VBsemi-Elec-FDS9934C-NL-VB
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FDS9934C-NL
N- and P-Channel
3
0 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
V
DS
(V)
R
DS(on)
(
Ω
)
Q
g
(Typ.)
Definition
I
D
(A)
a
•
•
•
TrenchFET
®
Power MOSFET
100 % R
g
and UIS Tested
Compliant to RoHS Directive 2002/95/EC
8
e
8
e
8
e
0.0
18
at V
GS
= 10 V
0.0
2
0
at V
GS
= 8 V
0.0
2
4
at V
GS
= 4.5 V
0.0
3
2
at V
GS
= – 10 V
0.0
3
4
at V
GS
= – 8 V
0.0
40
at V
GS
= – 4.5 V
N-Channel
P-Channel
3
0
6.
2
– 8
e
APPLICATIONS
– 8
e
–
3
0
18
.
5
•
•
Motor Drive
Mobi
le
Power Bank
– 7.5
D
1
S
2
SO-8
S
1
D
1
D
1
D
2
D
2
1
2
3
4
8
7
6
5
G
2
G
1
G
1
S
2
G
2
S
1
D
2
ABSOLUTE MAXIMUM RATINGS
(T =
25 °C, unless otherwise noted)
A
Parameter
Symbol
N-Channel
P-Channel
–
3
0
Unit
V
DS
Drain-Source Voltage
Gate-Source Voltage
3
0
V
V
GS
±
20
±
20
8
e
– 8
e
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
6.8
– 6.8
– 6.6
b, c
– 5.3
b, c
Continuous Drain Current (T
J
= 150 °C)
I
D
6.8
b, c
5.4
b, c
I
DM
I
S
Pulsed Drain Current (10 µs Pulse Width)
Source-Drain Current Diode Current
40
– 40
A
T
C
= 25 °C
T
A
= 25 °C
2.6
– 2.6
1.6
b, c
40
– 1.6
b, c
– 40
I
SM
I
AS
Pulsed Source-Drain Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
10
5
– 20
20
L = 0.1 mH
E
AS
mJ
W
T
C
= 25 °C
T
C
= 70 °C
A
= 25 °C
3.1
2
3.2
2.1
P
D
Maximum Power Dissipation
2
b, c
2
b, c
T
1.28
b, c
1.28
b, c
T
A
= 70 °C
T
J
, T
stg
Operating Junction and Storage
T
e
mperature Range
– 55 to 150
°C
THERMAL RESISTANCE RATINGS
N-Channel
Typ. Max.
50
30
P-Channel
Parameter
Symbol
R
thJA
Unit
Typ.
Max.
62.5
38
Maximum Junction-to-Ambient
b, d
Maximum Junction-to-Foot (Drain)
t
≤
10 s
62.5
40
47
29
°C/W
R
thJF
Steady State
Notes:
a. Based on T
C
= 25 °C.
b. Surface mounted on 1″ x 1″ FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 120 °C/W (n-channel) and 110 °C/W (p-channel).
e. Package limited.
服务热线：400-655-8788
1
FDS9934C-NL
SPECIFICATIONS
(T =
25 °C, unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min.
Typ.
a
Max.
Unit
Static
V
GS
= 0
V
,
I
D
= 250 µA
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
3
0
V
DS
Δ
V
DS
/T
J
Δ
V
GS(th)
/T
J
V
GS(th)
Drain-Source Breakdown Voltage
V
DS
T
e
mperature Coefficient
V
GS(th)
T
e
mperature Coefficient
V
V
GS
= 0
V
,
I
D
= – 250 µA
–
3
0
I
D
= 250 µA
40
– 34
– 4.1
5
I
D
= – 250 µA
I
D
= 250 µA
D
= – 250 µA
mV/°C
I
V
DS
= V
GS
, I
D
= 250 µA
1.0
2.0
Gate Threshold Voltage
Gate-Body Leakage
V
V
DS
= V
GS
, I
D
= – 250 µA
V
DS
= 0 V, V
GS
= ±
12
V
V
DS
= 0 V, V
GS
= ±
12
V
V
DS
=
3
0 V, V
GS
= 0 V
–
–
2.0
1.0
± 100
± 100
1
I
GSS
nA
V
DS
= –
3
0 V, V
GS
= 0 V
V
DS
=
3
0 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
= –
3
0 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
= 5
V
,
V
GS
= 10 V
– 1
I
DSS
Zero Gate Voltage Drain Current
On-State Drain Current
b
µA
A
10
– 10
20
I
D(on)
V
DS
= – 5
V
,
V
GS
= – 10 V
V
GS
= 10
V
,
I
D
= 6.8 A
– 20
0.0
18
0.0
40
0.0
20
0.0
4
4
0.0
24
0.0
5
0
27
V
GS
= – 10
V
,
I
D
= – 8 A
V
GS
= 8
V
,
I
D
= 6.7 A
GS
= – 8
V
,
I
D
= – 6.5 A
Drain-Source On-State Resistance
b
Forward
T
r
ansconductance
b
R
DS(on)
Ω
V
V
V
GS
= 4.5
V
,
I
D
= 6.6 A
GS
= – 4.5
V
,
I
D
= – 5 A
V
DS
= 15
V
,
I
D
= 6.8 A
g
fs
S
V
DS
= – 15
V
,
I
D
= – 6.7 A
25
Dynamic
a
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
C
iss
C
oss
C
rss
Input Capacitance
N-Channel
DS
= 20
V
,
V
GS
= 0
V
, f = 1
M
Hz
62
0
9
5
1
15
33
57
6
V
Output Capacitance
pF
P-Channel
V
DS
= – 20
V
,
V
GS
= 0
V
, f = 1
M
Hz
Reverse
T
r
ansfer Capacitance
V
DS
= 20
V
,
V
GS
= 10
V
,
I
D
= 10 A
10
V
DS
= – 20
V
,
V
GS
= – 10
V
,
I
D
= – 10 A
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
41.5
5
.
8
16
63
7
Q
g
T
o
tal Gate Charge
N-Channel
V
DS
= 20
V
,
V
GS
= 4.5
V
,
I
D
= 10 A
22
nC
1
.
6
4
.
3
1.
4
7
Q
gs
Q
gd
R
g
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
P-Channel
V
DS
= – 20
V
,
V
GS
= – 4.5
V
,
I
D
= – 10 A
0.3
1.
1
5
.
7
2.
3
9
.
6
f = 1 MHz
Ω
1.
2
服务热线：400-655-8788
2
FDS9934C-NL
SPECIFICATIONS
(T =
25 °C, unless otherwise noted)
J
Typ.
a
Parameter
Dynamic
a
Symbol
Test Conditions
Min.
Max.
Unit
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
4
8
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
T
u
rn-On Delay Time
Rise Time
N-Channel
DD
= 20
V
,
R
L
= 3.7
Ω
I
D
≅
5.4 A, V
GEN
= 10
V
,
R
g
= 1
Ω
10
10
9
16
17
1
5
2
2
26
9
V
16
2
3
5
P-Channel
V
DD
= – 20
V
,
R
L
= 2
Ω
I
D
≅
– 10 A, V
GEN
= – 10
V
,
R
g
= 1
Ω
T
u
rn-Off Delay Time
Fall Time
1
0
1
0
26
1
1
16
1
3
16
5
16
16
3
5
20
26
2
2
26
9
ns
T
u
rn-On Delay Time
Rise Time
N-Channel
DD
= 20
V
,
R
L
= 3.7
Ω
I
D
≅
5.4 A, V
GEN
= 4.5
V
,
R
g
= 1
Ω
V
P-Channel
DD
= – 20
V
,
R
L
= 2
Ω
I
D
≅
– 10 A, V
GEN
= – 4.5
V
,
R
g
= 1
Ω
T
u
rn-Off Delay Time
V
Fall Time
1
6
26
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
2.6
– 2.6
40
I
S
T
C
= 25 °C
A
V
Pulse Diode Forward Current
a
Body Diode Voltage
I
SM
– 40
1.2
I
S
= 5.4 A
0.81
V
SD
I
S
= – 2 A
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
– 0.77
1
2
3
1
10
29
10
1
3
7
– 1.2
25
t
rr
Q
rr
t
a
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
ns
57
N-Channel
I
F
= 5 A, dI/dt = 100 A/µs, T
J
= 25 °C
17
nC
47
P-Channel
I
F
= – 5 A, dI/dt = – 100 A/µs, T
J
= 25 °C
ns
t
b
Reverse Recovery Rise Time
2
3
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
服务热线：400-655-8788
3
FDS9934C-NL
N-CHANNEL TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
40
30
20
10
0
10
V
GS
= 10 V thru 4 V
8
V
GS
= 3 V
6
T
C
= 25
°
C
4
2
T
C
= 125
°
C
T
C
= – 55
°
C
0
0
0.5
1
1.5
2
0
0.6
1.2
1.8
2.4
3
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
1000
800
600
400
200
0
0.030
0.025
0.020
0.015
0.010
V
GS
= 4.5 V
V
GS
= 8 V
C
iss
V
GS
= 10 V
C
rss
C
oss
0
10
20
30
40
0
10
20
I
D
– Drain Current (A)
30
40
V
DS
– Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
10
1.8
1.6
1.4
1.2
1.0
0.8
0.6
I
D
= 6.8 A
I
D
= 6.8 A
8
6
4
2
0
V
DS
= 32 V
V
GS
= 10 V; 4.5 V
V
DS
= 20 V
V
DS
= 10 V
0
3
6
9
12
15
– 50
– 25
0
25
50
75
100 125 150
Q
g
– Total Gate Charge (nC)
T
J
– Junction Temperature (
°
C)
Gate Charge
On-Resistance vs. Junction Temperature
服务热线：400-655-8788
4
FDS9934C-NL
N-CHANNEL TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
10
1
0.05
0.04
0.03
0.02
0.01
I
D
= 6.8 A
T
J
= 150
°
C
T
J
= 125
°
C
T
J
= 25
°
C
T
J
= 25
°
C
0.1
0.0
0.3
0.6
0.9
1.2
0
2
4
6
8
10
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
60
48
36
24
12
0
1.9
1.6
1.3
1
I
D
= 250 μA
0.7
– 50
– 25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
T
J
– Temperature (
°
C)
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
Limited by R
DS(on)
*
10
100 μs
1 ms
1
10 ms
100 ms
0.1
1 s
10 s
DC
T
A
= 25
°
C
Single Pulse
BVDSS Limited
10
0.01
0.1
1
100
V
DS
– Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
服务热线：400-655-8788
5
FDS9934C-NL
N-CHANNEL TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
10
8
6
4
2
0
0
25
50
75
100
125
150
T
C
– Case Temperature (
°
C)
Current Derating*
4
3
2
1
0
1.25
1.0
0.75
0.50
0.25
0.0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
C
– Case Temperature (
°
C)
T
A
– Ambient Temperature (
°
C)
Power Derating, Junction-to-Foot
Power Derating, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
服务热线：400-655-8788
6
FDS9934C-NL
N-CHANNEL TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
P
DM
0.05
t
1
t
2
t
1
1. Duty Cycle, D =
0.02
-4
t
2
2. Per Unit Base = R
= 120 °C/W
thJA
(t)
3. T
– T
= P
Z
JM
A
DM thJA
4. Surface Mounted
Single Pulse
-3
0.01
-2
-1
10
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
100
1000
10
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.1
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
服务热线：400-655-8788
7
FDS9934C-NL
P-CHANNEL TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
40
32
24
16
8
10
V
= 10 V thru 4 V
GS
8
6
4
V
= 3 V
GS
T
= 25 °C
C
2
T
1
= 125 °C
C
T
= – 55 °C
V
= 2 V
2.0
C
GS
0
0.0
0
0.5
1.0
1.5
2.5
0
2
3
4
5
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
10
00
80
0
600
400
200
0
0.090
0.070
0.050
0.030
0.010
V
GS
= 4.5 V
V
GS
= 8 V
C
iss
V
GS
= 10 V
C
oss
C
rss
0
10
20
30
40
0
8
16
24
32
40
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
10
1.8
1.6
1.4
1.2
1.0
0.8
0.6
I
= 8 A
D
I
= 10 A
D
8
V
= 10 V
GS
V
= 20 V
DS
6
V
= 4.5 V
GS
V
= 10 V
DS
V
= 30 V
DS
4
2
0
0
9
18
27
36
45
– 50
– 25
0
25
50
75
100 125 150
T
J
– Junction Temperature (°C)
Q
g
– Total Gate Charge (nC)
Gate Charge
On-Resistance vs. Junction Temperature
服务热线：400-655-8788
8
FDS9934C-NL
P-CHANNEL TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
0.15
0.12
0.09
0.06
0.03
0.00
100
10
1
I
= 8 A
D
T
= 150 °C
J
0.1
0.01
T
= 25 °C
J
T
= 125 °C
J
T
= 25 °C
8
J
0.001
0
1
2
3
4
5
6
7
9
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.8
0.5
50
40
30
20
10
0
I
= 250 μA
D
I
= 5 mA
D
0.2
– 0.1
– 0.4
– 50
– 25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
T
J
– Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
Limited by R
*
DS(on)
10
1
1 ms
10 ms
100 ms
0.1
1 s
10 s
T
= 25 °C
A
Single Pulse
DC
BVDSS Limited
10
0.01
0.01
0.1
1
100
V
DS
– Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
服务热线：400-655-8788
9
FDS9934C-NL
P-CHANNEL TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
10
8
6
4
2
0
0
25
50
75
100
125
150
T
C
– Case Temperature (
°
C)
Current Derating*
4.0
3.2
2.4
1.6
0.8
0.0
1.5
1.2
0.9
0.6
0.3
0.0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
C
– Case Temperature (°C)
T
A
– Ambient
T
e
mperature (°C)
Power Derating, Junction-to-Foot
Power Derating, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
服务热线：400-655-8788
10
FDS9934C-NL
P-CHANNEL TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
P
DM
0.05
0.02
t
1
t
2
t
1
1. Duty Cycle, D =
t
2
2. Per Unit Base = R
= 110 °C/W
thJA
(t)
3. T
– T
= P
Z
JM
A
DM thJA
4. Surface Mounted
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
100
1000
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.1
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
服务热线：400-655-8788
11
FDS9934C-NL
S
OIC (NARROW): 8-LEAD
JEDEC P
a
rt N
u
m
b
er: M
S
-012
8
6
7
2
5
4
E
H
1
3
S
h x 45
D
C
0.25 mm (G
a
ge Pl
a
ne)
A
All Le
a
d
s
0.101 mm
0.004″
q
e
B
A
1
L
MILLIMETERS
Max
INCHES
DIM
A
Min
Min
Max
1.35
0.10
0.35
0.19
4.80
3.80
1.75
0.20
0.51
0.25
5.00
4.00
0.053
0.004
0.014
0.0075
0.189
0.150
0.069
0.008
0.020
0.010
0.196
0.157
A
1
B
C
D
E
e
1.27 BSC
0.050 BSC
H
h
5.80
0.25
0.50
0°
6.20
0.50
0.93
8°
0.228
0.010
0.020
0°
0.244
0.020
0.037
8°
L
q
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
服务热线：400-655-8788
12
FDS9934C-NL
RECOMMENDED MINIMUM
P
A
DS FOR SO-8
0.172
(4.369)
0.028
(0.711)
0.022
0.050
(0.559)
(1.270)
Recommended Minimum Pads
Dimensions in Inches/(mm)
服务热线：400-655-8788
13
FDS9934C-NL
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aiwan VBsemi”), assumes no responsibility for any errors, inaccuracies or
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aiwan
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