UTC-Unisonic-Tech-HE8050G-D-AE3-R
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UNISONIC TECHNOLOGIES CO., LTD
HE8050
NPN SILICON TRANSISTOR
LOW VOLTAGE HIGH
CURRENT SMALL SIGNAL
NPN TRANSISTOR
DESCRIPTION
The UTC
HE8050
is a low voltage high current small signal
NPN transistor, designed for Class B push-pull 2W audio amplifier
for portable radio and general purpose applications.
FEATURES
*Collector current up to 1.5A
*Collector-Emitter voltage up to 25V
*Complimentary to UTC HE8550
ORDERING INFORMATION
Ordering Number
Pin Assignment
Packing
Package
Lead Free
–
Halogen Free
1
B
E
E
E
E
E
2
C
B
C
C
C
C
3
E
C
B
B
B
B
HE8050G-x-AB3-R
HE8050G-x-AE3-R
HE8050G-x-T92-B
HE8050G-x-T92-K
HE8050G-x-T9N-B
HE8050G-x-T9N-K
SOT-89
SOT-23
TO-92
Tape Reel
Tape Reel
Tape Box
Bulk
–
HE8050L-x-T92-B
HE8050L-x-T92-K
HE8050L-x-T9N-B
HE8050L-x-T9N-K
TO-92
TO-92NL
TO-92NL
Tape Box
Bulk
Note: Pin Assignment: B: Base
C: Collector
E: Emitter
MARKING
SOT-89
TO-92
SOT-23
DAG
TO-92NL
Copyright © 2015 Unisonic Technologies Co., Ltd
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QW-R211-018.G
HE8050
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25
C)
PARAMETER
Collector-Base Voltage
SYMBOL
V
CBO
RATINGS
UNIT
V
40
Collector-Emitter Voltage
Emitter-Base Voltage
V
CEO
25
V
V
EBO
6
350
V
SOT-23
mW
mW
W
Collector Dissipation
P
C
SOT-89
500
TO-92/TO-92NL
1
Collector Current
I
C
T
J
1.5
A
Junction Temperature
Storage Temperature
+150
-65 ~ +150
C
C
T
STG
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
°C/W
SOT-23
SOT-89
TO-92
110
40
Junction to Case
θ
JC
80
TO-92NL
78
ELECTRICAL CHARACTERISTICS
(T
A
= 25
C, unless otherwise specified.)
PARAMETER
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
TEST CONDITIONS
I
C
=100
A, I
E
=0
I
C
=2mA, I
B
=0
MIN TYP MAX
UNIT
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
40
25
6
V
V
I
E
=100
μ
A, I
C
=0
V
CB
=35V, I
E
=0
V
EB
=6V, I
C
=0
V
100
100
nA
nA
Emitter Cut-Off Current
I
EBO
h
FE1
V
CE
=1V, I
C
=5mA
V
CE
=1V, I
C
=100mA
V
CE
=1V, I
C
=800mA
45
85
40
135
DC Current Gain
h
FE2
160 500
110
h
FE3
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
V
CE(SAT)
I
C
=800mA, I
B
=80mA
V
BE(SAT)
I
C
=800mA, I
B
=80mA
0.5
V
V
1.2
V
BE
f
T
V
CE
=1V, I
C
=10mA
1.0
V
V
CE
=10V, I
C
=50mA
V
CB
=10V, I
E
=0, f=1MHz
100
MHz
pF
Cob
9.0
CLASSIFICATION of h
FE2
RANK
C
D
E
RANGE
120-200
160-300
250-500
N
ISONIC TECHNOLOGIES CO., LTD
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QW-R211-018.G
HE8050
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
Static Characteristics
DC Current Gain
0.5
0.4
3
I
B
=3.0mA
I
B
=2.5mA
I
B
=2.0mA
10
V
CE
=1V
2
10
0.3
0.2
I
B
=1.5mA
I
B
=1.0mA
1
10
I
B
=0.5mA
0.1
0
0
10
0
0.4
0.8
1.2
1.6
2.0
-1
10
0
1
2
3
10
10
10
10
Collector-Emitter Voltage ( V)
Base-Emitter on Voltage
V
CE
=1V
Collector Current, Ic (mA)
Saturation Voltage
3
4
10
10
Ic=10*I
B
V
BE(SAT)
2
10
3
10
1
2
10
10
V
CE(SAT)
0
1
10
10
3
-1
10
0
1
2
0.2
0.4
0.6
0.8
1.0
1.2
10
10
10
10
Base-Emitter Voltage (V)
Collector Current, Ic (mA)
Current Gain-Bandwidth
Product
Collector Output Capacitance
3
10
3
10
V
CE
=10V
f=1MHz
I
E
=0
2
2
10
10
1
1
10
10
0
0
10
10
0
10
1
2
3
0
1
2
3
10
10
10
10
10
10
10
Collector Current, Ic (mA)
Collector-Base Voltage (V)
N
ISONIC TECHNOLOGIES CO., LTD
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HE8050
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS(Cont.)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
N
ISONIC TECHNOLOGIES CO., LTD
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