UTC-Unisonic-Tech-HE8050G-D-AE3-R

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UTC-Unisonic-Tech-HE8050G-D-AE3-R
UNISONIC TECHNOLOGIES CO., LTD  
HE8050  
NPN SILICON TRANSISTOR  
LOW VOLTAGE HIGH  
CURRENT SMALL SIGNAL  
NPN TRANSISTOR  
DESCRIPTION  
The UTC
HE8050
is a low voltage high current small signal  
NPN transistor, designed for Class B push-pull 2W audio amplifier  
for portable radio and general purpose applications.  
FEATURES  
*Collector current up to 1.5A  
*Collector-Emitter voltage up to 25V  
*Complimentary to UTC HE8550  
ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Packing  
Package  
Lead Free  
–
Halogen Free  
1
B
E
E
E
E
E
2
C
B
C
C
C
C
3
E
C
B
B
B
B
HE8050G-x-AB3-R  
HE8050G-x-AE3-R  
HE8050G-x-T92-B  
HE8050G-x-T92-K  
HE8050G-x-T9N-B  
HE8050G-x-T9N-K  
SOT-89  
SOT-23  
TO-92  
Tape Reel  
Tape Reel  
Tape Box  
Bulk  
–
HE8050L-x-T92-B  
HE8050L-x-T92-K  
HE8050L-x-T9N-B  
HE8050L-x-T9N-K  
TO-92  
TO-92NL  
TO-92NL  
Tape Box  
Bulk  
Note: Pin Assignment: B: Base  
C: Collector  
E: Emitter  
MARKING  
SOT-89  
TO-92  
SOT-23  
DAG  
TO-92NL  
Copyright © 2015 Unisonic Technologies Co., Ltd  
1 of 4  
QW-R211-018.G  

HE8050  
NPN SILICON TRANSISTOR  
ABSOLUTE MAXIMUM RATINGS
(T

A

= 25
C)  
PARAMETER  
Collector-Base Voltage  
SYMBOL  
V

CBO  

RATINGS  
UNIT  
V
40  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V

CEO  

25  
V
V

EBO  

6
350  
V
SOT-23  
mW  
mW  
W
Collector Dissipation  
P

C  

SOT-89  
500  
TO-92/TO-92NL  
1
Collector Current  
I

C  

T

J  

1.5  
A
Junction Temperature  
Storage Temperature  
+150  
-65 ~ +150  
C  
C  
T

STG  

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
THERMAL DATA  
PARAMETER  
SYMBOL  
RATINGS  
UNIT  
°C/W  
SOT-23  
SOT-89  
TO-92  
110  
40  
Junction to Case  
θ

JC  

80  
TO-92NL  
78  
ELECTRICAL CHARACTERISTICS
(T

A

= 25
C, unless otherwise specified.)  
PARAMETER  
SYMBOL  
BV

CBO  

BV

CEO  

BV

EBO  

I

CBO  

TEST CONDITIONS  
I

C

=100
A, I

E

=0  
I

C

=2mA, I

B

=0  
MIN TYP MAX
 
UNIT  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-Off Current  
40  
25  
6
V
V
I

E

=100
μ
A, I

C

=0  
V

CB

=35V, I

E

=0  
V

EB

=6V, I

C

=0  
V
100  
100  
nA  
nA  
Emitter Cut-Off Current  
I

EBO  

h

FE1  

V

CE

=1V, I

C

=5mA  
V

CE

=1V, I

C

=100mA  
V

CE

=1V, I

C

=800mA  
45  
85  
40  
135  
DC Current Gain  
h

FE2  

160 500  
110  
h

FE3  

Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Current Gain Bandwidth Product  
Output Capacitance  
V

CE(SAT)

I

C

=800mA, I

B

=80mA  
V

BE(SAT)

I

C

=800mA, I

B

=80mA  
0.5  
V
V
1.2  
V

BE  

f

T  

V

CE

=1V, I

C

=10mA  
1.0  
V
V

CE

=10V, I

C

=50mA  
V

CB

=10V, I

E

=0, f=1MHz  
100  
MHz  
pF  
Cob  
9.0  
CLASSIFICATION of h

FE2  

RANK  
C
D
E
RANGE  
120-200  
160-300  
250-500  
N
ISONIC TECHNOLOGIES CO., LTD  
2 of 4  
QW-R211-018.G  

HE8050  
NPN SILICON TRANSISTOR  
TYPICAL CHARACTERISTICS  
Static Characteristics  
DC Current Gain  
0.5  
0.4  
3
I
B
=3.0mA  
I
B
=2.5mA  
I
B
=2.0mA  
10  
V
CE
=1V  
2
10  
0.3  
0.2  
I
B
=1.5mA  
I
B
=1.0mA  
1
10  
I
B
=0.5mA  
0.1  
0
0
10  
0
0.4  
0.8  
1.2  
1.6  
2.0  
-1  
10  
0
1
2
3
10  
10  
10  
10  
Collector-Emitter Voltage ( V)  
Base-Emitter on Voltage  
V
CE
=1V  
Collector Current, Ic (mA)  
Saturation Voltage  
3
4
10  
10  
Ic=10*I
B  
V
BE(SAT)  
2
10  
3
10  
1
2
10  
10  
V
CE(SAT)  
0
1
10  
10  
3
-1  
10  
0
1
2
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
10  
10  
10  
10  
Base-Emitter Voltage (V)  
Collector Current, Ic (mA)  
Current Gain-Bandwidth  
Product  
Collector Output Capacitance  
3
10  
3
10  
V
CE
=10V  
f=1MHz  
I
E
=0  
2
2
10  
10  
1
1
10  
10  
0
0
10  
10  
0
10  
1
2
3
0
1
2
3
10  
10  
10  
10  
10  
10  
10  
Collector Current, Ic (mA)  
Collector-Base Voltage (V)  
N
ISONIC TECHNOLOGIES CO., LTD  
3 of 4  
QW-R211-018.G  

HE8050  
NPN SILICON TRANSISTOR  
TYPICAL CHARACTERISTICS(Cont.)  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
N
ISONIC TECHNOLOGIES CO., LTD  
4 of 4  
QW-R211-018.G