VBsemi-Elec-AP2308GE-VB
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AP2308GE
N-Channel 20 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
I
D
(A)
e
V
DS
(V)
R
DS(on)
(
Ω
)
Q
g
(Typ.)
Definition
TrenchFET
®
Power MOSFET
100 % R
g
Tested
6
a
0.028 at
V
GS
= 4.5 V
0.042 at
V
GS
= 2.5 V
0.050 at
V
GS
= 1.8 V
•
•
6
a
20
8.8 nC
•
Compliant to RoHS Directive 2002/95/EC
5.6
APPLICATIONS
•
DC/DC Converters
•
Load Switch for Portable Applications
SO
T
–
23
G
S
1
2
3
D
T
o
p
V
ie
w
ABSOLUTE MAXIMUM RATINGS
T =
25 °C, unless otherwise noted
A
Parameter
Symbol
Limit
20
Unit
Drain-Source Voltage
Gate-Source Voltage
V
DS
V
V
GS
12
6
a
T
C
= 25 °C
T
C
= 70 °C
A
= 25 °C
5.1
Continuous Drain Current (T
J
= 150 °C)
I
D
5
b, c
4
b, c
20
T
A
T
A
= 70 °C
Pulsed Drain Current
I
DM
I
S
T
C
= 25 °C
1.75
1.04
b, c
Continuous Source-Drain Diode Current
T
A
= 25 °C
T
C
= 25 °C
T
C
= 70 °C
2.1
1.3
1.25
b, c
Maximum Power Dissipation
P
D
W
T
A
= 25 °C
0.8
b, c
T
A
= 70 °C
Operating Junction and Storage
T
e
mperature Range
Soldering Recommendations (Peak
T
e
mperature)
T
J
, T
stg
– 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
R
thJA
R
thJF
Typical
80
Maximum
100
Unit
Maximum Junction-to-Ambient
b, d
t
≤
5 s
Steady State
°C/W
Maximum Junction-to-Foot (Drain)
40
60
Notes:
a. Package
limited
b. Surface
Mounted on 1″ x 1″ FR4 board.
c. t
= 5 s.
d. Maximum
under steady state conditions is 125 °C/W.
e. Based
on T
C
= 25 °C.
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AP2308GE
SPECIFICATIONS
T =
25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
V
DS
Δ
V
DS
/T
J
Δ
V
GS(th)
/T
J
V
GS(th)
V
GS
= 0
V
,
I
D
= 250 µA
I
D
= 250 µA
Drain-Source Breakdown Voltage
DS
T
e
mperature Coefficient
GS(th)
T
e
mperature Coefficient
20
V
V
25
mV/°C
V
– 2.6
V
DS
= V
GS
, I
D
= 250 µA
V
Gate-Source Threshold Voltage
Gate-Source Leakage
0.45
20
1.0
100
1
I
GSS
V
DS
= 0
V
,
V
GS
=
8 V
nA
V
DS
= 20
V
,
V
GS
= 0 V
DS
= 20
V
,
V
GS
= 0
V
,
T
J
= 70 °C
V
DS
≤
5
V
,
V
GS
= 4.5 V
V
GS
=
4.5
V
,
I
D
= 5.0 A
V
GS
=
2.5
V
,
I
D
= 4.7 A
V
GS
=
1.8
V
,
I
D
= 4.3 A
V
DS
= 10
V
,
I
D
= 5.0 A
I
DSS
µA
A
Zero Gate Voltage Drain Current
On-State Drain Current
a
V
10
I
D(on)
0.028
0.042
0.050
24
Drain-Source On-State Resistance
a
Forward
T
r
ansconductance
a
Ω
R
DS(on)
g
fs
S
Dynamic
b
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse
T
r
ansfer Capacitance
865
105
55
12
8.8
1.1
0.7
2.4
8
V
DS
= 10
V
,
V
GS
= 0
V
, f = 1
M
Hz
pF
V
DS
= 10
V
,
V
GS
= 5
V
,
I
D
= 5.0 A
18
14
Q
g
T
o
tal Gate Charge
nC
Q
gs
Q
gd
R
g
Gate-Source Charge
V
DS
= 10
V
,
V
GS
= 4.5
V
,
I
D
= 5.0 A
f = 1 MHz
Gate-Drain Charge
Ω
Gate Resistance
0.5
4.8
16
26
47
16
10
20
32
12
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
T
u
rn-On Delay Time
V
DD
= 10
V
,
R
L
= 2.2
Ω
Rise Time
17
31
8
I
D
≅
4 A, V
GEN
= 4.5
V
,
R
g
= 1
Ω
T
u
rn-Off Delay Time
Fall Time
ns
T
u
rn-On Delay Time
5
V
DD
= 10
V
,
R
L
= 2.2
Ω
Rise Time
13
21
6
I
D
≅
4 A, V
GEN
= 5
V
,
R
g
= 1
Ω
T
u
rn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
I
S
I
SM
V
SD
t
rr
T
C
= 25 °C
1.75
20
A
I
S
= 4 A, V
GS
=
0 V
0.75
12
5
1.2
20
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ns
nC
Q
rr
t
a
10
I
F
= 4 A, dI/dt = 100 A/µs, T
J
= 25 °C
7
ns
t
b
5
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
E-mail：China@VBsemi TEL:86-755-83251052
AP2308GE
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
20
15
10
5
5
4
3
2
1
0
V
= 1 0 V t h r u 3 V
GS
V
= 2 . 5 V
GS
T
= 25 °C
C
T
= 125 °C
C
V
= 1 V
1.5
GS
T
= – 55 °C
C
0
0.0
0.5
1.0
2.0
0.0
0.3
V
0.6
0.9
1.2
1.5
– Gate-to-Source Voltage (V)
V
– Drain-to-Source Voltage (V)
GS
DS
Transfer Characteristics
Output Characteristics
0.045
0.040
0.035
0.030
0.025
0.020
1200
900
600
300
0
V
GS
= 1.8 V
= 2.5 V
C
iss
V
GS
V
= 4.5 V
GS
C
oss
C
rss
0
5
10
15
20
0
5
10
15
20
I
– Drain Current (A)
V
– Drain-to-Source Voltage (V)
DS
D
Capacitance
On-Resistance vs. Drain Current and Gate Voltage
5
4
3
2
1
0
1.70
1.45
1.20
0.95
0.70
I
= 5 A
D
V
= 2.5
V
, I
=
4
.7 A
D
GS
V
= 10 V
DS
V
= 5 V
DS
V
= 4.5 V, I
= 5 A
D
GS
V
= 16 V
DS
0
2
4
6
8
10
– 50
– 25
0
25
50
75
100 125 150
T
– Junction
T
e
mperature (°C)
Q
–
T
o
tal Gate Charge (nC)
J
g
On-Resistance vs. Junction Temperature
Gate Charge
E-mail：China@VBsemi TEL:86-755-83251052
AP2308GE
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
0.06
0.05
0.04
0.03
0.02
I
= 5 A
D
T
= 150 °C
J
10
T
= 125 °C
J
T
= 25 °C
J
1
T
= 25 °C
J
0.1
0.0
0.3
0.6
0.9
1.2
0
2
4
6
8
V
– Gate-to-Source Voltage (V)
V
– Source-to-Drain Voltage (V)
GS
SD
On-Resistance vs. Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
0.9
0.7
0.5
0.3
0.1
32
24
16
8
I
= 250 μA
D
0
– 50
– 25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
100
Time (s)
Single Pulse Power (Junction-to-Ambient)
T
–
T
e
mperature (°C)
J
Threshold Voltage
100
Limited by R
*
DS(on)
10
100 μs
1 ms
1
10 ms
T
= 25 °C
A
100 ms
Single Pulse
0.1
1 s, 10 s
DC
BVDSS Limited
0.01
0.1
1
10
100
V
– Drain-to-Source Voltage (V)
DS
* V
> minimum V
at which R
is specified
GS
GS
DS(on)
Safe Operating Area, Junction-to-Ambient
E-mail：China@VBsemi TEL:86-755-83251052
AP2308GE
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
7.5
6.0
4.5
3.0
1.5
0.0
Package Limited
0
25
50
75
100
125
150
T
– Case
T
e
mperature (°C)
C
Current Derating*
2.5
2.0
1.5
1.0
0.5
0.0
1.2
0.9
0.6
0.3
0.0
0
0
25
50
75
100
125
150
25
50
75
100
125
150
T
– Case
T
e
mperature (°C)
T
A
– Ambient
T
e
mperature (°C)
C
Power Derating, Junction-to-Foot
Power Derating, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max.)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
E-mail：China@VBsemi TEL:86-755-83251052
AP2308GE
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
1
Duty Cycle = 0.5
0.2
0.1
Notes:
0.1
P
DM
0.05
0.02
t
1
t
2
t
1
1. Duty Cycle, D =
t
2
2. Per Unit Base = R
= 125 °C/W
thJA
(t)
3. T
– T
= P
Z
JM
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
1
100
10 000
1000
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Duty Cycle = 0.5
0.2
0.1
0.02
Single Pulse
0.05
0.1
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
E-mail：China@VBsemi TEL:86-755-83251052
AP2308GE
SOT-23 (TO-236): 3-LEAD
b
3
E
1
E
1
2
e
S
e
1
D
0.10 mm
0.004″
C
C
0.25 mm
q
A
2
A
G
au
ge Pl
a
ne
S
e
a
ting Pl
a
ne
S
e
a
ting Pl
a
ne
C
A
1
L
1
L
MILLIMETERS
INCHES
Dim
Min
0.89
0.01
Max
1.12
0.10
Min
0.0
3
5
0.0004
Max
0.044
0.004
A
A
1
A
2
0.88
0.
3
5
0.085
2.80
2.10
1.20
1.02
0.50
0.18
3
.04
2.64
1.40
0.0
3
46
0.014
0.00
3
0.110
0.08
3
0.047
0.040
0.020
0.007
0.120
0.104
0.055
b
c
D
E
E
1
e
0.95 BSC
1.90 BSC
0.0
3
74 Ref
e
1
0.0748 Ref
L
0.40
0.60
8°
0.016
0.024
8°
L
1
0.64 Ref
0.50 Ref
0.025 Ref
0.020 Ref
S
q
3
°
3
°
ECN: S-0
3
946-Rev. K, 09-Jul-01
DWG: 5479
E-mail：China@VBsemi TEL:86-755-83251052
AP2308GE
RECOMMENDED MINIMUM
P
A
DS FOR SO
T
–
23
0.037
0.022
(0.950)
(0.559)
0.053
(1.341)
0.097
(2.459)
Recommended Minimum Pads
Dimensions in Inches/(mm)
E-mail：China@VBsemi TEL:86-755-83251052
AP2308GE
Disclaimer
All products due to improve reliability, function or design or for other reasons, product specifications and
data are subject to change without notice.
Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their
representatives (collectively, the “
T
aiwan VBsemi”), assumes no responsibility for any errors, inaccuracies or
incomplete data contained in the table or any other any disclosure of any information related to the
Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of
any goods or continuous production.
T
o
t
he maximum extent permitted by applicable law on
T
aiwan VBsemi
relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability,
including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties,
including a particular purpose, non-infringement and merchantability guarantee.
Statement on certain types of applications are based on knowledge of the product is often used in a typical
application of the general product VBsemi
T
aiwan demand that the Taiwan VBsemi of. Statement on whether the
product is suitable for a particular application is non-binding. It is the customer’s responsibility to verify specific
product features in the products described in the specification is appropriate for use in a particular application.
Parameter data sheets and technical specifications can be provided may vary depending on the application and
performance over time. All operating parameters, including typical parameters must be made by customer’s
technical experts validated for each customer application. Product specifications do not expand or modify
T
aiwan
VBsemi purchasing terms and conditions, including but not limited to warranty herein.
Unless expressly stated in writing,
T
aiwan VBsemi products are not intended for use in medical, life saving,
or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal
injury or death, use or sale of products used in
T
aiwan VBsemi such applications using client did not express their
own risk. Contact your authorized
T
aiwan VBsemi people who are related to product design applications and
other terms and conditions in writing.
The information provided in this document and the company’s products without a license, express or implied,
by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product
names and trademarks referred to herein are trademarks of their respective representatives will be all.
Material Category Policy
Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be
oHS compliant and meets the definition of restrictions under Directive of the European Parliament
2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and
electronic equipment (EEE) – modification, unless otherwise specified as inconsistent.(www.VBsemi.
tw
)
Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We
confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive
2011/65 /.
Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as
halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese
VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products
conform to confirm compliance with IEC 61249-2-21 standard level JS709A.
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