UTC-Unisonic-Tech-UF630L-TA3-T
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UNISONIC TECHNOLOGIES CO., LTD
UF630
Power MOSFET
200V, 9A
N-CHANNEL
POWER MOSFET
1
1
TO-220
TO-220F
DESCRIPTION
The N-Channel enhancement mode silicon gate power
MOSFET is designed for high voltage, high speed power
switching applications such as switching regulators, switching
converters, solenoid, motor drivers, relay drivers.
1
1
TO-220F1
TO-220F2
FEATURES
* R
DS(ON)
< 0.4
Ω
@
V
GS
= 10V, I
D
= 5A
* Ultra Low Gate Charge ( typical 19 nC )
* Low Reverse Transfer Capacitance ( C
RSS
= typical 80 pF )
* Fast Switching Capability
1
1
TO-262
TO-251
* Avalanche Energy Specified
* Improved dv/dt Capability
1
SYMBOL
TO-252
SOP-8
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
UF630L-TA3-T
UF630L-TF1-T
UF630L-TF2-T
UF630L-TF3-T
UF630L-TM3-T
UF630L-TN3-R
UF630L-T2Q-T
–
Halogen Free
1
2
3
S
S
S
S
S
S
S
S
4
–
5
–
6
–
7
–
8
–
–
–
–
–
–
–
UF630G-TA3-T
UF630G-TF1-T
UF630G-TF2-T
UF630G-TF3-T
UF630G-TM3-T
UF630G-TN3-R
UF630G-T2Q-T
UF630G-S08-R
TO-220
TO-220F1
TO-220F2
TO-220F
TO-251
Tube
Tube
G
G
G
G
G
G
G
S
D
D
D
D
D
D
D
S
–
–
–
–
Tube
–
–
–
–
Tube
–
–
–
–
Tube
–
–
–
–
TO-252
Tape Reel
Tube
–
–
–
–
TO-262
–
–
–
–
SOP-8
G
D
D
D
D Tape
Reel
Note: Pin
Assignment: G: Gate
D: Drain
S: Source
1 of 8
Copyright © 2015 Unisonic Technologies Co., Ltd
QW-R502-049.J
UF630
Power MOSFET
MARKING
TO-220 / TO-220F / TO-220F1
TO-220F2 / TO-252 / TO-262
SOP-8
UNISONIC TECHNOLOGIES CO., LTD
2 of 8
QW-R502-049.J
UF630
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C, unless otherwise specified)
PARAMETER
SYMBOL
V
DSS
V
DGR
V
GSS
I
D
RATINGS
UNIT
V
Drain-Source Voltage
200
Drain-Gate Voltage (R
GS
= 20k
Ω
, T
J
=25°C ~125°C)
Gate-Source Voltage
200
V
±20
V
Continuous Drain Current
9
A
Pulsed Drain Current (Note 2)
Single Pulse Avalanche Energy (Note 3)
TO-220/TO-262
I
DM
36
A
E
AS
150
mJ
73
TO-220F1/ TO-220F
38
Power Dissipation
P
D
W
TO-220F2
TO-251/ TO-252
SOP-8
42
46
5
Junction Temperature
Storage Temperature
T
J
+150
-55 ~ +150
°C
°C
T
STG
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by T
J.
3. L = 4mH, I
AS
= 8.3A, V
DD
= 20V, R
G
= 25
Ω
, Starting T
J
= 25°C
THERMAL DATA
PARAMETER
TO-220/TO-262
SYMBOL
RATING
62.5
UNIT
°C/W
TO-220F1/ TO-220F
TO-220F2
Junction to Ambient
Junction to Case
θ
JA
TO-251/ TO-252
SOP-8
100.3
83
TO-220/TO-262
TO-220F1/ TO-220F
TO-220F2
1.71
3.31
2.98
2.7
θ
JC
°C/W
TO-251/ TO-252
SOP-8
24
UNISONIC TECHNOLOGIES CO., LTD
3 of 8
QW-R502-049.J
UF630
Power MOSFET
ELECTRICAL SPECIFICATIONS
(T
C
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX
UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
I
D(ON)
I
DSS
V
GS
= 0V, I
D
= 250
μ
A
200
9
V
A
V
DS
> I
D(ON)
x R
DS(ON)MAX
,
On-State Drain Current (Note 1)
Drain-Source Leakage Current
Gate-Source Leakage Current
V
GS
= 10V
V
DS
= Rated BV
DSS
, V
GS
= 0V
V
GS
= 20V, V
DS
= 0V
10
μ
A
Forward
Reverse
100 nA
-100 nA
I
GSS
V
GS
= -20V, V
DS
= 0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
R
DS(ON)
V
GS
= V
DS
, I
D
= 250
μ
A
2
4
V
Static Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
V
GS
= 10V, I
D
= 5A
0.25 0.4
Ω
C
ISS
C
OSS
C
RSS
600
250
80
pF
pF
pF
V
DS
= 25V, V
GS
= 0V,
Output Capacitance
f = 1.0MHz
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(ON)
t
R
t
D(OFF)
t
F
30
50
50
40
ns
ns
V
V
DD
= 90V, I
D
≈
9A, R
GS
= 9.1
Ω
,
GS
= 10V, R
L
= 9.6
Ω
Turn-On Rise Time
Turn-Off Delay Time
ns
(Note 1, 2)
Turn-Off Fall Time
ns
Total Gate Charge
Q
G
19
10
9
30
nC
nC
nC
V
GS
= 10V, I
D
= 9A,
V
DS
= 0.8 x Rated BV
DSS
Gate-Source Charge
Q
GS
Q
GD
I
G(REF)
= 1.5mA
Gate-Drain Charge
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
Maximum Continuous Drain-Source Diode
Forward Current
V
SD
V
GS
=0V, I
S
= 9.0A
2
9
V
A
I
S
Maximum Pulsed Drain-Source Diode
Forward Current
I
SM
36
A
Reverse Recovery Time
t
rr
I
S
= 9.0A, dI
S
/dt = 100A/
μ
s
(Note 1)
450
3
ns
Reverse Recovery Charge
Q
RR
μ
C
Notes: 1. Pulse Test: Pulse width
≤
300
μ
s, Duty cycle
≤
2%.
Notes:
2. Essentially independent of operating temperature.
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-049.J
UF630
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
V
DS
BV
DSS
L
V
DS
R
G
I
AS
V
DD
V
DD
D.U.T.
0
0.01
Ω
t
AV
t
p
I
AS
Fig1. Unclamped Energy Test Circuit
Fig.2 Unclamped Energy Waveforms
V
DS
90%
R
L
10%
0
R
G
90%
V
DD
V
GS
50%
50%
PULSE WIDTH
D.U.T.
V
GS
10%
0
t
R
t
D(ON)
t
ON
t
D(OFF)
t
F
t
OFF
Fig.4 Resistive Switching Waveforms
Fig.3 Switching Time Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-049.J
UF630
Power MOSFET
TYPICAL CHARACTERISTICS
Forward Bias Safe Operating Area
Normalized Transient Thermal Impedance
100
10
1.0
0.1
0.5
10
μ
s
100
μ
s
0.2
0.1
P
DM
1ms
t1
t2
0.05
0.02
0.01
Operation in This Area
May be Limited by R
DS (ON)
10ms
100ms
DC
1
Single pulse
Duty Factor, D=t1/t2
Peak T
J
=P
DM
×Z
θ
JC
R
θ
JC
+T
C
T
C
=25
℃
T
J
=Max Rated
0.1
0.01
10
-5
10
-4
10
-3
10
-2
10
-1
1
10
1
10
100
1000
Rectangular Pulse Duration, t
1
(s)
Drain to Source Voltage, V
DS
(V)
UNI
O
NI
T
ECHNOLOGIE
C
O., LTD
6 of 8
QW-R502-049.J
UF630
Power MOSFET
TYPICAL CHARACTERISTICS (Cont.)
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-049.J
UF630
Power MOSFET
TYPICAL CHARACTERISTICS (Cont.)
Capacitance vs. Drain to Source Voltage
Drain Current vs. Source to Drain Voltage
2000
1600
40
35
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD,
C
DS
C
RSS
= C
GD
C
OSS
= C
DS
+ C
GD
30
25
1200
800
20
15
10
C
ISS
400
0
5
0
C
OSS
C
RSS
1
1
1.5
2
2.5
3
0.5
50
1
20
30
40
10
Source to Drain Voltage, V
SD
(V)
Drain to Source Voltage, V
DS
(V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-049.J
