UTC-Unisonic-Tech-UFZ24NL-F-TO-220
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UNISONIC TECHNOLOGIES CO., LTD
UFZ24N
Power MOSFET
17A, 55V
N-CHANNEL
POWER MOSFET
1
1
TO-251
TO-220
DESCRIPTION
The UTC
UFZ24N
is N-channel enhancement mode power
MOSFET using UTC’s advanced technology to provide customers
with minimum
on-state resistance and superior switching
a
performance. The UTC
UFZ24N
is suitable for high efficiency
synchronous rectification in SMPS, primary side switch and telecom
bricks.
1
1
TO-252
SOT-223
FEATURES
* R
DS(ON)
≤ 0.07 Ω @ V
GS
=10V, I
D
=10A
* High switching speed
* Low gate charge
SYMBOL
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
1
2
3
UFZ24NL-AA3-R
UFZ24NL-TA3-T
UFZ24NL-TM3-T
UFZ24NL-TN3-T
UFZ24NL-TN3-R
UFZ24NG-AA3-R
UFZ24NG-TA3-T
UFZ24NG-TM3-T
UFZ24NG-TN3-T
UFZ24NG-TN3-R
SOT-223
TO-220
TO-251
TO-252
TO-252
G
G
G
G
G
D
D
D
D
D
S
S
S
S
S
Tape Reel
Tube
Tube
Tube
Tape Reel
Note: Pin
Assignment: G: Gate
D: Drain
S: Source
1 of 9
Copyright © 2022 Unisonic Technologies Co., Ltd
QW-R502-901.E
UFZ24N
Power MOSFET
MARKING
SOT-223
TO-220 / TO-251 / TO-252
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-901.E
UFZ24N
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
=25°С, unless otherwise specified)
PARAMETER
SYMBOL
V
DSS
RATINGS
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
55
V
GSS
±20
V
T
C
=25°C
17
A
Continuous
I
D
Drain Current
T
C
=100°C
10
A
Pulsed (Note 1)
Avalanche Current (Note 1)
I
DM
I
AR
40
A
10
A
Avalanche Energy
Single Pulsed (Note 2)
E
AS
dv/dt
135
mJ
V/ns
W
Peak Diode Recovery dv/dt (Note 3)
16
SOT-223
Power Dissipation
TO-220
3
45
P
D
W
(T
C
=25°C)
TO-251/TO-252
30
W
Junction Temperature
T
J
-55 ~ +175
-55 ~ +175
°C
°C
Storage Temperature Range
T
STG
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L=1.0mH, I
AS
=16A, V
DD
=25V, R
G
=25Ω, Starting T
J
=25°C.
4. I
SD
≤10A, di/dt≤200A/µs, V
DD
≤BV
DSS
, Starting T
J
≤175°C.
THERMAL DATA
PARAMETER
SYMBOL
θ
JA
RATING
150
UNIT
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
SOT-223
Junction to Ambient
TO-220
62.5
TO-251/TO-252
SOT-223
100
41.6 (Note)
2.77
Junction to Case
TO-220
θ
JC
TO-251/TO-252
4.16 (Note)
Note: The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper.
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-901.E
UFZ24N
Power MOSFET
ELECTRICAL CHARACTERISTICS
(T
J
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX
UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BV
DSS
I
DSS
I
D
=250µA, V
GS
=0V
55
V
V
DS
=55V, V
GS
=0V
V
GS
=+20V, V
DS
=0V
V
GS
=-20V, V
DS
=0V
25
µA
Forward
Reverse
+100 nA
-100 nA
Gate-Source Leakage Current
I
GSS
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
R
DS(ON)
V
DS
=V
GS
, I
D
=250µA
V
GS
=10V, I
D
=10A
2.0
4.0
V
Static Drain-Source On-State Resistance
DYNAMIC PARAMETERS
Input Capacitance
0.07
Ω
C
ISS
C
OSS
C
RSS
770
175
27
pF
pF
pF
Output Capacitance
V
DS
=25V, V
GS
=0V, f=1.0MHz
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge (Note 1)
Gate to Source Charge
Gate to Drain Charge
Q
G
Q
GS
Q
GD
t
D(ON)
t
R
28
8
nC
nC
nC
ns
ns
ns
ns
V
DS
=44V, V
GS
=10V, I
D
=17A ,
(Note 1, 2)
7
Turn-ON Delay Time (Note 1)
Rise Time
9
20
60
24
V
DD
=27V, V
GS
=10V, I
D
=17A,
R
G
=25Ω (Note 1, 2)
Turn-OFF Delay Time
Fall-Time
t
D(OFF)
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
Drain-Source Diode Forward Voltage (Note 1)
Reverse Recovery Time (Note 1)
I
S
I
SM
V
SD
t
rr
17
40
1.3
83
A
A
I
S
=10A, V
GS
=0V
I
S
=10A, V
GS
=0V,
dI
F
/dt =100A/µs
V
63
ns
Reverse Recovery Charge
Q
rr
93 180 nC
Note: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature.
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-901.E
UFZ24N
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
V
DS
90%
R
G
R
D
V
DS
V
GS
10V
10%
V
GS
DUT
t
R
t
d(OFF)
t
d(ON)
t
ON
t
F
t
OFF
Resistive Switching Waveforms
Resistive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-901.E
UFZ24N
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
DUT
V
DS
R
G
L
–
I
SD
V
GS
V
DD
Driver
Same Type
as DUT
dv/dt controlled by R
G
I
SD
controlled by pulse period
Gate Pulse Width
D=
V
GS
Gate Pulse Period
10V
(Driver)
I
FM
, Body Diode Forward Current
I
SD
di/dt
(DUT)
I
RM
Body Diode Reverse Current
V
DS
(DUT)
Body Diode Recovery dv/dt
V
SD
V
DD
Body Diode Forward
Voltage Drop
Peak Diode Recovery dv/dt Test Circuit and Waveforms
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QW-R502-901.E
UFZ24N
Power MOSFET
TYPICAL CHARACTERISTICS
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-901.E
UFZ24N
Power MOSFET
TYPICAL CHARACTERISTICS (Cont.)
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-901.E
UFZ24N
Power MOSFET
TYPICAL CHARACTERISTICS (Cont.)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all UTC products described or contained herein.
UTC products are not designed for use in life support appliances, devices or systems where malfunction
of these products can be reasonably expected to result in personal injury. Reproduction in whole or in
part is prohibited without the prior written consent of the copyright owner. UTC reserves the right to
make changes to information published in this document, including without limitation specifications and
product descriptions, at any time and without notice.
This document supersedes and replaces all
information supplied prior to the publication hereof.
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-901.E
