VBsemi-Elec-AO8801-VB
| Part # | VBsemi-Elec-AO8801-VB |
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AO8801
Dual P-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free
V
DS
(V)
R
DS(on)
(
Ω
)
I
D
(A)
– 5.2
– 4.2
•
TrenchFET
®
Power MOSFETs
0.036 at
V
GS
= – 10 V
– 30
RoHS
V
0.055 at
GS
= – 4.5 V
COMPLIANT
APPLICATIONS
•
Load Switch
•
Battery Switch
S
1
S
2
TSSOP-8
G
G
2
1
D
1
D
1
2
3
4
8
7
6
5
2
2
2
S
1
S
1
1
S
S
G
G
2
Top View
D
1
D
2
P-Channel MOSFET
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
T =
25 °C, unless otherwise noted
A
Parameter
Symbol
10 s
Steady State
– 30
Unit
V
DS
Drain-Source Voltage
Gate-Source Voltage
V
V
GS
20
T
A
= 25 °C
T
A
= 70 °C
– 5.2
– 4.2
– 4.1
– 3.6
Continuous Drain Current (T
J
= 150 °C)
a
I
D
A
I
DM
I
S
Pulsed Drain Current (10 µs Pulse Width)
– 30
Continuous Source Current (Diode Conduction)
a
– 1.0
1.14
0.73
– 0.70
0.83
T
A
= 25 °C
T
A
= 70 °C
Maximum Power Dissipation
a
P
D
W
0.53
T
J
, T
stg
Operating Junction and Storage
T
e
mperature Range
– 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
86
Maximum
110
Unit
t
≤
10 s
Maximum Junction-to-Ambient
a
Maximum Junction-to-Foot
R
thJA
Steady State
Steady State
124
52
150
°C/W
R
thJF
65
Notes:
a. Surface Mounted on 1″ x 1″ FR4 board.
服务热线：400-655-8788
1
AO8801
SPECIFICATIONS
T =
25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
V
GS(th)
I
GSS
V
DS
= V
GS
, I
D
= – 250 µA
Gate Threshold Voltage
– 1.0
– 3.0
100
– 1
V
V
DS
= 0
V
,
V
GS
=
20 V
Gate-Body Leakage
nA
V
DS
= – 30
V
,
V
GS
= 0 V
V
DS
= – 30
V
,
V
GS
= 0
V
,
T
J
= 55 °C
V
DS
≥
– 5
V
,
V
GS
= – 10 V
I
DSS
I
D(on)
Zero Gate Voltage Drain Current
µA
A
– 10
On-State Drain Current
a
– 15
V
GS
=
– 10
V
,
I
D
= – 4.7 A
0.036
0.055
14
Drain-Source On-State Resistance
a
R
DS(on)
Ω
V
GS
= – 4.5
V
,
I
D
= – 3.8 A
Forward
T
r
ansconductance
a
Diode Forward Voltage
a
Dynamic
b
g
fs
V
DS
= – 15
V
,
I
D
= – 4.7 A
I
S
= – 1.0 A, V
GS
= 0 V
S
V
V
SD
– 0.74
– 1.1
20
Q
g
Q
gs
Q
gd
R
g
T
o
tal Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
T
u
rn-On Delay Time
Rise Time
13
3
V
DS
= – 15
V
,
V
GS
= – 4.5
V
,
I
D
= – 4.7 A
f = 1.0 MHz
nC
5.8
4.6
13
14
52
26
40
Ω
t
d(on)
t
r
t
d(off)
t
f
20
22
80
40
60
V
DD
= – 15
V
,
R
L
= 15
Ω
I
D
≅
– 1 A, V
GEN
= – 10
V
,
R
G
= 6
Ω
T
u
rn-Off Delay Time
Fall Time
ns
t
rr
I
F
= – 1.0 A, dI/dt = 100 A/µs
Source-Drain Reverse Recovery Time
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
30
24
18
12
6
30
24
18
12
6
T
= – 55 °C
C
V
GS
= 10 thru 5 V
25 °C
4 V
125 °C
3 V
0
0
0
1
2
3
4
5
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
服务热线：400-655-8788
2
AO8801
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
0.11
2000
1600
1200
800
400
0
0.09
0.07
C
iss
V
GS
= 4.5 V
0.05
0.03
0.01
V
GS
= 10 V
C
oss
C
rss
0
5
10
15
20
25
30
0
5
10
15
20
25
30
I
D
– Drain Current (A)
V
DS
–
D
rain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
1.60
1.40
1.20
1.00
0.80
0.60
6
V
I
= 10 V
V
I
= 15 V
GS
DS
= 4.7 A
= 4.7 A
D
D
5
4
3
2
1
0
– 50
– 25
0
25
50
75
100 125 150
0
3
6
9
12
15
T –
Junction
T
e
mperature (°C)
J
Q
–
T
o
tal
Gate Charge (nC)
g
Gate Charge
On-Resistance vs. Junction Temperature
0.15
0.12
0.09
0.06
0.03
0.00
30
T
= 150 °C
J
10
I
D
= 4.7
A
T
= 25 °C
J
1
0.1
0
2
4
6
8
10
0.0
0.3
0.6
0.9
1.2
1.5
V
GS
– Gate-to-Source Voltage (V)
V
SD
– Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
服务热线：400-655-8788
3
AO8801
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
80
0.6
0.4
I
D
= 250 µA
60
40
0.2
0.0
20
0
– 0.2
– 0.4
– 50
– 25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
Time (s)
T
–
T
e
mperature
(°C)
J
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
Limited by R
*
D
S
(
on)
10
1
1 ms
10 ms
100 ms
0.1
T
= 25 °C
C
1 s
10 s
DC
Single Pulse
0.01
0.1
1
10
100
V
DS
– Drain-to-Source Voltage (V)
* V
> minimum V
at which R
is specified
DS(on)
GS
GS
Safe Operating Area, Junction-to-Case
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 124 °C/W
thJA
(t)
3. T
– T
= P
Z
A DM
thJA
JM
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
服务热线：400-655-8788
4
AO8801
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
服务热线：400-655-8788
5
AO8801
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data are subject to change without notice.
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T
aiwan VBsemi”), assumes no responsibility for any errors, inaccuracies or
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T
o
t
he maximum extent permitted by applicable law on
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aiwan VBsemi
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including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties,
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Statement on certain types of applications are based on knowledge of the product is often used in a typical
application of the general product VBsemi
T
aiwan demand that the Taiwan VBsemi of. Statement on whether the
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product features in the products described in the specification is appropriate for use in a particular application.
Parameter data sheets and technical specifications can be provided may vary depending on the application and
performance over time. All operating parameters, including typical parameters must be made by customer’s
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aiwan
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oHS compliant and meets the definition of restrictions under Directive of the European Parliament
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