VBsemi-Elec-2SK3706-VB
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2SK3706
N-Channel 100-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
V
DS
(V)
• Isolated
Package
100
• High Voltage Isolation = 2.5 kV
RMS
(t = 60 s;
f = 60 Hz)
• Sink
to Lead Creepage Distance = 4.8 mm
• 175
°C Operating Temperature
• Dynamic
dV/dt Rating
R
DS(on)
(
Ω
)
Q
g
(Max.) (nC)
V
GS
= 10 V
0.086
RoHS
72
11
COMPLIANT
Q
Q
gs
(nC)
gd
(nC)
32
• Low
Thermal Resistance
• Lead
(Pb)-free Available
Configuration
Single
D
TO-220 FULLPAK
G
S
S
D
G
N
-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
T
C
= 25 °C, unless otherwise noted
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
Gate-Source Voltage
V
DS
100
V
V
GS
20
T
C
= 25 °C
18
Continuous Drain Current
V
GS
at 10 V
I
D
T
C
=
1
0
0
°
C
12
A
Pulsed Drain Current
a
I
DM
68
0.32
720
Linear Derating Factor
W/°C
mJ
A
Single Pulse Avalanche Energy
b
Repetitive Avalanche Current
a
Repetitive Avalanche Energy
a
E
AS
I
AR
17
E
AR
4.8
mJ
W
Maximum Power Dissipation
T
C
= 25 °C
P
D
48
Peak Diode Recovery dV/dt
c
dV/dt
T
J
, T
stg
5.5
V/ns
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
– 55 to + 175
300
d
10
°C
for 10 s
lbf · in
N · m
Mounting Torque
6-32 or M3 screw
1.1
Notes
a. Repetitive
rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= 25 V, starting T
J
= 25 °C, L = 3.7 mH, R
G
= 25
Ω
, I
AS
= 17 A (see fig. 12).
c. I
SD
≤
17 A, dI/dt
≤
200 A/µs, V
DD
≤
V
DS
, T
J
≤
175 °C.
d. 1.6
mm from case.
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1
2SK3706
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
65
UNIT
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
R
thJA
R
thJC
–
–
°C/W
3.1
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
V
DS
Δ
V
DS
/T
J
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= 250 µA
Reference to 25 °C, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 250 µA
100
–
–
V
V/°C
V
–
0.13
–
1.0
–
–
–
–
3.0
100
25
250
V
GS
V
DS
= 100 V, V
GS
= 0 V
DS
= 80 V, V
GS
= 0 V, T
J
= 150 °C
V
GS
= 10 V
I
D
= 10 A
b
=
20 V
–
–
–
nA
Zero Gate Voltage Drain Current
I
DSS
µA
V
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
R
DS(on)
g
fs
Ω
–
0.086
–
–
–
V
DS
= 50 V, I
D
= 10 A
b
9.1
S
Input Capacitance
C
iss
C
oss
C
rss
C
–
–
–
–
–
–
–
–
–
–
–
1700
560
120
12
–
–
–
V
GS
= 0 V,
V
DS
= 25 V,
f = 1.0 MHz, see fig. 5
Output Capacitance
Reverse Transfer Capacitance
Drain to Sink Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
pF
nC
ns
–
f = 1.0 MHz
–
Q
g
72
11
32
–
I
D
= 17 A, V
DS
= 80 V,
Q
gs
Q
gd
t
d(on)
t
r
V
GS
= 10 V
–
see fig. 6 and 13
b
–
11
44
53
43
V
DD
= 50 V, I
D
= 17 A,
R
G
= 9.1
Ω
,
R
D
= 2.9
Ω
,
see fig. 10
b
–
Turn-Off Delay Time
Fall Time
t
d(off)
t
f
–
–
D
Between lead,
Internal Drain Inductance
Internal Source Inductance
L
D
L
S
–
–
4.5
7.5
–
–
6 mm (0.25″) from
package and center of
die contact
nH
G
S
Drain-Source Body Diode Characteristics
MOSFET symbol
showing the
integral reverse
p – n junction diode
D
Continuous Source-Drain Diode Current
I
S
–
–
–
–
17
68
A
G
Pulsed Diode Forward Current
a
I
SM
S
Body Diode Voltage
V
SD
t
rr
T
J
= 25 °C, I
S
= 17 A, V
GS
= 0 V
b
–
–
–
–
2.5
360
2.6
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
180
1.3
ns
µC
T
J
= 25 °C, I
F
= 17 A, dI/dt = 100 A/µs
b
Q
rr
t
on
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
Notes
a. Repetitive
rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse
width
≤
300 µs; duty cycle
≤
2 %.
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2SK3706
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
Fig. 1 – Typical Output Characteristics, T
C
= 25 °C
Fig. 3 – Typical Transfer Characteristics
Fig. 2 – Typical Output Characteristics, T
C
= 175 °C
Fig. 4 – Normalized On-Resistance vs. Temperature
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3
2SK3706
Fig. 7 – Typical Source-Drain Diode Forward Voltage
Fig. 5 – Typical Capacitance vs. Drain-to-Source Voltage
Fig. 8 – Maximum Safe Operating Area
Fig. 6 – Typical Gate Charge vs. Gate-to-Source Voltage
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2SK3706
R
D
V
DS
V
GS
D.U.T.
R
G
+
V
–
DD
10
V
P
u
lse
w
idth
≤
1
µ
s
D
u
ty factor
≤
0.1
%
Fig. 10a – Switching Time Test Circuit
V
DS
90
%
10
%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig. 9 – Maximum Drain Current vs. Case Temperature
Fig. 10b – Switching Time Waveforms
Fig. 11 – Maximum Effective Transient Thermal Impedance, Junction-to-Case
L
V
DS
V
DS
V
ary t
p
to o
b
tain
re
qu
ired I
AS
t
p
V
DD
D.U.T
R
G
+
–
V
DD
V
DS
I
AS
10
V
0.01
Ω
Fig. 12a – Unclamped Inductive Test Circuit
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t
p
I
AS
Fig. 12b – Unclamped Inductive Waveforms
5
2SK3706
Fig. 12c – Maximum Avalanche Energy vs. Drain Current
C
u
rrent reg
u
lator
Same type as D.U.T.
50 k
Ω
Q
G
10
V
12
V
0.2
µ
F
0.3
µ
F
Q
GS
Q
GD
+
V
DS
D.U.T.
–
V
G
V
GS
3 mA
Charge
I
G
I
D
C
u
rrent sampling resistors
Fig. 13b – Gate Charge Test Circuit
Fig. 13a – Basic Gate Charge Waveform
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6
2SK3706
Peak Diode Recovery dV/dt Test Circuit
+
Circ
u
it layo
u
t considerations
•
Lo
w
stray ind
u
ctance
•
Gro
u
nd plane
D.U.T.
•
Lo
w
leakage ind
u
ctance
c
u
rrent transformer
–
+
–
–
+
R
G
•
d
V
/dt controlled
b
y R
G
+
–
•
Dri
v
er same type as D.U.T.
•
I
SD
controlled
b
y d
u
ty factor “D”
•
D.U.T. – de
v
ice
u
nder test
V
DD
Dri
v
er gate dri
v
e
P.
W
.
P.
W
.
Period
Period
D =
V
= 10
V
*
GS
D.U.T. I
w
a
v
eform
SD
Re
v
erse
reco
v
ery
c
u
rrent
Body diode for
w
ard
c
u
rrent
dI/dt
D.U.T.
V w
a
v
eform
DS
Diode reco
v
ery
d
V
/dt
V
DD
Re-applied
v
oltage
Body diode for
w
ard drop
Ripple
≤
5
%
Ind
u
ctor c
u
rrent
I
SD
*
V
GS
= 5
V
for logic le
v
el de
v
ices
Fig.14 – For N-Channel
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7
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