UTC-Unisonic-Tech-UTT30P06L-TN3-R
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UNISONIC TECHNOLOGIES CO., LTD
UTT30P06
Power MOSFET
-60V, -30A
P-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC
UTT30P06
is a P-channel power MOSFET using UTC’s
advanced technology to provide the customers with high switching
speed and a minimum on-state resistance. It can also withstand high
energy in the avalanche.
The UTC
UTT30P06
is suitable for low voltage and high speed
switching applications
FEATURES
* R
DS(ON)
≤
60 m
Ω
@ V
GS
= -10V, I
D
= -15A
DS(ON)
≤
85 m
Ω
@ V
GS
=-4.5V, I
D
=-15A
* High Switching Speed
R
SYMBOL
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
1
2
D
D
D
D
D
D
3
S
S
S
S
S
S
UTT30P06L-TA3-T
UTT30P06L-TF3-T
UTT30P06L-TM3-T
UTT30P06L-TN3-R
UTT30P06L-TQ2-T
UTT30P06L-TQ2-R
Note: Pin
Assignment: G: Gate
UTT30P06G-TA3-T
UTT30P06G-TF3-T
UTT30P06G-TM3-T
UTT30P06G-TN3-R
UTT30P06G-TQ2-T
UTT30P06G-TQ2-R
TO-220
TO-220F
TO-251
TO-252
TO-263
TO-263
G
G
G
G
G
G
Tube
Tube
Tube
Tape Reel
Tube
Tape Reel
D: Drain
S: Source
1 of 9
Copyright © 2018 Unisonic Technologies Co., Ltd
QW-R502-622.H
UTT30P06
Power MOSFET
MARKING
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-622.H
UTT30P06
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
V
DSS
V
DGR
V
GSS
I
D
RATINGS
-60
UNIT
V
Drain-Source Voltage
Drain-Gate Voltage (R
GS
=1.0 M
Ω
)
-60
V
Gate-Source Voltage
Continuous
±15
V
Continuous T
C
=25°C
Pulsed (t
p
≤
10
μ
s)
TO-220/TO-263
TO-220F
-30
A
Drain Current
I
DM
-50
A
89
W
W
W
°C
°C
Power Dissipation
P
D
38
TO-251/TO-252
44
Junction Temperature
Storage Temperature
T
J
+150
-55 ~ +150
T
STG
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. When surface mounted to an FR4 board using the minimum recommended pad size.
THERMAL DATA
PARAMETER
TO-220/TO-220F
SYMBOL
RATINGS
62.5
UNIT
°C/W
Junction to Ambient
Junction to Case
TO-263
θ
JA
TO-251/TO-252
TO-220/TO-263
TO-220F
110
1.4
°C/W
°C/W
°C/W
°C/W
θ
JC
3.28
2.84
TO-251/TO-252
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-622.H
UTT30P06
Power MOSFET
ELECTRICAL CHARACTERISTICS
(T
J
=25°C, unless otherwise specified)
PARAMETER SYMBOL
TEST CONDITIONS
MIN TYP
MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BV
DSS
I
D
=-0.25mA, V
GS
=0V
-60
V
I
DSS
V
DS
=-60V, V
GS
=0V
V
GS
=+15V, V
DS
=0V
V
GS
=-15V, V
DS
=0V
-10
+100
-100
µA
nA
nA
Gate- Source Leakage
Current
Forward
Reverse
I
GSS
ON CHARACTERISTICS
(Note 1)
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=-250µA
-1.2
-2.4
60
V
m
ꢀ
m
ꢀ
V
V
GS
=-10V, I
D
=-15A
R
DS(ON)
Static Drain-Source On-State Resistance
Drain-Source On-Voltage
V
GS
=-4.5V, I
D
=-15A
85
V
GS
=-10V, I
D
=-30A
V
DS(ON)
-2.9
-2.8
V
GS
=-10V, I
D
=-15A, T
J
=150°C
V
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
C
OSS
C
RSS
1478
120
pF
pF
pF
V
GS
=0V, V
DS
=-25V, f=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
(Note 2)
Total Gate Charge
108
Q
G
Q
GS
Q
GD
t
D(ON)
t
R
40
3.6
9.6
5.6
17
nC
nC
nC
ns
ns
ns
ns
V
GS
=-10V, V
DS
=-48V, I
D
=-30A
Gate-Source Charge
Gate-Drain Charge
I
G
=1mA
Turn-ON Delay Time
Rise Time
V
GS
=-10V, V
DD
=-30V,
I
D
=-1A, R
G
=9.1
ꢀ
Turn-OFF Delay Time
Fall-Time
t
D(OFF)
t
F
64
38
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Continuous Drain-Source Diode
Forward Current
I
S
-30
A
A
Maximum Pulsed Drain-Source Diode
Forward Current
I
SM
-50
Drain-Source Diode Forward Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
V
SD
t
rr
I
S
=-30A, V
GS
=0V
I
S
=-30A, V
GS
=0V,
dI
S
/dt=-100A/µs
-3.0
V
175
ns
µC
Q
rr
0.69
Notes: 1. Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
2. Switching characteristics are independent of operating junction temperature.
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-622.H
UTT30P06
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Peak Diode Recovery dv/dt Test Circuit
P. W.
Period
V
GS
(Driver)
Period
D=
P.W.
10V
=
V
GS
I
FM
, Body Diode Forward Current
I
RM
I
SD
(D.U.T.)
di/dt
Body Diode Reverse Current
V
DS
(D.U.T.)
V
DD
Body Diode Recovery dv/dt
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-622.H
UTT30P06
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Switching Test Circuit
Switching Waveforms
Gate Charge Test Circuit
Gate Charge Waveform
BV
DSS
I
AS
I
D(t)
V
DS(t)
V
DD
Time
t
p
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
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QW-R502-622.H
UTT30P06
Power MOSFET
TYPICAL CHARACTERISTICS
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QW-R502-622.H
UTT30P06
Power MOSFET
TYPICAL CHARACTERISTICS (Cont.)
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QW-R502-622.H
UTT30P06
Power MOSFET
TYPICAL CHARACTERISTICS (Cont.)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all UTC products described or contained herein.
UTC products are not designed for use in life support appliances, devices or systems where malfunction
of these products can be reasonably expected to result in personal injury. Reproduction in whole or in
part is prohibited without the prior written consent of the copyright owner. UTC reserves the right to
make changes to information published in this document, including without limitation specifications and
product descriptions, at any time and without notice.
This document supersedes and replaces all
information supplied prior to the publication hereof.
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-622.H
