UTC-Unisonic-Tech-DTD143EG-AE3-R

Part #UTC-Unisonic-Tech-DTD143EG-AE3-R
Download 
UTC-Unisonic-Tech-DTD143EG-AE3-R
UNISONIC TECHNOLOGIES CO., LTD  
DTD143E  
NPN SILICON TRANSISTOR  
DIGITAL TRANSISTORS  
(BUILT- IN RESISTORS)  
3
3
1
1
2
2
FEATURES  
SOT-23  
(JEDEC TO-236)  
SOT-323  
* Built-in bias resistors that implies easy ON/OFF applications.  
* The bias resistors are thin-film resistors with complete isolation to  
allow positive input.  
EQUIVALENT CIRCUIT  
1
TO-92  
ORDERING INFORMATION  
Order Number  
Pin Assignment  
Package  
Packing  
Lead Free  
Halogen Free  
1
2
I
3
–
DTD143EG-AE3-R  
DTD143EG-AE3-R  
DTD143EG-T92-B  
DTD143EG-T92-K  
SOT-23  
SOT-323  
TO-92  
G
G
G
G
O
O
I
Tape Reel  
Tape Reel  
Tape Box  
Bulk  
–
I
DTD143EL-T92-B  
DTD143EL-T92-K  
O
O
TO-92  
I
MARKING  
SOT-23 / SOT-323  
TO-92  
DE3E  
1 of 3  
Copyright © 2014 Unisonic Technologies Co., Ltd  
QW-R206-084.D  

DTD143E  
NPN SILICON TRANSISTOR  
ABSOLUTE MAXIMUM RATINGS
(T

A

=25°C, unless others specified)  
PARAMETER  
SYMBOL  
V

CC  

RATINGS  
50  
UNIT  
V
Supply Voltage  
Input Voltage  
Output Current  
V

IN  

-10 ~ +30  
500  
V
I

OUT  

mA  
mW  
mW  
°C  
SOT-23/SOT-323  
TO-92  
200  
Power Dissipation  
P

D  

625  
Junction Temperature  
Storage Temperature  
T

J  

+150  
T

STG  

-55 ~ +150  
°C  
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
ELECTRICAL SPECIFICATIONS
(T

A

=25°C, unless others specified)  
PARAMETER  
SYMBOL  
V

IN(OFF)  

V

IN(ON)  

TEST CONDITIONS  
V

CC

=5V, I

OUT

=100
μ
A  
V

OUT

=0.3V, I

OUT

=20mA  
MIN TYP
 
MAX UNIT  
0.5  
Input Voltage  
V
3
Output Voltage  
Input Current  
V

OUT(ON)

I

OUT

/I

IN

=50mA/2.5mA  
I

IN

V

IN

=5V  
I

OUT(OFF)

V

CC

=50V, V

IN

=0V  
0.1  
0.3  
1.8  
0.5  
V
mA  
μ
A  
Output Current  
DC Current Gain  
Input Resistance  
Resistance Ratio  
Transition Frequency  
h

FE  

R

1  

V

OUT

=5V, I

OUT

=50mA  
47  
3.29 4.7 6.11 K
Ω  
R

2

/R

1  

f

T  

0.8  
1
1.2  
V

CE

=10V, I

E

=
−
50mA, f=100MHz(Note)  
200  
MHz  
Note: Transition frequency of the device  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 3  
QW-R206-084.D  

DTD143E  
NPN SILICON TRANSISTOR  
TYPICAL CHARACTERISTIC  
Output Voltage vs. Output Current  
l
OUT
/l
IN
=20  
DC Current Gain vs. Output Current  
V

OUT

=5V  
1K  
1000  
500  
500  
T

A

=100  
25  
T

A

=100  
25  
200  
200  
100  
50  
-40  
-40  
100  
50  
20  
10  
5
20  
10  
5
2
1
2
1
0.5  
1
2
5
10 20
 
50 100
 
200 500  
0.5  
1
2
5
10 20
 
50 100
 
200 500  
Output Current,
 
I

OUT

(mA)  
Output Current,
 
I

OUT

(mA)  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 3  
QW-R206-084.D