note 2)
I
DM
26.4
670
A
E
AS
mJ
mJ
V/ns
Avalanche Energy
E
AR
16.7
4.5
Peak Diode Recovery dv/dt (Note 4)
TO-220 /TO-263
dv/dt
142
TO-220F/ TO-220F1
TO-220F3
Power Dissipation
P
D
W
52
TO-220F2
54
Junction Temperature
Storage Temperature
T
J
+150
°C
°C
T
STG
-55 ~ +150
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L=27.5mH, I
AS
=7A, V
DD
= 50V, R
G
=25
ꢀ
, Starting T
J
=25°C
4. I
SD
≤
8A, di/dt
≤
200A/
μ
s, V
DD
≤
BV
DSS
, Starting T
J
=25°C
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
62.5
UNIT
°C/W
Junction to Ambient
Junction to Case
θ
JA
TO-220 /TO-263
TO-220F/ TO-220F1
TO-220F3
0.88
θ
JC
°C/W
2.4
TO-220F2
2.31
UNISONIC TECHNOLOGIES CO., LTD
3 of 6
QW-R502-523.I
7N80
Power MOSFET
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX
UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BV
DSS
I
DSS
V
GS
=0V, I
D
=250µA
800
3.0
V
V
DS
=800V, V
GS
=0V
V
DS
=0V ,V
GS
=30V
V
DS
=0V ,V
GS
=-30V
10
µA
nA
nA
Forward
Reverse
100
-100
Gate-Source Leakage Current
I
GSS
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250µA
5.0
1.5
V
Drain-Source On-State Resistance
DYNAMIC PARAMETERS
Input Capacitance
R
DS(ON)
V
GS
=10V, I
D
=3.3A
ꢀ
C
ISS
1200
120
17
pF
pF
pF
V
DS
=25V,V
GS
=0V,f=1.0MHz
Output Capacitance
C
OSS
C
RSS
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge
Q
G
Q
GS
Q
GD
t
D(ON)
t
R
155
11
nC
nC
nC
ns
ns
ns
ns
V
DS
=120V, V
GS
=10V, I
D
=6.6A
Gate-Source Charge
I
G
=3.3mA (Note 1,2)
Gate-Drain Charge
23
Turn-ON Delay Time
65
Turn-ON Rise Time
V
DD
=400V, I
D
=6.6A, R
G
=25
ꢀ
(Note 1,2)
100
300
125
Turn-OFF Delay Time
Turn-OFF Fall Time
t
D(OFF)
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
Drain-Source Diode Forward Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
I
S
I
SM
V
SD
t
rr
6.6
26.4
1.4
A
A
I
S
=6.6A, V
GS
=0V
V
V
GS
=0V, I
S
=6.6A,
dI
F
/dt=100A/
μ
s (Note 1)
650
7.0
ns
μ
C
Q
rr
Notes: 1. Pulse Test: Pulse width
≤
300µs, Duty cycle
≤
2%.
2. Essentially independent of operating temperature.
UNISONIC TECHNOLOGIES CO., LTD
4 of 6
QW-R502-523.I
7N80
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
V
GS
Same Type
as DUT
Q
G
12V
10V
200nF
V
DS
Q
GS
Q
GD
50k
Ω
300nF
V
GS
DUT
3mA
Charge
Gate Charge Waveforms
Gate Charge Test Circuit
Resistive Switching Test Circuit
Resistive Switching Waveforms
1
2
BV
DSS
BV
DSS
-V
DD
V
DS
2
E
AS
=
LI
AS
BV
DSS
I
AS
R
G
I
D
L
10V
I
D
(t)
DUT
t
P
V
DD
V
DD
V
DS
(t)
Time
t
P
Unclamped Inductive Switching Waveforms
Unclamped Inductive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
5 of 6
QW-R502-523.I
7N80
Power MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
+
DUT
V
DS
R
G
L
–
I
SD
V
GS
V
DD
Driver
Same Type
as DUT
dv/dt controlled by R
G
I
SD
controlled by pulse period
Peak Diode Recovery dv/dt Test Circuit & Waveforms
Gate Pulse Width
D=
V
GS
Gate Pulse Period
(Driver
10V
)
I
FM
, Body Diode Forward Current
I
SD
di/dt
(DUT)
I
RM
Body Diode Reverse Current
V
DS
(DUT)
Body Diode Recovery dv/dt
V
SD
V
DD
Body Diode Forward
Voltage Drop
UNISONIC TECHNOLOGIES CO., LTD
6 of 6
QW-R502-523.I
7N80
Power MOSFET
TYPICAL CHARACTERISTICS
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
7 of 6
QW-R502-523.I
