VBsemi-Elec-2SJ505S-VB
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2SJ505S
P-Channel 60-V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
•
•
•
TrenchFET
®
Power MOSFET
Package with Low Thermal Resistance
100 % R
g
Tested
I
D
(A)
d
V
DS
(V)
R
DS(on)
(
Ω
)
A
v
aila
b
le
0.00
65
at V
GS
= – 10 V
0.0
085
at V
GS
= – 4.5 V
RoHS*
– 60
– 110
COMPLIANT
S
TO-263
G
G
D S
Top View
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
T =
25 °C, unless otherwise noted
C
Parameter
Symbol
Limit
– 60
20
Unit
V
DS
Drain-Source Voltage
Gate-Source Voltage
V
V
GS
Continuous Drain Current
d
(T
J
= 175 °C)
T
C
= 25 °C
– 110
– 75
I
D
T
C
= 125 °C
A
I
DM
I
AS
Pulsed Drain Current
Avalanche Current
– 200
– 85
L = 0.1 mH
Single Pulse Avalanche Energy
d
E
AS
211
mJ
W
272
c
T
C
= 25 °C
T
A
= 25 °C
b
P
D
Maximum Power Dissipation
3.75
b
T
J
, T
stg
Operating Junction and Storage
T
e
mperature Range
– 55 to 175
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limit
40
Unit
Junction-to-Ambient
Junction-to-Case
PCB Mount
d
R
thJA
°C/W
R
thJC
0.55
Notes:
a. Duty cycle
≤
1 %.
b. When Mounted on 1″ square PCB (FR-4 material).
c. See SOA curve for voltage derating.
d. Limited by Package.
* Pb containing terminations are not RoHS compliant, exemptions may appl
y
.
服务热线：400-655-8788
1
2SJ505S
SPECIFICATIONS
T =
25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
V
(BR)DSS
V
GS(th)
I
GSS
V
GS
= 0
V
,
I
D
= – 250 µA
V
DS
= V
GS
, I
D
= – 250 µA
Drain-Source Breakdown Voltage
– 60
– 1
V
Gate-Threshold Voltage
Gate-Body Leakage
– 3
100
– 1
V
DS
= 0
V
,
V
GS
=
20 V
nA
V
DS
= – 60
V
,
V
GS
= 0 V
DS
= – 60
V
,
V
GS
= 0
V
,
T
J
= 125 °C
DS
= – 60
V
,
V
GS
= 0
V
,
T
J
= 175 °C
V
DS
= – 5
V
,
V
GS
= – 10 V
I
DSS
V
V
Zero Gate Voltage Drain Current
On-State Drain Current
a
– 50
– 250
µA
A
I
D(on)
– 120
V
GS
= – 10
V
,
I
D
= – 30 A
0.0065
0.0129
0.016
V
GS
= – 10
V
,
I
D
= – 30 A, T
J
= 125 °C
GS
= – 10
V
,
I
D
= – 30 A, T
J
= 175 °C
GS
= – 4.5
V
,
I
D
= – 20 A
V
DS
= – 15
V
,
I
D
= – 50 A
Drain-Source On-State Resistance
a
Forward
T
r
ansconductance
a
R
DS(on)
Ω
V
V
0.0085
g
fs
20
S
Dynamic
b
C
iss
C
oss
C
rss
Q
g
Input Capacitance
Output Capacitance
Reverse
T
r
ansfer Capacitance
9200
975
760
160
40
V
GS
= 0
V
,
V
DS
= – 25
V
, f = 1
M
Hz
pF
T
o
tal Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
240
Q
gs
Q
gd
R
g
V
DS
= – 30
V
,
V
GS
= – 10
V
,
I
D
= – 110 A
f = 1 MHz
nC
36
Gate Resistance
1.5
3
4.5
30
Ω
T
u
rn-On Delay Time
c
Rise Time
c
T
u
rn-Off Delay Time
c
t
d(on)
t
r
t
d(off)
t
f
20
190
140
300
285
210
450
V
DD
= – 30
V
,
R
L
= 0.27
Ω
I
D
≅
– 110 A, V
GEN
= – 10
V
,
R
G
= 2.5
Ω
ns
Fall Time
c
Source-Drain Diode Ratings and Characteristics
T
C
= 25 °C
b
I
S
I
SM
Continuous Current
Pulsed Current
– 110
– 200
– 1.5
90
A
Forward Voltage
a
V
SD
t
rr
I
F
= – 50 A, V
GS
= 0 V
– 1.0
60
V
ns
A
Reverse Recovery Time
Peak Reverse Recovery Charge
Reverse Recovery Charge
I
RM(REC)
Q
rr
I
F
= – 50 A, di/dt = 100 A/µs
– 3
– 4.5
0.2
0.09
µC
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
服务热线：400-655-8788
2
2SJ505S
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
200
200
160
120
8
0
V
GS
= 10 thr
u
5
V
160
120
8
0
40
0
4
V
T
= 125 °C
C
40
25 °C
3
V
– 55 °C
0
0
2
4
6
8
10
0
1
2
3
4
5
6
V
DS
− Drain-to-So
u
rce
V
oltage (
V
)
V
GS
− Gate-to-So
u
rce
V
oltage (
V
)
Output Characteristics
Transfer Characteristics
0.020
0.016
0.012
0.00
8
0.004
0.000
200
160
120
8
0
T
= – 55 °C
C
25 °C
125 °C
V
GS
= 4.5
V
V
GS
= 10
V
40
0
0
20
40
60
8
0
100
120
0
10
20
30
40
50
60
70
8
0
I
D
− Drain C
u
rrent (A)
I
D
− Drain
C
u
rrent (A)
Transconductance
On-Resistance vs. Drain Current
15000
12000
9000
6000
3000
0
20
16
12
8
V
D
= 30
V
DS
= 110 A
I
C
iss
4
C
oss
C
rss
0
0
10
20
30
40
50
60
0
40
8
0
120 160 200 240 2
8
0 320
V
DS
− Drain-to-So
u
rce
V
oltage (
V
)
Q
−
T
o
tal
Gate Charge (nC)
g
Gate Charge
Capacitance
服务热线：400-655-8788
3
2SJ505S
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
10
1
2.0
V
D
= 10
V
GS
= 30 A
I
1.7
1.4
1.1
0.
8
0.5
T =
150 °C
J
T =
25 °C
J
0.0
0.3
0.6
0.9
1.2
– 50
– 25
0
25
50
75 100
125 150 175
V
SD
− So
u
rce-to-Drain
V
oltage (
V
)
T
− J
u
nction
T
e
mperat
u
re (°C)
J
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
1000
76
72
6
8
64
60
56
I
D
= 250
µ
A
100
10
1
I
A
V
(A) at T
= 25 °C
A
I
A
V
(A) at T
= 150 °C
A
0.1
– 50
– 25
0
25
50
75 100
125 150 175
0.00001 0.0001
0.001
0.01
0.1
1
t
in
(s)
T
− J
u
nction
T
e
mperat
u
re (°C)
J
Avalanche Current vs. Time
Drain Source Breakdown vs.
Junction Temperature
服务热线：400-655-8788
4
2SJ505S
THERMAL RATINGS
1000
200
Limited
b
y r
*
DS(on)
10
µ
s
150
100
100
10
100
µ
s
1 ms
Package Limited
10 ms
100 ms, DC
1
50
0
T
= 25 °C
C
Single P
u
lse
0.1
0.1
1
10
100
0
25
50
75
100
125
150
175
V
− Drain-to-So
u
rce
V
oltage (
V
)
DS
T
− Case
T
e
mperat
u
re (°C)
C
*
V
GS
minim
u
m
V
at
w
hich r
is specified
GS
DS(on)
Maximum Avalanche and Drain Current
vs. Case Temperature
Safe Operating Area
2
D
u
ty Cycle = 0.5
1
0.2
N
otes:
P
DM
0.1
0.1
0.05
0.02
t
1
t
2
t
t
1
1. D
u
ty Cycle, D =
2
Single P
u
lse
2. Per Unit Base = R
= 62.5 °C/
W
thJA
(t)
3. T
− T
= P
JM
Z
A
DM thJA
4. S
u
rface Mo
u
nted
0.01
-3
-2
-4
10
10
S
qu
are
W
a
v
e P
u
lse D
u
ration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
1
10
-1
10
服务热线：400-655-8788
5
2SJ505S
2
RECOMMENDED MINIMUM PADS FOR D PAK:
3-Lead
0.420
(10.668)
0.145
(3.683)
0.135
(3.429)
0.200
0.050
(5.080)
(1.257)
Recommended Minimum Pads
Dimensions in Inches/(mm)
服务热线：400-655-8788
6
2SJ505S
Disclaimer
All products due to improve reliability, function or design or for other reasons, product specifications and
data are subject to change without notice.
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representatives (collectively, the “
T
aiwan VBsemi”), assumes no responsibility for any errors, inaccuracies or
incomplete data contained in the table or any other any disclosure of any information related to the
product.(www.VBsemi.com)
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any goods or continuous production.
T
o
t
he maximum extent permitted by applicable law on
T
aiwan VBsemi
relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability,
including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties,
including a particular purpose, non-infringement and merchantability guarantee.
Statement on certain types of applications are based on knowledge of the product is often used in a typical
application of the general product VBsemi
T
aiwan demand that the Taiwan VBsemi of. Statement on whether the
product is suitable for a particular application is non-binding. It is the customer’s responsibility to verify specific
product features in the products described in the specification is appropriate for use in a particular application.
Parameter data sheets and technical specifications can be provided may vary depending on the application and
performance over time. All operating parameters, including typical parameters must be made by customer’s
technical experts validated for each customer application. Product specifications do not expand or modify
T
aiwan
VBsemi purchasing terms and conditions, including but not limited to warranty herein.
Unless expressly stated in writing,
T
aiwan VBsemi products are not intended for use in medical, life saving,
or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal
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T
aiwan VBsemi such applications using client did not express their
own risk. Contact your authorized
T
aiwan VBsemi people who are related to product design applications and
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Material Category Policy
Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be
oHS compliant and meets the definition of restrictions under Directive of the European Parliament
2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and
electronic equipment (EEE) – modification, unless otherwise specified as inconsistent.(www.VBsemi.com)
Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We
confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive
2011/65 /.
Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as
halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese
VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products
conform to confirm compliance with IEC 61249-2-21 standard level JS709A.
