UTC-Unisonic-Tech-PN2222AL
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UNISONIC TECHNOLOGIES CO., LTD
PN2222A
NPN SILICON TRANSISTOR
NPN GENERAL PURPOSE
AMPLIFIER
1
FEATURES
SOT-89
* This device is for use as a medium power amplifier and switch
requiring collector currents up to 500mA.
1
TO-92
ORDERING INFORMATION
Ordering Number
Pin Assignment
Packing
Package
Lead Free
Halogen Free
1
B
E
E
E
E
E
E
2
C
B
B
B
C
C
C
3
E
C
C
C
B
B
B
PN2222AL-AB3-R
PN2222AL-T92-R
PN2222AL-T92-B
PN2222AL-T92-K
PN2222AL-T92-A-R
PN2222AL-T92-A-B
PN2222AL-T92-A-K
PN2222AG-AB3-R
PN2222AG-T92-R
PN2222AG-T92-B
PN2222AG-T92-K
PN2222AG-T92-A-R
PN2222AG-T92-A-B
PN2222AG-T92-A-K
SOT-89
TO-92
TO-92
TO-92
TO-92
TO-92
TO-92
Tape Reel
Tape Reel
Tape Box
Bulk
Tape Reel
Tape Box
Bulk
PN2222AG-T92-A-R
(1)Packing Type
(2)Pin Assignment
(3)Package Type
(4)Green Package
(1) R: Tape Reel, B: Tape Box, K: Bulk
(2) refer to Pin Assignment
(3) AB3: SOT-89, T92: TO-92
(4) G: Halogen Free and Lead Free, L: Lead Free
MARKING
SOT-89
TO-92
UTC
PN2222
Date Code
L: Lead Free
G: Halogen Free
PN2222A
1
L: Lead Free
G: Halogen Free
A
Date Code
1
Copyright © 2020 Unisonic Technologies Co., Ltd
1 of 6
QW-R208-022.H
PN2222A
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING
(T
A
=25
°С
, unless otherwise specified)
PARAMETER
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
RATINGS
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
75
40
V
V
V
A
6
0.6
SOT-89
TO-92
1.2
Total Device Dissipation
P
C
W
0.6
Junction Temperature
Storage Temperature
T
J
+150
-55 ~ +150
°С
°С
T
STG
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL CHARACTERISTICS
(T
A
=25
°С
, unless otherwise noted)
PARAMETER
SYMBOL
RATINGS
104
UNIT
SOT-89
TO-92
Junction to Ambient
Junction to Case
θ
JA
°С
/W
200
SOT-89
TO-92
38
θ
JC
°С
/W
80
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2 of 6
QW-R208-022.H
PN2222A
NPN SILICON TRANSISTOR
ELECTRICAL CHARACTERISTICS
(T
A
=25
°С
, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
BV
CBO
I
C
=10
μ
A, I
E
=0
BV
CEO
I
C
=10mA, I
B
=0
BV
EBO
I
E
=10
μ
A, I
C
=0
75
40
6
V
V
V
I
CEO
I
CBO
I
EBO
I
BL
V
CE
=60V, V
EB(OFF)
=3.0V
10
0.01
10
nA
μ
A
nA
nA
Collector Cut-Off Current
V
CB
=60V, I
E
=0
Emitter Cut-Off Current
V
EB
=3.0V, I
C
=0
Base Cut-Off Current
V
CE
=60V, V
EB(OFF)
=3.0V
20
ON CHARACTERISTICS
I
C
=0.1mA, V
CE
=10V
35
50
I
C
=1.0mA, V
CE
=10V
I
C
=10mA, V
CE
=10V
75
DC Current Gain
h
FE
I
C
=150mA, V
CE
=10V (Note)
I
C
=150mA, V
CE
=1.0V (Note)
I
C
=500mA, V
CE
=10V (Note)
I
C
=150mA, I
B
=15mA
I
C
=500mA, I
B
=50mA
I
C
=150mA, I
B
=15mA
I
C
=500mA, I
B
=50mA
100
50
300
40
0.3
1.0
1.2
2.0
Collector-Emitter Saturation Voltage
(Note)
V
CE(SAT)
V
V
0.6
Base-Emitter Saturation Voltage (Note)
V
BE(SAT)
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
Output Capacitance
f
T
I
C
=20mA, V
CE
=20V, f=100MHz
300
MHz
pF
Cobo V
CB
=10V, I
E
=0, f=100kHz
Cibo V
EB
=0.5V, I
C
=0, f=100kHz
rb’Cc I
C
=20mA, V
CB
=20V, f=31.8MHz
8.0
25
Input Capacitance
pF
Collector Base Time Constant
150
pS
I
C
=100
A, V
CE
=10V, R
S
=1.0k
Ω
,
f=1.0kHz
Noise Figure
NF
4.0
60
dB
Real Part of Common-Emitter High
Frequency Input Impedance
SWITCHING CHARACTERISTICS
Delay time
Re(h
JE
) I
C
=20mA, V
CB
=20V, f=300MHz
Ω
t
D
t
R
t
S
t
F
V
CC
=30V, V
BE(OFF)
=0.5V
I
C
=150mA, I
B1
=15mA
V
CC
=30V, I
C
=150mA
I
B1
= I
B2
=15mA
10
25
ns
ns
ns
ns
Rise time
Storage time
225
60
Fall time
Note
:
Pulse test: Pulse Width
300
s, Duty Cycle
2.0%
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3 of 6
QW-R208-022.H
PN2222A
NPN SILICON TRANSISTOR
TEST CIRCUIT
30V
200
Ω
-15V
6.0V
1k
37
Ω
16V
30V
1.0K
Ω
1.0K
Ω
0
0
≤
220ns
≤
220ns
50
Ω
500
Ω
Saturated Turn-On Switching Time
Saturated Turn-Off Switching Time
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4 of 6
QW-R208-022.H
PN2222A
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
Collector-Emitter Saturation Voltage vs.
Collector Current
DC Current Gain
vs. Collector Current
V
CE
=5V
0.4
0.3
500
400
300
200
100
β
=10
125
°C
25
°C
125
°C
25
°C
0.2
0.1
-40
°C
-40
°C
0
0.1 0.3
1
10 30 100 300
1
10
100
500
Collector Current, I
C
(mA)
Collector Current, I
C
(mA)
Base-Emitter Saturation Voltage vs.
Collector Current
Base-Emitter on Voltage vs. Collector
Current
1
β
=10
V
CE
=5V
1
0.8
0.6
0.4
0.8
-40
°C
-40
°C
25
°C
25
°C
0.6
0.4
0.2
125
°C
125
°C
1
10
100
500
0.1
1
10
25
Collector Current, I
C
(mA)
Collector Current, I
C
(mA)
Emitter Transition and Output
Capacitance vs. Reverse Bias Voltage
Base-Emitter Saturation Voltage
vs. Collector Current
500
100
V
CB
=40V
20
16
10
1
12
8
C
te
C
ob
0.1
4
f=1MHz
25
50
75
100
125
150
0.1
1
10
100
Reverse Bias Voltage
(V)
Ambient Temperature, T
A
(
°C
)
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5 of 6
QW-R208-022.H
PN2222A
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS (Cont.)
Power Dissipation vs.
Ambient Temperature
Switching Times
vs. Collector Current
400
I
C
=
1.25
I
B1
=I
B2
10
SOT-89
320
240
V
CC
=25V
1
0.75
0.5
0.25
0
t
S
160
TO-92
t
R
t
F
80
0
t
D
10
100
Collector Current, I
C
(mA)
1000
75 100 125 150
50
Temperature (
℃
)
0
25
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all UTC products described or contained herei
n
.
UTC products are not designed for use in life support appliances, devices or systems where malfunction
of these products can be reasonably expected to result in personal injury. Reproduction in whole or in
part is prohibited without the prior written consent of the copyright owner. UTC reserves the right to
make changes to information published in this document, including without limitation specifications and
product descriptions, at any time and without notice.
This document supersedes and replaces all
information supplied prior to the publication hereo
f
.
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ECHNOLOGIE
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6 of 6
QW-R208-022.H
