UTC-Unisonic-Tech-PZTA42G
| Part # | UTC-Unisonic-Tech-PZTA42G |
Download  | UTC-Unisonic-Tech-PZTA42G |
UNISONIC TECHNOLOGIES CO., LTD
PZTA42/43
NPN SILICON TRANSISTOR
HIGH VOLTAGE TRANSISTOR
DESCRIPTION
The UTC
PZTA42/43
are high voltage transistors, designed for
telephone switch and high voltage switch.
FEATURES
1
* Collector-emitter voltage: V
CEO
=300V (UTC PZTA42)
V
CEO
=200V (UTC PZTA43)
SOT-223
* High current gain
* Complement to UTC PZTA92/93
* Collector power dissipation: P
C(MAX)
=1W
ORDERING INFORMATION
Ordering Number
Pin Assignment
Packing
Package
Lead Free
Halogen Free
1
B
B
2
C
C
3
E
E
PZTA42L-AA3-R
PZTA43L-AA3-R
PZTA42G-AA3-R
PZTA43G-AA3-R
C: Collector
SOT-223
SOT-223
Tape Reel
Tape Reel
Note: Pin
Assignment: B: Base
E: Emitter
PZTA42G-AA3-R
(1) R: Tape Reel
(2) AA3: SOT-223
(1)Packing Type
(2)Package Type
(3)Green Package
(3) G: Halogen Free and Lead Free, L: Lead Free
MARKING
PZTA42
L: Lead Free
PZTA43
L: Lead Free
PZTA43
PZTA42
G: Halogen Free
G: Halogen Free
Date Code
Date Code
1
1
Copyright © 2019 Unisonic Technologies Co., Ltd
1 of 3
QW-R207-005.F
PZTA42/43
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
V
CBO
RATINGS
UNIT
V
PZTA42
PZTA43
PZTA42
PZTA43
300
200
Collector-Base Voltage
Collector-Emitter Voltage
V
300
V
V
CEO
200
V
Emitter-Base Voltage
Collector Current
V
EBO
I
C
6
V
500
mA
W
°C
°C
Collector Power Dissipation
Junction Temperature
Storage Temperature
Pc
1
T
J
150
T
STG
-55 ~ +150
Note
:
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(T
A
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
300
200
300
200
6
TYP
MAX UNIT
PZTA42
PZTA43
PZTA42
PZTA43
V
V
V
V
V
Collector-Base Breakdown Voltage
BV
CBO
I
C
=100
μ
A, I
E
=0
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
BV
CEO
I
C
=1mA, I
B
=0
BV
EBO
I
E
=100
μ
A, I
C
=0
V
CB
=200V, I
E
=0
I
CBO
PZTA42
PZTA43
PZTA42
PZTA43
100
100
100
100
nA
nA
nA
nA
V
CB
=160V, I
E
=0
V
BE
=6V, I
C
=0
I
EBO
Emitter Cut-Off Current
DC Current Gain
V
BE
=4V, I
C
=0
V
CE
=10V, I
C
=1mA
80
80
80
h
FE
V
CE
=10V, I
C
=10mA
V
CE
=10V, I
C
30mA
300
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
V
CE(SAT)
I
C
=20mA, I
B
=2mA
V
BE(SAT)
I
C
=20mA, I
B
=2mA
0.2
V
V
0.90
f
T
V
CE
=20V, I
C
=10mA, f=100MHz
50
MHz
pF
pF
PZTA42
V
CB
=20V, I
E
=0, f=1MHz
PZTA43
3
4
Collector Base Capacitance
C
CB
UNISONI
C
T
ECHNOLOGIE
S
C
O.
,
L
TD
2 of 3
QW-R207-005.F
PZTA42/43
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
DC Current Gain
Saturation Voltage
10
1
10
3
10
2
Ic=10*I
B
V
CE
=10V
V
BE(SAT)
10
0
10
-1
10
1
10
0
V
CE(SAT)
10
-2
10
-1
10
0
10
2
10
0
10
1
10
2
10
3
10
1
Collector Current, Ic (mA)
Collector Current, Ic (mA)
Current Gain Bandwidth Product
V
CE
=20V
Capacitance
10
2
10
3
I
E
=0
f=1MHz
10
1
10
2
10
1
10
0
10
-1
10
0
10
1
10
2
10
1
10
2
Collector Current, Ic (mA)
Collector-Base Voltage (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all UTC products described or contained herei
n
.
UTC products are not designed for use in life support appliances, devices or systems where malfunction
of these products can be reasonably expected to result in personal injury. Reproduction in whole or in
part is prohibited without the prior written consent of the copyright owner. UTC reserves the right to
make changes to information published in this document, including without limitation specifications and
product descriptions, at any time and without notice.
This document supersedes and replaces all
information supplied prior to the publication hereo
f
.
UNISONI
C
T
ECHNOLOGIE
S
C
O.
,
L
TD
3 of 3
QW-R207-005.F
