UTC-Unisonic-Tech-MCR100L-8-AD-T92-B

Part #UTC-Unisonic-Tech-MCR100L-8-AD-T92-B
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UTC-Unisonic-Tech-MCR100L-8-AD-T92-B
UNISONIC TECHNOLOGIES CO., LTD  
MCR100  
SCR  
SENSITIVE GATE SILICON  
CONTROLLED RECTIFIERS  
REVERSE BLOCKING  
THYRISTORS  
3
2
1
1
SOT-223  
SOT-23  
DESCRIPTION  
PNPN devices designed for high volume, line-powered  
consumer applications such as relay and lamp drivers, small motor  
controls, gate drivers for larger thyristors, and sensing and  
detection circuits.  
1
1
FEATURES  
SOT-89  
TO-92  
* Sensitive gate allows triggering by micro controllers and other  
logic circuits  
* Blocking voltage to 600V  
* On-state current rating of 0.8A RMS at 80
C  
* High surge current capability – 10A  
* Minimum and maximum values of I

GT

, V

GT

and I

H

specified for  
ease of design  
* Immunity to dV/dt – 20V/
μ
sec minimum at 110
C  
* Glass-passivated surface for reliability and uniformity  
ORDERING INFORMATION  
Ordering Number  
Pin assignment  
Package  
Packing  
Lead Free  
Halogen Free  
1
K
G
K
K
K
K
G
K
K
K
K
G
K
K
K
2
A
A
G
G
G
A
A
G
G
G
A
A
G
G
G
3
G
K
A
A
A
G
K
A
A
A
G
K
A
A
A
MCR100L-4-x-AA3-R  
MCR100L-4-x-AB3-R  
MCR100L-4-x-AE3-R  
MCR100L-4-x-T92-B  
MCR100L-4-x-T92-K  
MCR100L-6-x-AA3-R  
MCR100L-6-x-AB3-R  
MCR100L-6-x-AE3-R  
MCR100L-6-x-T92-B  
MCR100L-6-x-T92-K  
MCR100L-8-x-AA3-R  
MCR100L-8-x-AB3-R  
MCR100L-8-x-AE3-R  
MCR100L-8-x-T92-B  
MCR100L-8-x-T92-K  
MCR100G-4-x-AA3-R  
MCR100G-4-x-AB3-R  
MCR100G-4-x-AE3-R  
MCR100G-4-x-T92-B  
MCR100G-4-x-T92-K  
MCR100G-6-x-AA3-R  
MCR100G-6-x-AB3-R  
MCR100G-6-x-AE3-R  
MCR100G-6-x-T92-B  
MCR100G-6-x-T92-K  
MCR100G-8-x-AA3-R  
MCR100G-8-x-AB3-R  
MCR100G-8-x-AE3-R  
MCR100G-8-x-T92-B  
MCR100G-8-x-T92-K  
SOT-223  
SOT-89  
SOT-23  
TO-92  
Tape Reel  
Tape Reel  
Tape Reel  
Tape Box  
Bulk  
TO-92  
SOT-223  
SOT-89  
SOT-23  
TO-92  
Tape Reel  
Tape Reel  
Tape Reel  
Tape Box  
Bulk  
TO-92  
SOT-223  
SOT-89  
SOT-23  
TO-92  
Tape Reel  
Tape Reel  
Tape Reel  
Tape Box  
Bulk  
TO-92  
Note: Pin
 
assignment: K: Cathode  
A: Anode  
G: Gate  
1 of 6  
Copyright © 2018 Unisonic Technologies Co., Ltd  
QW-R301-016.H  

MCR100  
SCR  
MARKING  
Package  
MCR100-4  
MCR100-6  
MCR100-8  
SOT-223  
SOT-89  
L: Lead Free  
G: Halogen Free  
L: Lead Free  
G: Halogen Free  
L: Lead Free  
G: Halogen Free  
R4  
R6  
R8  
SOT-23  
TO-92  
UTC  
UTC  
UTC  
L: Lead Free  
G: Halogen Free  
L: Lead Free  
G: Halogen Free  
L: Lead Free  
G: Halogen Free  
MCR100  
-4  
MCR100  
-6  
MCR100  
-8  
Date Code  
Date Code  
Date Code  
1
1
1
UNISONIC TECHNOLOGIES CO., LTD  
2 of 6  
QW-R301-016.H  

MCR100  
SCR  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
RATINGS  
200  
UNIT  
MCR100-4  
MCR100-6  
MCR100-8  
V
V
V
A
Peak Repetitive Off-State Voltage(Note 1)  
(T

J

=-40 ~ 110°
С
, Sine Wave, 50 ~ 60Hz;  
Gate Open)  
V

DRM

,V

RRM  

400  
600  
On-Sate RMS Current (Tc=80°
С
) 180°
С
Condition Angles  
Peak Non-Repetitive Surge Current  
(1/2 cycle, Sine Wave, 60Hz, T

J

=25°
С
)  
I

T(RMS)  

I

TSM  

0.8  
10  
A
Circuit Fusing Considerations (t=8.3 ms)  
I

2

t  
0.415  
0.1  
0.01  
1
A

2

s  
W
W
A
Forward Peak Gate Power (T

A

=25°
С
, Pulse Width
1.0µs)  
Forward Average Gate Power (T

A

=25°
С
, t=8.3ms)  
Peak Gate Current – Forward (T

A

=25°
С
, Pulse Width
1.0
μ
s)  
Peak Gate Voltage – Reverse (T

A

=25°
С
, Pulse Width
1.0
μ
s)  
Operating Junction Temperature Range  
P

GM  

P

G(AV)  

I

GM  

V

GRM  

5
V
T

J  

-40 ~ +110  
°
С  
(Rated V

RRM

and V

DRM  

)
Storage Temperature Range  
T

STG  

-40 ~ +150  
°
С  
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
THERMAL DATA  
PARAMETER  
SYMBOL  
MAX  
180  
400  
200  
UNIT  
°
С
/W  
°
С
/W  
°
С
/W  
SOT-223  
Junction to Ambient  
θ

JA  

SOT-23/SOT-89  
TO-92  
ELECTRICAL CHARACTERISTICS
(T

J

=25°
С
, unless otherwise stated)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN TYP MAX
 
UNIT  
OFF CHARACTERISTICS  
Peak Forward or Reverse Blocking
 
T

C

=25°
С  
V

D

=Rated V

DRM

and V

RRM  

R

GK

=1k
Ω  
;
10  
μ
A  
μ
A  
I

DRM

, I

RRM  

Current  
T

C

=110°
С  
100  
ON CHARACTERISTICS  
Peak Forward On-State Voltage (Note 2)  
V

TM  

I

GT  

I

TM

=1A Peak @ T

A

=25°
С  
1.7  
200  
5
V
Gate Trigger Current (Continuous DC) (Note3)  
V

AK

=7Vdc, R

L

=100
Ω
, T

C

=25°
С  
40  
μ
A  
mA  
mA  
mA  
mA  
V
T

C

=25°
С  
V

AK

=7Vdc, initiating  
0.5  
Holding Current  
I

H  

I

L  

current=20mA  
T

C

=-40°
С  
10  
10  
15  
T

C

=25°
С  
0.6  
Latch Current  
V

AK

=7V, Ig=200
A  
T

C

=-40°
С  
Gate Trigger Voltage  
(continuous dc)  
T

C

=25°
С  
T

C

=-40°
С  
0.62 0.8  
1.2  
V

GT  

V

AK

=7Vdc, R

L

=100
Ω  
V
DYNAMIC CHARACTERISTICS  
V

D

=Rated V

DRM

, Exponential  
Critical Rate of Rise of Off-State Voltage  
d

V

/dt Waveform,
 
R

GK

=1000
Ω
,  
T

J

=110°
С  
20  
35  
V/
μ
s  
I

PK

=20A; Pw=10
sec;  
Critical Rate of Rise of On-State Current  
di/dt  
50 A/
μ
s  
diG/dt=1A/
μ
sec, Igt=20mA  
Notes: 1. V

DRM

and V

RRM

for all types can be applied on a continuous basis. Ratings apply for zero or negative gate  
voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the  
anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of  
the devices are exceeded.  
2. Indicates Pulse Test Width
1.0ms, duty cycle
1%.  
3. Does not include RGK in measurement.  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 6  
QW-R301-016.H  

MCR100  
SCR  
VOLTAGE CURRENT CHARACTERISTIC OF SCR  
PARAMETER  
SYMBOL  
V

DRM  

I

DRM  

Peak Repetitive Off Stat Forward Voltage  
Peak Forward Blocking Current  
Peak Repetitive Off State Reverse Voltage  
Peak Reverse Blocking Current  
Peak On State Voltage  
V

RRM  

I

RRM  

V

TM  

Holding Current  
I

H  

+Current  
Anode+  
V

TM  

On State  
I

H  

I

RRM

at V

RRM  

+Voltage  
I

DRM

at V

DRM  

Reverse Blocking  
Region (off state)  
Forward Blocking  
Region (off state)  
Reverse Avalanche  
Region Anode-  
CLASSIFICATION OF I

GT  

RANK  
B
C
AA  
8~16
μ
A  
AB  
AC  
AD  
23~52
μ
A  
RANGE  
48~105
μ
A  
95~200
μ
A  
14~21
μ
A  
19~25
μ
A  
UNISONIC TECHNOLOGIES CO., LTD  
4 of 6  
QW-R301-016.H  

MCR100  
SCR  
TYPICAL CHARACTERISTICS  
Typical Gate Trigger Current vs.  
Junction Temperature  
Typical Gate Trigger Voltage vs.  
Junction Temperature  
100  
90  
1.0  
0.9  
0.8  
80  
70  
0.7  
0.6  
60  
50  
0.5  
40  
30  
20  
10  
0.4  
0.3  
0.2  
-4
0
–
2
5
–
10 5
 
20 35
 
50  
110  
-4
0
–
2
5
–
10 5
 
20 35
 
50  
110  
65 80 95  
65 80 95  
Junction Temperature, T

J

(
℃
)  
Junction Temperature, T

J

(
℃
)  
UNISONIC TECHNOLOGIES CO., LTD  
5 of 6  
QW-R301-016.H  

MCR100  
SCR  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other  
parameters) listed in products specifications of any and all UTC products described or contained herein.  
UTC products are not designed for use in life support appliances, devices or systems where malfunction  
of these products can be reasonably expected to result in personal injury. Reproduction in whole or in  
part is prohibited without the prior written consent of the copyright owner. UTC reserves the right to  
make changes to information published in this document, including without limitation specifications and  
product descriptions, at any time and without notice.
 
This document supersedes and replaces all  
information supplied prior to the publication hereof.  
UNISONIC TECHNOLOGIES CO., LTD  
6 of 6  
QW-R301-016.H