VBsemi-Elec-HRF3205-VB
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HRF3205
N-Channel 60 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
•
•
175 °C Junction Temperature
TrenchFET
®
Power MOSFET
Material categorization:
V
DS
60
5
V
m
A
R
DS(on)
V
GS
= 10 V
I
D
120
Configuration
Single
TO-220AB
D
G
S
N-Channel MOSFET
G D S
ABSOLUTE MAXIMUM RATINGS
(T =
25 °C, unless otherwise noted)
C
Parameter
Symbol
Limit
± 20
120
Unit
V
GS
Gate-Source Voltage
V
T
C
= 25 °C
Continuous Drain Current (T
J
= 175 °C)
b
I
D
T
C
= 100 °C
90
I
DM
I
S
Pulsed Drain Current
350
A
70
a
50
Continuous Source Current (Diode Conduction)
Avalanche Current
I
AS
E
AS
Single Avalanche Energy (Duty Cycle
1 %)
L = 0.1 mH
T
C
= 25 °C
T
A
= 25 °C
125
136
mJ
W
P
D
Maximum Power Dissipation
3
b
, 8.3
b, c
T
J
, T
stg
Operating Junction and Storage Temperature Range
– 55 to 175
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t
10 sec
15
40
18
50
Maximum Junction-to-Ambient
a
R
thJA
Steady State
°C/W
R
thJC
Maximum Junction-to-Case
0.85
1.1
Notes:
a.
Package limited.
b.
Surface mounted on 1″ x 1″ FR4 board.
c.
t
10 s.
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1
HRF3205
SPECIFICATIONS
(T =
25 °C, unless otherwise noted)
J
Typ.
a
Parameter
Symbol
Test Conditions
Min.
Max.
Unit
Static
V
DS
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
60
2
V
4
± 100
1
V
DS
= 0 V, V
GS
= ± 20 V
nA
V
DS
= 60 V, V
GS
= 0 V
I
DSS
V
DS
= 60 V, V
GS
= 0 V, T
J
= 125 °C
V
DS
= 60 V, V
GS
= 0 V, T
J
= 175 °C
V
DS
= 5 V, V
GS
= 10 V
Zero Gate Voltage Drain Current
On-State Drain Current
b
50
µA
A
250
I
D(on)
60
V
GS
= 10 V, I
D
= 20 A
5
V
GS
= 10 V, I
D
= 20 A, T
J
= 125 °C
V
GS
= 10 V, I
D
= 20 A, T
J
= 175 °C
V
GS
= 7.5 V, I
D
= 15 A
10
15
8
Drain-Source On-State Resistance
b
R
DS(on)
m
Forward Transconductance
b
g
fs
V
DS
= 15 V, I
D
= 20 A
60
S
Dynamic
C
iss
C
oss
C
rss
Q
g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Turn-On Delay Time
c
Rise Time
c
6800
570
325
47
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
V
DS
= 30 V, V
GS
= 10 V, I
D
= 50 A
pF
nC
70
Q
gs
Q
gd
t
d(on)
t
r
10
12
10
20
25
50
30
V
DD
= 30 V, R
L
= 0.6
15
ns
I
D
50 A, V
GEN
= 10 V, R
g
= 2.5
Turn-Off Delay Time
c
Fall Time
c
t
d(off)
t
f
35
20
Source-Drain Diode Ratings and Characteristics
(T
C
= 25 °C)
I
SM
V
SD
t
rr
A
V
Pulsed Current
350
1
I
F
= 20 A, V
GS
= 0 V
Diode Forward Voltage
Reverse Recovery Time
1.5
I
F
= 20 A, di/dt = 100 A/µs
45
100
ns
Notes:
a.
For design aid only; not subject to production testing.
b.
Pulse test; pulse width
300 µs, duty cycle
2 %.
c.
Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
服务热线：400-655-8788
2
HRF3205
TYPICAL CHARACTERISTICS
(25 °C unless noted)
100
80
60
40
20
0
100
V
GS
= 10 thru 7 V
80
6 V
60
40
20
T
C
= 125 °C
25 °C
3V, 4V
– 55 °C
6.0
0
3.0
0
1.5
4.5
7.5
0
2
4
6
8
10
V
GS
– Gate-to-Source Voltage (V)
V
DS
– Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
120
100
80
60
40
20
0
0.015
0.012
0.009
0.006
0.003
0.000
T
C
= – 55 °C
25 °C
125 °C
V
GS
= 10 V
0
120
100
110
130
0
10
20
30
40
50
90
I
D
– Drain Current (A)
I
D
– Drain Current (A)
Transconductance
On-Resistance vs. Drain Current
10
8
8000
7000
6000
5000
4000
3000
2000
V
DS
= 30 V
I
D
= 50 A
C
iss
6
4
2
C
oss
1000
0
C
rss
0
0
10
20
30
40
50
0
10
20
30
40
50
60
V
DS
– Drain-to-Source Voltage (V)
Q
g
– Total Gate Charge (nC)
Capacitance
Gate Charge
服务热线：400-655-8788
3
HRF3205
TYPICAL CHARACTERISTICS
(25 °C unless noted)
100
2.5
V
GS
= 10 V
I
D
= 20 A
2.0
1.5
1.0
0.5
0.0
T
J
= 150 °C
T
J
= 25 °C
10
1
– 50
– 25
0
25
50
75 100 125 150 175
0
0.3
0.6
0.9
1.2
1.5
T
J
– Junction Temperature (°C)
V
SD
– Source-to-Drain Voltage (V)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
服务热线：400-655-8788
4
HRF3205
THERMAL RATINGS
1000
100
60
Limited by
R
DS(on)
*
50
40
30
20
10
0
10 µs
100 µs
10
1
1 ms
10 ms
100 ms
DC
T
C
= 25 °C
Singl
e
P
ulse
0.1
0.01
0.1
1
10
100
0
25
50
75
100
125
150
175
V
DS
– Drain-to-Source Voltage (V)
T
A
– Ambient Temperature (°C)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Maximum Drain Current vs. Ambient Temperature
Safe Operating Area
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
–
4
–
3
10
–
2
–
1
10
10
10
Square Wave Pulse Duration (s)
1
10
100
Normalized Thermal Transient Impedance, Junction-to-Case
服务热线：400-655-8788
5
HRF3205
TO-220AB
MILLIMETERS
MIN.
INCHES
A
E
DIM.
MAX.
4.65
1.01
1.73
0.61
15.49
10.51
2.67
5.28
1.40
6.48
2.92
14.02
3.82
3.94
3.00
MIN.
MAX.
0.183
0.040
0.068
0.024
0.610
0.414
0.105
0.208
0.055
0.255
0.115
0.552
0.150
0.155
0.118
F
A
b
4.25
0.69
1.20
0.36
14.85
10.04
2.41
4.88
1.14
6.09
2.41
13.35
3.32
3.54
2.60
0.167
0.027
0.047
0.014
0.585
0.395
0.095
0.192
0.045
0.240
0.095
0.526
0.131
0.139
0.102
Ø P
b(1)
c
D
E
e
e(1)
F
H(1)
J(1)
L
1
3
2
L(1)
Ø P
Q
*
M
b(1)
ECN: X12-0208-Rev. N, 08-Oct-12
DWG: 5471
Notes
* M = 1.32 mm to 1.62 mm (dimension including protrusion)
Heatsink hole for HVM
C
b
e
J(1)
e(1)
服务热线：400-655-8788
6
HRF3205
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