VBsemi-Elec-CSD17304Q3-VB
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CSD17304Q3
N-Channel 30 V (D-S) MOSFET
FEATURES
•
Halogen-free According to IEC 61249-2-21
PRODUCT SUMMARY
Definition
V
DS
(V)
R
DS(on)
(
) Typ.
Q
g
(Typ.)
I
D
(A)
•
•
•
TrenchFET
®
Power MOSFET
100 % R
g
and UIS Tested
Compliant to RoHS Directive 2002/95/EC
0.004 at V
GS
= 4.5 V
0.005 at
V
GS
= 2.5 V
6
0
30
33.5 nC
50
APPLICATIONS
•
•
•
•
Motor Control
Industrial
Load Switch
ORing
DFN 3×3 EP
D
Bottom View
Top View
Top View
1
8
2
3
7
6
G
4
5
S
Pin 1
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(T =
25 °C, unless otherwise noted)
A
Parameter
Symbol
Limit
Unit
V
DS
V
GS
Drain-Source Voltage
Gate-Source Voltage
30
20
V
6
0
a, e
T
C
= 25 °C
40
a, e
T
T
C
= 70 °C
A
= 25 °C
I
D
Continuous Drain Current (T
J
= 150 °C)
22
b, c
15
b, c
150
T
A
= 70 °C
A
I
DM
I
S
Pulsed Drain Current (t = 300 µs)
T
C
= 25 °C
35
Continuous Source-Drain Diode Current
3.3
b, c
20
T
A
= 25 °C
I
AS
E
AS
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
mJ
W
20
52
33
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
P
D
Maximum Power Dissipation
3.7
b, c
2.4
b, c
– 55 to 150
260
T
J
, T
stg
Operating Junction and Storage
T
e
mperature Range
Soldering Recommendations (Peak
T
e
mperature)
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
R
thJA
R
thJC
Typical
24
Maximum
Unit
Maximum Junction-to-Ambient
b, d
Maximum Junction-to-Case (Drain)
t
10 s
Steady State
33
°C/W
1.9
2.4
Notes:
a. Based on T
C
= 25 °C.
b. Surface mounted on 1″ x 1″ FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 90 °C/W.
e. Calculated based on maximum junction temperature. Package limitation current is
8
0 A.
服务热线：400-655-8788
1
CSD17304Q3
SPECIFICATIONS
(T =
25 °C, unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
V
GS
= 0
V
,
I
D
= 250 µA
I
D
= 250 µA
Drain-Source Breakdown Voltage
V
DS
T
e
mperature Coefficient
V
GS(th)
T
e
mperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
30
V
30
mV/°C
– 5.6
V
DS
= V
GS
, I
D
= 250 µA
0.5
30
1.5
100
1
V
I
GSS
V
DS
= 0
V
,
V
GS
=
20 V
nA
V
DS
= 30
V
,
V
GS
= 0 V
DS
= 30
V
,
V
GS
= 0
V
,
T
J
= 55 °C
V
DS
5
V
,
V
GS
= 10 V
V
GS
4.5 V, I
D
= 10 A
V
GS
2.5 V,
I
D
= 7 A
I
DSS
I
D(on)
R
DS(on)
g
fs
Zero Gate Voltage Drain Current
On-State Drain Current
a
µA
A
V
10
0.0040
0.0050
65
Drain-Source On-State Resistance
a
S
Forward
T
r
ansconductance
a
V
DS
= 15
V
,
I
D
= 10 A
Dynamic
b
C
iss
C
oss
C
rss
Input Capacitance
6000
406
360
68
V
DS
= 15
V
,
V
GS
= 0
V
, f = 1
M
Hz
Output Capacitance
pF
Reverse
T
r
ansfer Capacitance
V
DS
= 15
V
,
V
GS
= 10
V
,
I
D
= 10 A
102
51
Q
g
T
o
tal Gate Charge
33.5
7.7
13.8
0.7
24
nC
Q
gs
Q
gd
R
g
Gate-Source Charge
V
DS
= 15
V
,
V
GS
= 4.5
V
,
I
D
= 10 A
f = 1 MHz
Gate-Drain Charge
Gate Resistance
0.3
1.4
45
45
60
24
28
26
60
16
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
T
u
rn-On Delay Time
Rise Time
24
V
DD
= 15
V
,
R
L
= 1.5
I
D
10 A, V
GEN
= 4.5
V
,
R
g
= 1
T
u
rn-Off Delay Time
32
Fall Time
12
ns
T
u
rn-On Delay Time
14
Rise Time
13
V
DD
= 15
V
,
R
L
= 1.5
I
D
10 A, V
GEN
= 10
V
,
R
g
= 1
T
u
rn-Off Delay Time
33
Fall Time
8
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
I
S
I
SM
V
SD
t
rr
T
C
= 25 °C
35
70
0.7
21
10
9
A
I
S
= 3 A, V
GS
0 V
1.1
40
20
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ns
nC
Q
rr
t
a
I
F
= 10 A, dI/dt = 100 A/µs, T
J
= 25 °C
ns
t
b
12
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
服务热线：400-655-8788
2
CSD17304Q3
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
70
56
42
28
14
10
V
GS
= 10 V thru 4 V
8
6
V
GS
= 3 V
T
C
= 25
°
C
4
V
GS
= 2 V
2
T
C
= – 55
°
C
T
C
= 125
°
C
0
0
6.0
0
0.5
1
1.5
2
2.5
0
3.0
4.5
1.5
7.5
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.0120
0.0100
0.0080
0.0060
0.0040
0.0020
4500
3600
2700
1800
900
C
iss
V
GS
= 4.5 V
V
GS
= 10 V
C
oss
C
rss
0
0
12
24
36
48
60
0
5
10
15
20
25
30
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
10
1.8
I
D
= 10 A
I
D
= 10 A
1.6
1.4
1.2
1.0
0.8
0.6
8
V
GS
= 10 V
V
DS
= 15 V
6
V
DS
= 10 V
V
GS
= 4.5 V
V
DS
= 20 V
4
2
0
– 50
– 25
0
25
50
75
100
125
150
0
14
28
42
56
70
Q
g
– Total Gate Charge (nC)
T
J
– Junction Temperature (
°
C)
Gate Charge
On-Resistance vs. Junction Temperature
服务热线：400-655-8788
3
CSD17304Q3
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
0.015
0.012
0.009
0.006
0.003
0.000
100
I
D
= 10 A
10
T
J
= 150
°
C
T
J
= 25 °C
1
0.1
T
J
= 125
°
C
0.01
0.001
T
J
= 25
°
C
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.4
0.2
100
80
60
40
20
0
0
I
D
= 5 mA
– 0.2
– 0.4
– 0.6
– 0.8
I
D
= 250 μA
– 50
– 25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
100
T
J
– Temperature (
°
C)
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
I
DM
Limited
I
D
Limited
100 μs
10
1
1 ms
Limited by R
DS(on)
*
10 ms
100 ms
1 s
0.1
0.01
10 s
T
A
= 25
°
C
DC
Single Pulse
BVDSS Limited
10
0.01
0.1
1
100
V
DS
– Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
服务热线：400-655-8788
4
CSD17304Q3
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
80
60
40
20
0
Limited by Package
0
25
50
75
100
125
150
T
C
– Case Temperature (
°
C)
Current Derating*
65
52
39
26
13
0
2.0
1.6
1.2
0.8
0.4
0.0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
C
– Case Temperature (°C)
T
A
– Ambient Temperature (°C)
Power, Junction-to-Case
Power, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max.)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
服务热线：400-655-8788
5
CSD17304Q3
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
P
DM
0.05
0.02
t
1
t
2
t
1
1. Duty Cycle, D =
t
2
2. Per Unit Base = R
= 81 °C/W
thJA
(t)
3. T
– T
= P
JM
Z
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.1
Single Pulse
0.01
0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
服务热线：400-655-8788
6
CSD17304Q3
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data are subject to change without notice.
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T
aiwan VBsemi”), assumes no responsibility for any errors, inaccuracies or
incomplete data contained in the table or any other any disclosure of any information related to the
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any goods or continuous production.
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t
he maximum extent permitted by applicable law on
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aiwan VBsemi
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including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties,
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application of the general product VBsemi
T
aiwan demand that the Taiwan VBsemi of. Statement on whether the
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product features in the products described in the specification is appropriate for use in a particular application.
Parameter data sheets and technical specifications can be provided may vary depending on the application and
performance over time. All operating parameters, including typical parameters must be made by customer’s
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aiwan
VBsemi purchasing terms and conditions, including but not limited to warranty herein.
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oHS compliant and meets the definition of restrictions under Directive of the European Parliament
2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and
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Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We
confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive
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halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese
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