UTC-Unisonic-Tech-UF830L-TN3-R
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UNISONIC TECHNOLOGIES CO., LTD
UF830
Power MOSFET
4.5A, 500V, 1.5
Ω
, N-CHANNEL
POWER MOSFET
DESCRIPTION
The N-Channel enhancement mode silicon gate power
MOSFET is designed for high voltage, high speed power
switching applications such as switching regulators, switching
converters, solenoid, motor drivers, relay drivers.
FEATURES
* R
DS(ON)
<1.5
Ω
@ V
GS
=10V
* Single Pulse Avalanche Energy Rated
* Rugged- SOA is Power Dissipation Limited
* Fast Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
SYMBOL
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
1
2
3
S
S
S
S
S
S
S
S
S
S
UF830L-TA3-T
UF830L-TF3-T
UF830L-TF1-T
UF830L-TF2-T
UF830L-TM3-T
UF830L-TMS-T
UF830L-TN3-R
UF830L-T2Q-T
UF830L-TQ2-R
UF830L-TQ2-T
UF830G-TA3-T
UF830G-TF3-T
UF830G-TF1-T
UF830G-TF2-T
UF830G-TM3-T
UF830G-TMS-T
UF830G-TN3-R
UF830G-T2Q-T
UF830G-TQ2-R
UF830G-TQ2-T
TO-220
TO-220F
TO-220F1
TO-220F2
TO-251
G
G
G
G
G
G
G
G
G
G
D
D
D
D
D
D
D
D
D
D
Tube
Tube
Tube
Tube
Tube
TO-251S
TO-252
Tube
Tape Reel
Tube
TO-262
TO-263
Tape Reel
Tube
TO-263
Note: Pin
Assignment: G: Gate
D: Drain
S: Source
1 of 9
Copyright © 2015 Unisonic Technologies Co., Ltd
QW-R502-046.I
UF830
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(
T
A
= 25°C, Unless Otherwise Specified.)
PARAMETER
SYMBOL
V
DS
RATINGS
500
500
±30
4.5
UNIT
V
Drain to Source Voltage (T
J
=25°C ~125°C)
Drain to Gate Voltage (R
GS
=20k
Ω
, T
J
=25°C ~125°C)
Gate to Source Voltage
V
DGR
V
GS
V
V
Continuous
I
D
A
Drain Current
Pulsed
I
DM
18
A
TO-220/TO-262/TO-263
73
W
W
TO-220F/ TO-220F1
Power Dissipation
38
P
D
TO-220F2
40
(T
C
= 25°C)
TO-251/TO-251S
TO-252
46
W
Single Pulse Avalanche Energy Rating (Note 2)
Junction Temperature
E
AS
T
J
300
+150
mJ
°C
°C
Storage Temperature
T
STG
-55 ~ +150
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. V
DD
=50V, starting T
J
=25°C, L=25mH, R
G
=25
Ω
, peak I
AS
=4.5A
THERMAL DATA
PARAMETER
TO-220/TO-262/TO-263
SYMBOL
RATINGS
62.5
UNIT
°C/W
°C/W
TO-220F/ TO-220F1
TO-220F2
62.5
Junction to Ambient
θ
JA
62.5
TO-251/TO-251S
TO-252
100.3
°C/W
TO-220/TO-262/TO-263
TO-220F/ TO-220F1
TO-220F2
1.71
3.31
°C/W
°C/W
Junction to Case
θ
Jc
3.125
TO-251/TO-251S
TO-252
2.7
°C/W
ELECTRICAL SPECIFICATIONS
(T
A
=25°C, unless otherwise specified.)
PARAMETER
SYMBOL
BV
DSS
TEST CONDITIONS
I
D
=250
μ
A, V
GS
=0V
V
GS
=V
DS
, I
D
=250
μ
A
MIN TYP MAX
UNIT
Drain-Source Breakdown Voltage
Gate Threshold Voltage
500
2.0
V
V
V
GS(TH)
I
D(ON)
4.0
On-State Drain Current (Note 1)
V
DS
>I
D(ON)
×R
DS(ON)MAX
, V
GS
=10V 4.5
V
DS
= Rated BV
DSS
, V
GS
=0V
V
DS
=0.8×Rated BV
DSS
A
25
μ
A
Drain-Source Leakage Current
I
DSS
250
μ
A
V
GS
=0V, T
J
= 125°C
Gate-Source Leakage Current
Static Drain-Source On-State Resistance
Forward Transconductance (Note 1)
Turn-On Delay Time
I
GSS
R
DS(ON)
g
FS
V
GS
=±30V
±100 nA
I
D
=2.5A, V
GS
=10V (Note 2)
V
DS
≥
10V, I
D
=2.7A
1.3
4.2
10
15
33
16
1.5
Ω
S
2.5
t
D(ON)
t
R
t
D(OFF)
t
F
17
23
53
23
ns
ns
ns
ns
Turn-On Rise Time
V
DD
=250V, I
D
≈
4.5A
R
GS
=12
Ω
, R
L
=54
Ω
(Note 2)
Turn-Off Delay Time
Turn-Off Fall Time
Notes: 1. Pulse Test: Pulse width
≤
300
μ
s, Duty Cycle
≤
2%.
2. MOSFET Switching Times are Essentially Independent of Operating Temperature.
3. Gate Charge is Essentially Independent of Operating Temperature.
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-046.I
UF830
Power MOSFET
ELECTRICAL SPECIFICATIONS(Cont.)
(T
A
=25°C, unless otherwise specified.)
PARAMETER
SYMBOL
Q
G
TEST CONDITIONS
V
GS
=10V, I
D
=4.5A
DS
=0.8×Rated BV
DSS
G(REF)
=1.5mA (Note 3)
MIN TYP MAX
UNIT
Total Gate Charge
22
3.5
11
32
nC
nC
nC
pF
pF
pF
V
I
Gate-Source Charge
Gate-Drain Charge
Q
GS
Q
GD
Input Capacitance
C
ISS
600
100
20
V
DS
=25V, V
GS
=0V, f=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
C
OSS
C
RSS
Notes: 1. Pulse Test: Pulse width
≤
300
μ
s, Duty Cycle
≤
2%.
2. MOSFET Switching Times are Essentially Independent of Operating Temperature.
3. Gate Charge is Essentially Independent of Operating Temperature.
INTERNAL PACKAGE INDUCTANCE
PARAMETER
SYMBOL
MIN TYP MAX
UNIT
Internal Drain Inductance
Measured from the contact screw on tab to center of die
Measured from the drain lead(6mm from package) to center of die
Internal Source Inductance
3.5
4.5
nH
nH
L
D
Measured from the source lead(6mm from header) to source bond pad
L
S
7.5
nH
Remark: Modified MOSFET symbol showing the internal devices inductances as below.
SOURCE TO DRAIN DIODE SPECIFICATIONS
PARAMETER
SYMBOL
V
SD
TEST CONDITIONS
MIN TYP MAX
UNIT
Source to Drain Diode Voltage
Continuous Source to Drain Current
Pulse Source to Drain Current
Reverse Recovery Time
T
J
=25°C,I
SD
=4.5A, V
GS
=0V(Note 1)
1.6
5.5
18
V
A
I
SD
Note 2
I
SDM
t
rr
A
T
J
=25°C, I
SD
=4.5A, dI/dt=100A/
μ
s
T
J
=25°C, I
SD
=4.5A, dI/dt=100A/
μ
s
180
350
2.2
760
4.3
ns
μ
C
Reverse Recovery Charge
Q
RR
0.96
Notes: 1. Pulse Test: Pulse width
≤
300
μ
s, Duty Cycle
≤
2%.
2. Modified MOSFET symbol showing the integral reverse P-N junction diode as below.
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-046.I
UF830
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
V
DS
L
Vary t
P
to Obtain
Required Peak I
AS
+
–
R
G
V
DD
V
GS
DUT
t
p
0V
I
AS
0.01
Ω
Unclamped Energy Test Circuit
Unclamped Energy Waveforms
R
L
+
–
R
G
V
DD
DUT
V
GS
Switching Time Test Circuit
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UF830
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
t
ON
t
DLY(ON)
t
OFF
t
DLY(OFF)
t
R
t
F
V
DS
90%
90%
10%
10%
0
90%
50%
V
GS
10%
50%
PULSE WIDTH
0
Resistive Switching Waveforms
Gate Charge Test Circuit
Gate Charge Waveforms
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QW-R502-046.I
UF830
Power MOSFET
TYPICAL CHARACTERISTICS
Normalized Power Dissipation vs. Case
Temperature
Maximum Contionuous Drain Current vs. Case
Temperature
5
1.2
1.0
4
0.8
0.6
3
2
0.4
0.2
0
1
0
150
150
50
100
25
50
75
100
125
0
Case Temperature, T
C
(°C)
Case Temperature,T
C
(°C)
Normalized Maximum Transient Thermal
Impedance
Forward Bias Safe Operating Area
100
10
Operation in This Region
is Limited by r
DS (on)
1
0.5
0.2
0.1
P
DM
0.1
0.05
t1
0.02
1
0.01
t2
*Notes:
Duty Factor, D=t1/t2
T
C
=25°C
T
J
=Max Rated
Single Pulse
Single pulse
Peak T
J
=P
DM
×Z
θ
JC
×R
θ
JC
+T
C
1
0.1
0.01
10
-5
10
-4
10
-3
10
-2
10
-1
10
2
10
3
10
1
10
Rectangular Pulse Duration, t
1
(s)
Drain to Source Voltage, V
DS
(V)
Output Characteristics
Saturation Characteristics
V
GS
=10V
5
4
6
5
4
Pulse Duration=80
μ
s
V
GS
=5.5V
V
GS
=10V
V
GS
=5.5V
Duty Cycle = 0.5% Max
V
GS
=5.0V
V
GS
=5.0V
3
2
Pulse Duration=80
μ
s
Duty Cycle = 0.5% Max
3
2
1
V
GS
=4.5V
V
GS
=4.5V
V
GS
=4.0V
1
0
V
GS
=4.0V
150
0
0
100
250
200
300
10
50
0
2
4
6
8
Drain to Source Voltage, V
DS
(V)
Drain to Source Voltage, V
DS
(V)
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UF830
Power MOSFET
TYPICAL CHARACTERISTICS (Cont.)
Drain to Source on Resistance vs.
Gate Voltage and Drain Current
Pulse Duration=80
μ
s
Duty Cycle = 0.5% Max
Transfer Characteristics
5
4
3
10
8
Pulse Duration=80
μ
s
Duty Cycle = 0.5% Max
V
DS
>
I
D(ON)
×r
DS(ON)MAX
6
T
J
= 125°C
T
J
= 25°C
T
J
= -40°C
V
GS
=10V
2
1
0
4
2
V
GS
=20V
0
7
4
8
20
1
2
3
12
16
4
6
0
5
0
Gate to Source Voltage, V
GS
(V)
Case Temperature, T
C
(°C)
Normalized Drain to Source on Resistance vs.
Junction Temperature
Normalized Drain to Source Breakdown Voltage vs.
Junction Temperature
2.2
1.8
1.4
1.25
1.15
1.05
0.95
0.85
0.75
I
D
=250
μ
A
Pulse Duration=80
μ
s
Duty Cycle = 0.5% Max
GS
=10V, I
D
=2.5A
V
1.0
0.6
0.2
20
Junction Temperature, T
J
(°C)
-20
140
-60
0
40 60
80 100
120
-40
120 140
160
80 100
0
60
20 40
-40
-20
Junction Temperature, T
J
(°C)
Capacitance vs. Drain to Source Voltage
V
GS
=0V, f=1MHz
Transconductance vs. Drain Current
2000
5
Pulse Duration=80
μ
s
Duty Cycle = 0.5% Max
C
ISS
=C
GS
+C
GD
T
J
= -40°C
T
J
= 25°C
T
J
= 125°C
C
RSS
=C
GD
C
OSS
=C
DS
+C
GS
4
1600
1200
800
400
0
3
2
1
0
C
ISS
C
OSS
C
RSS
50
3
4
5
1
20
30
30
2
1
10
0
Drain to Source Voltage, V
DS
(V)
Drain Current, I
D
(A)
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QW-R502-046.I
UF830
Power MOSFET
TYPICAL CHARACTERISTICS (Cont.)
Gate to Source Voltage vs.
Gate Charge
I
D
=4.5A
Source to Drain Diode Voltage
2
20
15
Pulse Duration=80
μ
s
Duty Cycle = 0.5% Max
100
5
V
DS
=100V
V
DS
=250V
2
10
5
10
T
J
=125°C
V
DS
=400V
T
J
=25°C
5
0
2
1
4
16
24
32
40
2
3
1
8
0
0
Gate Charge, Q
G
(nC)
Source to Drain Voltage, V
SD
(V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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