UTC-Unisonic-Tech-MMBTA14G-AE3-R

Part #UTC-Unisonic-Tech-MMBTA14G-AE3-R
Download 
UTC-Unisonic-Tech-MMBTA14G-AE3-R
UNISONIC TECHNOLOGIES CO., LTD  
MMBTA14  
NPN SILICON TRANSISTOR  
DARLINGTON TRANSISTOR  
3
DESCRIPTION  
1
2
The UTC
MMBTA14
is a Darlington transistor.  
SOT-23  
(JEDEC TO-236)  
FEATURES  
* Collector-Emitter Voltage: V

CES

= 30V  
* Collector Dissipation: P

C(MAX)

= 350 mW  
3
1
2
SOT-323  
ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Packing  
Package  
Lead Free  
Halogen Free  
1
E
E
2
B
B
3
C
C
MMBTA14L-AE3-R  
MMBTA14L-AL3-R  
MMBTA14G-AE3-R  
MMBTA14G-AL3-R  
SOT-23  
Tape Reel  
Tape Reel  
SOT-323  
Note: Pin
 
Assignment: E: Emitter  
B: Base  
C: Collector  
MARKING  
Copyright © 2017 Unisonic Technologies Co., Ltd  
1 of 3  
QW-R206-038.E  

MMBTA14  
NPN SILICON TRANSISTOR  
ABSOLUTE MAXIMUM RATING
(
T

A

=25°
С
, unless otherwise specified)  
PARAMETER  
SYMBOL  
V

CBO  

V

CES  

V

EBO  

P

C  

RATINGS  
30  
UNIT  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Dissipation (T

C

=25
C)  
Collector Current  
30  
V
10  
V
350  
mW  
mA  
C  
C  
I

C  

500  
Junction Temperature  
Storage Temperature  
T

J  

+150  
-40 ~ +150  
T

STG  

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
ELECTRICAL CHARACTERISTICS
(
T

A

=25°
С
, unless otherwise specified)  
PARAMETER  
SYMBOL  
BV

CES  

I

CBO  

TEST CONDITIONS  
I

C

=100µA, I

B

=0  
MIN TYP
 
MAX UNIT  
Collector-Emitter Breakdown Voltage  
Collector CutOff Current  
30  
20000  
125  
V
V

CB

=30V, I

E

=0  
100  
100  
nA  
nA  
Emitter CutOff Current  
I

EBO  

V

EB

=10V, I

C

=0  
DC Current Gain  
h

FE  

V

CE

=5V, I

C

=100 mA (Note)  
Collector-Emitter Saturation Voltage  
Base-Emitter on Voltage  
V

CE(SAT)

I

C

=100mA, I

B

=0.1mA (Note)  
1.5  
2.0  
V
V
V

BE(ON)  

f

T  

V

CE

=5V, I

C

=100mA (Note)  
Current Gain Bandwidth Product  
V

CE

=5V, I

C

=10mA, f=100MHz  
MHz  
Note: Pulse
 
Width < 300µs, Duty Cycle
≤
2%  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 3  
QW-R206-038.E  

MMBTA14  
NPN SILICON TRANSISTOR  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 3  
QW-R206-038.E