UTC-Unisonic-Tech-UT100N03L-TA3-T
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UNISONIC TECHNOLOGIES CO., LTD
UT100N03
Power MOSFET
100A, 30V
N-CHANNEL
POWER MOSFET
1
1
DESCRIPTION
TO-220
TO-251
TO-220F
The
UT100N03
uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and operation with
low gate voltages. This device is suitable for use as a load
switch or in PWM applications.
1
1
TO-252
FEATURES
1
* R
DS(ON)
< 5.3m
Ω
@V
GS
=10 V, I
D
=50 A
* R
DS(ON)
< 8.0m
Ω
@V
GS
=4.5 V, I
D
=40 A
1
DFN-8(5×6)
TO-263
SYMBOL
Drain
Gate
Source
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
TO-220
Packing
Lead Free
Halogen Free
1
2
3
S
S
S
S
S
S
S
4
–
–
–
–
–
–
–
5
–
–
–
–
–
–
–
6
–
–
–
–
–
–
–
7
–
–
–
–
–
–
–
8
–
–
–
–
–
–
–
UT100N03L-TA3-T
UT100N03L-TF3-T
UT100N03L-TM3-T
UT100N03L-TN3-R
UT100N03L-TND-R
UT100N03L-TQ2-T
UT100N03L-TQ2-R
–
UT100N03G-TA3-T
UT100N03G-TF3-T
UT100N03G-TM3-T
UT100N03G-TN3-R
UT100N03G-TND-R
UT100N03G-TQ2-T
UT100N03G-TQ2-R
G D
Tube
Tube
TO-220F G
D
TO-251
TO-252
G D
G D
Tube
Tape Reel
Tape Reel
Tube
TO-252D G
D
TO-263
TO-263
G D
G D
Tape Reel
UT100N03G-K08-5060-R DFN-8(5×6)
S
S S G D D D D
Tape Reel
Note: Pin
Assignment: G: Gate
D: Drain
S: Source
1 of 7
Copyright © 2015 Unisonic Technologies Co., Ltd
QW-R502-193.H
UT100N03
Power MOSFET
MARKING
TO-251 / TO-252 / TO-252D / TO-263
DFN-8(5×6)
UNISONIC TECHNOLOGIES CO., LTD
2 of 8
QW-R502-193.H
UT100N03
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
=25°
С
, unless otherwise specified)
PARAMETER
SYMBOL
V
DSS
V
GSS
I
D
RATINGS
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
30
±20
100
400
35
V
Continuous Drain Current
A
Pulsed Drain Current (Note 2)
I
DM
A
Single Pulsed Avalanche Current (Note 3)
Single Pulsed Avalanche Energy (Note 3)
I
AS
A
E
AS
875
100
36
mJ
TO-220/TO-263
TO-220F
Power Dissipation
P
D
W
TO-251/TO-252
TO-252D
50
DFN-8(5×6)
21
Junction Temperature
Strong Temperature
T
J
+175
°
С
°
С
T
STG
-55 ~ +175
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by maximum junction temperature
3. L = 0.5mH, I
AS
= 35A, V
DD
= 25V, R
G
= 25
Ω
, Starting T
J
= 25°
С
.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
62.5
UNIT
TO-220/TO-220F
TO-263
Junction to Ambient
Junction to Case
θ
JA
°
С
/W
TO-251/TO-252
TO-252D
110
DFN-8(5×6)
TO-220/TO-263
TO-220F
40.3 (Note 1, 2)
1.5
3.47
θ
JC
°
С
/W
TO-251/TO-252
TO-252D
3
DFN-8(5×6)
6 (Note 1, 2)
Notes: 1. Maximum under Steady State conditions is 90 °C/W.
2. Surface Mounted on 1″ x 1″ FR4 board.
UNISONIC TECHNOLOGIES CO., LTD
3 of 8
QW-R502-193.H
UT100N03
Power MOSFET
ELECTRICAL CHARACTERISTICS
(T
J
=25°
С
, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX
UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
(Note2)
Gate Threshold Voltage
BV
DSS
I
DSS
V
GS
=0 V, I
D
=250 µA
30
V
V
DS
=30 V,V
GS
=0 V
1
µA
I
GSS
V
DS
=0 V, V
GS
= ±20 V
±100 nA
V
GS(TH)
R
DS(ON)
V
DS
=V
GS
, I
D
=250 µA
V
GS
=10 V, I
D
=50 A
1
3
V
3.05 5.3
Static Drain-Source On-Resistance
m
Ω
V
GS
=4.5 V, I
D
=40 A
4.2
8
DYNAMIC PARAMETERS
(Note3)
Input Capacitance
C
ISS
C
OSS
C
RSS
9500
800
V
DS
=15V, V
GS
=0V, f=1.0MHz
pF
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
(Note3)
Total Gate Charge
300
Q
G
Q
GS
Q
GD
t
D(ON)
t
R
50
20.8
19
65
V
DS
=15V, V
GS
=5V, I
D
=16A
nC
ns
Gate Source Charge
Gate Drain Charge
Turn-ON Delay Time
25.7 50
10 20
128 200
Turn-ON Rise Time
V
DD
=15V, I
D
=1A, R
GEN
=6
ꢀ
V
GS
=10 V
Turn-OFF Delay Time
Turn-OFF Fall-Time
t
D(OFF)
t
F
34
70
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
Drain-Source Diode Forward Current
V
SD
I
S
I
S
=20 A,V
GS
=0 V
1.5
90
V
A
Notes: 1. Pulse Test : Pulse Width < 300
μ
s, Duty Cycle < 2%.
2. Guaranteed by design, not subject to production testing.
UNISONIC TECHNOLOGIES CO., LTD
4 of 8
QW-R502-193.H
UT100N03
Power MOSFET
TEST CIRCUIT AND WAVEFORM
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-193.H
UT100N03
Power MOSFET
TYPICAL CHARACTERISTICS
Output Characteristics
Transfer Characteristics
50
40
30
100
80
60
40
20
0
V
GS
=10,8,6,4V
V
GS
=3V
20
10
0
25
℃
T
J
=125
℃
-55
℃
4
0
1
3
4
5
0
1
2
2
3
Drain to Source Voltage,V
DS
(V)
Gate to Source Voltage,V
GS
(V)
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-193.H
UT100N03
Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-193.H
UT100N03
Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)
Normalized Thermal Transient Impedanc Curve
10
0
10
-1
10
-2
D=0.5
0.2
0.1
P
DM
t
1
0.05
0.02
t
2
1.R
θ
JC
(t)=r(t)*R
θ
JC
0.01
2.R
θ
JC
=See Datasheet
3.T
JM
-T
C
=P*R
θ
JC
(t)
4.Duty Cycle,D=t
1
/t
2
Single Pulse
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
Square Wave Pulse Duration (sec)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
8 of 8
QW-R502-193.H
