VBsemi-Elec-AP4511GH-VB
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AP4511GH
N- and P-Channel 40 V (D-S) MOSFET
FEATURES
• TrenchFET
®
Power MOSFET
• 100 % R
g
and UIS T
d
ested
PRODUCT SUMMARY
N-CHANNEL
P-CHANNEL
– 40
V
DS
(V)
40
R
DS(on)
(
) at V
GS
R
DS(on)
(
) at V
GS
I
D
(A)
=
=
10 V
0.014
0.016
ꢀ0
0.014
4.ꢀ V
0.016
APPLICATIONS
– ꢀ0
•
CCFL Inverter
Configuration
N- and P-Pair
TO-252-4L
D-PAK
D1/D2
D1/D2
Top
V
ie
w
Drain Connected to
Ta
b
G1
G2
S1
S2
N
–
channel
P-channel
S
1
G
1
S G
2 2
ABSOLUTE MAXIMUM RATINGS
(T
C
= 2ꢀ °C, unless otherwise noted)
PARAMETER
SYMBOL
N-CHANNEL
P-CHANNEL
UNIT
Drain-Source Voltage
Gate-Source Voltage
V
DS
40
– 40
V
V
GS
20
T
C
= 2ꢀ °C
ꢀ0
3ꢀ
-ꢀ0
-3ꢀ
Continuous Drain Current
a
I
D
T
C
= 12ꢀ °C
Continuous Source Current (Diode Conduction)
a
Pulsed Drain Current
b
I
S
A
ꢀ0
-ꢀ0
I
DM
I
AS
1ꢀ0
30
-1ꢀ0
– 30
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
E
AS
24ꢀ
108
32
24ꢀ
108
32
mJ
W
T
C
= 2ꢀ °C
Maximum Power Dissipation
b
P
D
T
C
= 12ꢀ °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
T
J
, T
stg
– ꢀꢀ to + 17ꢀ
260
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
R
thJA
N-CHANNEL
P-CHANNEL
UNIT
Junction-to-Ambient
PCB Mount
c
8ꢀ
8ꢀ
°C/W
Junction-to-Case (Drain)
R
thJC
3.1
3.1
Notes
a. Package
limited.
b. Pulse
test; pulse width
300 μs, duty cycle
2 %.
c. When
mounted on 1″ square PCB (FR4 material).
d. Parametric
verification ongoing.
服务热线：400-655-8788
1
AP4511GH
SPECIFICATIONS
(T
C
= 2ꢀ °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX. UNIT
Static
V
GS
= 0 V, I
D
= 2ꢀ0 μA
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
40
–
–
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
V
DS
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= – 2ꢀ0 μA
V
DS
= V
GS
, I
D
= 2ꢀ0 μA
– 40
–
–
V
1.0
–
3.0
V
DS
= V
GS
, I
D
= – 2ꢀ0 μA
– 1.0
–
-3.0
–
–
100
nA
V
DS
= 0 V, V
GS
20 V
=
–
–
100
V
GS
= 0 V
V
GS
= 0 V
GS
= 0 V
V
DS
= 40 V
V
DS
= – 40 V
–
–
1
–
–
– 1
V
V
DS
= 40 V, T
J
= 12ꢀ °C
V
DS
= – 40 V, T
J
= 12ꢀ °C
V
DS
= 40 V, T
J
= 17ꢀ °C
V
DS
= – 40 V, T
J
= 17ꢀ °C
V
DS
ꢀ V
–
–
ꢀ0
μA
Zero Gate Voltage Drain Current
On-State Drain Current
a
I
DSS
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 0 V
–
–
– ꢀ0
–
–
1ꢀ0
–
–
– 1ꢀ0
V
GS
= 10 V
V
GS
= – 10 V
V
GS
= 10 V
V
GS
= – 10 V
V
GS
= 10 V
2ꢀ
–
–
I
D(on)
A
V
DS
ꢀ V
– 2ꢀ
–
–
I
D
= 38 A
N-Ch
P-Ch
N-Ch
–
–
–
–
–
–
–
–
0.014
0.014
–
–
I
D
= – 38 A
I
D
= 38 A,
T
=
1
2ꢀ °C
0.017
0.
0
-17
0.02ꢀ
0
.
–
0
2ꢀ
0.016
0.016
–
–
–
–
J
V
GS
= – 10 V
I
D
= – 38 A,
T
=
1
2ꢀ °C
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
J
Drain-Source On-State Resistance
a
R
DS(on)
S
V
GS
= 10 V
V
GS
= – 10 V
V
GS
= 4.ꢀ V
V
GS
= – 4.ꢀ V
I
D
= 38 A,
T
=
1
7ꢀ °C
J
I
D
= – 38 A,
T
=
1
7ꢀ °C
J
I
D
= 30 A
–
= – 30A
–
I
D
V
DS
= 1ꢀ V, I
D
= 38 A
N-Ch
P-Ch
–
–
40
18
–
Forward Transconductance
b
Dynamic
b
g
fs
V
DS
= – 1ꢀ V, I
D
= – 38 A
–
V
GS
= 0 V
GS
= 0 V
V
DS
= 20 V, f = 1 MHz
V
DS
= – 20 V, f = 1 MHz
V
DS
= 20 V, f = 1 MHz
V
DS
= – 20 V, f = 1 MHz
V
DS
= 20 V, f = 1 MHz
V
DS
= – 20 V, f = 1 MHz
V
DS
= 20 V, I
D
= 10 A
V
DS
= – 20 V, I
D
= – 10 A
V
DS
= 20 V, I
D
= 10 A
V
DS
= – 20 V, I
D
= – 10 A
V
DS
= 20 V, I
D
= 10 A
V
DS
= – 20 V, I
D
= – 10 A
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
–
–
1799
2000
282
320
109
220
310
420
ꢀ.7
2248
3ꢀ00
3ꢀ2
ꢀꢀ0
136
360
–
Input Capacitance
C
iss
C
oss
C
rss
Q
g
V
V
GS
= 0 V
V
GS
= 0 V
–
Output Capacitance
Reverse
T
r
ansfer Capacitance
Total Gate Charge
c
pF
–
V
GS
= 0 V
–
V
GS
= 0 V
V
GS
= 10 V
V
GS
= – 10 V
–
–
–
–
V
GS
= 10 V
–
–
nC
Gate-Source Charge
c
Gate-Drain Charge
c
Gate Resistance
Q
gs
Q
gd
R
g
V
GS
= – 10 V
V
GS
= 10 V
V
GS
= – 10 V
–
ꢀ.ꢀ
–
–
4.8
–
–
10.ꢀ
4.11
6.3
–
2
3.1
6.2
9.ꢀ
f = 1 MHz
Notes
a. Pulse
test; pulse width
300 μs, duty cycle
2 %.
b. Guaranteed
by design, not subject to production testing.
c.
I
ndependent of operating temperature.
服务热线：400-655-8788
2
AP4511GH
SPECIFICATIONS
(T
C
= 2ꢀ °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX. UNIT
V
DD
= 20 V, R
L
= 2
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
–
7
11
I
D
10 A, V
GEN
= 10 V, R
g
= 1
Turn-On Delay Time
c
t
d(on)
V
DD
= – 20 V, R
L
= 2
–
–
–
–
–
–
–
11
21
9
17
32
I
D
– 10 A, V
GEN
= – 10 V, R
g
= 1
V
DD
= 20 V, R
L
= 2
I
D
10 A, V
GEN
= 10 V, R
g
= 1
Rise Time
c
t
r
t
d(off)
t
f
V
DD
= – 20 V, R
L
= 2
I
D
– 10 A, V
GEN
= – 10 V, R
g
= 1
14
ns
ꢀ0
V
DD
= 20 V, R
L
= 2
I
D
10 A, V
GEN
= 10 V, R
g
= 1
33
ꢀꢀ
19
91
Turn-Off Delay Time
c
V
DD
= – 20 V, R
L
= 2
I
D
– 10 A, V
GEN
= – 10 V, R
g
= 1
83
29
V
DD
= 20 V, R
L
= 2
I
D
10 A, V
GEN
= 10 V, R
g
= 1
Fall Time
c
V
DD
= – 20 V, R
L
= 2
I
D
– 10 A, V
GEN
= – 10 V, R
g
= 1
137
Source-Drain Diode Ratings and Characteristics
b
N-Ch
P-Ch
N-Ch
P-Ch
–
–
–
–
–
–
32
A
Pulsed Current
a
I
SM
– 32
I
S
= 4 A
0.79
1.2
V
Forward Voltage
V
SD
I
S
= – 4 A
– 0.82
– 1.2
Notes
a. Pulse
test; pulse width
300 μs, duty cycle
2 %.
b. Guaranteed
by design, not subject to production testing.
c. Independent
of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
服务热线：400-655-8788
3
AP4511GH
N-CHANNEL TYPICAL CHARACTERISTICS
(T
A
= 2ꢀ °C, unless otherwise noted)
1ꢀ0
120
90
60
30
0
1ꢀ0
120
90
60
30
0
V
GS
= 10 V thru 4 V
T
C
= 2ꢀ
°
C
T
C
= 12ꢀ
°
C
V
GS
= 3 V
T
C
= – ꢀꢀ
°
C
0
0
0
3
6
9
12
1ꢀ
2ꢀ
40
0
2
4
6
8
10
V
D
S
– Drain-to-
S
ource Voltage (V)
V
GS
–
G
ate-to-
S
ource Voltage (V)
Output Characteristics
Transfer Characteristics
2.0
1.6
1.2
0.8
0.4
0.0
80
64
48
32
16
0
T
C
= – ꢀꢀ
°
C
T
C
= 2ꢀ
°
C
T
C
= 12ꢀ
°
C
T
C
= 2ꢀ
°
C
T
C
= 12ꢀ
°
C
T
C
= – ꢀꢀ
°
C
10
0
2
4
6
8
ꢀ
10
1ꢀ
20
V
GS
–
G
ate-to-
S
ource Voltage (V)
I
D
– Drain Current (A)
Transfer Characteristics
Transconductance
2ꢀ00
2000
1ꢀ00
1000
ꢀ00
0.02ꢀ
0.020
0.01ꢀ
0.010
0.00ꢀ
0.000
C
i
ss
V
GS
= 4.ꢀ V
V
GS
= 10 V
C
o
ss
C
r
ss
0
0
8
16
24
32
40
8
16
24
32
I
D
– Drain Current (A)
V
D
S
– Drain-to-
S
ource Voltage (V)
On-Resistance vs. Drain Current
Capacitance
服务热线：400-655-8788
4
AP4511GH
N-CHANNEL TYPICAL CHARACTERISTICS
(T
A
= 2ꢀ °C, unless otherwise noted)
2.0
1.7
1.4
1.1
0.8
0.ꢀ
10
I
D
= 10 A
I
D
= 8 A
V
GS
= 10 V
8
V
D
S
= 20 V
6
V
GS
= 4.ꢀ V
4
2
0
– ꢀ0
– 2ꢀ
0
2ꢀ
ꢀ0
7ꢀ 100
12ꢀ 1ꢀ0 17ꢀ
0
8
16
24
32
40
Q
g
– Total
G
ate Charge (nC)
T
J
– Junction Temperature (
°
C)
Gate Charge
On-Resistance vs. Junction Temperature
100
10
0.10
0.08
0.06
0.04
0.02
0.00
T
J
= 1ꢀ0
°
C
1
0.1
T
J
= 2ꢀ
°
C
T
J
= 1ꢀ0
°
C
T
J
= 2ꢀ
°
C
0.01
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
S
D
–
S
ource-to-Drain Voltage (V)
V
GS
–
G
ate-to-
S
ource Voltage (V)
Source Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
ꢀ1
49
47
4ꢀ
43
41
39
0.ꢀ
I
D
= 1 mA
0.1
– 0.3
– 0.7
– 1.1
– 1.ꢀ
I
D
= ꢀ mA
I
D
= 2ꢀ0 μA
– ꢀ0
– 2ꢀ
0
2ꢀ
ꢀ0
7ꢀ 100
12ꢀ 1ꢀ0 17ꢀ
– ꢀ0
– 2ꢀ
0
2ꢀ
ꢀ0
7ꢀ 100
12ꢀ 1ꢀ0 17ꢀ
T
J
– Junction Temperature (
°
C)
T
J
– Temperature (
°
C)
Threshold Voltage
Drain Source Breakdown vs. Junction Temperature
服务热线：400-655-8788
5
AP4511GH
N-CHANNEL TYPICAL CHARACTERISTICS
(T
A
= 2ꢀ °C, unless otherwise noted)
ꢀ00
I
DM
Limited
ꢀ0
1 m
s
I
D
Limited
10 m
s
100 m
s
, 1
s
, 10
s
, DC
ꢀ
0.ꢀ
Limited by R
D
S
(on)
*
BVD
SS
Limited
T
C
= 2ꢀ
°
C
S
ingle Pul
s
e
0.0ꢀ
0.01
0.1
1
10
100
V
D
S
– Drain-to-
S
ource Voltage (V)
* V
GS
> minimum V
GS
at which R
D
S
(on)
i
s s
pecified
Safe Operating Area
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 85 °C/W
thJA
(t)
3. T
–
T
A
= P
Z
JM
DM thJA
Single Pulse
4. Surface Mounted
0.01
–
3
–
2
–
1
10
10
10
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
服务热线：400-655-8788
6
AP4511GH
N-CHANNEL TYPICAL CHARACTERISTICS
(T
A
= 2ꢀ °C, unless otherwise noted)
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
–
4
–
3
–
2
–
1
10
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Note
•
The characteristics shown in the two graphs
– Normalized Transient Thermal Impedance Junction-to-Ambient (2ꢀ °C)
– Normalized Transient Thermal Impedance Junction-to-Case (2ꢀ °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board – FR4, size 1″ x 1″ x 0.062″, double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
服务热线：400-655-8788
7
AP4511GH
P-CHANNEL TYPICAL CHARACTERISTICS
(T
A
= 2ꢀ °C, unless otherwise noted)
1ꢀ0
120
90
60
30
0
1ꢀ0
120
90
60
30
0
V
GS
= 10 V thru ꢀ V
V
GS
= 4 V
T
C
= 2ꢀ
°
C
T
C
= 12ꢀ
°
C
T
C
= – ꢀꢀ
°
C
V
GS
= 3 V
8
0
2
4
6
10
0
0
0
3
6
9
12
1ꢀ
V
GS
–
G
ate-to-
S
ource Voltage (V)
V
D
S
– Drain-to-
S
ource Voltage (V)
Output Characteristics
Transfer Characteristics
2.0
1.6
1.2
0.8
0.4
0.0
30
24
18
12
6
T
C
= – ꢀꢀ
°
C
T
C
= 2ꢀ
°
C
T
C
= 12ꢀ
°
C
T
C
= 2ꢀ
°
C
T
C
= 12ꢀ
°
C
T
C
= – ꢀꢀ
°
C
0
0
2
4
6
8
10
ꢀ
10
1ꢀ
20
2ꢀ
V
GS
–
G
ate-to-
S
ource Voltage (V)
I
D
– Drain Current (A)
Transfer Characteristics
Transconductance
3000
2400
1800
1200
600
0.10
0.08
0.06
0.04
0.02
0.00
C
i
ss
V
GS
= 4.ꢀ V
V
GS
= 10 V
C
o
ss
C
r
ss
0
8
16
24
32
40
0
10
20
30
40
ꢀ0
V
D
S
– Drain-to-
S
ource Voltage (V)
I
D
– Drain Current (A)
On-Resistance vs. Drain Current
Capacitance
服务热线：400-655-8788
8
AP4511GH
P-CHANNEL TYPICAL CHARACTERISTICS
(T
A
= 2ꢀ °C, unless otherwise noted)
2.0
1.7
1.4
1.1
0.8
0.ꢀ
10
I
D
= 8 A
I
D
= 10 A
V
GS
= 10 V
8
6
V
D
S
= 20 V
V
GS
= 4.ꢀ V
4
2
0
– ꢀ0
– 2ꢀ
0
2ꢀ
ꢀ0
7ꢀ 100
12ꢀ 1ꢀ0 17ꢀ
0
10
20
30
40
ꢀ0
T
J
– Junction Temperature (
°
C)
Q
g
– Total
G
ate Charge (nC)
Gate Charge
On-Resistance vs. Junction Temperature
100
10
0.1ꢀ
0.12
0.09
0.06
0.03
0.00
T
J
= 1ꢀ0
°
C
1
0.1
T
J
= 1ꢀ0
°
C
T
J
= 2ꢀ
°
C
0.01
T
J
= 2ꢀ
°
C
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
S
D
–
S
ource-to-Drain Voltage (V)
V
GS
–
G
ate-to-
S
ource Voltage (V)
Source Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
1.0
– 41
– 43
– 4ꢀ
– 47
– 49
– ꢀ1
I
D
= 2ꢀ0 μA
I
D
= 1 mA
0.7
0.4
I
D
= ꢀ mA
0.1
– 0.2
– 0.ꢀ
– ꢀ0
– 2ꢀ
0
2ꢀ
ꢀ0
7ꢀ 100
12ꢀ 1ꢀ0 17ꢀ
– ꢀ0
– 2ꢀ
0
2ꢀ
ꢀ0
7ꢀ 100
12ꢀ 1ꢀ0 17ꢀ
T
J
– Temperature (
°
C)
T
J
– Junction Temperature (
°
C)
Threshold Voltage
Drain Source Breakdown vs. Junction Temperature
服务热线：400-655-8788
9
AP4511GH
P-CHANNEL TYPICAL CHARACTERISTICS
(T
A
= 2ꢀ °C, unless otherwise noted)
ꢀ00
I
DM
Limited
Limited by R
D
S
(on)
*
ꢀ0
ꢀ
1 m
s
I
D
Limited
10 m
s
100 m
s
, 1
s
, 10
s
, DC
0.ꢀ
0.0ꢀ
BVD
SS
Limited
T
C
= 2ꢀ
°
C
S
ingle Pul
s
e
0.01
0.1
1
10
100
V
D
S
– Drain-to-
S
ource Voltage (V)
* V
GS
> minimum V
GS
at which R
D
S
(on)
i
s s
pecified
Safe Operating Area
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 85 °C/W
thJA
(t)
3.
T
JM
–
T =
P
Z
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
–
3
10
–
2
10
–
1
10
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
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10
AP4511GH
P-CHANNEL TYPICAL CHARACTERISTICS
(T
A
= 2ꢀ °C, unless otherwise noted)
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
–
4
–
3
10
–
2
10
–
1
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Note
•
The characteristics shown in the two graphs
– Normalized Transient Thermal Impedance Junction-to-Ambient (2ꢀ °C)
– Normalized Transient Thermal Impedance Junction-to-Case (2ꢀ °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board – FR4, size 1″ x 1″ x 0.062″, double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
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11
AP4511GH
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