VBsemi-Elec-BSC12DN20NS3-G-VB
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BSC12DN20NS3 G
N-Channel 200 V (D-S) MOSFET
FEATURES
• ThunderFET
®
technology optimizes balance
of R
DS(on)
, Q
g
, Q
sw
and Q
oss
PRODUCT SUMMARY
V
DS
(V)
200
0.038
0.043
20
R
DS(on)
Typ. (
) at V
GS
= 10 V
R
DS(on)
Typ. (
) at V
GS
= 7.5 V
Q
g
typ. (nC)
• 100 % R
g
and UIS tested
APPLICATIONS
I
D
(A)
30
Configuration
Single
• Fixed telecom
• DC/DC converter
D
• Primary and secondary side switch
• Synchronous rectification
• LED lighting
DFN5X6
Top View
Bottom View
G
• Power supplies
• Class D amplifier
Top View
S
N-Channel MOSFET
PIN1
1
8
2
3
7
6
4
5
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
200
20
UNIT
Drain-source voltage
Gate-source voltage
V
DS
V
GS
V
T
C
= 25 °C
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
30
23
7.6
b, c
5.9
b, c
70
30
5.6
b, c
30
45
T
Continuous drain current (T
J
= 150 °C)
I
D
A
Pulsed drain current (t = 100 μs)
I
DM
I
S
T
C
= 25 °C
Continuous source-drain diode current
T
A
= 25 °C
L = 0.1 mH
T
C
= 25 °C
Single pulse avalanche current
Single pulse avalanche energy
I
AS
E
AS
mJ
W
104
T
C
= 70 °C
66.6
6.25
b, c
4
b, c
-55 to +150
260
Maximum power dissipation
P
D
T
A
= 25 °C
T
A
= 70 °C
Operating junction and storage temperature range
Soldering recommendations (peak temperature)
c
T
J
, T
stg
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum junction-to-ambient
b
SYMBOL
R
thJA
TYPICAL
15
MAXIMUM
UNIT
t
10 s
Steady state
20
°C/W
Maximum junction-to-case (drain)
R
thJC
0.9
1.2
Notes
a. Package
limited.
b. Surface mounted on 1″ x 1″ FR4 board.
c. t = 10 s.
X
x
d. The
DFN5 6X
is a leadless package.
The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process
in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
solder interconnection.
required to ensure adequate bottom side
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum
under steady state conditions is 54 °C/W.
g. T
C
= 25 °C.
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1
BSC12DN20NS3 G
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-source breakdown voltage
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
V
GS
= 0 V, I
D
= 250 μA
I
D
= 10 mA
200
–
–
–
V
V
DS
temperature coefficient
–
–
173
-7.1
mV/°C
V
GS(th)
temperature coefficient
Gate-source threshold voltage
Gate-source leakage
I
D
= 250 μA
–
4.0
100
1
V
DS
= V
GS
, I
D
= 250 μA
2.0
–
I
GSS
V
DS
= 0 V, V
GS
=
20 V
–
nA
μA
A
V
DS
= 200 V, V
GS
= 0 V
V
DS
= 200 V, V
GS
= 0 V, T
J
= 70 °C
V
DS
10 V, V
GS
=10 V
–
–
Zero gate voltage drain current
On-state drain current
a
I
DSS
I
D(on)
R
DS(on)
g
fs
–
–
15
–
30
–
–
V
GS
=10 V, I
D
= 10 A
0.038
0.043
27
–
Drain-source on-state resistance
a
V
GS
= 7.5 V, I
D
= 10 A
–
–
Forward transconductance
a
Dynamic
b
V
DS
= 15 V, I
D
= 10 A
–
–
S
Input capacitance
C
iss
C
oss
C
rss
–
–
1380
142
11
–
Output capacitance
Reverse transfer capacitance
V
DS
= 100 V, V
GS
= 0 V, f = 1 MHz
V
DS
= 100 V, V
GS
= 10 V, I
D
= 10 A
–
pF
–
–
–
25
38
30
–
Total gate charge
Q
g
–
20
Gate-source charge
Gate-drain charge
Q
gs
Q
gd
Q
oss
R
g
V
DS
= 100 V, V
GS
= 7.5 V, I
D
= 10 A
–
6.4
6.8
52
nC
–
–
Output charge
V
DS
= 100 V, V
GS
= 0 V
f = 1 MHz
–
–
Gate resistance
0.6
–
2.1
9
4
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
18
40
40
48
22
54
36
48
Rise time
–
20
V
DD
= 100 V, R
L
= 10
, I
D
10 A,
V
GEN
= 10 V, R
g
= 1
Turn-off delay time
–
20
Fall time
–
24
ns
Turn-on delay time
–
11
Rise time
–
27
V
DD
= 100 V, R
L
= 10
, I
D
10 A,
V
GEN
= 7.5 V, R
g
= 1
Turn-off delay time
–
18
Fall time
–
24
Drain-Source Body Diode Characteristics
Continuous source-drain diode current
Pulse diode forward current
Body diode voltage
I
S
I
SM
V
SD
t
rr
T
C
= 25 °C
–
–
–
–
–
–
–
–
35.4
80
A
–
I
S
= 5 A, V
GS
= 0 V
0.77
100
400
80
1.1
200
800
–
V
Body diode reverse recovery time
Body diode reverse recovery charge
Reverse recovery fall time
Reverse recovery rise time
ns
nC
Q
rr
t
a
I
F
= 10 A, dI/dt = 100 A/μs, T
J
= 25 °C
ns
t
b
20
–
Notes
a. Pulse
test; pulse width
300 μs, duty cycle
2 %.
b. Guaranteed
by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
服务热线：400-655-8788
2
BSC12DN20NS3 G
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Axis Title
Axis Title
150
120
90
60
30
0
10000
1000
100
80
64
48
32
16
0
10000
1000
100
V
GS
= 10 V thru 7 V
V
GS
= 6 V
T
C
= 25 °C
V
GS
= 5 V
V
GS
= 4 V
T
C
= 125 °C
T
C
= -55 °C
6
10
10
10
0
3
6
9
12
15
0
2
4
8
V
DS
– Drain-to-Source Voltage (V)
2nd line
V
GS
– Gate-to-Source Voltage (V)
2nd line
Output Characteristics
Transfer Characteristics
Axis Title
Axis Title
0.055
0.050
0.045
0.040
10000
3000
2400
1800
1200
600
10000
1000
100
V
GS
= 7.5 V
1000
100
C
iss
V
GS
= 10 V
C
oss
0.035
0.030
C
rss
10
0
10
0
16
32
48
64
80
0
20
40
60
80
100
I
D
– Drain Current (A)
2nd line
V
DS
– Drain-to-Source Voltage (V)
2nd line
On-Resistance vs. Drain Current and Gate Volta
g
e
Capacitance
Axis Title
Axis Title
10
8
10000
1000
100
3.0
2.5
2.0
1.5
1.0
0.5
10000
1000
I
D
= 10 A
I
D
= 10 A
V
GS
= 10 V
V
DS
= 50 V, 100 V, 150 V
6
4
V
GS
= 7.5 V
100
10
2
0
10
0
5
10
15
20
25
-50 -25
0
25
50
75 100
125 150
Q
g
– Total Gate Charge (nC)
2nd line
T
J
– Junction Temperature (°C)
2nd line
Gate Char
g
e
On-Resistance vs. Junction Temperature
服务热线：400-655-8788
3
BSC12DN20NS3 G
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Axis Title
Axis Title
100
10
10000
1000
100
0.5
0.1
10000
1000
T
J
= 150 °C
I
D
= 5 mA
1
-0.3
-0.7
-1.1
-1.5
T
J
= 25 °C
0.1
100
10
I
D
= 250 μA
0.01
0.001
10
0
0.2
0.4
0.6
0.8
1.0
1.2
-50 -25
0
25
50
75 100
125 150
V
SD
– Source-to-Drain Voltage (V)
2nd line
T
J
– Temperature (°C)
2nd line
Source-Drain Diode Forward Volta
g
e
Threshold Volta
g
e
Axis Title
Axis Title
I
D
= 10 A
300
240
180
120
60
10000
1000
100
0.15
0.12
0.09
0.06
0.03
0
10000
1000
100
T
J
= 125 °C
T
J
= 25 °C
0
10
10
3
4
5
6
7
8
9
10
0.001
0.01
0.1
1
10
V
GS
– Gate-to-Source Voltage (V)
2nd line
Time (s)
2nd line
On-Resistance vs. Gate-to-Source Volta
g
e
Sin
g
le Pulse Power, Junction-to-Ambient
Axis Title
100
10000
100 μs
I
DM
limited
10
1
1 ms
1000
I
D
limited
10 ms
100 ms
100
(1)
Limited by R
DS(on)
0.1
0.01
1 s
T
C
= 25 °C
10 s
DC
Single pulse
BVDSS limited
10
0.01
0.1
V
DS
– Drain-to-Source Voltage (V)
> minimum V
GS
at which R
DS(on)
is specified
1
10
100
1000
(1)
V
GS
Safe Operatin
g
Area, Junction-to-Ambient
服务热线：400-655-8788
4
BSC12DN20NS3 G
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Axis Title
40
10000
1000
100
32
24
16
8
0
10
0
25
50
75
100
125
150
T
C
– Case Temperature (°C)
2nd line
Current Deratin
g
a
Axis Title
Axis Title
125
100
75
50
25
0
10000
1000
100
3.0
2.4
1.8
1.2
0.6
0
10000
1000
100
10
10
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
C
– Case Temperature (°C)
2nd line
T
A
– Ambient Temperature (°C)
2nd line
Power, Junction-to-Case
Power, Junction-to-Ambient
Note
a. The
power dissipation P
D
is based on T
J
max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
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BSC12DN20NS3 G
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Axis Title
1
10000
1000
100
Duty Cycle = 0.5
0.2
Notes:
P
DM
0.1
0.1
t
1
t
2
1. Duty cycle, D =
t
1
t
2
0.05
2. Per unit base = R
thJA
= 54 °C/W
(t)
3. T
JM
– T
A
= P
DM
Z
thJA
Single pulse
0.1
0.02
4. Surface mounted
0.01
0.0001
10
1000
0.001
0.01
1
10
100
Square Wave Pulse Duration (s)
2nd line
Normalized Thermal Transient Impedance, Junction-to-Ambient
Axis Title
1
10000
1000
100
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.1
Single pulse
0.01
0.0001
10
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
2nd line
Normalized Thermal Transient Impedance, Junction-to-Case
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6
BSC12DN20NS3 G
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T
aiwan VBsemi”), assumes no responsibility for any errors, inaccuracies or
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any goods or continuous production.
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t
he maximum extent permitted by applicable law on
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aiwan VBsemi
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application of the general product VBsemi
T
aiwan demand that the Taiwan VBsemi of. Statement on whether the
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Parameter data sheets and technical specifications can be provided may vary depending on the application and
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technical experts validated for each customer application. Product specifications do not expand or modify
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aiwan
VBsemi purchasing terms and conditions, including but not limited to warranty herein.
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aiwan VBsemi products are not intended for use in medical, life saving,
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aiwan VBsemi people who are related to product design applications and
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