VBsemi-Elec-AM70P03-07D-T1-PF-VB
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AM70P03-07D-T1-PF
P-Channel 30 V (D-S)
MOSFET
FEATURES
Compliant to RoHS Directiv
e
2
002/95/EC
PRODUCT SUMMARY
•
V
DS
(V)
I
D
(A)
a
-60
R
DS(on)
(
)
Available
0.009 at V
GS
= – 10 V
RoHS*
– 30
COMPLIANT
-58
0.01
1
at V
GS
= – 4.5 V
S
TO-252
G
D
G
S
D
Top View
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(T =
25 °C, unless otherwise noted)
C
Parameter
Symbol
Limit
Unit
V
GS
Gate-Source Voltage
± 20
V
– 70
a
T
C
= 25 °C
Continuous Drain Current (T
J
= 175 °C)
I
D
T
C
= 125 °C
– 58
A
I
DM
I
AR
Pulsed Drain Current
– 240
Avalanche Current
Repetitive Avalanche Energy
b
– 60
180
E
AR
L = 0.1 mH
T
C
= 25 °C
T
A
= 25 °C
mJ
W
87
d
Power Dissipation
P
D
78
T
J
, T
stg
Operating Junction and Storage Temperature Range
– 55 to 175
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
R
thJA
Limit
60
Unit
PCB Mount
Free Air
Junction-to-Ambient
68.5
1.0
°C/W
R
thJC
Junction-to-Case
Notes:
a.
Package limited.
b.
Duty cycle
1 %.
c.
When mounted on 1″ square PCB (FR-4 material).
d.
See SOA curve for voltage derating.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
服务热线：400-655-8788
1
AM70P03-07D-T1-PF
SPECIFICATIONS
(T =
25 °C, unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V
DS
V
GS(th)
I
GSS
– 30
– 1
V
GS
= 0 V, I
D
= – 250 µA
V
DS
= V
GS
, I
D
= – 250 µA
V
– 3
± 100
– 1
nA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= – 30 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
On-State Drain Current
a
I
DSS
– 50
– 250
µA
A
V
DS
= – 30 V, V
GS
= 0 V, T
J
= 125 °C
V
DS
= – 30 V, V
GS
= 0 V, T
J
= 175 °C
V
DS
= – 5 V, V
GS
= – 10 V
I
D(on)
– 120
0.009
0.012
0.013
0.011
V
GS
= – 10 V, I
D
= – 30 A
V
GS
= – 10 V, I
D
= – 30 A, T
J
= 125 °C
V
GS
= – 10 V, I
D
= – 30 A, T
J
= 175 °C
V
GS
= – 4.5 V, I
D
= – 20 A
Drain-Source On-State Resistance
a
R
DS(on)
Forward Transconductance
a
Dynamic
b
g
fs
20
S
V
DS
= – 15 V, I
D
= – 75 A
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reversen Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Turn-On Delay Time
c
Rise Time
c
4000
1565
715
160
32
V
GS
= 0 V, V
DS
= – 25 V, f = 1 MHz
V
DS
= – 15 V, V
GS
= – 10 V, I
D
= – 75 A
pF
nC
240
Q
g
Q
gs
Q
gd
30
t
d(on)
25
40
225
150
210
360
240
340
t
r
V
DD
= – 15 V, R
L
= 0.2
ns
Turn-Off Delay Time
c
Fall Time
c
I
D
– 75 A, V
GEN
= – 10 V, R
g
= 2.5
t
d(off)
t
f
Source-Drain Diode Ratings and Characteristics
b
(T
C
= 25 °C)
Continuous Current
– 70
– 240
– 1.5
100
5
I
S
A
I
SM
Pulsed Current
Forward Voltage
a
V
SD
– 1.2
55
V
ns
A
I
F
= – 75 A, V
GS
= 0 V
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
t
rr
I
RM(REC)
Q
rr
I
F
= – 75 A, dI/dt = 100 A/µs
2.5
0.07
0.25
µC
Notes:
a.
Pulse test; pulse width
300 µs, duty cycle
2 %.
b.
Guaranteed by design, not subject to production testing.
c.
Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
服务热线：400-655-8788
2
AM70P03-07D-T1-PF
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
200
160
120
80
250
T
C
= – 55 °C
V
GS
= 10 V thru 6 V
25 °C
200
125 °C
5 V
150
100
4 V
40
50
3 V
0
0
0
1
2
3
4
5
6
0
2
4
6
8
10
V
GS
– Gate-to-Source Voltage (V)
V
DS
– Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.036
150
T
C
= – 55 °C
0.030
0.024
0.018
0.012
0.006
0
120
90
60
30
0
25 °C
125 °C
V
GS
= 4.5 V
V
V
GS
= 10
0
20
40
60
80
100
120
0
20
40
60
80
100
I
D
– Drain Current (A)
I
D
– Drain
Current (A)
Transconductance
On-Resistance vs. Drain Current
20
16
12
8
12 000
10 000
8000
6000
4000
2000
0
V
DS
= 15 V
I
D
= 75 A
C
iss
C
oss
4
C
rss
0
0
50
100
150
200
250
300
0
6
12
18
24
30
Q
g
– Total Gate Charge (nC)
V
DS
– Drain-to-Source Voltage (V)
Capacitance
Gate Charge
服务热线：400-655-8788
3
AM70P03-07D-T1-PF
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
1.8
100
10
1
V
GS
= 10 V
I
D
= 30 A
1.5
1.2
0.9
0.6
0.3
0
T
J
= 150 °C
T
J
= 25 °C
– 50
– 25
0
25
50
75 100 125 150 175
0
0.2
0.4
0.6
0.8
1.0
T
J
– Junction Temperature (°C)
V
SD
– Source-to-Drain Voltage (V)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
1000
100
10
45
40
35
30
25
I
D
= 250 µA
I
AV
(A) at T
A
= 25 °C
I
AV
(A) at T
A
= 150 °C
1
0.1
– 50
– 25
0
25
50
75 100 125 150
175
0.00001
0.0001
0.001
t
in
(s)
0.01
0.1
1
T
J
– Junction Temperatur
e
(
°C)
Avalanche Current vs. Time
Drain Source Breakdown
vs. Junctio
n
T
emperature
服务热线：400-655-8788
4
AM70P03-07D-T1-PF
THERMAL RATINGS
1000
100
90
75
60
45
30
15
0
100 µs
1 ms
Limited
by R
DS(on)
*
10
1
10 ms
100 ms
DC
T
C
= 25 °C
Single Pulse
0.1
0
25
50
75
100
125
150
175
0.1
1
10
100
V
DS
– Drain-to-Source Voltage (V)
T
C
– Case Temperature (°C)
*
V
GS
minimum V
GS
at which R
DS(on)
is specified
Maximum Avalanche and Drain Current
vs. Case Temperature
Safe Operating Area
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
– 3
10
– 2
10
– 1
– 4
1
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
服务热线：400-655-8788
5
AM70P03-07D-T1-PF
TO-252AA CASE OUTLINE
E
A
MILLIMETERS
INCHES
C2
b3
DIM.
A
MIN.
MAX.
2.38
0.127
0.88
1.14
5.46
0.61
0.89
6.22
–
MIN.
MAX.
0.094
0.005
0.035
0.045
0.215
0.024
0.035
0.245
–
2.18
–
0.086
–
A1
b
0.64
0.76
4.95
0.46
0.46
5.97
5.21
6.35
4.32
9.40
0.025
0.030
0.195
0.018
0.018
0.235
0.205
0.250
0.170
0.370
b2
b3
C
C2
D
D1
E
6.73
–
0.265
–
E1
H
b
C
b2
e
10.41
0.410
A1
e1
e
2.28 BSC
4.56 BSC
1.40
0.090 BSC
0.180 BSC
0.055
e1
L
1.78
1.27
1.02
1.52
0.070
0.050
0.040
0.060
L3
L4
L5
0.89
–
0.035
–
1.14
0.045
ECN: X12-0247-Rev. M, 24-Dec-12
DWG: 5347
E1
Note
Dimension L3 is for reference only.
•
服务热线：400-655-8788
6
AM70P03-07D-T1-PF
RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)
0.224
(5.690)
0.180
0.055
(4.572)
(1.397)
Recommended Minimum Pads
Dimensions in Inches/(mm)
服务热线：400-655-8788
7
AM70P03-07D-T1-PF
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product features in the products described in the specification is appropriate for use in a particular application.
Parameter data sheets and technical specifications can be provided may vary depending on the application and
performance over time. All operating parameters, including typical parameters must be made by customer’s
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Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be
RoHS compliant and meets the definition of restrictions under Directive of the European Parliament
2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and
electronic equipment (EEE) – modification, unless otherwise specified as
inconsistent.(www.VBsemi.com)
Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We
confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive
2011/65 /.
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halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese
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