UTC-Unisonic-Tech-UT3N06L-TM3-T

UNISONIC TECHNOLOGIES CO., LTD  

UT3N06  

Power MOSFET  

N-CHANNEL ENHANCEMENT  

MODE POWER MOSFET  



DESCRIPTION  

The UTC

UT3N06

is an N-channel power MOSFET  

providing very low on-resistance. It has high efficiency and  

perfect cost-effectiveness. It can be generally applied in the  

commercial and industrial fields.  



FEATURES  

* Simple drive requirement  



SYMBOL  

Drain  

Gate  

Source  



ORDERING INFORMATION  

Ordering Number  

Pin Assignment  

Package  

Packing  

Lead Free  

Halogen Free  

1

2

D

G

D

D

3

S

D

S

S

SOT-89  

SOT-23  

TO-251  

TO-252  

Tape Reel  

Tape Reel  

Tube  

–

UT3N06G-AB3-R  

UT3N06G-AE3-R  

UT3N06G-TM3-T  

UT3N06G-TN3-R  

G

S

G

G

–

UT3N06L-TM3-T  

UT3N06L-TN3-R  

Tape Reel  

Note: Pin Assignment: G: Gate

 

D: Drain  

S: Source  



MARKING  

SOT-89  

SOT-23  

TO-251 / TO-252  

1 of 4  

Copyright © 2014 Unisonic Technologies Co., Ltd  

QW-R502-366.G  

UT3N06  

Power MOSFET  



ABSOLUTE MAXIMUM RATINGS  

PARAMETER  

SYMBOL  

V

DSS  

RATINGS  

60  

UNIT  

V

Drain-Source Voltage  

Gate-Source Voltage  

V

GSS  

±20  

V

Continuous Drain Current  

(V

GS

=4.5V, T

A

= 25°C) (Note 2)  

Pulsed Drain Current (Note 3, 4)  

I

D  

3.0  

A

I

DM  

10  

0.35  

A

SOT-23  

Power Dissipation (T

A

= 25°C)

 

SOT-89  

TO-251/TO-252  

W

W

W

°C  

°C  

P

D  

0.69  

1.13  

Junction Temperature  

Storage Temperature  

T

J  

+150  

T

STG  

-55 ~ +150  

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.  

Absolute maximum ratings are stress ratings only and functional device operation is not implied.  

2. Surface mounted on 1 in

2

copper pad of FR4 board; 270°C/W when mounted on min. copper pad  

3. Pulse width limited by T

J(MAX)  

4. Pulse width

≤

300

μ

s, duty cycle

≤

2%  



THERMAL DATA  

PARAMETER  

SYMBOL  

RATING  

350  

UNIT  

°C/W  

°C/W  

°C/W  

SOT-23  

Junction to Ambient  

SOT-89  

θ

JA  

180  

TO-251/TO-252  

110  



ELECTRICAL CHARACTERISTICS

(T

J

= 25°C, unless otherwise specified)  

PARAMETER SYMBOL

 

TEST CONDITIONS  

MIN TYP

 

MAX UNIT  

OFF CHARACTERISTICS  

Drain-Source Breakdown Voltage  

BV

DSS

V

GS

=0V, I

D

=250µA  

60  

V

∆

BV

DSS  

Breakdown Voltage Temperature Coefficient  

Reference to 25°C, I

D

=1mA  

0.05  

V/°C  

µA  

∆

T

J  

I

DSS  

I

GSS  

Drain-Source Leakage Current  

Gate-Source Leakage Current  

ON CHARACTERISTICS  

Gate Threshold Voltage  

V

DS

=60V,V

GS

=0V  

V

GS

=±20V  

10  

±100 nA  

V

GS(TH)

V

DS

=V

GS

, I

D

=250µA  

1.0  

3.0  

90  

V

V

GS

=10V, I

D

=3A  

m

Ω  

Drain to Source On-state Resistance  

R

DS(ON)  

V

GS

=4.5V, I

D

=2A  

120 m

Ω  

DYNAMIC PARAMETERS  

Input Capacitance  

C

ISS  

C

OSS  

C

RSS  

490 780  

pF  

pF  

pF  

Output Capacitance  

V

DS

=25V,V

GS

=0V,f =1.0MHz  

55  

40  

Reverse Transfer Capacitance  

SWITCHING PARAMETERS  

Turn-ON Delay Time (Note)  

Turn-ON Rise Time  

t

D(ON)  

t

R  

t

D(OFF)  

t

F  

6

ns  

ns  

5

16  

3

42  

V

GS

=10V, V

DS

=30V, I

D

=1A,  

R

D

=30

Ω

, R

G

=3.3

Ω  

Turn-OFF Delay Time  

Turn-OFF Fall-Time  

ns  

58  

10  

ns  

Total Gate Charge (Note)  

Gate Source Charge  

Q

G  

6

nC  

nC  

nC  

Q

GS  

Q

GD  

V

GS

=4.5V, V

DS

=48V, I

D

=3A  

1.6  

3

Gate Drain Charge  

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS  

Drain-Source Diode Forward Voltage (Note)  

Reverse Recovery Time  

V

SD  

t

rr  

I

S

=1.2A, V

GS

=0V  

1.2  

V

25  

26  

ns  

nC  

I

S

=3A,V

GS

=0V, dI/dt=100A/µs  

Reverse Recovery Charge  

Q

RR  

Note: Pulse width

≤

300

μ

s, duty cycle

≤

2%.  

UNISONIC TECHNOLOGIES CO., LTD  

2 of 4  

QW-R502-366.G  

UT3N06  

Power MOSFET  



TEST WAVEFORMS  

V

G  

Q

G  

4.5V  

Q

GS  

Q

GD  

Charge  

Gate Charge Waveform  

Q

Switching Time Waveform  

UNISONIC TECHNOLOGIES CO., LTD  

3 of 4  

QW-R502-366.G  

UT3N06  

Power MOSFET  



TYPICAL CHARACTERISTICS  

UTC assumes no responsibility for equipment failures that result from using products at values that  

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  

other parameters) listed in products specifications of any and all UTC products described or contained  

herein. UTC products are not designed for use in life support appliances, devices or systems where  

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  

whole or in part is prohibited without the prior written consent of the copyright owner. The information  

presented in this document does not form part of any quotation or contract, is believed to be accurate  

and reliable and may be changed without notice.  

UNISONIC TECHNOLOGIES CO., LTD  

4 of 4  

QW-R502-366.G