UTC-Unisonic-Tech-HE8550G-D-AE3-R

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UTC-Unisonic-Tech-HE8550G-D-AE3-R
UNISONIC TECHNOLOGIES CO., LTD  
HE8550  
PNP SILICON TRANSISTOR  
LOW VOLTAGE HIGH  
CURRENT SMALL SIGNAL PNP  
TRANSISTOR  
DESCRIPTION  
The UTC
HE8550
is a low voltage high current small signal  
PNP transistor, designed for Class B push-pull 2W audio amplifier  
for portable radio and general purpose applications.  
FEATURES  
* Collector Current up to 1.5A  
* Collector-Emitter Voltage up to 25V  
* Complimentary to UTC
HE8050  
ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Packing  
Package  
Lead Free  
Halogen Free  
1
B
E
E
E
E
E
2
C
B
C
C
C
C
3
E
C
B
B
B
B
HE8550L-x-AB3-R  
HE8550L-x-AE3-R  
HE8550L-x-T92-B  
HE8550L-x-T92-K  
HE8550L-x-T9N-B  
HE8550L-x-T9N-K  
HE8550G-x-AB3-R  
HE8550G-x-AE3-R  
HE8550G-x-T92-B  
HE8550G-x-T92-K  
HE8550G-x-T9N-B  
HE8550G-x-T9N-K  
SOT-89  
SOT-23  
TO-92  
Tape Reel  
Tape Reel  
Tape Box  
Bulk  
TO-92  
TO-92NL  
TO-92NL  
Tape Box  
Bulk  
MARKING  
SOT-89  
TO-92  
SOT-23  
BA  
L: Lead Free  
G: Halogen Free  
TO-92NL  
Copyright © 2014 Unisonic Technologies Co., Ltd  
1 of 4  
QW-R206-031.H  

HE8550  
PNP SILICON TRANSISTOR  
ABSOLUTE MAXIMUM RATING
(T

A

=25
C, unless otherwise specified)  
PARAMETER  
SYMBOL  
V

CBO  

RATINGS  
UNIT  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
-40  
-25  
V

CEO  

V
V

EBO  

-6  
V
SOT-23  
350  
mW  
W
Collector Dissipation  
SOT-89  
P

C  

0.5  
TO-92/TO-92NL  
1
W
Collector Current  
I

C  

T

J  

-1.5  
A
Junction Temperature  
Storage Temperature  
+150  
-65 ~ +150  
C  
C  
T

STG  

Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
ELECTRICAL CHARACTERISTICS
(T

A

=25
C, unless otherwise specified)  
PARAMETER  
SYMBOL  
BV

CBO  

BV

CEO  

BV

EBO  

I

CBO  

TEST CONDITIONS  
I

C

=-100
μ
A, I

E

=0  
MIN TYP
 
MAX UNIT  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-Off Current  
-40  
-25  
-6  
V
V
I

C

=-2mA, I

B

=0  
I

E

=-100
μ
A, I

C

=0  
V
V

CB

=-35V, I

E

=0  
-100  
-100  
nA  
nA  
Emitter Cut-Off Current  
I

EBO  

V

EB

=-6V, I

C

=0  
h

FE1  

V

CE

=-1V, I

C

=-5mA  
V

CE

=-1V, I

C

=-100mA  
V

CE

=-1V, I

C

=-800mA  
I

C

=-800mA, I

B

=-80mA  
I

C

=-800mA, I

B

=-80mA  
V

CE

=-1V,I

C

=-10mA  
V

CE

=-10V,I

C

=-50mA  
V

CB

=-10V, I

E

=0 f=1MHz  
45  
85  
40  
170  
160  
80  
DC Current Gain  
h

FE2  

500  
h

FE3  

Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Base-Emitter Voltage  
V

CE(SAT)  

-0.28 -0.5  
-0.98 -1.2  
-0.66 -1.0  
190  
V
V
V

BE(SAT  

V

BE  

f

T  

)
V
Current Gain Bandwidth Product  
Output Capacitance  
100  
MHz  
pF  
C

ob  

9.0  
CLASSIFICATION OF h

FE2  

RANK  
C
D
E
RANGE  
120-200  
160-300  
250-500  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 4  
QW-R206-031.H  

HE8550  
PNP SILICON TRANSISTOR  
TYPICAL CHARACTERISTICS  
Static Characteristics  
DC Current Gain  
V

CE

=-1V  
10

3  

10

2  

-0.5  
-0.4  
I

B

=-3.0mA  
-0.3  
-0.2  
I

B

=-2.5mA  
I

B

=-2.0mA  
I

B

=-1.5mA  
10

1  

10

0  

I

B

=-1.0mA  
I
B
=-0.5mA  
-0.1  
0
-10

-1  

-10

0  

-10

1  

-10

2  

-10

3  

-0  
-0.4  
-0.8 -1.2 -1.6 -2.0  
Collector-Emitter Voltage ( V)  
Collector Current, I

C

(mA)  
Base-Emitter on Voltage  
V

CE

=-1V  
Saturation Voltage  
-10

3  

-10

2  

-10

4  

-10

3  

I

C

=10*I

B  

V

BE(SAT)  

-10

1  

-10

0  

-10

2  

-10

1  

V

CE(SAT)  

-10

-1  

-10

0  

-10

1  

-10

2  

-10

3  

0
-0.2 -0.4  
-0.6  
-0.8 -1.0  
Collector Current, I

C

(mA)  
Base-Emitter Voltage (V)  
Current Gain-Bandwidth Product  
V

CE

=-10V  
Collector Output Capacitance  
f=1MHz  
10

3  

10

2  

10

3  

10

2  

I

E

=0  
10

1  

10

0  

10

1  

10

0  

-10

0  

-10

1  

-10

2  

-10

3  

-10

0  

-10

1  

-10

2  

-10

3  

Collector Current, I

C

(mA)  
Collector-Base Voltage (V)  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 4  
QW-R206-031.H  

HE8550  
PNP SILICON TRANSISTOR  
TYPICAL CHARACTERISTICS  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
4 of 4  
QW-R206-031.H