VBsemi-Elec-FDD16AN08A0-VB
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FDD16AN08A0
N-Channel 100-V (D-S) MOSFET
FEATURES
•
TrenchFET
®
Power MOSFET
100 % R
g
and UIS Tested
PRODUCT SUMMARY
I
D
(A)
a
V
DS
(V)
R
DS(on)
(
)
Q
g
(Typ.)
•
0.0185 at V
GS
= 10 V
100
45
38 nC
APPLICATIONS
•
Primary Side Switch
•
Isolated DC/DC Converter
TO-252
D
G
S
N-Channel MOSFET
G
D
S
Top
V
ie
w
ABSOLUTE MAXIMUM RATINGS
(T =
25 °C, unless otherwise noted)
A
Parameter
Symbol
Limit
100
20
Unit
V
DS
Drain-Source Voltage
Gate-Source Voltage
V
V
GS
45
a
T
C
= 25 °C
T
C
= 100 °C
T
A
= 25 °C
T
A
= 100 °C
30
Continuous Drain Current (T
J
= 150 °C)
I
D
9.2
b
6.8
b
140
45
a
2
b
A
I
DM
I
S
Pulsed Drain Current
T
C
= 25 °C
T
A
= 25 °C
Continuous Source-Drain Diode Current
I
AS
Single Pulse Avalanche Current
Avalanche Energy
3
5
L = 0.1 mH
E
AS
mJ
W
101
136.4
68.2
T
C
= 25 °C
T
C
= 100 °C
Maximum Power Dissipation
P
D
3
b
T
A
= 25 °C
1.5
b
T
A
= 100 °C
T
J
, T
stg
°C
Operating Junction and Storage
T
e
mperature Range
– 55 to 175
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
b
Symbol
R
thJA
Typical
Maximum
Unit
40
50
Steady State
°C/W
R
thJC
Maximum Junction-to-Case
0.85
1.1
Notes:
a. Package limited.
b. Surface mounted on 1″ x 1″ FR4 board.
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1
FDD16AN08A0
SPECIFICATIONS
(T =
25 °C, unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
V
DS
T
e
mperature Coefficient
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
V
GS
= 0
V
,
I
D
= 250 µA
I
D
= 250 µA
100
V
110
mV/°C
V
GS(th)
T
e
mperature Coefficient
– 12.5
Gate-Source Threshold Voltage
Gate-Source Leakage
V
DS
= V
GS
, I
D
= 250 µA
2.5
5
V
I
GSS
V
DS
= 0
V
,
V
GS
=
20 V
100
1
nA
V
DS
= 100
V
,
V
GS
= 0 V
V
DS
= 100
V
,
V
GS
= 0
V
,
T
J
= 125 °C
V
DS
5
V
,
V
GS
= 10 V
Zero Gate Voltage Drain Current
I
DSS
µA
50
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward
T
r
ansconductance
a
Dynamic
b
I
D(on)
R
DS(on)
g
fs
3
0
A
S
V
GS
= 10
V
,
I
D
= 15 A
0.0185
33
V
DS
= 15
V
,
I
D
= 15 A
Input Capacitance
C
iss
C
oss
C
rss
Q
g
2400
230
80
Output Capacitance
Reverse
T
r
ansfer Capacitance
T
o
tal Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
V
DS
= 50
V
,
V
GS
= 0
V
, f = 1
M
Hz
pF
70
38
Q
gs
Q
gd
R
g
V
DS
= 50
V
,
V
GS
= 10
V
,
I
D
= 50 A
f = 1 MHz
14
nC
12
1.6
12
10
18
8
2.5
20
20
35
15
T
u
rn-On Delay Time
Rise Time
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 50
V
,
R
L
= 1
ns
I
D
50 A, V
GEN
= 10
V
,
R
g
= 1
T
u
rn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode
I
S
I
SM
V
SD
t
rr
T
C
= 25 °C
I
S
= 15 A
35
100
1.5
A
Pulse Diode Forward Current
a
Body Diode Voltage
0.85
80
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
120
240
ns
nC
Q
rr
t
a
160
57
I
F
= 50 A, dI/dt = 100 A/µs, T
J
= 25 °C
ns
t
b
23
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
服务热线：400-655-8788
2
FDD16AN08A0
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise note)
100
2.0
1.6
1.2
0.
8
0.4
0.0
V
GS
= 10
V
thr
u 8 V
8
0
60
40
20
0
V
GS
= 7
V
T
C
= 25 °C
V
GS
= 6
V
T
C
= 125 °C
T
C
= – 55 °C
0
1
2
3
4
5
0
2
4
6
8
10
V
DS
– Drain-to-So
u
rce
V
oltage (
V
)
V
GS
– Gate-to-So
u
rce
V
oltage (
V
)
Output Characteristics
Transfer Characteristics
75
60
45
30
15
0
0.036
0.027
0.01
8
0.009
0.000
T
C
= – 55 °C
T
C
= 25 °C
V
GS
= 10
V
T
C
= 125 °C
0
10
20
30
40
50
0
20
40
60
8
0
100
I
– Drain C
u
rrent (A)
I
– Drain C
u
rrent (A)
D
D
On-Resistance vs. Drain Current
Transconductance
0.10
0.0
8
0.06
0.04
0.02
0.00
3500
2
8
00
2100
1400
700
I
= 15 A
D
C
iss
T
= 150 °C
A
C
oss
T
= 25 °C
A
C
rss
0
4
5
6
7
8
9
10
0
20
40
60
8
0
100
V
GS
– Gate-to-So
u
rce
V
oltage (
V
)
V
DS
– Drain-to-So
u
rce
V
oltage (
V
)
On-Resistance vs. Gate-to-Source Voltage
Capacitance
服务热线：400-655-8788
3
FDD16AN08A0
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
20
2.5
2.0
1.5
1.0
0.5
I
= 15 A
D
I
= 20 A
D
15
10
5
V
DS
= 50
V
V
DS
=
8
0
V
V
GS
= 10
V
0
0
20
40
60
8
0
100
– 50
– 25
0
25
50
75 100
125 150 175
T
J
– J
u
nction
T
e
mperat
u
re (°C)
Q
g
–
T
o
tal Gate Charge (nC)
Gate Charge
On-Resistance vs. Junction Temperature
100
10
1
0.7
0.2
T
J
= 150 °C
T
J
= 25 °C
– 0.3
– 0.
8
– 1.3
– 1.
8
– 2.3
I
= 5 mA
D
0.1
0.01
I
= 250
µ
A
D
0.001
0.0
0.2
0.4
0.6
0.
8
1.0
1.2
– 50
– 25
0
25
50
75 100
125 150 175
V
SD
– So
u
rce-to-Drain
V
oltage (
V
)
T
J
–
T
e
mperat
u
re (°C)
Source-Drain Diode Forward Voltage
Threshold Voltage
600
500
400
300
200
100
0
300
240
1
8
0
120
60
T
C
= 25 °C
T
A
= 25 °C
0
0.001
0.01
0.1
Time (s)
Single Pulse Power, Junction-to-Case
1
10
0.001
0.01
0.1
1
10
100
1000
Time (s)
Single Pulse Power, Junction-to-Ambient
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4
FDD16AN08A0
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
1000
1000
100
10
100
10
µ
s, 100
µ
s
Limited
b
y R
Limited
b
y R
10
µ
s
*
DS(on)
*
DS(on)
100
µ
s
10
1 ms
10 ms
100 ms, DC
1 ms
1
1
10 ms
100 ms
1 s
0.1
T =
25 °C
C
Single P
u
lse
0.1
T
= 25 °C
A
10 s
100 s, DC
Single P
u
lse
0.01
0.01
0.1
1.0
10
100
1000
0.1
1.0
10
100
1000
V
DS
– Drain-to-So
u
rce
V
oltage (
V
)
V
DS
– Drain-to-So
u
rce
V
oltage (
V
)
*
V
> minim
u
m
V
at
w
hich R
is specified
DS(on)
*
V
> minim
u
m
V
at
w
hich R
is specified
DS(on)
GS
GS
GS
GS
Safe Operating Area, Junction-to-Case
Safe Operating Area, Junction-to-Ambient
60
50
40
30
20
10
0
10
8
Package Limited
6
4
2
0
0
25
50
75
100
125
150
175
0
25
50
75
100
125
150
175
T
C
– Case
T
e
mperat
u
re (°C)
T
A
– Am
b
ient
T
e
mperat
u
re (°C)
Current Derating**, Junction-to-Case
Current Derating**, Junction-to-Ambient
** The power dissipation P
D
is based on T
J(max.)
= 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
服务热线：400-655-8788
5
FDD16AN08A0
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1
8
0
160
140
120
100
8
0
60
40
20
0
0
25
50
75
100
125
150
175
0
25
50
75
100
125
150
175
T
C
– Case
T
e
mperat
u
re (°C)
T
A
– Am
b
ient
T
e
mperat
u
re (°C)
Power Derating**, Junction-to-Ambient
Power Derating**, Junction-to-Case
** The power dissipation P
D
is based on T
J(max)
= 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
服务热线：400-655-8788
6
FDD16AN08A0
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
1
D
u
ty Cycle = 0.5
0.2
N
otes:
0.1
0.1
P
DM
t
1
0.05
0.02
t
2
t
t
1
2
1. D
u
ty Cycle, D =
2. Per Unit Base = R
= 50 °C/
W
thJA
(t)
3. T
– T
= P
Z
JM
A
DM thJA
Single P
u
lse
4. S
u
rface Mo
u
nted
0.01
-4
-3
-2
-1
10
10
10
10
S
qu
are
W
a
v
e P
u
lse D
u
ration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
100
1000
10
1
D
u
ty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single P
u
lse
0.01
-4
-3
-2
-1
1
10
10
10
S
qu
are
W
a
v
e P
u
lse D
u
ration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
10
服务热线：400-655-8788
7
FDD16AN08A0
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T
aiwan VBsemi”), assumes no responsibility for any errors, inaccuracies or
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o
t
he maximum extent permitted by applicable law on
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aiwan VBsemi
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Parameter data sheets and technical specifications can be provided may vary depending on the application and
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aiwan
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