UTC-Unisonic-Tech-MPSA92L-T92-B
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UNISONIC TECHNOLOGIES CO., LTD
MPSA92/93
PNP SILICON TRANSISTOR
HIGH VOLTAGE PNP
TRANSISTOR
1
1
TO-252
SOT-89
DESCRIPTION
The UTC
MPSA92/93
are high voltage PNP transistors,
designed for telephone signal switching and for high voltage
amplifier.
1
1
TO-92
TO-92NL
FEATURES
* High Collector-Emitter voltage:
V
CEO
=-300V (UTC
MPSA92
)
V
CEO
=-200V (UTC
MPSA93
)
1
* Collector Dissipation:
P
C
(max.)=625mW
TO-126
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
1
2
C
C
C
B
B
C
C
C
C
B
B
3
E
E
B
C
C
B
B
E
E
C
C
MPSA92L-AB3-R
MPSA92L-TN3-R
MPSA92L-T60-K
MPSA92L-T92-B
MPSA92L-T92-K
MPSA92L-T9N-B
MPSA92L-T9N-K
MPSA93L-AB3-R
MPSA93L-TN3-R
MPSA93L-T92-B
MPSA93L-T92-K
MPSA92G-AB3-R
MPSA92G-TN3-R
MPSA92G-T60-K
MPSA92G-T92-B
MPSA92G-T92-K
MPSA92G-T9N-B
MPSA92G-T9N-K
MPSA93G-AB3-R
MPSA93G-TN3-R
MPSA93G-T92-B
MPSA93G-T92-K
SOT-89
TO-252
TO-126
TO-92
B
B
E
E
E
E
E
B
B
E
E
Tape Reel
Tape Reel
Bulk
Tape Box
Bulk
TO-92
Tape Box
Bulk
TO-92NL
TO-92NL
SOT-89
TO-252
TO-92
Tape Reel
Tape Reel
Tape Box
Bulk
TO-92
Note: Pin
Assignment: B: Base
C: Collector
E: Emitter
1 of 5
Copyright © 2019 Unisonic Technologies Co., Ltd
QW-R201-019.L
MPSA92/93
PNP SILICON TRANSISTOR
MARKING
Package
MPSA92
MPSA93
SOT-89
TO-252
TO-126
–
TO-92
TO-92NL
–
UNISONIC TECHNOLOGIES CO., LTD
2 of 5
QW-R201-019.L
MPSA92/93
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING
(T
A
=25°
С
unless otherwise specified)
PARAMETER
SYMBOL
V
CBO
RATINGS
-300
-200
-300
-200
-5
UNIT
V
MPSA92
MPSA93
MPSA92
MPSA93
Collector-Base Voltage
Collector-Emitter Voltage
V
V
V
CEO
V
Emitter-Base Voltage
Base Current
V
EBO
I
B
V
mA
-100
Collector Current
I
C
-500
0.5
mA
W
SOT-89
TO-252
1.1
W
Collector Dissipation
P
C
TO-126
1
W
TO-92/TO-92NL
0.62
150
W
Junction Temperature
Storage Temperature
T
J
°
С
°
С
T
STG
-55~ +150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL CHARACTERISTICS
PARAMETER
SOT-89
SYMBOL
RATINGS
250
UNIT
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
TO-252
110
Junction to Ambient
Junction to Case
θ
JA
TO-126
125
TO-92/TO-92NL
SOT-89
200
43
TO-252
8.3
θ
JC
TO-126
12.5
83.3
TO-92/TO-92NL
ELECTRICAL CHARACTERISTICS
(T
A
=25°
С
, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX
UNIT
OFF CHARACTERISTICS
Collector-Base Breakdown
Voltage
MPSA92
MPSA93
MPSA92
MPSA93
-300
-200
-300
-200
-5
V
BV
CBO
I
C
=-100µA, I
E
=0
V
Collector-Emitter Breakdown
Voltage
V
V
BV
CEO
BV
EBO
I
CBO
I
C
=-1mA, I
B
=0
I
E
=-100µA, I
C
=0
V
CB
=-200V, I
E
=0
V
EB
=-3V, I
C
=0
Emitter-Base Breakdown Voltage
V
MPSA92
MPSA93
-0.25 µA
-0.25 µA
-0.10 µA
Collector Cut-Off Current
Emitter Cut-Off Current
I
EBO
ON CHARACTERISTICS
60
80
80
V
CE
=-10V, I
C
=-1mA
DC Current Gain(note)
h
FE
V
CE
=-10V, I
C
=-10mA
CE
=-10V, I
C
=-30mA
V
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Current Gain Bandwidth Product
V
CE(SAT)
I
C
=-20mA, I
B
=-2mA
V
BE(SAT)
I
C
=-20mA, I
B
=-2mA
-0.5
V
V
-0.90
f
T
V
CE
=-20V, I
C
=-10mA, f=100MHz
50
V
CB
=-20V, I
E
=0, f=1MHz
MHz
pF
MPSA92
MPSA93
6
8
Output Capacitance
C
ob
pF
Note: Pulse test: P
W
<
300µs, Duty Cycle
<
2%, V
CE(SAT)
<
200mV
UNISONIC TECHNOLOGIES CO., LTD
3 of 5
QW-R201-019.L
MPSA92/93
PNP SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
Capacitance
Saturation Voltage
10
2
-10
4
I
C
=10×I
B
V
CE(SAT)
C
IB
-10
3
V
BE(SAT)
10
1
C
CB
-10
2
-10
1
-10
-1
-10
0
-10
1
-10
2
-10
0
-10
1
-10
2
-10
3
-10
4
Collector-Base Voltage, BV
CBO
(V)
Collector Current, I
C
(mA)
Current Gain Bandwidth Product
Active-Region Safe Operating Area
T
J
=25°
С
-10
0
10
3
TO-92
V
CE
=-20V
f=100MHz
DC
-10
-1
2ms
10
2
-10
-2
-10
-3
10
1
-10
0
-10
0
-10
1
-10
2
-10
3
-10
1
Collector Current, I
C
(mA)
-10
2
Collector-Emitter Voltage, B
VCEO
(V)
Collector Current vs. Collector-Emitter
Voltage
DC Current Gain vs. Collector Current
V
CE
=-10V
80
60
40
I
B
=-2mA
I
B
=-1mA
I
B
=-800
μ
A
I
B
=-500
μ
A
125°C
10
2
I
B
=-300
μ
A
-40°C
25°C
MPSA92
20
0
10
1
10
0
I
B
=-100
μ
A
I
B
=-50
μ
A
10
0
2
4
8
6
-10
0
-10
1
Collector Current, -I
C
(mA)
-10
2
Collector-Emitter Voltage, -V
CE
(V)
UNISONIC TECHNOLOGIES CO., LTD
4 of 5
QW-R201-019.L
MPSA92/93
PNP SILICON TRANSISTOR
TYPICAL CHARACTERISTICS (Cont.)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all UTC products described or contained herein.
UTC products are not designed for use in life support appliances, devices or systems where malfunction
of these products can be reasonably expected to result in personal injury. Reproduction in whole or in
part is prohibited without the prior written consent of the copyright owner. UTC reserves the right to
make changes to information published in this document, including without limitation specifications and
product descriptions, at any time and without notice.
This document supersedes and replaces all
information supplied prior to the publication hereof.
UNISONIC TECHNOLOGIES CO., LTD
5 of 5
QW-R201-019.L
