VBsemi-Elec-2SJ177-VB
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2SJ177
P-Channel 60 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
V
DS
(V)
R
DS(on)
(
) Max.
I
D
(A)
Q
g
(Typ.)
Definition
•
•
•
TrenchFET
®
Power MOSFET
100 % R
g
and UIS Tested
0.050 at
V
GS
= – 10 V
0.060 at
V
GS
= – 4.5 V
– 30
– 24
– 60
67
Compliant to RoHS Directive 2002/95/EC
TO-220 FULLPAK
S
G
S
D
D
G
P-Channel MOSFET
Top
V
ie
w
ABSOLUTE MAXIMUM RATINGS
(T =
25 °C, unless otherwise noted)
C
Parameter
Symbol
Limit
– 60
Unit
V
DS
Drain-Source Voltage
Gate-Source Voltage
V
V
GS
± 20
T
C
= 25 °C
T
C
= 70 °C
– 30
– 29
– 100
– 32
51
Continuous Drain Current (T
J
= 150 °C)
I
D
A
I
DM
I
AS
Pulsed Drain Current (t = 300 µs)
Avalanche Current
Single Avalanche Energy
a
E
AS
L = 0.1 mH
T
C
= 25 °C
mJ
W
41.7
b
2.1
Maximum Power Dissipation
a
P
D
T
A
= 25 °C
c
T
J
, T
stg
Operating Junction and Storage
T
e
mperature Range
– 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (PCB Mount)
c
Symbol
Limit
60
Unit
R
thJA
°C/W
R
thJC
Junction-to-Case (Drain)
3
Notes:
a. Duty cycle
1 %.
b. See SOA curve for voltage derating.
c. When mounted on 1″ square PCB (FR-4 material).
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1
2SJ177
SPECIFICATIONS
(T =
25 °C, unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
V
DS
V
GS(th)
I
GSS
V
DS
= 0
V
,
I
D
= – 250 µA
V
DS
= V
GS
, I
D
= – 250 µA
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
– 60
– 1
V
– 2.5
± 250
– 1
V
DS
= 0
V
,
V
GS
= ± 20 V
nA
V
DS
= – 60
V
,
V
GS
= 0 V
I
DSS
V
DS
= – 60
V
,
V
GS
= 0
V
,
T
J
= 125 °C
Zero Gate Voltage Drain Current
– 50
µA
V
DS
= – 60
V
,
V
GS
= 0
V
,
T
J
= 150 °C
V
DS
– 10
V
,
V
GS
= – 10 V
V
GS
= – 10
V
,
I
D
= – 14 A
– 250
On-State Drain Current
a
I
D(on)
R
DS(on)
g
fs
– 30
A
S
0.050
0.060
40
Drain-Source On-State Resistance
a
Forward
T
r
ansconductance
a
V
GS
= – 4.5
V
,
I
D
= – 12 A
V
DS
= – 20
V
,
I
D
= – 14 A
Dynamic
b
C
iss
C
oss
C
rss
Q
g
Input Capacitance
Output Capacitance
Reverse
T
r
ansfer Capacitance
T
o
tal Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Gate Resistance
T
u
rn-On Delay Time
c
Rise Time
c
1765
230
180
67
V
GS
= 0
V
,
V
DS
= – 20
V
, f = 1
M
Hz
pF
Q
gs
Q
gd
R
g
V
DS
= – 20
V
,
V
GS
= – 10
V
,
I
D
= – 14 A
f = 1 MHz
13.5
14
nC
0.5
2.5
10
5
t
d(on)
t
r
t
d(off)
t
f
20
20
63
20
11
V
DD
= – 20
V
,
R
L
= 2
ns
T
u
rn-Off Delay Time
c
Fall Time
c
I
D
– 10 A, V
GEN
= – 10
V
,
R
g
= 1
42
12
Drain-Source Body Diode Ratings and Characteristics
T
C
= 25 °C
b
I
S
I
SM
Continuous Current
– 36
– 100
– 1.5
57
A
Pulsed Current
Forward Voltage
a
V
SD
t
rr
I
F
= – 10 A, V
GS
= 0 V
– 0.8
38
V
ns
A
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
I
RM(REC)
Q
rr
I
F
= – 10 A, dI/dt = 100 A/µs
2.3
40
3.5
60
nC
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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2
2SJ177
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
40
30
20
10
0
0.100
0.080
0.060
0.040
0.020
0.000
V
GS
= 10 V thru 4 V
V
GS
= 4.5 V
V
GS
= 10 V
V
GS
= 3 V
0
2
0
20
40
60
80
100
0
0
0
0.5
1
1.5
2
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
Output Characteristics
On-Resistance vs. Drain Current
1.0
0.8
0.6
0.4
0.2
0
0.040
0.034
0.028
0.022
0.016
0.010
I
D
= 14 A
T
C
= 25
°
C
T
J
= 125
°
C
T
C
= 125
°
C
T
J
= 25
°
C
T
C
= – 55
°
C
1
4
5
2
3
4
6
8
10
V
GS
– Gate-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Transfer Characteristics
On-Resistance vs. Gate-to-Source Voltage
50
40
30
20
10
0
10
8
T
C
= – 55 °C
T
C
= 25 °C
I
D
= 14 A
V
DS
= 20 V
6
T
C
= 125 °C
V
DS
= 10 V
4
V
DS
= 32 V
2
0
14
28
42
56
70
6
12
18
24
30
Q
g
– Total Gate Charge (nC)
I
D
– Drain Current (A)
Transconductance
Gate Charge
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3
2SJ177
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
2.3
2.0
1.7
1.4
1.1
100
10
1
I
D
= 250 μA
T
J
= 150
°
C
T
J
= 25
°
C
0.1
– 50
– 25
0
25
50
75
100 125 150
0.0
0.2
0.4
0.6
0.8
1.0
1.2
T
J
– Temperature (
°
C)
V
SD
– Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
Threshold Voltage
2500
2000
1500
1000
500
51
49
47
45
43
I
D
= 250 μA
C
iss
C
oss
C
rss
0
– 50
– 25
0
25
50
75
100 125 150
0
10
20
30
40
V
DS
– Drain-to-Source Voltage (V)
T
J
– Temperature (
°
C)
Capacitance
Drain Source Breakdown vs. Junction Temperature
2.2
40
I
D
= 14 A
V
GS
= 10 V
1.9
1.6
1.3
1.0
0.7
30
20
10
0
V
GS
= 4.5 V
– 50
– 25
0
25
50
75
100 125 150
0
25
50
75
100
125
150
T
J
– Junction Temperature (
°
C)
T
C
– Case Temperature (
°
C)
On-Resistance vs. Junction Temperature
Current Derating
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4
2SJ177
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
10
1
1000
100
10
100 μs
1 ms
T
J
= 150
°
C
T
J
= 25
°
C
Limited by
R
DS(on)
*
10 ms
DC, 1 s, 100 ms
1
0.1
0.01
T
C
= 25
°
C
Single Pulse
BVDSS Limited
10
0.1
1
100
0.000001 0.00001
0.0001
0.001
0.01
0.1
V
DS
– Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Time (s)
Single Pulse Avalanche Current Capability vs. Time
Safe Operating Area
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (s)
1
10
30
Normalized Thermal Transient Impedance, Junction-to-Case
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5
2SJ177
TO-220 FULLPAK (HIGH VOLTAGE)
A
E
A1
Ø P
n
d1
d3
D
u
L1
V
L
b
3
A2
b
2
c
b
e
MILLIMETERS
INCHES
DIM.
A
MIN.
4.570
2.570
2.510
0.622
1.229
1.229
0.440
8.650
15.88
12.300
10.360
MAX.
4.830
2.830
2.850
0.890
1.400
1.400
0.629
9.800
16.120
12.920
10.630
MIN.
0.180
0.101
0.099
0.024
0.048
0.048
0.017
0.341
0.622
0.484
0.408
MAX.
0.190
0.111
0.112
0.035
0.055
0.055
0.025
0.386
0.635
0.509
0.419
A1
A2
b
b2
b3
c
D
d1
d3
E
e
2.54 BSC
0.100 BSC
L
13.200
3.100
6.050
3.050
2.400
0.400
13.730
3.500
6.150
3.450
2.500
0.500
0.520
0.122
0.238
0.120
0.094
0.016
0.541
0.138
0.242
0.136
0.098
0.020
L1
n
Ø P
u
v
ECN: X09-0126-Rev. B, 26-Oct-09
DWG: 5972
Notes
1. To be used only for process drawing.
2. These dimensions apply to all TO-220, FULLPAK leadframe versions 3 leads.
3. All critical dimensions should C meet C
pk
> 1.33.
4. All dimensions include burrs and plating thickness.
5. No chipping or package damage.
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6
2SJ177
Disclaimer
All products due to improve reliability, function or design or for other reasons, product specifications and
data are subject to change without notice.
Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their
representatives (collectively, the “
T
aiwan VBsemi”), assumes no responsibility for any errors, inaccuracies or
incomplete data contained in the table or any other any disclosure of any information related to the
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any goods or continuous production.
T
o
t
he maximum extent permitted by applicable law on
T
aiwan VBsemi
relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability,
including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties,
including a particular purpose, non-infringement and merchantability guarantee.
Statement on certain types of applications are based on knowledge of the product is often used in a typical
application of the general product VBsemi
T
aiwan demand that the Taiwan VBsemi of. Statement on whether the
product is suitable for a particular application is non-binding. It is the customer’s responsibility to verify specific
product features in the products described in the specification is appropriate for use in a particular application.
Parameter data sheets and technical specifications can be provided may vary depending on the application and
performance over time. All operating parameters, including typical parameters must be made by customer’s
technical experts validated for each customer application. Product specifications do not expand or modify
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aiwan
VBsemi purchasing terms and conditions, including but not limited to warranty herein.
Unless expressly stated in writing,
T
aiwan VBsemi products are not intended for use in medical, life saving,
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aiwan VBsemi such applications using client did not express their
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aiwan VBsemi people who are related to product design applications and
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Material Category Policy
Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be
RoHS compliant and meets the definition of restrictions under Directive of the European Parliament
2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and
electronic equipment (EEE) – modification, unless otherwise specified as
inconsistent.(www.VBsemi.com)
Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We
confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive
2011/65 /.
Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as
halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese
VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products
conform to confirm compliance with IEC 61249-2-21 standard level JS709A.
