VBsemi-Elec-IPD034N06N3G-VB
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IPD034N06N3G
N-Channel 60 V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
V
DS
(V)
• TrenchFET
®
Power MOSFET
60
• Package with Low Thermal Resistance
R
DS(on)
(
) at V
GS
= 10 V
R
DS(on)
(
) at V
GS
= 4.5 V
0.00
50
• 100 % R
g
and UIS Tested
0.0120
I
D
(A)
97
Configuration
Single
D
TO-252
G
S
G
D
S
Top View
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
Gate-Source Voltage
V
DS
60
V
V
GS
20
T
C
= 25 °C
97
Continuous Drain Current
I
D
T
C
= 125 °C
56
Continuous Source Current (Diode Conduction)
a
Pulsed Drain Current
b
I
S
100
A
I
DM
I
AS
290
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
45
101
L = 0.1 mH
E
AS
mJ
W
T
C
= 25 °C
136
Maximum Power Dissipation
b
P
D
T
C
= 125 °C
45
Operating Junction and Storage Temperature Range
T
J
, T
stg
– 55 to + 175
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
R
thJA
LIMIT
50
UNIT
Junction-to-Ambient
PCB Mount
c
°C/W
Junction-to-Case (Drain)
R
thJC
1.1
Notes
a. Package
limited.
b. Pulse
test; pulse width
300 μs, duty cycle
2 %.
c. When
mounted on 1″ square PCB (FR-4 material).
d. Parametric
verification ongoing.
服务热线:400-655-8788
1
IPD034N06N3G
SPECIFICATIONS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX. UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
V
DS
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
60
2.0
–
–
–
V
4.0
V
DS
= 0 V, V
GS
V
GS
= 0 V
=
20 V
–
100
1
nA
μA
A
V
DS
= 60 V
V
DS
= 60 V, T
J
= 125 °C
V
DS
= 60 V, T
J
= 175 °C
V
DS
5 V
–
–
Zero Gate Voltage Drain Current
On-State Drain Current
a
I
DSS
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 10 V
V
GS
= 10 V
–
–
50
–
–
150
I
D(on)
50
–
–
–
–
= 25 A
0.0050
I
D
V
GS
= 10 V
I
D
= 25 A, T
J
= 125 °C
I
D
= 25 A, T
J
= 175 °C
I
D
= 20 A
–
–
–
–
0.0117
0.0149
0.0120
177
–
–
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 10 V
V
GS
= 4.5 V
–
Forward Transconductance
b
Dynamic
b
g
fs
V
DS
= 15 V, I
D
= 25 A
–
S
Input Capacitance
Output Capacitance
Reverse
T
r
ansfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Gate Resistance
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
C
iss
C
oss
C
rss
Q
g
–
–
–
–
–
–
1
–
–
–
–
4844
441
200
82
6060
555
250
125
–
V
GS
= 0 V
V
DS
= 25 V, f = 1 MHz
pF
Q
gs
Q
gd
R
g
V
GS
= 10 V
V
DS
= 30 V, I
D
= 50 A
f = 1 MHz
14.5
13.5
2
nC
–
3
t
d(on)
t
r
t
d(off)
t
f
14
21
8
5
V
DD
= 30 V, R
L
= 0.6
ns
I
D
50 A, V
GEN
= 10 V, R
g
= 1
41
62
11
7
Source-Drain Diode Ratings and Characteristics
b
Pulsed Current
a
I
SM
–
–
–
290
1.5
A
V
Forward Voltage
V
SD
I
F
= 50 A, V
GS
= 0 V
0.9
Notes
a. Pulse
test; pulse width
300 μs, duty cycle
2 %.
b. Guaranteed
by design, not subject to production testing.
c. Independent
of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
服务热线:400-655-8788
2
IPD034N06N3G
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
120
96
72
48
24
0
160
128
96
64
32
0
V
GS
= 10 V thru 5 V
T
C
= 25
°
C
V
GS
= 4 V
T
C
= 125
°
C
T
C
= – 55
°
C
0
2
4
6
8
10
0
2
4
6
8
10
V
GS
–
G
ate-to-
S
ource Voltage (V)
V
D
S
– Drain-to-
S
ource Voltage (V)
Transfer Characteristics
Output Characteristics
350
280
210
140
70
0.015
T
C
= – 55
°
C
V
GS
= 4.5 V
0.0012
0.009
0.006
0.003
0.000
T
C
= 25
°
C
T
C
= 125
°
C
V
GS
= 10 V
0
0
10
20
30
40
50
0
20
40
60
80
100
I
D
– Drain Current (A)
I
D
– Drain Current (A)
On-Resistance vs. Drain Current
Transconductance
8000
6400
4800
3200
1600
0
10
8
I
D
= 50 A
V
D
S
= 30 V
C
i
ss
6
4
C
r
ss
2
C
o
ss
0
0
12
24
36
48
60
0
20
40
60
80
100
V
D
S
– Drain-to-
S
ource Voltage (V)
Q
g
– Total
G
ate Charge (nC)
Gate Charge
Capacitance
服务热线:400-655-8788
3
IPD034N06N3G
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
2.5
2.1
1.7
1.3
0.9
0.5
80
76
72
68
64
60
V
GS
= 10 V
I
D
= 25 A
I
D
= 1 mA
V
GS
= 4.5 V
– 50
– 25
0
25
50
75 100
125 150 175
– 50
– 25
0
25
50
75 100
125 150 175
T
J
– Junction Temperature (
°
C)
T
J
– Junction Temperature (
°
C)
On-Resistance vs. Junction Temperature
Drain Source Breakdown vs. Junction Temperature
100
10
0.05
0.04
0.03
0.02
0.01
0.00
T
J
= 150
°
C
1
0.1
T
J
= 25
°
C
T
J
= 150
°
C
0.01
0.001
T
J
= 25
°
C
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
S
D
–
S
ource-to-Drain Voltage (V)
V
GS
–
G
ate-to-
S
ource Voltage (V)
Source Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.5
0.1
– 0.3
– 0.7
– 1.1
I
D
= 5 mA
I
D
= 250 μA
– 1.5
– 50
– 25
0
25
50
75 100
125 150 175
T
J
– Temperature (
°
C)
Threshold Voltage
服务热线:400-655-8788
4
IPD034N06N3G
THERMAL RATINGS
(T
A
= 25 °C, unless otherwise noted)
1000
100
100 μ
s
I
DM
Limited
1 m
s
10
10 m
s
100 m
s
1
s
, 10
s
, DC
Limited by R
D
S
(on)
*
1
0.1
BVD
SS
Limited
T
C
= 25
°
C
S
ingle Pul
s
e
0.01
0.01
0.1
1
10
100
V
D
S
– Drain-to-
S
ource Voltage (V)
* V
GS
> minimum V
GS
at which R
D
S
(on)
i
s s
pecified
Safe Operating Area
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
服务热线:400-655-8788
5
IPD034N06N3G
THERMAL RATINGS
(T
A
= 25 °C, unless otherwise noted)
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
100
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Note
•
The characteristics shown in the two graphs
– Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
– Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board – FR4, size 1″ x 1″ x 0.062″, double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
服务热线:400-655-8788
6
IPD034N06N3G
TO-252AA CASE OUTLINE
E
A
MILLIMETERS
INCHES
C2
b3
DIM.
A
MIN.
MAX.
2.38
0.127
0.88
1.14
5.46
0.61
0.89
6.22
–
MIN.
MAX.
0.094
0.005
0.035
0.045
0.215
0.024
0.035
0.245
–
2.18
–
0.086
–
A1
b
0.64
0.76
4.95
0.46
0.46
5.97
5.21
6.35
4.32
9.40
0.025
0.030
0.195
0.018
0.018
0.235
0.205
0.250
0.170
0.370
b2
b3
C
C2
D
D1
E
6.73
–
0.265
–
E1
H
b
C
b2
e
10.41
0.410
A1
e1
e
2.28 BSC
4.56 BSC
1.40
0.090 BSC
0.180 BSC
e1
L
1.78
1.27
1.02
1.52
0.055
0.070
0.050
0.040
0.060
L3
L4
L5
0.89
–
0.035
–
1.14
0.045
ECN:
X12-0247
-Rev. M, 24-Dec-12
DWG: 5347
E1
Note
Dimension L3 is for reference only.
•
服务热线:400-655-8788
7
IPD034N06N3G
Disclaimer
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T
aiwan VBsemi”), assumes no responsibility for any errors, inaccuracies or
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t
he maximum extent permitted by applicable law on
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aiwan VBsemi
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aiwan demand that the Taiwan VBsemi of. Statement on whether the
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Parameter data sheets and technical specifications can be provided may vary depending on the application and
performance over time. All operating parameters, including typical parameters must be made by customer’s
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aiwan
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