UTC-Unisonic-Tech-UF640G-TN3-R
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UNISONIC TECHNOLOGIES CO., LTD
UF640
Power MOSFET
18A, 200V, 0.18OHM,
N-CHANNEL POWER MOSFET
DESCRIPTION
These kinds of n-channel power MOSFET field effect transistor
have low conduction power loss, high input impedance, and high
switching speed, Linear Transfer Characteristics, so can be use in
a variety of power conversion applications.
The
UF640
suitable for resonant and PWM converter
topologies.
FEATURES
* R
DS(ON)
< 0.18
Ω
@ V
GS
=10V, I
D
=10A
* Ultra Low gate charge (typical 43nC)
* Low reverse transfer capacitance (C
RSS
= typical 100 pF)
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
1 of 6
Copyright © 2015 Unisonic Technologies Co., Ltd
QW-R502-066.I
UF640
Power MOSFET
ORDERING INFORMATION
Ordering Number
Halogen-Free
Pin Assignment
Package
Packing
Lead Free
–
1
2
3
S
S
S
S
S
S
S
S
S
S
UF640G-AA3-R
UF640G-TA3-T
UF640G-TF1-T
UF640G-TF2-T
UF640G-TF3-T
UF640G-TN3-R
UF640G-T2Q-T
UF640G-T2Q-R
UF640G-TQ2-T
UF640G-TQ2-R
SOT-223
TO-220
Tape Reel
Tube
G
G
G
G
G
G
G
G
G
G
D
D
D
D
D
D
D
D
D
D
UF640L-TA3-T
UF640L-TF1-T
UF640L-TF2-T
UF640L-TF3-T
UF640L-TN3-R
UF640L-T2Q-T
UF640L-T2Q-R
UF640L-TQ2-T
UF640L-TQ2-R
TO-220F1
TO-220F2
TO-220F
TO-252
Tube
Tube
Tube
Tape Reel
Tube
TO-262
TO-262
Tape Reel
Tube
TO-263
TO-263
Tape Reel
Note: Pin
Assignment: G: Gate
D: Drain
S: Source
MARKING
TO-220 / TO-220F / TO-220F1
TO-220F2 / TO-252 / TO-262 / TO-263
SOT-223
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-066.I
UF640
Power MOSFET
ABSOLUTE MAXIMUM RATING
(T
C
= 25°C, unless otherwise specified)
PARAMETER
SYMBOL
V
DSS
V
DGR
V
GSS
I
D
RATINGS
200
UNIT
V
Drain-Source Voltage
Drain-Gate Voltage (R
GS
=20k
Ω
)
Gate-Source Voltage
200
V
±20
V
Continuous Drain Current
Pulsed Drain Current (Note 2)
Single Pulse Avalanche Energy Rating (Note 2)
SOT-223
18
A
I
DM
72
A
E
AS
242
mJ
66
TO-220
123
Maximum Power
Dissipation
TO-220F
40
P
D
W
TO-220F1/TO-220F2
TO-252
42
83
TO-262/TO-263
139
Junction Temperature
Storage Temperature
T
J
+150
-55 ~ +150
°C
°C
T
STG
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. L=3.37mH, V
DD
=50V, R
G
=25
Ω
, peak I
AS
=12A, starting T
J
=25°C
3. Pulse width limited by T
J(MAX)
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
57
UNIT
°C/W
SOT-223
TO-220/TO-220F
TO-220F1/TO-220F2
TO-262/TO-263
TO-252
Junction to Ambient
θ
JA
62.5
110
1.8
SOT-223
TO-220
1.01
3.1
2.9
TO-220F
Junction to Case
θ
JC
°C/W
TO-220F1/TO-220F2
TO-252
1.5
0.9
TO-262/TO-263
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-066.I
UF640
Power MOSFET
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX
UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Drain-Source On Resistance
DYNAMIC PARAMETERS
Input Capacitance
BV
DSS
I
D
=250
μ
A, V
GS
=0V
I
DSS
V
DS
= Rated BV
DSS
, V
GS
= 0V
I
GSS
V
GS
= ±20V
200
2
V
25
μ
A
nA
±100
V
GS(THR)
V
GS
=V
DS
, I
D
=250
μ
A
4
V
R
DS(ON)
V
GS
=10V, I
D
=10A
0.14 0.18
Ω
C
ISS
805
240
46
pF
pF
pF
V
DS
=25V, V
GS
=0V, f=1MHz
Output Capacitance
C
OSS
C
RSS
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Turn-ON Delay Time
t
D(ON)
t
R
t
D(OFF)
t
F
40
58
127
86
89
9
52
72
ns
ns
ns
ns
nC
nC
V
DD
=100V,I
D
≈
18A, R
G
=9.1
Ω
,R
L
=5.4
Ω
,
MOSFET Switching Times are
Essentially Independent of Operating
Temperature
Turn-ON Rise Time
Turn-OFF Delay Time
152
104
110
Turn-OFF Fall-Time
Total Gate Charge
Q
G(TOT)
V
GS
=10V, I
D
≈
18A, V
DS
=0.8 x Rated
BV
DSS
Gate Charge is Essentially
Independent of Operating
Temperature I
G(REF)
= 1.5mA
Gate Source Charge
Q
GS
Gate Drain Charge
Q
GD
24
nC
SOURCE TO DRAIN DIODE SPECIFICATIONS
Diode Forward Voltage (Note)
Continuous Source Current
(body diode)
V
SD
T
J
=25°C, I
S
=18A, V
GS
=0V,
2.0
18
V
A
Integral Reverse p-n Junction
Diode in the MOSFET
Drain
I
S
Pulse Source Current (body diode)
(Note)
I
SM
72
A
Gate
Sourse
Reverse Recovery Time
Reverse Recovery Charge
t
rr
T
J
=25°C, I
S
=18A, dI
S
/dt=100A/
μ
s
T
J
=25°C, I
S
=18A, dI
S
/dt=100A/
μ
s
120
1.3
240
2.8
530
5.6
ns
Q
RR
μ
C
Note: Pulse Test: Pulse width
≤
300
μ
s, duty cycle
≤
2%.
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-066.I
UF640
Power MOSFET
TEST CIRCUIT
V
DS
90%
R
L
10%
0
R
G
90%
50%
V
DD
V
GS
50%
PULSE WIDTH
D.U.T.
V
GS
10%
0
t
R
t
D(ON)
t
ON
t
D(OFF)
t
F
t
OFF
Fig.4 Resistive Switching Waveforms
Fig.3 Switching Time Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-066.I
UF640
Power MOSFET
TYPICAL CHARACTERISTICS
Drain to Source On Resistance vs. Gate
Saturation Characteristics
Voltage And Drain Current
30
24
18
1.5
1.2
0.8
Pulse Duration = 80µs
Duty Cycle = 0.5% MAX
Pulse Duration = 80µs
Duty Cycle = 0.5% Max
V
GS
=6V
12
6
0.6
0.3
0
V
GS
=10V
0
0
1.0
2.0
3.0
4.0
5.0
0
15
30
45
60
75
Drain to Source Voltage, V
DS
(V)
Drain Current, I
D
(A)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-066.I
