VBsemi-Elec-FU9024N-VB
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FU9024N
P-Channel 60-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
•
TrenchFET
®
Power MOSFET
100 % UIS Tested
I
D
(A)
a
–
20
V
DS
(V)
R
DS(on)
(
)
Q
g
(Typ.)
0.066 at
V
GS
= – 10 V
APPLICATIONS
• Load
Switch
– 60
40 nC
at
V
GS
= – 4.5 V
0.08
0
–
18
TO-251
S
G
D
P-Channel MOSFET
G
D
S
Top View
ABSOLUTE MAXIMUM RATINGS
(T =
25 °C, unless otherwise noted)
A
Parameter
Symbol
Limit
– 60
Unit
V
DS
Drain-Source Voltage
Gate-Source Voltage
V
V
GS
± 20
–
20
a
– 16
b
T
C
= 25 °C
T
C
= 70 °C
A
= 25 °C
Continuous Drain Current (T
J
= 150 °C)
I
D
T
–
11
A
– 9
b
– 1
0
0
–
3
5
T
A
= 70 °C
I
DM
I
AS
Pulsed Drain Current
Avalanche Current Pulse
Single Pulse Avalanche Energy
L = 0.1 mH
E
AS
101
mJ
A
2
9
a
T
C
= 25 °C
A
= 25 °C
–
I
S
Continuous Source-Drain Diode Current
b
T
–
2.1
35
a
2
0
a
3.0
b
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
P
D
Maximum Power Dissipation
W
2
b
T
J
, T
stg
Operating Junction and Storage
T
e
mperature Range
– 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
b
33
40
R
thJA
Steady State
Steady State
°C/W
R
thJC
Maximum Junction-to-Case
0.98
1.2
Notes:
a. Based on T
C
= 25 °C.
b. Surface mounted on 1″ x 1″ FR4 board.
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1
FU9024N
SPECIFICATIONS
(T =
25 °C, unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
V
GS
= 0
V
,
I
D
= – 250 µA
I
D
= – 250 µA
Drain-Source Breakdown Voltage
– 60
V
V
DS
T
e
mperature Coefficient
68
mV/°C
V
GS(th)
T
e
mperature Coefficient
– 5.2
V
DS
= V
GS
, I
D
= – 250 µA
V
DS
= 0
V
,
V
GS
= ± 20 V
V
DS
= – 60
V
,
V
GS
= 0 V
Gate-Source Threshold Voltage
Gate-Source Leakage
– 1.0
– 2.5
± 100
– 1
V
I
GSS
nA
I
DSS
I
D(on)
R
DS(on)
g
fs
Zero Gate Voltage Drain Current
On-State Drain Current
a
µA
A
V
DS
= – 60
V
,
V
GS
= 0
V
,
T
J
= 55 °C
V
DS
=
–
5
V
,
V
GS
= – 10 V
V
GS
= – 10
V
,
I
D
= – 30 A
V
GS
= – 4.5
V
,
I
D
= – 20 A
V
DS
= – 15
V
,
I
D
= – 50 A
– 10
– 120
20
0.066
0.080
Drain-Source On-State Resistance
a
S
Forward
T
r
ansconductance
a
Dynamic
b
C
iss
C
oss
C
rss
Input Capacitance
1200
200
150
40
V
DS
= – 25
V
,
V
GS
= 0
V
, f = 1
M
Hz
V
DS
= – 30
V
,
V
GS
= – 10
V
,
I
D
= – 55 A
V
DS
= – 30
V
,
V
GS
= – 4.5
V
,
I
D
= – 55 A
f = 1 MHz
Output Capacitance
Reverse
T
r
ansfer Capacitance
pF
Q
g
T
o
tal Gate Charge
38
nC
Q
gs
Q
gd
R
g
Gate-Source Charge
16
Gate-Drain Charge
19
Gate Resistance
5.2
10
t
d(on)
t
r
t
d(off)
t
f
T
u
rn-On Delay Time
15
15
Rise Time
7
V
DD
= – 2
V
,
R
L
= 2
ns
I
D
– 10 A, V
GEN
= – 10
V
,
R
g
= 1
T
u
rn-Off Delay Time
70
110
60
Fall Time
40
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
a
Body Diode Voltage
I
S
I
SM
V
SD
t
rr
T
C
= 25 °C
I
S
= – 30 A
– 6
6
– 150
– 1.5
68
A
– 1
45
59
29
16
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ns
nC
Q
rr
t
a
120
I
F
= – 50 A, di/dt = 100 A/µs, T
J
= 25 °C
ns
t
b
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
服务热线：400-655-8788
2
FU9024N
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
200
160
120
8
0
100
8
0
60
40
20
0
V
= 10 thr
u
6
V
GS
T
= – 55 °C
C
V
= 5
V
GS
T
= 25 °C
C
T
= 125 °C
C
V
= 4
V
GS
40
V
= 3
V
GS
0
0
0
0
1
2
3
4
5
0
12
24
36
4
8
60
V
– Drain-to-So
u
rce
V
oltage (
V
)
I
– Drain C
u
rrent (A)
DS
D
Output Characteristics
Transconductance
10
8
100
T
= – 55 °C
C
8
0
60
40
20
0
T
= 25 °C
C
6
T
= 125 °C
C
4
T
= 125 °C
= 25 °C
C
2
T
C
T
= – 55 °C
4
C
0
0
12
24
36
4
8
60
1
2
3
5
I
– Drain C
u
rrent (A)
V
– Gate-to-So
u
rce
V
oltage (
V
)
D
GS
Transfer Characteristics
Transconductance
0.15
0.12
0.09
0.06
0.03
0.00
1500
1200
900
C
iss
V
V
= 4.5
V
= 10
V
GS
600
GS
300
C
oss
C
rss
0
20
40
60
8
0
100
0
10
20
30
40
50
60
V
– Drain-to-So
u
rce
V
oltage (
V
)
I
– Drain C
u
rrent (A)
DS
D
On-Resistance vs. Drain Current
Capacitance
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3
FU9024N
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
2.0
1.7
1.4
1.1
0.
8
0.5
10
I
= 20 A
I
= 55 A
D
D
8
V
= 10
V
GS
V
= 20
V
DS
6
V
= 30
V
DS
V
= 4.5
V
GS
4
2
0
0
20
Q
40
60
8
0
1.2
1
– 50
– 25
0
T
25
50
75
100 125 150
– Total Gate Charge (nC)
g
– J
u
nction
T
e
mperat
u
re (°C)
J
Gate Charge
On-Resistance vs. Gate-to-Source Voltage
100
10
1
0.10
0.0
8
0.06
0.04
0.02
0.00
I
= 20 A
D
T
= 150 °C
T
= 25 °C
J
J
T
J
= 150 °C
T
J
= 25 °C
0
2
4
6
8
10
0.0
0.3
0.6
0.9
V
–
Gate-to-So
u
rce
V
oltage (
V
)
V
– So
u
rce-to-Drain
V
oltage (
V
)
GS
SD
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
1000
75
72
69
66
63
60
I
= 10 mA
D
100
10
I
(A) at T
= 25 °C
J
A
V
1
I
(A) at T
= 150 °C
J
A
V
0.1
0.0001
0.001
0.01
– (s)
0.1
– 50
– 25
0
25
50
75
100 125
150
T
T
– Temperat
u
re (°C)
in
J
Single Pulse Avalanche Current Capability vs. Time
Drain-Source Breakdown Voltage vs. Junction Temperature
服务热线：400-655-8788
4
FU9024N
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
60
50
40
30
20
10
0
0.
8
0.5
I
= 250
µ
A
D
I
= 1 mA
D
0.2
– 0.1
– 0.4
0
25
50
75
100
125
150
– 50
– 25
0
25
50
75
100 125 150
T
– Temperat
u
re(°C)
T
– Case
T
e
mperat
u
re (°C)
J
C
Threshold Voltage
Max. Drain Current vs. Case Temperature
140
120
100
8
0
1000
100
10
Limited
b
y R
*
DS(on)
10
µ
s
100
µ
s
60
1 ms
10 ms
100 ms, DC
40
1
20
B
V
DSS
Limited
T
= 25 °C
C
Single P
u
lse
0
0.1
0.1
1
10
100
0
25
50
75
100
125
150
V
DS
– Drain-to-So
u
rce
V
oltage (
V
)
T
– Temperat
u
re (°C)
J
*
V
> minim
u
m
V
at
w
hich R
is specified
GS
GS
DS(on)
Power Derating, Junction-to-Case
Safe Operating Area, Junction-to-Case
1
D
u
ty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single P
u
lse
0.01
10
-4
-3
-2
-1
10
10
S
qu
are
W
a
v
e P
u
lse D
u
ration (s)
10
1
Normalized Thermal Transient Impedance, Junction-to-Case
.
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5
FU9024N
TOĆ251AA (DPAK)
E
A
L2
b2
c1
MILLIMETERS
INCHES
Dim
A
A1
b
b1
b2
c
c1
D
Min
2.21
0.89
0.71
0.76
5.23
0.46
0.46
5.97
6.48
Max
2.38
1.14
0.89
1.14
5.43
0.58
0.58
6.22
6.73
Min
Max
0.094
0.045
0.035
0.045
0.214
0.023
0.023
0.245
0.265
0.087
0.035
0.028
0.030
0.206
0.018
0.018
0.235
0.255
D
L3
L1
b1
E
L
2.28 BSC
0.090 BSC
e
8.89
1.91
0.89
1.15
9.53
2.28
1.27
1.52
0.350
0.075
0.035
0.045
0.375
0.090
0.050
0.060
L
L1
L2
L3
b
e
c
ECN: S-03946—Rev. E, 09-Jul-01
DWG: 5346
A1
Note: Dimension
L3 is for reference only.
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6
FU9024N
Disclaimer
All products due to improve reliability, function or design or for other reasons, product specifications and
data are subject to change without notice.
Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their
representatives (collectively, the “
T
aiwan VBsemi”), assumes no responsibility for any errors, inaccuracies or
incomplete data contained in the table or any other any disclosure of any information related to the
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any goods or continuous production.
T
o
t
he maximum extent permitted by applicable law on
T
aiwan VBsemi
relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability,
including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties,
including a particular purpose, non-infringement and merchantability guarantee.
Statement on certain types of applications are based on knowledge of the product is often used in a typical
application of the general product VBsemi
T
aiwan demand that the Taiwan VBsemi of. Statement on whether the
product is suitable for a particular application is non-binding. It is the customer’s responsibility to verify specific
product features in the products described in the specification is appropriate for use in a particular application.
Parameter data sheets and technical specifications can be provided may vary depending on the application and
performance over time. All operating parameters, including typical parameters must be made by customer’s
technical experts validated for each customer application. Product specifications do not expand or modify
T
aiwan
VBsemi purchasing terms and conditions, including but not limited to warranty herein.
Unless expressly stated in writing,
T
aiwan VBsemi products are not intended for use in medical, life saving,
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T
aiwan VBsemi such applications using client did not express their
own risk. Contact your authorized
T
aiwan VBsemi people who are related to product design applications and
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Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be
RoHS compliant and meets the definition of restrictions under Directive of the European Parliament
2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and
electronic equipment (EEE) – modification, unless otherwise specified as
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Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We
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