UTC-Unisonic-Tech-MJE13001G-C-AB3-F-R
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UNISONIC TECHNOLOGIES CO., LTD
MJE13001
NPN SILICON TRANSISTOR
NPN SILICON POWER
TRANSISTOR
FEATURES
* Collector-base voltage: V
(BR)CBO
=600V
* Collector current: I
C
=0.2A
ORDERING INFORMATION
Ordering Number
Pin Assignment
Packing
Package
Lead Free
–
Halogen Free
1
E
B
B
B
E
E
2
3
B
E
E
E
B
B
MJE13001G-x-AB3-A-R
MJE13001G-x-AB3-F-R
MJE13001G-x-T92-B
MJE13001G-x-T92-K
MJE13001G-x-T92-A-B
MJE13001G-x-T92-A-K
SOT-89
SOT-89
TO-92
TO-92
TO-92
TO-92
C
C
C
C
C
C
Tape Reel
Tape Reel
Tape Box
Bulk
–
MJE13001L-x-T92-B
MJE13001L-x-T92-K
MJE13001L-x-T92-A-B
MJE13001L-x-T92-A-K
Tape Box
Bulk
Note: Pin
Assignment: C: Collector
B: Base
E: Emitter
MARKING
SOT-89
TO-92
Copyright © 2015 Unisonic Technologies Co., Ltd
1 of 3
QW-R201-055.I
MJE13001
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector-Emitter Voltage
Collector-Base Voltage
Emitter Base Voltage
SYMBOL
V
CEO
V
CBO
V
EBO
I
C
RATINGS
400
UNIT
V
600
V
7
V
Collector Current
200
mA
SOT-89
Collector Power Dissipation
TO-92
550
P
C
mW
750
Junction Temperature
Storage Temperature
T
J
+150
-55 ~ +150
°C
°C
T
STG
Note: Absolute
maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(T
A
=25°C, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
SYMBOL
BV
CBO
TEST CONDITIONS
I
C
=100
μ
A, I
E
=0
I
C
=1mA, I
B
=0
MIN TYP MAX UNIT
V
600
400
7
BV
CEO
V
V
Emitter-Base Breakdown Voltage
Base-Emitter Voltage
BV
EBO
V
BE
I
CBO
I
E
=100
μ
A, I
C
=0
I
E
=100 mA
1.1
100
200
100
V
Collector Cutoff Cut-Off Current
V
CB
=600V, I
E
=0A
V
CE
=400V, I
B
=0
EB
=7V, I
C
=0A
μ
A
μ
A
μ
A
Collector Emitter Cut-Off Current
Emitter Cutoff Cut-Off Current
I
CEO
I
EBO
V
ON CHARACTERISTICS
h
FE1
*
V
CE
=20 V, I
C
=20mA
V
CE
=10V, I
C
=0.25mA
I
C
=50mA, I
B
=10mA
I
C
=50mA, I
B
=10mA
10
5
70
DC Current Gain
h
FE2
V
CE(SAT)
Collector-Emitter Saturation Voltage
0.5
1.2
V
V
Base-Emitter Saturation Voltage
SMALL-SIGNAL CHARACTERISTICS
Current Gain Bandwidth Product
V
BE(SAT)
f
T
I
C
=20mA,V
CE
=20V,f=1MHz
I
C
=50mA, I
B1
=-I
B2
=5mA,
8
MHz
Resistive Load
Storage Time
Fall Time
t
S
t
F
1.5
0.3
μ
s
μ
s
V
CC
=45V
CLASSIFICATION OF h
FE1
*
RANK
A
B
C
D
E
F
G
H
I
J
K
L
RANGE 10-15
15-20 20-25 25-30 30-35 35-40 40-45 45-50 50-55 55-60 60-65 65-70
UNISONIC TECHNOLOGIES CO., LTD
2 of 3
QW-R201-055.I
MJE13001
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
3 of 3
QW-R201-055.I
