VBsemi-Elec-CEP13N10L-VB
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CEP13N10L
N-Channel 100-V (D-S)
MOSFET
FEATURES
PRODUCT SUMMARY
•
•
•
•
TrenchFET
®
Power MOSFET
V
(BR)DSS
(V)
R
DS(on)
(
Ω
)
I
D
(A)
175 °C Junction Temperature
Low Thermal Resistance Package
100 % R
g
Tested
RoHS
0.
127
at V
GS
= 10 V
100
18
COMPLIANT
APPLICATIONS
Isolated DC/DC Converters
•
TO-220AB
D
G
S
G D
S
N-Channel MOSFET
Top View
ABSOLUTE MAXIMUM RATINGS
T =
25 °C, unless otherwise noted
C
Parameter
Symbol
Limit
100
Unit
V
DS
Drain-Source Voltage
Gate-Source Voltage
V
V
GS
± 20
T
C
= 25 °C
18
Continuous Drain Current (T
J
= 175 °C)
I
D
T
C
= 125 °C
15
A
I
DM
I
AS
Pulsed Drain Current
68
Avalanche Current
Single Pulse Avalanche Energy
b
18
L = 0.1 mH
E
AS
200
mJ
W
T
C
= 25 °C
T
A
= 25 °C
d
105
3.75
Maximum Power Dissipation
b
P
D
T
J
, T
stg
Operating Junction and Storage
T
e
mperature Range
– 55 to 175
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limit
40
Unit
PCB Mount (TO-263)
d
R
thJA
Junction-to-Ambient
°C/W
R
thJC
Junction-to-Case (Drain)
0.4
Notes:
a. Package limited.
b. Duty cycle
≤
1 %.
c. See SOA curve for voltage derating.
d. When Mounted on 1″ square PCB (FR-4 material).
服务热线：400-655-8788
1
CEP13N10L
SPECIFICATIONS
T =
25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
V
(BR)DSS
V
GS(th)
I
GSS
V
DS
= 0
V
,
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
Drain-Source Breakdown Voltage
100
2
V
Gate-Threshold Voltage
Gate-Body Leakage
4
± 100
1
V
DS
= 0
V
,
V
GS
= ± 20 V
nA
V
DS
= 100
V
,
V
GS
= 0 V
I
DSS
I
D(on)
r
DS(on)
g
fs
V
DS
= 100
V
,
V
GS
= 0
V
,
T
J
= 125 °C
Zero Gate Voltage Drain Current
On-State Drain Current
a
50
µA
A
V
DS
= 100
V
,
V
GS
= 0
V
,
T
J
= 175 °C
V
DS
≥
5
V
,
V
GS
= 10 V
250
120
25
V
GS
= 10
V
,
I
D
= 20 A
0.127
0.
130
0.
170
Drain-Source On-State Resistance
a
V
GS
= 10
V
,
I
D
= 20 A, T
J
= 125 °C
Ω
S
V
GS
= 10
V
,
I
D
= 20 A, T
J
= 175 °C
V
DS
= 15
V
,
I
D
= 20 A
Forward
T
r
ansconductance
a
Dynamic
b
C
iss
C
oss
C
rss
Q
g
Input Capacitance
1
3
0
0
260
V
GS
= 0
V
,
V
DS
= 25
V
, f = 1
M
Hz
V
DS
= 100
V
,
V
GS
= 10
V
,
I
D
= 65 A
Output Capacitance
Reverse
T
r
ansfer Capacitance
pF
110
T
o
tal Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Gate Resistance
T
u
rn-On Delay Time
c
Rise Time
c
28
Q
gs
Q
gd
R
g
nC
4.8
15
0.5
1.7
8
3.3
Ω
t
d(on)
t
r
t
d(off)
t
f
120
25
50
V
DD
= 100
V
,
R
L
= 1.5
Ω
ns
T
u
rn-Off Delay Time
c
Fall Time
c
I
D
≅
65 A, V
GEN
= 10
V
,
R
g
= 2.5
Ω
Source-Drain Diode Ratings and Characteristics
T
C
= 25 °C
b
I
S
I
SM
Continuous Current
18
68
A
Pulsed Current
Forward Voltage
a
V
SD
t
rr
I
F
= 65 A, V
GS
= 0 V
1.0
130
8
1.5
200
12
V
ns
A
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
I
RM(REC)
Q
rr
I
F
= 50 A, di/dt = 100 A/µs
0.52
1.2
µC
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
服务热线：400-655-8788
2
CEP13N10L
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
70
140
120
100
80
V
GS
= 10 thru 6 V
5 V
60
50
40
30
20
10
0
60
T
= 125 °C
40
C
3 V
2 V
25 °C
3
20
– 55 °C
0
0
2
4
6
8
10
0
1
2
4
5
6
7
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
180
150
120
90
0.40
0.30
0.20
0.10
0.00
T
= – 55 °C
25 °C
C
125 °C
V
GS
= 10 V
60
30
0
0
20
40
60
80
100
120
0
20
40
60
80
100
120
I
D
– Drain Current (A)
I
D
– Drain Current (A)
Transconductance
On-Resistance vs. Drain Current
1400
1200
1000
800
600
400
200
0
20
16
12
8
V
= 100 V
= 65 A
DS
I
D
C
iss
4
C
rss
C
oss
0
120
100
60
80
20
0
40
0
25
50
75
100
125
150
V
DS
– Drain-to-Source Voltage (V)
Q
– Total Gate Charge (nC)
g
Capacitance
Gate Charge
服务热线：400-655-8788
3
CEP13N10L
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
3.0
100
10
1
V
= 10 V
= 20 A
GS
I
D
2.5
2.0
1.5
1.0
0.5
0.0
T =
150 °C
J
T =
25 °C
J
– 50
– 25
0
25
50
75 100
125 150 175
0
0.3
0.6
0.9
1.2
T –
Junction Temperature
(
°
C)
J
V
SD
– Source-to-Drain Voltage (V)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
1000
100
240
230
220
210
200
190
180
I
D
= 1.0 mA
I
(A) at T
= 25 °C
A
AV
10
1
I
AV
(A) at T
= 150 °C
A
0.1
– 50
– 25
0
25
50
75 100
125 150 175
0.00001
0.0001
0.001
0.01
0.1
1
t
in
(s)
T –
Junction Temperature (°C)
J
Drain Source Breakdown
vs. Junction Temperature
Avalanche Current vs. Time
服务热线：400-655-8788
4
CEP13N10L
THERMAL RATINGS
1000
75
r
DS(on)
Limited*
60
45
30
15
0
10 µs
100
10
100 µs
1 ms
10 ms
100 ms
DC
1
T
= 25 °C
C
Single Pulse
0.1
0
25
50
75
100
125
150
175
0.1
1
10
100
1000
V
DS
– Drain-to-Source Voltage (V)
T
– Ambient Temperature
(
°
C)
C
* V
>
minimum V
at which r
is specified
GS
GS
DS(on)
Maximum Avalanche and Drain Current
vs. Case Temperature
Safe Operating Area
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
–
4
–
3
10
–
2
10
–
1
10
10
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
服务热线：400-655-8788
5
CEP13N10L
TO-220AB
MILLIMETERS
MIN.
INCHES
A
E
DIM.
MAX.
4.65
1.01
1.73
0.61
15.49
10.51
2.67
5.28
1.40
6.48
2.92
14.02
3.82
3.94
3.00
MIN.
0.167
0.027
0.047
0.014
0.585
0.395
0.095
0.192
0.045
0.240
0.095
0.526
0.131
0.139
0.102
MAX.
0.183
0.040
0.068
0.024
0.610
0.414
0.105
0.208
0.055
0.255
0.115
0.552
0.150
0.155
0.118
F
A
b
4.25
0.69
1.20
0.36
14.85
10.04
2.41
4.88
1.14
6.09
2.41
13.35
3.32
3.54
2.60
Ø P
b(1)
c
D
E
e
e(1)
F
H(1)
J(1)
L
1
3
2
L(1)
Ø P
Q
*
M
b(1)
ECN: X12-0208-Rev. N, 08-Oct-12
DWG: 5471
Notes
* M = 1.32 mm to 1.62 mm (dimension including protrusion)
Heatsink hole for HVM
C
b
e
J(1)
e(1)
服务热线：400-655-8788
6
CEP13N10L
Disclaimer
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data are subject to change without notice.
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representatives (collectively, the “
T
aiwan VBsemi”), assumes no responsibility for any errors, inaccuracies or
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any goods or continuous production.
T
o
t
he maximum extent permitted by applicable law on
T
aiwan VBsemi
relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability,
including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties,
including a particular purpose, non-infringement and merchantability guarantee.
Statement on certain types of applications are based on knowledge of the product is often used in a typical
application of the general product VBsemi
T
aiwan demand that the Taiwan VBsemi of. Statement on whether the
product is suitable for a particular application is non-binding. It is the customer’s responsibility to verify specific
product features in the products described in the specification is appropriate for use in a particular application.
Parameter data sheets and technical specifications can be provided may vary depending on the application and
performance over time. All operating parameters, including typical parameters must be made by customer’s
technical experts validated for each customer application. Product specifications do not expand or modify
T
aiwan
VBsemi purchasing terms and conditions, including but not limited to warranty herein.
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aiwan VBsemi products are not intended for use in medical, life saving,
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RoHS compliant and meets the definition of restrictions under Directive of the European Parliament
2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and
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Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We
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7
