UTC-Unisonic-Tech-MMBT9012G-I-AE3-R

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UTC-Unisonic-Tech-MMBT9012G-I-AE3-R
UNISONIC TECHNOLOGIES CO., LTD  
MMBT9012  
PNP SILICON TRANSISTOR  
1W OUTPUT AMPLIFIER OF  
POTABLE RADIOS IN CLASS  
B PUSH-PULL OPERATION  
3
FEATURES  
1
2
*High total power dissipation. (625mW)  
*High collector current. (-500mA)  
*Excellent hFE linearity  
SOT-23  
(JEDEC TO-236)  
*Complementary to UTC MMBT9013  
ORDERING INFORMATION  
Pin Assignment  
Packing  
Ordering Number  
Package  
SOT-23  
1
2
3
MMBT9012G-x-AE3-R  
E
B
C
Tape Reel  
Note: Pin
 
Assignment: E: Emitter  
B: Base  
C: Collector  
MARKING  
1 of 3  
Copyright © 2014 Unisonic Technologies Co., Ltd  
QW-R206-020.B  

MMBT9012  
PNP SILICON TRANSISTOR  
ABSOLUTE MAXIMUM RATINGS
(T

A

= 25°C, unless otherwise specified)  
PARAMETER  
SYMBOL  
V

CBO  

V

CEO  

V

EBO  

I

C  

RATING  
-40  
UNIT  
V
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
-20  
V
-5  
V
-500  
mA  
mW  
C  
C  
Collector dissipation  
Junction Temperature  
Storage Temperature  
P

C  

225  
T

J  

150  
T

STG  

-55 ~ +150  
ELECTRICAL CHARACTERISTICS
(T

A

= 25°C, unless otherwise specified)  
PARAMETER  
SYMBOL  
BV

CBO  

BV

CEO  

BV

EBO  

I

CBO  

TEST CONDITIONS  
I

C

= -100
μ
A, I

E

=0  
MIN TYP MAX
 
UNIT  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cutoff current  
-40  
-20  
-5  
V
V
I

C

= -1mA, I

B

=0  
I

E

= -100
μ
A, I

C

=0  
V
V

CB

= -25V, I

E

=0  
-100  
-100  
300  
nA  
nA  
Emitter cutoff current  
I

EBO  

V

EB

= -3V, I

C

=0  
h

FE1  

V

CE

= -1V, I

C

= -50mA  
V

CE

= -1V, I

C

= -500mA  
I

C

= -500mA, I

B

= -50mA  
I

C

= -500mA, I

B

= -50mA  
V

CE

=-1V, I

C

= -10mA  
64  
40  
120  
90  
DC Current Gain  
h

FE2  

Collector-emitter saturation voltage  
Base-emitter saturation voltage  
Base-emitter on voltage  
V

CE(sat)  

V

BE(sat)  

V

BE(on)  

-0.18 -0.6  
-0.95 -1.2  
V
V
V
-0.6 -0.67 -0.7  
CLASSIFICATION OF h

FE1  

RANK  
D
E
F
G
H
144-202  
I
RANGE  
64-91  
78-112  
96-135  
112-166  
190-300  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 3  
QW-R206-020.B  

MMBT9012  
PNP SILICON TRANSISTOR  
TYPICAL CHARACTERICS  
Static Characteristic  
Dc Current Gain  
1000  
-50  
-40  
I

B

=-250
μ
A  
I

B

=-200
μ
A  
500  
300  
I

B

=-150
μ
A  
-30  
-20  
V

CE

=-1V  
100  
I

B

=-100
μ
A  
I

B

=-50
μ
A  
50  
30  
-10  
0
10  
0
-10  
-20  
-30  
-40  
-50  
-500  
-1000  
1
-300  
-30 -50  
-100  
Collector Current, I

C

(mA)  
Collector – Emitter Voltage, V

CE

(V)  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 3  
QW-R206-020.B