VBsemi-Elec-AO4302-VB
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AO4302
N-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
V
DS
(V)
R
DS(on)
(
Ω
)
I
D
(A)
25
Available
TrenchFET
®
Gen II
Ultra Low On-Resistance Using High
Density TrenchFET Power MOSFET
Technology
0.0030 at
V
GS
= 10 V
0.0040 at
V
GS
= 4.5 V
•
•
30
22
APPLICATIONS
•
Synchronous Buck Low-Side
– Notebook
– Server
D
– Workstation
SO-8
•
Synchronous Rectifier-POL
S
1
2
3
4
8
7
6
5
D
D
S
S
G
D
D
G
S
N-Channel MOSFET
Top View
ABSOLUTE MAXIMUM RATINGS
T =
25 °C, unless otherwise noted
A
Parameter
Symbol
10 s
Steady State
Unit
V
DS
30
Drain-Source Voltage
Gate-Source Voltage
V
V
GS
20
T
A
= 25 °C
T
A
= 70 °C
25
20
17
13
Continuous Drain Current (T
J
= 150 °C)
a
I
D
I
DM
I
S
70
50
A
Pulsed Drain Current (10 µs Pulse Width)
Continuous Source Current (Diode Conduction)
a
Avalanche Current
2.9
1.3
I
AS
T
A
= 25 °C
T
A
= 70 °C
3.5
2.2
1.6
1
Maximum Power Dissipation
a
P
D
W
T
J
, T
stg
– 55 to 150
°C
Operating Junction and Storage
T
e
mperature Range
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
29
Maximum
Unit
t
≤
10 s
35
80
16
Maximum Junction-to-Ambient
a
Maximum Junction-to-Foot (Drain)
R
thJA
Steady State
Steady State
67
°C/W
R
thJF
13
Notes:
a. Surface Mounted on 1″ x 1″ FR4 board.
服务热线：400-655-8788
1
AO4302
SPECIFICATIONS
T =
25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
V
GS(th)
I
GSS
V
DS
= V
GS
, I
D
= 250 µA
Gate Threshold Voltage
1.0
3.0
100
1
V
V
DS
= 0
V
,
V
GS
=
20 V
Gate-Body Leakage
nA
V
DS
= 30
V
,
V
GS
= 0 V
DS
= 30
V
,
V
GS
= 0
V
,
T
J
= 55 °C
V
DS
≥
5
V
,
V
GS
= 10 V
I
DSS
I
D(on)
Zero Gate Voltage Drain Current
µA
A
V
5
On-State Drain Current
a
30
V
GS
= 10
V
,
I
D
= 25 A
0.003
0.004
110
Drain-Source On-State Resistance
a
R
DS(on)
Ω
V
GS
= 4.5
V
,
I
D
= 22 A
Forward
T
r
ansconductance
a
Diode Forward Voltage
a
Dynamic
b
g
fs
V
DS
= 15
V
,
I
D
= 25 A
I
S
= 2.9 A, V
GS
= 0 V
S
V
V
SD
0.72
1.1
70
C
iss
C
oss
C
rss
Q
g
Input Capacitance
Output Capacitance
Reverse
T
r
ansfer Capacitance
T
o
tal Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
6500
930
610
45
V
DS
= 15
V
,
V
GS
= 4.5
V
,
I
D
= 20 A
pF
Q
gs
Q
gd
R
g
V
DS
= 15
V
,
V
GS
= 4.5
V
,
I
D
= 20 A
f = 1.0 MHz
20
nC
16
1.1
27
Ω
t
d(on)
t
r
t
d(off)
t
f
T
u
rn-On Delay Time
Rise Time
40
35
21
V
DD
= 15
V
,
R
L
= 15
Ω
I
D
≅
1 A, V
GEN
= 10
V
,
R
g
= 6
Ω
T
u
rn-Off Delay Time
Fall Time
107
43
160
65
ns
t
rr
I
F
= 2.9 A, dI/dt = 100 A/µs
Source-Drain Reverse Recovery Time
45
70
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
60
50
40
30
20
10
0
60
50
40
30
20
10
0
V
= 10 V thru 4 V
GS
T
= 125 °C
25 °C
C
3 V
– 55 °C
3.5 4.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.0
0.4
0.8
1.2
1.6
2.0
V
– Gate-to-Source Voltage (V)
V
– Drain-to-Source Voltage (V)
GS
DS
Output Characteristics
Transfer Characteristics
服务热线：400-655-8788
2
AO4302
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
0.006
8500
6800
5100
3400
1700
0
C
iss
0.005
V
= 4.5 V
GS
0.004
0.003
0.002
0.001
V
= 10 V
GS
C
oss
C
rss
0
10
20
30
40
50
0
6
12
18
24
30
I
D
– Drain Current (A)
V
– Drain-to-Source Voltage (V)
DS
On-Resistance vs. Drain Current
Capacitance
1.6
1.4
1.2
1.0
0.8
0.6
6
5
4
3
2
1
0
V
= 10 V
= 25
A
GS
V
= 15 V
= 20 A
DS
I
D
I
D
– 50
– 25
0
25
50
75
100 125 150
0
10
20
30
40
50
60
T
J
– Junction Temperature (°C)
Q
g
– Total Gate Charge (nC)
Gate Charge
On-Resistance vs. Junction Temperature
0.015
0.012
0.009
0.006
0.003
0.000
50
10
T =
150 °C
J
I
D
= 25 A
T =
25 °C
J
1
0.1
0
2
4
6
8
10
0
0.2
0.4
0.6
0.8
1.0
1.2
V
– Gate-to-Source Voltage (V)
V
– Source-to-Drain Voltage (V)
GS
SD
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
服务热线：400-655-8788
3
AO4302
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
0.4
60
50
I
D
= 250 µA
0.2
0.0
40
30
20
10
0
– 0.2
– 0.4
– 0.6
– 0.8
– 1.0
-2
-1
– 50
– 25
0
25
50
75
100 125 150
10
10
1
10
100
600
T
–
T
e
mperature (°C)
Time (s)
Single Pulse Power
J
Threshold Voltage
100
Limited by R
DS(on)*
10
10 ms
100 ms
1
1 s
10 s
0.1
T
= 25 °C
C
DC
Single Pulse
0.01
0.01
0.1
DS
1
10
100
V
– Drain-to-Source Voltage (V)
is specified
* V
> minimum V
at which R
DS(on)
GS
GS
Safe Operating Area, Junction-to-Case
服务热线：400-655-8788
4
AO4302
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
P
DM
0.05
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
0.02
2. Per Unit Base = R
= 67 °C/W
thJA
(t)
3. T
– T
= P
Z
JM
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
10
100
600
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
服务热线：400-655-8788
5
AO4302
S
OIC (NARROW): 8-LEAD
JEDEC P
a
rt N
u
m
b
er: M
S
-012
8
6
7
2
5
4
E
H
1
3
S
h x 45
D
C
0.25 mm (G
a
ge Pl
a
ne)
A
All Le
a
d
s
0.101 mm
0.004″
q
e
B
A
1
L
MILLIMETERS
Max
INCHES
DIM
Min
Min
Max
A
A
1
B
C
D
E
e
1.35
0.10
0.35
0.19
4.80
3.80
1.75
0.20
0.51
0.25
5.00
4.00
0.053
0.004
0.014
0.0075
0.189
0.150
0.069
0.008
0.020
0.010
0.196
0.157
1.27 BSC
0.050 BSC
H
h
5.80
0.25
0.50
0°
6.20
0.50
0.93
8°
0.228
0.010
0.020
0°
0.244
0.020
0.037
8°
L
q
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
服务热线：400-655-8788
6
AO4302
RECOMMENDED MINIMUM
P
A
DS FOR SO-8
0.172
(4.369)
0.028
(0.711)
0.022
0.050
(0.559)
(1.270)
Recommended Minimum Pads
Dimensions in Inches/(mm)
服务热线：400-655-8788
7
AO4302
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data are subject to change without notice.
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representatives (collectively, the “
T
aiwan VBsemi”), assumes no responsibility for any errors, inaccuracies or
incomplete data contained in the table or any other any disclosure of any information related to the
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any goods or continuous production.
T
o
t
he maximum extent permitted by applicable law on
T
aiwan VBsemi
relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability,
including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties,
including a particular purpose, non-infringement and merchantability guarantee.
Statement on certain types of applications are based on knowledge of the product is often used in a typical
application of the general product VBsemi
T
aiwan demand that the Taiwan VBsemi of. Statement on whether the
product is suitable for a particular application is non-binding. It is the customer’s responsibility to verify specific
product features in the products described in the specification is appropriate for use in a particular application.
Parameter data sheets and technical specifications can be provided may vary depending on the application and
performance over time. All operating parameters, including typical parameters must be made by customer’s
technical experts validated for each customer application. Product specifications do not expand or modify
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aiwan
VBsemi purchasing terms and conditions, including but not limited to warranty herein.
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aiwan VBsemi products are not intended for use in medical, life saving,
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aiwan VBsemi such applications using client did not express their
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oHS compliant and meets the definition of restrictions under Directive of the European Parliament
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confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive
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halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese
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