VBsemi-Elec-FDC6420C-VB
| Part # | VBsemi-Elec-FDC6420C-VB |
Download  | VBsemi-Elec-FDC6420C-VB |
FDC6420C
N- and P-Channe
l
2
V
(
D-S) MOSFET
0
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
V
DS
(V)
R
DS(on)
(
Ω
)
I
D
(A)
5.
5
Definition
0.
024
at V
GS
= 10 V
0.
036
at V
GS
= 4.5 V
0.
0
69
at V
GS
= – 10 V
0.
0
83
at V
GS
= – 4.5 V
•
•
•
TrenchFET
®
Power MOSFET
100 % R
g
Tested
N-Channel
P-Channel
20
4
.2
–
3
.
4
–
2
.5
Compliant to RoHS Directive 2002/95/EC
– 20
S
2
D
1
TSOP-6
Top View
G1
D1
S1
D2
1
2
3
6
G
2
G
1
3 mm
S2
G2
5
4
D
2
S
1
2.85 mm
P-Channel MOSFET
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
T =
25 °C, unless otherwise noted
A
Parameter
Symbol
N-Channel
P-Channel
– 20
Unit
V
DS
Drain-Source Voltage
Gate-Source Voltage
20
± 20
5
.
5
V
V
GS
± 20
T
A
= 25 °C
A
= 70 °C
–
3
.
4
Continuous Drain Current (T
J
= 150 °C)
a, b
I
D
T
4
.0
–
2
.3
A
I
DM
I
S
Pulsed Drain Current
10
15
Continuous Source Current (Diode Conduction)
a, b
T
A
= 25 °C
A
= 70 °C
1.05
– 1.05
1.15
0.73
Maximum Power Dissipation
a, b
P
D
W
T
T
J
, T
stg
Operating Junction and Storage
T
e
mperature Range
– 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
93
Maximum
Unit
t
≤
5 s
110
150
90
Maximum Junction-to-Ambient
a
R
thJA
Steady State
Steady State
130
75
°C/W
R
thJL
Maximum Junction-to-Lead
Notes:
a. Surface Mounted on FR4 board.
b. t
≤
5 s.
1
FDC6420C
SPECIFICATIONS
T =
25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
V
DS
= V
GS
, I
D
= 250 µA
N-Ch
0.6
V
GS(th)
Gate Threshold Voltage
Gate-Body Leakage
V
V
DS
= V
GS
, I
D
= – 250 µA
P-Ch
N-Ch
P-Ch
N-Ch
– 0.7
± 100
± 100
1
I
GSS
V
DS
= 0
V
,
V
GS
= ± 20 V
nA
V
DS
= 24
V
,
V
GS
= 0 V
V
DS
= – 24
V
,
V
GS
= 0 V
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
– 1
5
I
DSS
Zero Gate Voltage Drain Current
On-State Drain Current
a
µA
A
V
DS
= 24
V
,
V
GS
= 0
V
,
T
J
= 55 °C
V
DS
= – 24
V
,
V
GS
= 0
V
,
T
J
= 55 °C
V
DS
= 5
V
,
V
GS
= 10 V
– 5
3.7
I
D(on)
V
DS
= – 5
V
,
V
GS
= – 10 V
–
3
V
GS
= 10
V
,
I
D
= 2.5 A
0.0
22
0.
0
55
0.
0
3
0
0.
0
7
9
4.3
0.
024
0.
069
0.
0
36
0.
0
83
V
GS
= – 10
V
,
I
D
= – 1.8 A
V
GS
= 4.5
V
,
I
D
= 2.0 A
V
GS
= – 4.5
V
,
I
D
= – 1.2 A
V
DS
= 10
V
,
I
D
= 2.5 A
Drain-Source On-State Resistance
a
R
DS(on)
Ω
Forward
T
r
ansconductance
a
Diode Forward Voltage
a
g
fs
S
V
V
DS
= – 15
V
,
I
D
= – 1.8 A
2.4
I
S
= 1.05 A, V
GS
= 0 V
I
S
= – 1.05 A, V
GS
= 0 V
0.81
1.10
V
SD
– 0.83
– 1.10
Dynamic
b
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
2.1
2.4
0.7
0.9
0.7
0.8
3.2
3.6
Q
g
Q
gs
Q
gd
R
g
T
o
tal Gate Charge
N-Channel
V
DS
= 15
V
,
V
GS
= 5
V
,
I
D
= 1.8 A
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
T
u
rn-On Delay Time
Rise Time
nC
P-Channel
V
DS
= – 15
V
,
V
GS
= – 5
V
,
I
D
= – 1.8 A
0.5
3
2.4
11
11
12
14
18
20
18
8
Ω
7
8
t
d(on)
t
r
t
d(off)
t
f
N-Channel
V
DD
= 15
V
,
R
L
= 15
Ω
I
D
≅
1 A, V
GEN
= 10
V
,
R
g
= 6
Ω
9
12
13
12
5
P-Channel
V
DD
= – 15
V
,
R
L
= 15
Ω
I
D
≅
– 1 A, V
GEN
= – 10
V
,
R
g
= 6
Ω
T
u
rn-Off Delay Time
Fall Time
ns
7
11
60
I
F
= 1.05 A, dI/dt = 100 A/µs
I
F
= – 1.05 A, dI/dt = 100 A/µs
35
t
rr
Source-Drain Reverse Recovery Time
P-Ch
30
60
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
FDC6420C
N-CHANNEL TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
5
4
10
T
= – 55 °C
C
V
GS
= 10 V thru 5 V
25 °C
8
125 °C
3
2
1
0
6
4 V
4
2
3 V
4
2 V
0
0
1
2
3
5
0
1
2
3
4
5
6
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.
0
5
0.
04
0.
03
0.
02
0.0
1
0.00
300
250
200
150
100
50
C
iss
V
GS
= 4.5 V
V
GS
= 10 V
C
oss
C
rss
0
0
1
2
3
4
5
6
7
0
5
10
15
20
25
30
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
10
8
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
V
= 10 V
= 2.5 A
GS
V
= 15 V
= 1.8 A
DS
I
D
I
D
6
4
2
0
– 50
– 25
0
25
T –
Junction
T
e
mperature (°C)
J
50
75
100 125 150
0
1
2
3
4
Q
– Total Gate Charge (nC)
g
Gate Charge
On-Resistance vs. Junction Temperature
3
FDC6420C
N-CHANNEL TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
0.
10
0.
08
0.
06
0.
04
0.0
2
0.00
10
I
D
= 2 A
I
D
= 2.5 A
T
= 150 °C
J
1
T
= 25 °C
J
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
GS
– Gate-to-Source Voltage (V)
V
SD
– Source-to-Drain Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
0.4
0.2
8
6
I
D
= 250 µA
0.0
– 0.2
– 0.4
– 0.6
– 0.8
4
2
0
– 50
– 25
0
25
50
75
100 125 150
0.01
0.1
1
10
30
T
–
T
e
mperature (°C)
J
Time (s)
Threshold Voltage
Single Pulse Power (Junction-to-Ambient)
2
1
Duty Cycle = 0.5
0.2
Notes:
P
DM
0.1
0.1
t
1
0.05
t
2
t
t
1
2
1. Duty Cycle, D =
0.02
2. Per Unit Base = R
= 130 °C/W
thJA
(t)
3. T
– T
= P
Z
JM
A
DM thJA
4. Surface Mounted
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
10
100
600
4
FDC6420C
N-CHANNEL TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
P-CHANNEL TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
10
8
6
4
2
0
V
= 10 V thru 7 V
GS
6 V
T
= – 55 °C
C
5
25 °C
5 V
4 V
4
125 °C
3
1
2 V
3 V
4
0
0
1
2
3
5
0
1
2
3
4
5
6
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.
2
0.
1
300
240
180
120
60
C
iss
0.
09
0.
08
0.
07
0.
06
0.0
V
GS
= 4.5 V
V
GS
= 10 V
C
oss
C
rss
0
0
1
2
3
4
5
6
7
0
6
12
18
24
30
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
5
FDC6420C
P-CHANNEL TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
10
8
V
I
= 15 V
= 1.8 A
DS
D
V
= 10 V
= 1.8 A
GS
I
D
6
4
2
0
– 50
– 25
0
5
50
T –
Junction
T
e
mperature (°C)
J
75
100 125 150
0
1
2
3
4
5
Q
– Total Gate Charge (nC)
g
On-Resistance vs. Junction Temperature
Gate Charge
0.
2
10
I
D
= 1.8 A
0.
1
I
D
= 1 A
0.
09
0.
08
0.
07
0.
06
0.0
T
= 150 °C
J
1
T
= 25 °C
J
0.1
0
2
4
6
8
10
0.00
0.3
V
0.6
0.9
1.2
1.5
V
– Gate-to-Source Voltage (V)
– Source-to-Drain Voltage (V)
GS
SD
On-Resistance vs. Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
0.6
8
6
0.4
0.2
I
D
= 250 µA
4
2
0.0
– 0.2
– 0.4
0
– 50
– 25
0
25
50
75
100 125 150
0.01
0.1
1
10
30
Time (s)
Single Pulse Power (Junction-to-Ambient)
T
–
T
e
mperature (°C)
J
Threshold Voltage
6
FDC6420C
P-CHANNEL TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
2
1
Duty Cycle = 0.5
0.2
Notes:
P
DM
0.1
0.1
t
1
0.05
t
2
t
t
1
2
1. Duty Cycle, D =
0.02
2. Per Unit Base = R
= 130 °C/W
thJA
(t)
3. T
– T
= P
Z
A DM
thJA
JM
4. Surface Mounted
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
10
100
600
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
7
FDC6420C
TSOP: 5/6−LEAD
JEDEC Part Number: MO-193C
e1
e1
5
5
4
3
6
1
4
3
E
1
E
E
1
E
1
2
2
-B-
-B-
e
e
b
b
M
M
C
0.15
C
B
A
0.15
B A
5-LEAD TSOP
6-LEAD TSOP
4x
1
-A-
D
0.17 Ref
c
R
R
A
2
A
L
2
G
au
ge Pl
a
ne
S
e
a
ting Pl
a
ne
S
e
a
ting Pl
a
ne
L
0.0
8
C
A
1
-C-
(L )
1
4x
1
MILLIMETERS
INCHES
Dim
A
A
1
A
2
b
c
D
E
E
1
e
Min
Nom
Max
Min
0.036
0.0004
0.035
0.012
0.004
0.116
0.106
0.061
Nom
Max
0.91
0.01
0.90
0.30
0.10
2.95
2.70
1.55
–
1.10
0.10
1.00
0.45
0.20
3.10
2.9
8
1.70
–
0.043
0.004
0.039
0.01
8
0.00
8
0.122
0.117
0.067
–
–
–
0.32
0.15
3.05
2.
8
5
1.65
0.95 B
S
C
1.90
–
0.03
8
0.013
0.006
0.120
0.112
0.065
0.0374 B
S
C
0.075
–
1.
8
0
2.00
0.50
0.071
0.012
0.079
0.020
e
1
L
0.32
0.60 Ref
0.25 B
S
C
–
0.024 Ref
0.010 B
S
C
–
L
1
L
2
R
0.10
0
–
0.004
0
–
4
8
4
8
7
Nom
7 Nom
1
ECN: C-06593-Rev.
I, 1
8
-Dec-06
DWG: 5540
8
FDC6420C
RECOMMENDED MINIMUM
P
A
DS FOR TSOP-6
0.099
(2.510)
0.039
0.020
0.019
(1.001)
(0.508)
(0.493)
Recommended Minimum Pads
Dimensions in Inches/(mm)
9
FDC6420C
Disclaimer
All products due to improve reliability, function or design or for other reasons, product specifications and
data are subject to change without notice.
T
a
iwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their
representatives (collectively, the “
T
a
iwan VBsemi”), assumes no responsibility for any errors, inaccuracies or
incomplete data contained in the table or any other any disclosure of any information related to
T
a
iwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of
any goods or continuous production.
T
o
t
he maximum extent permitted by applicable law on
T
a
iwan VBsemi
relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability,
including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties,
including a particular purpose, non-infringement and merchantability guarantee.
Statement on certain types of applications are based on knowledge of the product is often used in a typical
application of the general product VBsemi
T
a
iwan demand that the
T
a
iwan VBsemi of. Statement on whether the
product is suitable for a particular application is non-binding. It is the customer’s responsibility to verify specific
product features in the products described in the specification is appropriate for use in a particular application.
Parameter data sheets and technical specifications can be provided may vary depending on the application and
performance over time. All operating parameters, including typical parameters must be made by customer’s
technical experts validated for each customer application. Product specifications do not expand or modify
T
a
iwan
VBsemi purchasing terms and conditions, including but not limited to warranty herein.
Unless expressly stated in writing,
T
a
iwan VBsemi products are not intended for use in medical, life saving,
or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal
injury or death, use or sale of products used in
T
a
iwan VBsemi such applications using client did not express their
own risk. Contact your authorized
T
a
iwan VBsemi people who are related to product design applications and
other terms and conditions in writing.
The information provided in this document and the company’s products without a license, express or implied,
by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product
names and trademarks referred to herein are trademarks of their respective representatives will be all.
Material Category Policy
Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be
RoHS compliant and meets the definition of restrictions under Directive of the European Parliament
2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and
electronic equipment (EEE) – modification, unless otherwise specified as inconsistent.(www.VBsemi.
tw
)
Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We
confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive
2011/65 /.
Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as
halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese
VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products
conform to confirm compliance with IEC 61249-2-21 standard level JS709A.
10
