VBsemi-Elec-IPP80P04P4L-04-VB
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IPP80P04P4L-04
P-Channel 40-V (D-S) MOSFET
FEATURES
•
PRODUCT SUMMARY
TrenchFET
®
Power MOSFET
I
D
(A)
a
V
DS
(V)
r
DS(on)
(
Ω
)
Q
g
(Typ.)
RoHS
0.00
41
at V
GS
= – 10 V
– 40
– 110
185 nC
COMPLIANT
S
TO-220AB
G
D
G D
S
P-Channel MOSFET
Top View
ABSOLUTE MAXIMUM RATINGS
T =
25 °C, unless otherwise noted
A
Parameter
Symbol
Limit
– 40
20
Unit
V
DS
Drain-Source Voltage
Gate-Source Voltage
V
V
GS
– 110
a
– 110
a
39
b, c
T
C
= 25 °C
C
= 70 °C
T
Continuous Drain Current (T
J
= 175 °C)
I
D
T
A
= 25 °C
T
A
= 70 °C
33
b, c
A
I
DM
I
S
Pulsed Drain Current
240
T
C
= 25 °C
110
Continuous Source-Drain Diode Current
10
b, c
75
T
A
= 25 °C
I
AS
Avalanche Current
L = 0.1 mH
E
AS
Single-Pulse Avalanche Energy
281
375
262
mJ
W
T
C
= 25 °C
C
= 70 °C
T
P
D
Maximum Power Dissipation
15
b, c
T
A
= 25 °C
T
A
= 70 °C
10.5
b, c
– 55 to 175
260
T
J
, T
stg
Operating Junction and Storage
T
e
mperature Range
Soldering Recommendations (Peak
T
e
mperature)
d, e
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
b, d
R
thJA
t
≤
10 s
8
10
°C/W
R
thJC
Maximum Junction-to-Case (Drain)
Steady State
0.33
0.4
Notes:
a. Package limited.
b. Surface Mounted on 1″ x 1″ FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 40 °C/W.
服务热线：400-655-8788
1
IPP80P04P4L-04
SPECIFICATIONS
T =
25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
V
DS
Δ
V
DS
/T
J
Δ
V
GS(th)
/T
J
V
GS(th)
V
GS
= 0
V
,
I
D
= – 250 µA
I
D
= – 250 µA
Drain-Source Breakdown Voltage
– 40
V
V
DS
T
e
mperature Coefficient
– 40
– 5.5
– 3
mV/°C
V
GS(th)
T
e
mperature Coefficient
V
DS
= V
GS
, I
D
= – 250 µA
Gate-Source Threshold Voltage
Gate-Source Leakage
– 2
– 4
100
– 1
V
I
GSS
V
DS
= 0
V
,
V
GS
=
20 V
nA
V
DS
= – 40
V
,
V
GS
= 0 V
DS
= – 40
V
,
V
GS
= 0
V
,
T
J
= 55 °C
V
DS
≥
5
V
,
V
GS
= – 10 V
I
DSS
Zero Gate Voltage Drain Current
On-State Drain Current
a
µA
V
– 10
I
D(on)
r
DS(on)
g
fs
– 120
A
Ω
S
Drain-Source On-State Resistance
a
Forward
T
r
ansconductance
a
V
GS
= – 10
V
,
I
D
= – 20 A
0.0041
75
V
DS
= – 15
V
,
I
D
= – 20 A
Dynamic
b
C
iss
C
oss
C
rss
Q
g
Input Capacitance
11300
1510
1000
185
48
V
DS
= – 25
V
,
V
GS
= 0
V
, f = 1
M
Hz
Output Capacitance
pF
Reverse
T
r
ansfer Capacitance
T
o
tal Gate Charge
280
Q
gs
Q
gd
R
g
V
DS
= – 20
V
,
V
GS
= – 10
V
,
I
D
= – 110 A
f = 1 MHz
Gate-Source Charge
nC
Gate-Drain Charge
42
Gate Resistance
4.0
Ω
t
d(on)
t
r
t
d(off)
t
f
T
u
rn-On Delay Time
25
40
440
165
55
Rise Time
290
110
35
V
DD
= – 20
V
,
R
L
= 0.18
Ω
I
D
≅
– 110 A, V
GEN
= – 10
V
,
R
g
= 1
Ω
ns
T
u
rn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
a
Body Diode Voltage
I
S
I
SM
V
SD
t
rr
T
C
= 25 °C
I
S
= – 20 A
– 110
– 240
– 1.5
105
A
– 0.8
70
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ns
nC
Q
rr
t
a
130
37
200
I
F
= – 20 A, di/dt = 100 A/µs, T
J
= 25 °C
ns
t
b
33
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
服务热线：400-655-8788
2
IPP80P04P4L-04
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
200
40
30
20
10
0
V
GS
= 10 thru 7 V
6 V
160
120
80
40
0
5 V
25 °C
– 55 °C
T
C
= 125 °C
2
4 V
0
1
3
4
5
6
0.0
0.5
1.0
1.5
2.0
V
GS
– Gate-to-Source Voltage (V)
V
DS
– Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.010
0.008
16000
14000
12000
10000
8000
6000
4000
2000
0
C
iss
0.006
0.004
0.002
0.000
V
GS
= 10 V
C
oss
C
rss
0
20
40
60
80
100
120
0
10
20
30
40
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
1.8
1.5
1.2
0.9
0.6
10
8
I
= 20 A
D
V
= 10 V
GS
V
DS
= 20 V
6
V
DS
= 32 V
4
2
0
– 50
– 25
0
25
50
75 100
125 150 175
0
40
80
120
160
200
240
Q
g
–
T
o
tal Gate Charge (nC)
T –
Junction
T
e
mperature (°C)
J
Gate Charge
On-Resistance vs. Junction Temperature
服务热线：400-655-8788
3
IPP80P04P4L-04
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
0.05
0.04
0.03
0.02
0.01
0.00
100
T
J
= 150 °C
10
T
A
= 150 °C
T
= 25 °C
J
T
A
= 25 °C
1
0.0
0
1
2
3
4
5
6
7
8
9
10
0.3
0.6
0.9
1.2
1.5
V
GS
– Gate-to-Source Voltage (V)
V
SD
– Source-to-Drain Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
1.1
0.9
35
30
I
D
=10 mA
0.7
25
20
15
10
0.5
0.3
0.1
T
= 25 °C
C
– 0.1
– 0.3
– 0.5
5
0
– 50
– 25
0
25
50
75 100
125 150 175
0.0001 0.001
0.01
0.1
1.00
10
100 1000
T
J
–
T
e
mperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
1000
Limited by r
*
DS(on)
10 µ
s
100 µ
s
100
10
1
1 ms
10 ms
100 ms
DC
Single Pulse
= 25 °C
T
C
1
10
100
0.1
V
DS
– Drain-to-Source Voltage (V)
*V >
minimum V
GS
at which r
is specified
DS(on)
GS
Safe Operating Area, Junction-to-Case
服务热线：400-655-8788
4
IPP80P04P4L-04
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
240
210
180
150
120
90
400
350
300
250
200
150
100
50
Package Limited
60
30
0
0
0
25
50
75
100
125
150
175
25
50
75
100
125
150
175
T
C
– Case
T
e
mperature (°C)
T
C
– Case
T
e
mperature (°C)
Max. Avalanche and Drain Current
vs. Case Temperature*
Power Derating, Junction-to-Case
1
0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
0.0001
0.001
0.01
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
0.1
1
* The power dissipation P
D
is based on T
J(max)
= 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
服务热线：400-655-8788
5
IPP80P04P4L-04
TO-220AB
MILLIMETERS
MIN.
INCHES
A
E
DIM.
MAX.
4.65
1.01
1.73
0.61
15.49
10.51
2.67
5.28
1.40
6.48
2.92
14.02
3.82
3.94
3.00
MIN.
MAX.
0.183
0.040
0.068
0.024
0.610
0.414
0.105
0.208
0.055
0.255
0.115
0.552
0.150
0.155
0.118
F
A
b
4.25
0.69
1.20
0.36
14.85
10.04
2.41
4.88
1.14
6.09
2.41
13.35
3.32
3.54
2.60
0.167
0.027
0.047
0.014
0.585
0.395
0.095
0.192
0.045
0.240
0.095
0.526
0.131
0.139
0.102
Ø P
b(1)
c
D
E
e
e(1)
F
H(1)
J(1)
L
1
3
2
L(1)
Ø P
Q
*
M
b(1)
ECN: X12-0208-Rev. N, 08-Oct-12
DWG: 5471
Notes
* M = 1.32 mm to 1.62 mm (dimension including protrusion)
Heatsink hole for HVM
C
b
e
J(1)
e(1)
服务热线：400-655-8788
6
IPP80P04P4L-04
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T
aiwan VBsemi”), assumes no responsibility for any errors, inaccuracies or
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aiwan
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