UTC-Unisonic-Tech-XL1225G-AB-AE3-R
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UNISONIC TECHNOLOGIES CO.,LTD.
XL/ML1225
SCR
MEDIUM POWER LOW
VOLTAGE TRANSISTOR
DESCRIPTION
The
XL1225/ML1225
silicon controlled rectifiers are high
performance planner diffused PNPN devices. These parts are
intended for low cost high volume applications.
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
–
Halogen Free
1
G
K
K
G
K
K
2
K
G
G
K
G
G
3
A
A
A
A
A
A
XL1225G-xx-AE3-R
XL1225G-xx-T92-B
XL1225G-xx-T92-K
ML1225G-xx-AE3-R
ML1225G-xx-T92-B
ML1225G-xx-T92-K
SOT-23
TO-92
TO-92
SOT-23
TO-92
TO-92
Tape Reel
Tape Box
Bulk
XL1225L-xx-T92-B
XL1225L-xx-T92-K
–
Tape Reel
Tape Box
Bulk
ML1225L-xx-T92-B
ML1225L-xx-T92-K
Note: Pin Assignment : G: Gate
K: Cathode
A: Anode
MARKING
MARKING
Package
XL1225
ML1225
L25G
SOT-23
TO-92
1 of 3
Copyright © 2014 Unisonic Technologies Co.,LTD.
QW-R301-003.G
XL/ML1225
SCR
ABSOLUATE MAXIUM RATINGS
(Ta= 25
C, unless otherwise specified)
PARAMETER
SYMBOL
V
DRM
RATINGS
400
UNIT
V
XL1225
ML1225
Repetitive Peak Off-State Voltage
(T
J
=40 ~ 125
C, R
GK
=1k
Ω
)
On-State Current (Tc=40
C)
Average On-State Current
(Half Cycle=180,Tc=40
C)
Peak Reverse Gate Voltage (IGR=10
A)
Peak Gate Current (10
s Max.)
Gate Dissipation (20ms Max.)
Junction Temperature
300
I
T(RMS)
I
T(AV)
V
GRM
I
GM
0.8
A
A
0.5
1
V
0.1
A
P
G(AV)
T
J
150
mW
C
C
+125
-40 ~ +150
Storage Temperature
T
STG
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. The device is guaranteed to meet performance specification within 0
℃
~70
℃
operating temperature range
and assured by design from –20
C ~85
C.
ELECTRICAL CHARACTERISTICS
(Ta= 25
C, unless otherwise specified.)
PARAMETER
Off State Leakage Current
Off State Leakage Current
SYMBOL
I
DRM
TEST CONDITIONS
V
DRM
(R
GK
=1K
Ω
), T
J
=125
C
V
DRM
(R
GK
=1K
Ω
), T
J
=25
C
AT I
T
=0.4A
MIN TYP MAX
UNIT
0.1
1.0
1.4
2.2
0.95
600
200
0.8
5
mA
I
DRM
μ
A
On State Voltage
V
T
V
AT I
T
=0.8A
On State Threshold Voltage
On State Slops Resistance
Gate Trigger Current
V
T(TO)
T
J
=125
C
V
m
Rt
I
GT
V
GT
I
H
T
J
=125
C
V
D
=7V
μ
A
V
Gate Trigger Voltage
V
D
=7V
Holding Current
R
GK
=1K
Ω
R
GK
=1K
Ω
mA
mA
V/
μ
s
A/
μ
s
μ
s
Latching Current
I
L
6
Critical Rate of Voltage Rise
Critical Rate of Current Rise
Gate Controlled Delay Time
DV/DT V
D
=0.67×V
DRM
(R
GK
=1K
Ω
),T
J
=125
C
DV/DT I
G
=10mA, dI
G
/dt=0.1A/
μ
s,T
J
=125
C
T
GD
I
G
=10mA, dI
G
/dt=0.1A/
μ
s
T
J
=85
C, V
D
=0.67*V
DRM
, V
R
=35V,
I
T
=I
T(AV)
2.2
Commutated Turn-off Time
TG
200
μ
s
CLASSIFICATION OF I
GT
RANK
B
C
AA
AB
AC
AD
25-50
RANGE
50-100
100-200
8-15
15-20
20-25
UNISONIC TECHNOLOGIES CO., LTD
2 of 3
QW-R301-003.G
XL/ML1225
SCR
■
TYPICAL CHARACTERICS
10
MAXIMUM @Tj=25
℃
1
0.1
0.5
0.8
1.1
1.7
2.0
2.3
2.6
2.9
3.2
3.5
1.4
V
T
,INSTANTANEOUS ON-STATE VOLTAGE (V)
Figure 5. Typical On-State Characteristics
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
3 of 3
QW-R301-003.G
