VBsemi-Elec-AOD603A-VB
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AOD603A
N- and P-Channel 60-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
V
DS
(V)
R
DS(on)
(
Ω
)
Q
g
(Typ.)
I
D
(A)
a
35
Available
0.0
3
0 at V
GS
= 10 V
0.0
33
at V
GS
= 4.5 V
0.
05
0 at V
GS
= – 10 V
0.
06
0 at V
GS
= – 4.5 V
•
•
TrenchFET
®
Power MOSFET
100 % R
g
and UIS Tested
N-Channel
P-Channel
60
6 nC
30
–
1
9
–
1
5
APPLICATIONS
CCFL Inverter
– 60
8 nC
•
TO-252
D-PAK
D1/D2
Top View
Drain Connected to
Tab
G1
G2
S1
S2
N
–
channel
P-channel
S1 G1 D1/D2 S2 G2
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Symbol Nch
Limit Pch
Limit
Parameter
Units
V
DS
V
GS
I
D
Drain-Source Voltage
60
±20
35
-60
±20
V
Gate-Source Voltage
Continuous Drain Current
a
T
C
=25°C
-20
A
Pulsed Drain Current
b
I
DM
140
35
-80
Continuous Source Current (Diode Conduction)
a
Power Dissipation
a
T
C
=25°C
T
C
=25°C
I
S
-20
A
P
D
50
T
J
, T
stg
50
W
°C
T
J
, T
stg
Operating Junction and Storage Temperature Range
-55 to 175
THERMAL RESISTANCE RATINGS
Parameter
Symbol Maximum
Units
Maximum Junction-to-Ambient
c
Maximum Junction-to-Case
R
θJA
R
θJC
50
3
°C/W
Notes
a.
b.
c.
Package Limited
Pulse width limited by maximum junction temperature
Surface Mounted on 1” x 1” FR4 Board.
服务热线：400-655-8788
1
AOD603A
Parameter
Symbol Test Conditions
Static
Min
Typ
Max
Unit
V
DS
= V
GS
, I
D
= 250 uA
1
3
-3
±100
1
V
V
V
GS(th)
I
GSS
Gate-Source Threshold Voltage
Gate-Body Leakage
V
DS
= V
GS
, I
D
= -250 uA
V
DS
= 0 V, V
GS
= ±20 V
V
DS
= 60 V, V
GS
= 0 V
V
DS
= -48 V, V
GS
= 0 V
V
DS
= 5 V, V
GS
= 10 V
V
DS
= -5 V, V
GS
= -10 V
V
GS
= 10 V, I
D
= 20 A
V
GS
= 4.5 V, I
D
= 16 A
V
GS
= -10 V, I
D
= -10 A
V
GS
= -4.5 V, I
D
= -8 A
V
DS
= 15 V, I
D
= 20 A
V
DS
= -15 V, I
D
= -10 A
I
S
= 17 A, V
GS
= 0 V
-1
nA
I
DSS
Zero Gate Voltage Drain Current
uA
-1
45
A
A
On-State Drain Current
a
I
D(on)
-25
30
mΩ
mΩ
33
50
60
Drain-Source On-Resistance
a
r
DS(on)
15
S
S
V
V
Forward Transconductance
a
Diode Forward Voltage
a
g
fs
11
0.89
-0.98
V
SD
I
S
= -10 A, V
GS
= 0 V
Dynamic
b
Q
g
Q
gs
Q
gd
t
d(on)
t
r
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
N – Channel
V
DS
= 30 V, V
GS
= 4.5 V,
I
D
= 20 A
9
3
nC
ns
4
5
N – Channel
V
DS
= 30 V, R
L
= 1.5 Ω,
I
D
= 20 A,
5
t
d(off)
t
f
Turn-Off Delay Time
Fall Time
27
8
V
GEN
= 10 V, R
GEN
= 6 Ω
C
iss
C
oss
C
rss
Q
g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
1500
84
79
10
5
N – Channel
V
DS
= 15 V, V
GS
= 0 V, f = 1 Mhz
pF
nC
P – Channel
V
DS
= -30 V, V
GS
= 4.5 V,
I
D
= -10 A
Q
gs
Q
gd
t
d(on)
t
r
4
5
P – Channel
V
DS
= -30 V, R
L
= 3 Ω,
I
D
= -10 A,
4
ns
t
d(off)
t
f
Turn-Off Delay Time
Fall Time
30
11
1180
84
60
V
GEN
= -10 V, R
GEN
= 6 Ω
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
P – Channel
V
DS
= -15 V, V
GS
= 0 V, f = 1 Mhz
pF
服务热线：400-655-8788
2
AOD603A
N-CHANNEL TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
20
18
16
14
12
10
8
5
4
3
2
1
0
V
GS
= 10 thru 4 V
T
= 125 °C
C
6
4
25 °C
3 V
2
– 55 °C
3.0 3.5
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
0.0
0.5
1.0
–
1.5
2.0
2.5
V
DS
–
Drain-to-Source
V
o
ltage (V)
V
GS
Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
1500
1200
900
600
300
0
0.0
6
0
0.0
5
5
0.0
5
0
0.0
4
5
0.0
4
0
0.0
35
0.0
3
0
0.0
2
5
0.0
2
0
C
iss
V
GS
= 4.5 V
V
GS
= 10 V
C
oss
C
rss
0
10
20
30
40
50
60
0
2
4
6
8
10 12 14 16 18 20
V
DS
–
Drain-to-Source
V
o
ltage (V)
I
D
–
Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
10
8
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
V
I
= 30 V
= 4.3 A
DS
D
V
= 10 V
= 4.3 A
GS
I
D
6
4
2
0
0
3
6
9
12
15
– 50
– 25
0
T
25
50
75
100 125 150
Q
–
T
o
tal Gate Charge (nC)
– Junction
T
e
mperature (°C)
g
J
Gate Charge
On-Resistance vs. Junction Temperature
服务热线：400-655-8788
3
AOD603A
N-CHANNEL TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
0.12
0.11
0.10
0.09
0.08
0.07
0.06
0.05
0.04
20
T
= 150 °C
J
10
I
D
= 4.3 A
T
= 25 °C
J
1
0
2
4
6
8
10
0.0
0.2
0.4
Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.6
0.8
1.0
1.2
1.4
V
–
V
GS
– Gate-to-Source
Voltage (V)
SD
On-Resistance vs. Gate-to-Source Voltage
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
25
20
I
D
= 250 µA
15
10
5
0
– 50
– 25
0
25
50
75
100 125 150
0.01
0.1
1
10
100
1000
T
–
T
e
mperature
(°C)
Time (s)
J
Threshold Voltage
100
Single Pulse Power, Junction-to-Ambient
Limited by R
*
DS(on)
10
100 µs
1 ms
1
10 ms
100 ms
1 s
0.1
10 s
DC
T
= 25 °C
A
Single Pulse
0.01
0.001
0.1
1
10
Drain-to-Source Voltage (V)
minimum V
at which R
is specified
100
V
DS
–
>
* V
GS
GS
DS(on)
Safe Operating Area
服务热线：400-655-8788
4
AOD603A
N-CHANNEL TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
6
5
4
3
2
1
0
0
25
50
75
100
125
150
25
50
75
100
125
150
T
– Case
T
e
mperature (°C)
T
– Case
T
e
mperature
(
°
C)
C
C
Power Derating
Current Derating*
100
10
1
.
L
I
D
T
=
A
BV – V
DD
0.000001
0.00001
0.0001
0.001
T
A
– Time
In Avalanche (s)
Single Pulse Avalanche Capability
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
服务热线：400-655-8788
5
AOD603A
N-CHANNEL TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
0.02
2. Per Unit Base = R
= 90 °C/W
thJA
(t)
3. T
– T
= P
Z
A DM
thJA
JM
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
10
100
600
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
服务热线：400-655-8788
6
AOD603A
P-CHANNEL TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
25
20
15
10
5
25
20
15
10
5
V
GS
= 10 thru 5 V
4 V
T
= 125 °C
C
3 V
25 °C
– 55 °C
0
0
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
V
DS
– Drain-to-Source
V
o
ltage (V)
V
GS
–
Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
1500
1200
900
600
300
0
0.
11
0.
10
0.
0
9
0.
08
0.
07
0.
06
0.
05
0.04
0.00
C
iss
V
GS
= 4.5 V
V
GS
= 10 V
C
oss
C
rss
0
5
10
15
20
25
0
10
20
–
30
40
50
60
I
D
–
Drain Current (A)
V
DS
Drain-to-Source
V
o
ltage (V)
On-Resistance vs. Drain Current
Capacitance
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
10
8
V
= 10 V
= 3.1 A
GS
V
= 30 V
= 3.1 A
DS
I
D
I
D
6
4
2
0
– 50
– 25
0
25
T – Junction
Temperature (°C)
J
50
75 100
125 150 175
0
3
6
9
12
15
Q
–
T
o
tal Gate Charge (nC)
g
Gate Charge
On-Resistance vs. Junction Temperature
服务热线：400-655-8788
7
AOD603A
P-CHANNEL TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
20
T
= 150 °C
J
10
I
= 3.1
A
D
T
= 25 °C
1.0
J
1
0.0
0
2
4
6
8
10
0.2
0.4
Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.6
0.8
1.2
V
– Gate-to-Source
Voltage (V)
V
SD
–
GS
On-Resistance vs. Gate-to-Source Voltage
0.6
0.4
50
40
I
D
= 250 µA
30
20
0.2
0.0
– 0.2
10
0
– 0.4
-3
-2
-1
– 50
– 25
0
25
50
75
100 125 150
10
10
10
1
10
100
600
T
–
T
e
mperature
(°C)
Time (s)
J
Threshold Voltage
Single Pulse Power
100
I
Limited
DM
Limited
by R
10
1
P(t) = 0.0001
DS(on)
*
P(t) = 0.001
I
P(t) = 0.01
P(t) = 0.1
D(on)
Limited
0.1
T
A
= 25 °C
Single Pulse
P(t) = 1
P(t) = 10
DC
BVDSS Limited
10
0.01
0.1
1
100
V
DS
–
Drain-to-Source Voltage (V)
* V
GS
>
minimum V
at which R
is specified
GS
DS(on)
Safe Operating Area, Junction-to-Case
服务热线：400-655-8788
8
AOD603A
P-CHANNEL TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
25
50
75
100
125
150
T
– Case
T
e
mperature (°C)
C
Current Derating*
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
100
10
1
.
L
I
D
=
T
A
BV – V
DD
0
25
50
75
100
125
150
0.000001
0.00001
0.0001
0.001
T
A
– Time
In Avalanche (s)
T
– Case
T
e
mperature (°C)
C
Power Derating, Junction-to-Foot
Single Pulse Avalanche Capability
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
服务热线：400-655-8788
9
AOD603A
P-CHANNEL TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 8
5
°
C/W
thJA
(t)
3. T
– T
= P
Z
A DM
thJA
JM
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
10
100
600
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
服务热线：400-655-8788
10
AOD603A
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data are subject to change without notice.
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representatives (collectively, the “
T
aiwan VBsemi”), assumes no responsibility for any errors, inaccuracies or
incomplete data contained in the table or any other any disclosure of any information related to the
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any goods or continuous production.
T
o
t
he maximum extent permitted by applicable law on
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aiwan VBsemi
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including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties,
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Statement on certain types of applications are based on knowledge of the product is often used in a typical
application of the general product VBsemi
T
aiwan demand that the Taiwan VBsemi of. Statement on whether the
product is suitable for a particular application is non-binding. It is the customer’s responsibility to verify specific
product features in the products described in the specification is appropriate for use in a particular application.
Parameter data sheets and technical specifications can be provided may vary depending on the application and
performance over time. All operating parameters, including typical parameters must be made by customer’s
technical experts validated for each customer application. Product specifications do not expand or modify
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aiwan
VBsemi purchasing terms and conditions, including but not limited to warranty herein.
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aiwan VBsemi products are not intended for use in medical, life saving,
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Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be
RoHS compliant and meets the definition of restrictions under Directive of the European Parliament
2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and
electronic equipment (EEE) – modification, unless otherwise specified as
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Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We
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Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as
halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese
VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products
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