VBsemi-Elec-D4184A-VB
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D4184A
N-Channel 40-V (D-S) MOSFET
FEATURES
•
PRODUCT SUMMARY
TrenchFET
®
Power MOSFET
V
DS
(V)
R
DS(on)
(
Ω
)
Q
g
(Typ.)
I
D
(A)
a, c
85
•
100 % R
g
and UIS Tested
RoHS
0.0050 at V
GS
= 10 V
0.00
65
at V
GS
= 4.5 V
COMPLIANT
4
0
80 nC
70
APPLICATIONS
•
Synchronous Rectification
•
Power Supplies
D
TO-252
G
G
D
S
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
T =
25 °C, unless otherwise noted
A
Parameter
Symbol
Limit
4
0
Unit
V
DS
Drain-Source Voltage
Gate-Source Voltage
V
V
GS
± 2
5
8
5
a, c
T
C
= 25 °C
C
= 70 °C
c
T
70
Continuous Drain Current (T
J
= 175 °C)
I
D
59
b
T
A
= 25 °C
T
A
= 70 °C
A
53
b
250
80
I
DM
I
AS
Pulsed Drain Current
Avalanche Current Pulse
Single Pulse Avalanche Energy
L = 0.1 mH
E
AS
320
mJ
110
a, c
2.6
b
T
C
= 25 °C
A
= 25 °C
I
S
Continuous Source-Drain Diode Current
A
T
312
a
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
200
P
D
Maximum Power Dissipation
W
3.13
b
2.0
b
T
J
, T
stg
Operating Junction and Storage
T
e
mperature Range
– 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
b
Maximum Junction-to-Case
Symbol
R
thJA
Typical
Maximum
Unit
Steady State
Steady State
32
40
°C/W
R
thJC
0.33
0.4
Notes:
a. Based on T
C
= 25 °C.
b. Surface Mounted on 1″ x 1″ FR4 board.
c. Calculated based on maximum junction temperature. Package limitation current is 110 A.
服务热线:400-655-8788
1
D4184A
SPECIFICATIONS
T =
25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
V
DS
Δ
V
DS
/T
J
Δ
V
GS(th)
/T
J
V
GS(th)
V
GS
= 0
V
,
I
D
= 250 µA
I
D
= 250 µA
Drain-Source Breakdown Voltage
40
V
V
DS
T
e
mperature Coefficient
41
– 8
mV/°C
V
GS(th)
T
e
mperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0
V
,
V
GS
= ± 20 V
V
DS
= 40
V
,
V
GS
= 0 V
DS
= 40
V
,
V
GS
= 0
V
,
T
J
= 55 °C
V
DS
≥
5
V
,
V
GS
= 10 V
V
GS
= 10
V
,
I
D
= 30 A
1.2
2.5
± 100
1
V
I
GSS
nA
I
DSS
I
D(on)
R
DS(on)
g
fs
Zero Gate Voltage Drain Current
On-State Drain Current
a
µA
A
V
10
120
0.0050
0.0065
180
Drain-Source On-State Resistance
a
Ω
S
V
GS
= 4.5
V
,
I
D
= 20 A
V
DS
= 15
V
,
I
D
= 30 A
Forward
T
r
ansconductance
a
Dynamic
b
C
iss
C
oss
C
rss
Q
g
Input Capacitance
2380
550
250
80
V
DS
= 20
V
,
V
GS
= 0
V
, f = 1
M
Hz
Output Capacitance
pF
Reverse
T
r
ansfer Capacitance
T
o
tal Gate Charge
120
Q
gs
Q
gd
R
g
V
DS
= 20
V
,
V
GS
= 10
V
,
I
D
= 20 A
f = 1 MHz
Gate-Source Charge
Gate-Drain Charge
20
nC
12
Gate Resistance
0.85
20
1.3
30
Ω
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
T
u
rn-On Delay Time
Rise Time
11
17
V
DD
= 20
V
,
R
L
= 1.0
Ω
I
D
≅
20 A, V
GEN
= 10
V
,
R
g
= 1
Ω
T
u
rn-Off Delay Time
77
115
15
Fall Time
10
ns
T
u
rn-On Delay Time
102
62
155
95
Rise Time
V
DD
= 20
V
,
R
L
= 1.0
Ω
I
D
≅
20 A, V
GEN
= 4.5
V
,
R
g
= 1
Ω
T
u
rn-Off Delay Time
180
60
270
90
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
a
Body Diode Voltage
I
S
I
SM
V
SD
t
rr
T
C
= 25 °C
I
S
= 20 A
110
200
1.2
75
A
0.8
50
70
30
20
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ns
nC
Q
rr
t
a
105
I
F
= 20 A, di/dt = 100 A/µs, T
J
= 25 °C
ns
t
b
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
服务热线:400-655-8788
2
D4184A
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
250
5
4
3
2
1
0
V
= 10 thr
u
5
V
GS
200
150
100
50
T
= 125 °C
= 25 °C
C
V
= 4
V
GS
T
V
GS
= 3
V
C
T
C
= – 55 °C
0
0.0
0.5
1.0
1.5
2.0
2.5
0
1
2
3
4
V
DS
– Drain-to-So
u
rce
V
oltage (
V
)
V
GS
– G
a t e – t o – S o
u
rce
V
oltage (
V
)
Output Characteristics
Transfer Characteristics
400
320
240
160
8
0
0.01
0
0.00
8
0.00
6
0.00
4
0.00
2
T
C
= – 55 °C
V
= 4.5
V
GS
T
C
= 25 °C
T
C
= 125 °C
V
GS
= 10
V
0.0000
0
0
20
40
60
8
0
100
120
0
15
30
45
60
75
90
I
– Drain C
u
rrent (A)
D
I
– Drain C
u
rrent (A)
D
Transconductance
On-Resistance vs. Drain Current
3000
10
8
I
= 20 A
D
C
iss
V
DS
= 20
V
2000
1000
0
6
V
DS
= 10
V
V
DS
= 30
V
4
2
C
oss
C
rss
0
0
10
DS
20
30
40
0
50
100
150
200
250
V
– Drain-to-So
u
rce
V
oltage (
V
)
Q
g
–
T
o
tal Gate Charge (nC)
Capacitance
Gate Charge
服务热线:400-655-8788
3
D4184A
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
2.0
100
10
1
I
= 30 A
D
1.7
1.4
1.1
0.
8
0.5
V
GS
= 10
V
T
J
= 150 °C
T
J
= 25 °C
V
GS
= 4.5
V
0.1
0.01
0.001
0.0
0.2
0.4
0.6
0.
8
1.0
1.2
– 50
– 25
0
25
50
75
100 125 150
V
SD
– So
u
rce-to-Drain
V
oltage (
V
)
T
J
– J
u
nction
T
e
mperat
u
re (°C)
On-Resistance vs. Junction Temperature
Forward Diode Voltage vs. Temperature
0.6
0.2
0.010
0.00
8
0.006
0.004
0.002
0.000
– 0.2
– 0.6
– 1.0
I
= 5 mA
D
T
= 150 °C
J
I
= 250
µ
A
D
T
= 25 °C
J
– 50
– 25
0
25
50
75
100 125 150
0
2
4
6
8
10
T
J
–
T
e
mperat
u
re (°C)
V
GS
– Gate-to-So
u
rce
V
oltage (
V
)
Threshold Voltage
On-Resistance vs. Gate-to-Source Voltage
1000
Limited
b
y R
*
DS(on)
10
µ
s
100
µ
s
100
10
1 ms
10 ms
100 ms, DC
1
0.1
0.01
T
= 25 °C
C
Single P
u
lse
B
V
DSS
0.1
1
10
100
V
DS
– Drain-to-So
u
rce
V
oltage (
V
)
*
V
> minim
u
m
V
at
w
hich R
is specified
DS(on)
GS
GS
Safe Operating Area, Junction-to-Ambient
服务热线:400-655-8788
4
D4184A
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
350
400
350
300
250
200
150
100
50
2
8
0
210
140
70
0
Package Limited
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
J
– J
u
nction to Case (°C)
T
J
– J
u
nction to Case (°C)
Current Derating*
Power Derating
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
1
D
u
ty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single P
u
lse
0.01
-4
-3
-2
-1
10
10
10
10
1
Sq
u
are
W
a
v
e P
u
lse D
u
ration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
服务热线:400-655-8788
5
D4184A
TO-252AA CASE OUTLINE
E
A
MILLIMETERS
INCHES
C2
b3
DIM.
A
MIN.
MAX.
2.38
0.127
0.88
1.14
5.46
0.61
0.89
6.22
–
MIN.
MAX.
0.094
0.005
0.035
0.045
0.215
0.024
0.035
0.245
–
2.18
–
0.086
–
A1
b
0.64
0.76
4.95
0.46
0.46
5.97
5.21
6.35
4.32
9.40
0.025
0.030
0.195
0.018
0.018
0.235
0.205
0.250
0.170
0.370
b2
b3
C
C2
D
D1
E
6.73
–
0.265
–
E1
H
b
C
b2
e
10.41
0.410
A1
e1
e
2.28 BSC
4.56 BSC
1.40
0.090 BSC
0.180 BSC
e1
L
1.78
1.27
1.02
1.52
0.055
0.070
0.050
0.040
0.060
L3
L4
L5
0.89
–
0.035
–
1.14
0.045
ECN:
X12-0247
-Rev. M, 24-Dec-12
DWG: 5347
E1
Note
Dimension L3 is for reference only.
•
服务热线:400-655-8788
6
D4184A
RECOMMENDED MINIMUM
P
A
DS FOR D
P
A
K (TO-252)
0.224
(5.690)
0.180
0.055
(4.572)
(1.397)
Recommended Minimum Pads
Dimensions in Inches/(mm)
服务热线:400-655-8788
7
D4184A
Disclaimer
All products due to improve reliability, function or design or for other reasons, product specifications and
data are subject to change without notice.
Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their
representatives (collectively, the “
T
aiwan VBsemi”), assumes no responsibility for any errors, inaccuracies or
incomplete data contained in the table or any other any disclosure of any information related to the
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any goods or continuous production.
T
o
t
he maximum extent permitted by applicable law on
T
aiwan VBsemi
relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability,
including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties,
including a particular purpose, non-infringement and merchantability guarantee.
Statement on certain types of applications are based on knowledge of the product is often used in a typical
application of the general product VBsemi
T
aiwan demand that the Taiwan VBsemi of. Statement on whether the
product is suitable for a particular application is non-binding. It is the customer’s responsibility to verify specific
product features in the products described in the specification is appropriate for use in a particular application.
Parameter data sheets and technical specifications can be provided may vary depending on the application and
performance over time. All operating parameters, including typical parameters must be made by customer’s
technical experts validated for each customer application. Product specifications do not expand or modify
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aiwan
VBsemi purchasing terms and conditions, including but not limited to warranty herein.
Unless expressly stated in writing,
T
aiwan VBsemi products are not intended for use in medical, life saving,
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aiwan VBsemi such applications using client did not express their
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aiwan VBsemi people who are related to product design applications and
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Material Category Policy
Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be
RoHS compliant and meets the definition of restrictions under Directive of the European Parliament
2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and
electronic equipment (EEE) – modification, unless otherwise specified as
inconsistent.(www.VBsemi.com)
Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We
confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive
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halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese
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