VBsemi-Elec-2SK2963-VB
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2SK2963
N-Channel 100 V (D-S) MOSFET
FEATURES
•
MOSFET PRODUCT SUMMARY
TrenchFET
®
Power MOSFET
I
D
(A)
a
V
DS
(V)
R
DS(on)
(
) Typ.
0.102 at V
GS
= 10 V
0.1
2
0 at V
GS
= 6 V
0.1
2
5 at V
GS
= 4.5 V
Q
g
(Typ.)
•
100 % R
and UIS Tested
g
4.2
100
3.8
2.9 nC
3.6
APPLICATIONS
•
•
•
•
DC/DC Converters / Boost Converters
Load Switch
LED Backlighting in LCD TVs
Power Management for Mobile Computing
D
D
G
S
G
D
S
N
-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(T =
25 °C, unless otherwise noted)
A
Parameter
Symbol
Limit
100
Unit
V
DS
Drain-Source Voltage
Gate-Source Voltage
V
V
GS
± 20
4.2
T
C
= 25 °C
T
C
= 70 °C
A
= 25 °C
3.5
I
D
Continuous Drain Current (T
J
= 150 °C)
3.2
b,c
2.8
b,c
15
T
T
A
= 70 °C
A
I
DM
I
S
Pulsed Drain Current (t = 300 µs)
T
C
= 25 °C
A
= 25 °C
2.1
1
b, c
Continuous Source-Drain Diode Current
T
I
AS
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
3
L = 0.1 mH
E
AS
mJ
W
0.45
2.5
T
C
= 25 °C
T
C
= 70 °C
1.6
P
D
Maximum Power Dissipation
1.25
b, c
0.8
b, c
– 55 to 150
T
A
= 25 °C
T
A
= 70 °C
T
J
, T
stg
Operating Junction and Storage
T
e
mperature Range
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
R
thJA
Typical
75
Maximum
Unit
Maximum Junction-to-Ambient
b, d
Maximum Junction-to-Foot (Drain)
5 s
Steady State
100
50
°C/W
R
thJF
40
Notes:
a. Based on T
C
= 25 °C.
b. Surface mounted on 1″ x 1″ FR4 board.
c. t
= 5 s.
d. Maximum
under steady state conditions is 166 °C/W.
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1
2SK2963
MOSFET SPECIFICATIONS
(T =
25 °C, unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
V
DS
V
GS
= 0
V
,
I
D
= 250 µA
I
D
= 250 µA
Drain-Source Breakdown Voltage
V
DS
T
e
mperature Coefficient
100
V
V
DS
/T
J
59
mV/°C
V
GS(th)
T
e
mperature Coefficient
V
/T
– 4.8
GS(th) J
V
GS(th)
I
GSS
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0
V
,
V
GS
= ± 20 V
V
DS
= 100
V
,
V
GS
= 0 V
DS
= 100
V
,
V
GS
= 0
V
,
T
J
= 55 °C
V
DS
5
V
,
V
GS
= 10 V
V
GS
= 10
V
,
I
D
= 2 A
Gate-Source Threshold Voltage
Gate-Source Leakage
1.2
3
V
± 100
– 1
nA
I
DSS
Zero Gate Voltage Drain Current
On-State Drain Current
a
µA
A
V
– 10
I
D(on)
5
0.1
0
2
0.120
0.125
5
Drain-Source On-State Resistance
a
Forward
T
r
ansconductance
a
R
DS(on)
V
GS
= 6
V
,
I
D
= 1 A
V
GS
= 4.5
V
,
I
D
= 1 A
g
fs
V
DS
= 20
V
,
I
D
= 2 A
S
Dynamic
b
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse
T
r
ansfer Capacitance
196
67
14
5.2
2.9
1
V
DS
= 50
V
,
V
GS
= 0
V
, f = 1
M
Hz
pF
V
DS
= 50
V
,
V
GS
= 10
V
,
I
D
= 2.2 A
10.4
5.8
Q
g
T
o
tal Gate Charge
nC
Q
gs
Q
gd
R
g
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
T
u
rn-On Delay Time
Rise Time
V
DS
= 50
V
,
V
GS
= 4.5
V
,
I
D
= 2.2 A
f = 1 MHz
1.4
4.3
40
68
14
20
8
0.9
8.6
60
102
21
30
16
20
20
14
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 50
V
,
R
L
= 27.7
I
D
= 1.8 A, V
GEN
= 4.5
V
,
R
g
= 1
T
u
rn-Off Delay Time
Fall Time
ns
T
u
rn-On Delay Time
Rise Time
10
10
7
V
DD
= 50
V
,
R
L
= 27.7
I
D
= 1.8 A, V
GEN
= 10
V
,
R
g
= 1
T
u
rn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
I
S
I
SM
V
SD
t
rr
T
C
= 25 °C
I
S
= 1.8 A
Continuous Source-Drain Diode Current
– 2.1
– 8
A
Pulse Diode Forward Current
a
Body Diode Voltage
– 0.8
23
21
17
6
– 1.2
35
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ns
nC
Q
rr
t
a
32
I
F
= 1.8 A, dI/dt = 100 A/µs,
T
J
= 25 °C
ns
t
b
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
服务热线：400-655-8788
2
2SK2963
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
1
0.8
0.6
0.4
0.2
0
8
6
4
2
0
V
GS
= 10 V thru 5 V
V
GS
= 4.5 V
V
GS
= 4 V
T
C
= 25
°
C
T
C
= 125
°
C
V
GS
= 3 V
T
C
= – 55
°
C
0
0.5
1
1.5
2
0
1
2
3
4
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
280
210
140
70
0.15
0.13
0.11
0.09
0.07
C
iss
V
GS
= 4.5 V
V
GS
= 6 V
V
GS
= 10 V
C
oss
C
rss
0
0
2
4
6
8
0
20
40
60
80
100
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
2
1.7
1.4
1.1
0.8
0.5
10
V
GS
= 10 V, 2 A
I
D
= 2.2 A
8
6
4
2
0
V
DS
= 25 V
V
GS
= 4.5 V, 1 A
V
DS
= 80 V
V
GS
= 6 V, 1 A
0
1.5
3
4.5
6
– 50
– 25
0
25
50
75
100 125 150
Q
g
– Total Gate Charge (nC)
T
J
– Junction Temperature (
°
C)
Gate Charge
On-Resistance vs. Junction Temperature
服务热线：400-655-8788
3
2SK2963
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100.0
10.0
1.0
0.35
0.28
0.21
0.14
0.07
0
I
D
= 2 A
T
J
= 125
°
C
T
J
= 150
°
C
T
J
= 25
°
C
T
J
= 25
°
C
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
2
4
6
8
10
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
10
8
2.8
2.5
2.2
1.9
1.6
6
I
D
= 250 μA
4
2
T =
25 °C
A
0
– 50
– 25
0
25
50
75
100 125 150
0.01
0.1
1
10
100
1000
Time (s)
T
J
– Temperature (
°
C)
Threshold Voltage
Single Pulse Power
100
Limited by R
DS(on)
*
10
1
100 μs
1 ms
10 ms
0.1
0.01
100 ms
10 s, 1s
DC
BVDSS Limited
T
A
= 25
°
C
Single Pulse
0.001
0.1
1
10
100
1000
V
DS
– Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area
服务热线：400-655-8788
4
2SK2963
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
3.5
2.8
2.1
1.4
0.7
0
0
25
50
75
100
125
150
T
C
– Case Temperature (
°
C)
Current Derating*
3
2.4
1.8
1.2
0.6
0
1.0
0.8
0.6
0.4
0.2
0.0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
A
– Ambient Temperature (
°
C)
T
C
– Case Temperature (
°
C)
Power, Junction-to-Foot
Power, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max.)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
服务热线：400-655-8788
5
2SK2963
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
1
D
u
ty Cycle = 0.5
0.2
0.1
0.1
N
otes:
P
DM
0.05
t
1
0.02
t
2
t
t
1
2
1. D
u
ty Cycle, D =
2. Per Unit Base = R
= 166 °C/
W
thJA
(t)
= P
Z
3. T
– T
A
DM thJA
JM
4. S
u
rface Mo
u
nted
Single P
u
lse
0.01
-4
-3
-2
-1
10
10
10
10
1
100
1000
10
S
qu
are
W
a
v
e P
u
lse D
u
ration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
D
u
ty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single P
u
lse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
S
qu
are
W
a
v
e P
u
lse D
u
ration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
服务热线：400-655-8788
6
2SK2963
Package outline – SOT89
D
A
C
D1
E
E1
H
L
B
e
B1
e1
DIM
Millimeters
Inches
DIM
Millimeters
Inches
Min
Max
1.60
0.56
0.48
0.44
4.60
1.83
Min
Max
Min
Max
2.60
2.29
Min
Max
0.102
0.090
A
B
1.40
0.44
0.36
0.35
4.40
1.62
0.550
0.017
0.014
0.014
0.173
0.064
0.630
0.022
0.019
0.017
0.181
0.072
E
E1
e
2.29
2.13
0.090
0.084
B1
C
1.50 BSC
3.00 BSC
0.059 BSC
0.118 BSC
e1
H
D
3.94
0.89
4.25
1.20
0.155
0.035
0.167
0.047
D1
L
Note:
Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
服务热线：400-655-8788
7
2SK2963
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data are subject to change without notice.
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T
aiwan VBsemi”), assumes no responsibility for any errors, inaccuracies or
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o
t
he maximum extent permitted by applicable law on
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aiwan VBsemi
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application of the general product VBsemi
T
aiwan demand that the Taiwan VBsemi of. Statement on whether the
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Parameter data sheets and technical specifications can be provided may vary depending on the application and
performance over time. All operating parameters, including typical parameters must be made by customer’s
technical experts validated for each customer application. Product specifications do not expand or modify
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aiwan
VBsemi purchasing terms and conditions, including but not limited to warranty herein.
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aiwan VBsemi products are not intended for use in medical, life saving,
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