VBsemi-Elec-HM4454-VB
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HM4454
N-Channel 100 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
Definition
V
DS
(V)
R
DS(on)
(
Ω
)
I
D
(A)
a
10.4
9.5
Q
g
(Typ.)
0.020 at V
GS
= 10 V
0.027 at V
GS
= 8 V
•
•
•
•
Extremely Low Q
gd
for Switching Losses
100 % R
g
Tested
100 % Avalanche Tested
100
23 nC
Compliant to RoHS Directive 2002/95/EC
D
APPLICATIONS
Primary Side Switch
SO-8
•
S
S
S
G
D
D
D
D
1
2
3
4
8
7
6
5
G
S
N
-Channel MOSFET
T
o
p
V
ie
w
ABSOLUTE MAXIMUM RATINGS
(T =
25 °C, unless otherwise noted)
A
Parameter
Symbol
Limit
Unit
V
DS
Drain-Source Voltage
Gate-Source Voltage
100
± 20
10.4
9.1
8.5
b, c
7.5
b, c
V
V
GS
T
T
C
= 25 °C
C
= 70 °C
Continuous Drain Current (T
J
= 150 °C)
I
D
T
A
= 25 °C
T
A
= 70 °C
A
I
DM
I
S
Pulsed Drain Current
50
4.5
2.6
b, c
T
C
= 25 °C
T
A
= 25 °C
Continuous Source-Drain Diode Current
I
AS
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
20
20
L = 0.1 mH
E
AS
mJ
W
T
T
T
C
= 25 °C
C
= 70 °C
A
= 25 °C
5.9
3.8
Maximum Power Dissipation
P
D
3.1
b, c
2
b, c
T
A
= 70 °C
T
J
, T
stg
– 55 to 150
°C
Operating Junction and Storage
T
e
mperature Range
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
33
Maximum
Unit
Maximum Junction-to-Ambient
b, f
t
≤
10 s
Steady State
R
thJA
R
thJF
40
21
°C/W
Maximum Junction-to-Foot (Drain)
17
Notes:
a. Based
on T
C
= 25 °C.
b. Surface
mounted on 1” x 1” FR4 board.
c. t
= 10 s.
d. Maximum
under steady state conditions is 80 °C/W.
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1
HM4454
SPECIFICATIONS
(T =
25 °C, unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
V
DS
T
e
mperature Coefficient
V
GS(th)
T
e
mperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
V
DS
Δ
V
DS
/T
J
Δ
V
GS(th)
/T
J
V
GS(th)
V
GS
= 0
V
,
I
D
= 250 µA
I
D
= 250 µA
1
0
0
V
172
– 10
mV/°C
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0
V
,
V
GS
= ± 20 V
V
DS
= 100
V
,
V
GS
= 0 V
DS
= 100
V
,
V
GS
= 0
V
,
T
J
= 55 °C
V
DS
≥
10
V
,
V
GS
= 10 V
V
GS
=
10
V
,
I
D
= 5 A
1.5
30
4.5
± 100
1
V
I
GSS
nA
Zero Gate Voltage Drain Current
On-State Drain Current
a
I
DSS
I
D(on)
R
DS(on)
g
fs
µA
A
V
10
0.020
0.027
23
Drain-Source On-State Resistance
a
Ω
V
GS
=
8
V
,
I
D
= 5 A
V
DS
= 15
V
,
I
D
= 5 A
Forward
T
r
ansconductance
a
Dynamic
b
S
Input Capacitance
C
iss
C
oss
C
rss
1735
160
37
Output Capacitance
Reverse
T
r
ansfer Capacitance
V
DS
= 50
V
,
V
GS
= 0
V
, f = 1
M
Hz
DS
= 75
V
,
V
GS
= 10
V
,
I
D
= 5 A
pF
V
28.5
23
43
35
T
o
tal Gate Charge
Q
g
nC
Gate-Source Charge
Q
gs
Q
gd
R
g
V
DS
= 75
V
,
V
GS
= 8
V
,
I
D
= 5 A
f = 1 MHz
8
Gate-Drain Charge
6.5
0.85
14
Gate Resistance
1.3
21
18
33
10
24
18
30
12
Ω
T
u
rn-on Delay Time
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
Rise Time
12
V
DD
= 50
V
,
R
L
= 10
Ω
I
D
≅
5 A, V
GEN
= 10
V
,
R
g
= 1
Ω
T
u
rn-Off Delay Time
22
Fall Time
6
ns
T
u
rn-On Delay Time
16
Rise Time
12
V
DD
= 50
V
,
R
L
= 10
Ω
I
D
≅
5 A, V
GEN
= 8
V
,
R
g
= 1
Ω
T
u
rn-Off Delay Time
20
Fall Time
7
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
a
Body Diode Voltage
I
S
I
SM
V
SD
t
rr
T
C
= 25 °C
I
S
= 2.6 A
7.7
50
A
0.77
63
1.2
95
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ns
nC
Q
rr
t
a
110
49
165
I
F
= 5 A, dI/dt = 100 A/µs, T
J
= 25 °C
ns
t
b
14
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %
a. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
服务热线：400-655-8788
2
HM4454
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
60
1.2
0.9
0.6
0.3
0.0
V
GS
= 10
V
thr
u
7
V
4
8
36
24
12
0
V
= 6
V
GS
T
= 125 °C
C
T
= 25 °C
C
V
= 5
V
GS
T
C
= – 55 °C
0
1
2
3
4
5
0
2
4
6
8
10
V
DS
– Drain-to-So
u
rce
V
oltage (
V
)
V
GS
– Gate-to-So
u
rce
V
oltage (
V
)
Output Characteristics
Transfer Characteristics
0.040
0.035
0.030
0.025
0.020
0.015
2000
1600
1200
8
00
400
0
C
iss
V
GS
=
8 V
V
GS
= 10
V
C
oss
C
rss
0
10
20
30
40
50
60
0
20
40
60
8
0
100
I
D
– Drain C
u
rrent (A)
V
DS
– Drain-to-So
u
rce
V
oltage (
V
)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
10
2.5
2.1
1.7
1.3
0.9
0.5
I
D
= 5 A
I
D
= 5 A
V
= 50
V
DS
V
GS
= 10
V
8
6
4
2
0
V
DS
= 75
V
V
= 100
V
DS
V
GS
=
8 V
0
6
12
1
8
24
30
– 50
– 25
0
25
50
75
100 125 150
Q
–
T
o
tal Gate Charge (nC)
T –
J
u
nction
T
e
mperat
u
re (°C)
J
g
Gate Charge
On-Resistance vs. Junction Temperature
服务热线：400-655-8788
3
HM4454
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
0.20
0.16
0.12
0.0
8
0.04
0.00
100
I
D
= 5 A
10
T
= 150 °C
J
1
T
J
= 125 °C
T
= 25 °C
J
0.1
0.01
T
J
= 25 °C
0.001
0
2
4
6
8
10
0
0.2
0.4
0.6
0.
8
1
1.2
V
GS
– Gate-to-So
u
rce
V
oltage (
V
)
V
SD
– So
u
rce-to-Drain
V
oltage (
V
)
On-Resistance vs. Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
200
160
1.0
0.5
120
0.0
I
D
= 5 mA
8
0
– 0.5
– 1.0
– 1.5
40
0
0.001
0.01
0.1
1
10
– 50
– 25
0
25
50
75
100 125 150
Time (s)
T
J
–
T
e
mperat
u
re ( C)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
Limited
b
y R
DS(on)
*
10
1
1 ms
10 ms
100 ms
0.1
0.01
1 s
T
= 25 °C
A
10 s
DC
Single P
u
lse
1
0.01
0.1
10
100
1000
V
DS
– Drain-to-So
u
rce
V
oltage (
V
)
*
V
GS
minim
u
m
V
at
w
hich R
is specified
DS(on)
GS
Safe Operating Area, Junction-to-Ambient
服务热线：400-655-8788
4
HM4454
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
9
7
5
4
2
0
0
25
50
75
100
125
150
T
C
– Case
T
e
mperat
u
re (°C)
Current Derating*
8
.0
6.4
4.
8
3.2
1.6
0.0
2.0
1.6
1.2
0.
8
0.4
0.0
0
25
50
75
100
125
150
0
25
50
T –
Am
b
ient
T
e
mperat
u
re (°C)
A
75
100
125
150
T
C
– Case
T
e
mperat
u
re (°C)
Power, Junction-to-Case
Power, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
服务热线：400-655-8788
5
HM4454
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
1
D
u
ty Cycle = 0.5
0.2
N
otes:
0.1
0.1
P
DM
0.05
t
1
t
2
t
t
1
1. D
u
ty Cycle, D =
2
0.02
2. Per Unit Base = R
= 65 °C/
W
thJA
(t)
3. T
– T
= P
Z
A
JM
DM thJA
4. S
u
rface Mo
u
nted
Single P
u
lse
0.01
-4
-3
-2
-1
1000
10
10
10
10
10
100
1
Sq
u
are
W
a
v
e P
u
lse D
u
ration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
D
u
ty Cycle = 0.5
0.2
0.1
0.05
0.02
Single P
u
lse
0.01
-4
-3
-2
-1
1
10
10
10
10
10
Sq
u
are
W
a
v
e P
u
lse D
u
ration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
服务热线：400-655-8788
6
HM4454
S
OIC (NARROW): 8-LEAD
JEDEC P
a
rt N
u
m
b
er: M
S
-012
8
6
7
2
5
4
E
H
1
3
S
h x 45
D
C
0.25 mm (G
a
ge Pl
a
ne)
A
All Le
a
d
s
0.101 mm
0.004″
q
e
B
A
1
L
MILLIMETERS
Max
INCHES
DIM
Min
Min
Max
A
A
1
B
C
D
E
e
1.35
0.10
0.35
0.19
4.80
3.80
1.75
0.20
0.51
0.25
5.00
4.00
0.053
0.004
0.014
0.0075
0.189
0.150
0.069
0.008
0.020
0.010
0.196
0.157
1.27 BSC
0.050 BSC
H
h
5.80
0.25
0.50
0°
6.20
0.50
0.93
8°
0.228
0.010
0.020
0°
0.244
0.020
0.037
8°
L
q
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
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7
HM4454
RECOMMENDED MINIMUM
P
A
DS FOR SO-8
0.172
(4.369)
0.028
(0.711)
0.022
0.050
(0.559)
(1.270)
Recommended Minimum Pads
Dimensions in Inches/(mm)
服务热线：400-655-8788
8
HM4454
Disclaimer
All products due to improve reliability, function or design or for other reasons, product specifications and
data are subject to change without notice.
Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their
representatives (collectively, the “
T
aiwan VBsemi”), assumes no responsibility for any errors, inaccuracies or
incomplete data contained in the table or any other any disclosure of any information related to the
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any goods or continuous production.
T
o
t
he maximum extent permitted by applicable law on
T
aiwan VBsemi
relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability,
including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties,
including a particular purpose, non-infringement and merchantability guarantee.
Statement on certain types of applications are based on knowledge of the product is often used in a typical
application of the general product VBsemi
T
aiwan demand that the Taiwan VBsemi of. Statement on whether the
product is suitable for a particular application is non-binding. It is the customer’s responsibility to verify specific
product features in the products described in the specification is appropriate for use in a particular application.
Parameter data sheets and technical specifications can be provided may vary depending on the application and
performance over time. All operating parameters, including typical parameters must be made by customer’s
technical experts validated for each customer application. Product specifications do not expand or modify
T
aiwan
VBsemi purchasing terms and conditions, including but not limited to warranty herein.
Unless expressly stated in writing,
T
aiwan VBsemi products are not intended for use in medical, life saving,
or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal
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T
aiwan VBsemi such applications using client did not express their
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T
aiwan VBsemi people who are related to product design applications and
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Material Category Policy
Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be
RoHS compliant and meets the definition of restrictions under Directive of the European Parliament
2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and
electronic equipment (EEE) – modification, unless otherwise specified as
inconsistent.(www.VBsemi.com)
Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We
confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive
2011/65 /.
Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as
halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese
VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products
conform to confirm compliance with IEC 61249-2-21 standard level JS709A.
