VBsemi-Elec-2SJ210-T1B-A-VB
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2SJ210-T1B-A
P-Channel 60 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
V
DS
(V)
R
DS(on)
(
)
V
GS(th)
(V)
I
D
(mA)
Definition
•
•
TrenchFET
®
Power MOSFET
High-Side Switching
– 60
3 at
V
GS
= – 10 V
– 1 to – 3
-500
• Low
On-Resistance: 3
•
•
•
•
Low Threshold: – 2 V (typ.)
Fast Swtiching Speed: 20 ns (typ.)
Low Input Capacitance: 20 pF (typ.)
Compliant to RoHS Directive 2002/95/EC
S
TO-236
(SOT-23)
G
G
S
1
2
3
D
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
T =
25 °C, unless otherwise noted
A
Parameter
Symbol
Limit
– 60
Unit
V
DS
V
GS
Drain-Source Voltage
Gate-Source Voltage
V
20
T
A
= 25 °C
– 500
– 350
-1500
460
Continuous Drain Current
a
Pulsed Drain Current
b
I
D
T
A
= 100 °C
mA
I
DM
P
D
T
A
= 25 °C
Power Dissipation
a
m
W
T
A
= 100 °C
240
Maximum Junction-to-Ambient
a
350
°C/
W
R
thJA
T
J,
T
stg
Operating Junction and Storage
T
e
mperature Range
– 55 to 150
°C
Notes:
a. Surface mounted on FR4 board.
b. Pulse width limited by maximum junction temperature.
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1
2SJ210-T1B-A
SPECIFICATIONS
T =
25 °C, unless otherwise noted
A
Limits
Typ.
a
Parameter
Symbol
Test Conditions
Min.
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
V
DS
V
GS
= 0
V
,
I
D
= – 10 µA
– 60
– 1
V
V
GS(th)
V
DS
= V
GS
, I
D
= – 250 µA
– 3
10
V
DS
= 0
V
,
V
GS
=
=
20 V
10 V
µA
V
DS
= 0
V
,
V
GS
200
500
100
– 25
– 250
Gate-Body Leakage
I
GSS
V
DS
= 0
V
,
V
GS
=
10
V
,
T
J
= 85 °C
5 V
V
DS
= 0
V
,
V
GS
=
nA
V
DS
= – 60
V
,
V
GS
= 0 V
DS
= – 60
V
,
V
GS
= 0
V
,
T
J
= 85 °C
V
GS
= – 10
V
,
V
DS
= – 4.5 V
V
GS
= – 10
V
,
V
DS
= – 10 V
V
GS
= – 4.5
V
,
I
D
= – 25 mA
V
GS
= – 10
V
,
I
D
= – 100 mA
Zero Gate Voltage Drain Current
On-State Drain Current
a
I
DSS
V
– 50
I
D(on)
mA
– 600
4
3
9
Drain-Source On-Resistance
a
R
DS(on)
V
GS
= – 10
V
,
I
D
= – 100 mA, T
J
=125 °C
Forward
T
r
ansconductance
a
Diode Forward Voltage
Dynamic
g
fs
V
DS
= – 10
V
,
I
D
= – 100 mA
80
mS
V
V
SD
I
S
= – 100 mA, V
GS
= 0 V
– 1.4
T
o
tal Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse
T
r
ansfer Capacitance
Switching
b
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
2.0
1.2
0.8
23
10
5
V
DS
= – 30
V
,
V
GS
= – 15 V
nC
pF
I
D
– 100 mA
V
DS
= – 25
V
,
V
GS
= 0 V
f = 1 MHz
T
u
rn-On Time
t
d(on)
t
d(off)
20
35
V
DD
= – 25
V
,
R
L
= 150
I
D
– 200 mA, V
GEN
= – 10
V
,
R
g
= 10
ns
T
u
rn-Off Time
Notes:
a. Pulse test: P
W
300 µs duty cycle
2 %.
b. Switching time is essentially independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
服务热线：400-655-8788
2
2SJ210-T1B-A
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
1.0
1200
900
600
300
0
V
= 10
V
GS
T =
– 55 °C
J
5
V
0.
8
0.6
0.4
0.2
0.0
V
6
25 °C
125 °C
4
V
3
V
2
V
0
1
2
3
4
5
0
2
4
6
8
10
V
– Drain-to-So
u
rce
V
oltage (
V
)
V
– Gate-to-So
u
rce
V
oltage (
V
)
DS
GS
Output Characteristics
Transfer Characteristics
40
32
24
16
8
15
12
9
V
= 0
V
GS
V
= 4.5
V
GS
C
iss
V
= 5
V
GS
6
3
C
oss
V
= 10
V
GS
C
rss
0
0
0
5
10
15
20
25
0
200
400
600
8
00
1000
I
D
– Drain C
u
rrent (mA)
V
– Drain-to-So
u
rce
V
oltage (
V
)
DS
On-Resistance vs. Drain Current
Capacitance
15
12
9
1.
8
1.5
1.2
0.9
0.6
0.3
0.0
I
D
= 500 mA
V
= 30
V
V
= 10
V
at 500 mA
DS
GS
V
= 4
8 V
DS
V
= 4.5
V
at 25 mA
GS
6
3
0
0.0
0.3
0.6
0.9
1.2
1.5
1.
8
– 50
– 25
0
25
T –
J
u
nction
T
e
mperat
u
re (°C)
J
50
75
100 125 150
Q
g
–
T
o
tal Gate Charge (nC)
On-Resistance vs. Junction Temperature
Gate Charge
服务热线：400-655-8788
3
2SJ210-T1B-A
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
10
1000
V
= 0
V
GS
8
I
D
= 500 mA
100
6
T
J
= 125 °C
4
I
D
= 200 mA
10
1
T
= 25 °C
J
2
T
= – 55 °C
J
0
0
2
4
6
8
10
0.00
0.3
0.6
0.9
1.2
1.5
V
– Gate-to-So
u
rce
V
oltage (
V
)
V
– So
u
rce-to-Drain
V
oltage (
V
)
GS
SD
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-Source Voltage
0.5
0.4
3
2.5
I
D
= 250
µ
A
0.3
2
0.2
1.5
0.1
– 0.0
– 0.1
– 0.2
– 0.3
1
0.5
0
T
A
= 25 °C
– 50
– 25
0
25
50
75
100 125 150
0.01
0.1
1
10
100
600
T
J
– J
u
nction
T
e
mperat
u
re (°C)
Time (s)
Threshold Voltage Variance Over Temperature
Single Pulse Power, Junction-to-Ambient
2
1
D
u
ty Cycle = 0.5
0.2
N
otes:
0.1
0.1
P
DM
0.05
t
1
t
2
t
t
1
2
0.02
1. D
u
ty Cycle, D =
2. Per Unit Base = R
= 350 °C/W
thJA
(t)
Z
3. T
– T
= P
DM thJA
JM
A
Single P
u
lse
4. S
u
rface Mo
u
nted
0.01
-4
-3
-2
-1
10
10
10
10
Sq
u
are Wa
v
e P
u
lse D
u
ration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
10
100
600
服务热线：400-655-8788
4
2SJ210-T1B-A
SOT-23 (TO-236): 3-LEAD
b
3
E
1
E
1
2
e
S
e
1
D
0.10 mm
0.004″
C
C
0.25 mm
q
A
2
A
G
au
ge Pl
a
ne
S
e
a
ting Pl
a
ne
S
e
a
ting Pl
a
ne
C
A
1
L
1
L
MILLIMETERS
INCHES
Dim
Min
0.89
0.01
Max
1.12
0.10
Min
0.0
3
5
0.0004
Max
0.044
0.004
A
A
1
A
2
0.88
0.
3
5
0.085
2.80
2.10
1.20
1.02
0.50
0.18
3
.04
2.64
1.40
0.0
3
46
0.014
0.00
3
0.110
0.08
3
0.047
0.040
0.020
0.007
0.120
0.104
0.055
b
c
D
E
E
1
e
0.95 BSC
1.90 BSC
0.0
3
74 Ref
e
1
0.0748 Ref
L
0.40
0.60
8°
0.016
0.024
8°
L
1
0.64 Ref
0.50 Ref
0.025 Ref
0.020 Ref
S
q
3
°
3
°
ECN: S-0
3
946-Rev. K, 09-Jul-01
DWG: 5479
服务热线：400-655-8788
5
2SJ210-T1B-A
RECOMMENDED MINIMUM
P
A
DS FOR SO
T
–
23
0.037
0.022
(0.950)
(0.559)
0.053
(1.341)
0.097
(2.459)
Recommended Minimum Pads
Dimensions in Inches/(mm)
服务热线：400-655-8788
6
2SJ210-T1B-A
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T
aiwan VBsemi”), assumes no responsibility for any errors, inaccuracies or
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any goods or continuous production.
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o
t
he maximum extent permitted by applicable law on
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aiwan VBsemi
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T
aiwan demand that the Taiwan VBsemi of. Statement on whether the
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product features in the products described in the specification is appropriate for use in a particular application.
Parameter data sheets and technical specifications can be provided may vary depending on the application and
performance over time. All operating parameters, including typical parameters must be made by customer’s
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aiwan
VBsemi purchasing terms and conditions, including but not limited to warranty herein.
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aiwan VBsemi products are not intended for use in medical, life saving,
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oHS compliant and meets the definition of restrictions under Directive of the European Parliament
2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and
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