VBsemi-Elec-IRFI1010NPBF-VB
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IRFI1010NPBF
N-Channel 60-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
•
•
175 °C Junction Temperature
I
D
(A)
a
70
V
DS
(V)
R
DS(on)
(
)
TrenchFET
®
Power MOSFET
0.010 at V
GS
= 10 V
0.012 at V
GS
= 4.5 V
Material categorization:
60
55
TO-220 FULLPAK
D
G
S
D
S
G
Top View
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(T =
25 °C, unless otherwise noted)
C
Parameter
Symbol
Limit
± 20
70
Unit
V
GS
Gate-Source Voltage
V
T
C
= 25 °C
Continuous Drain Current (T
J
= 175 °C)
b
I
D
50
a
T
C
= 100 °C
I
DM
I
S
Pulsed Drain Current
200
A
50
a
50
Continuous Source Current (Diode Conduction)
Avalanche Current
I
AS
E
AS
Single Avalanche Energy (Duty Cycle
1 %)
L = 0.1 mH
T
C
= 25 °C
T
A
= 25 °C
125
136
mJ
W
P
D
Maximum Power Dissipation
3
b
, 8.3
b, c
T
J
, T
stg
Operating Junction and Storage Temperature Range
– 55 to 175
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t
10 sec
15
40
18
50
Maximum Junction-to-Ambient
a
R
thJA
Steady State
°C/W
R
thJC
Maximum Junction-to-Case
0.85
1.1
Notes:
a.
Package limited.
b.
Surface mounted on 1″ x 1″ FR4 board.
c.
t
10 s.
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1
IRFI1010NPBF
SPECIFICATIONS
(T =
25 °C, unless otherwise noted)
J
Typ.
a
Parameter
Symbol
Test Conditions
Min.
Max.
Unit
Static
V
DS
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
60
1
V
2
3
± 100
1
V
DS
= 0 V, V
GS
= ± 20 V
nA
V
DS
= 60 V, V
GS
= 0 V
I
DSS
V
DS
= 60 V, V
GS
= 0 V, T
J
= 125 °C
V
DS
= 60 V, V
GS
= 0 V, T
J
= 175 °C
V
DS
= 5 V, V
GS
= 10 V
Zero Gate Voltage Drain Current
On-State Drain Current
b
50
µA
A
250
I
D(on)
60
V
GS
= 10 V, I
D
= 20 A
0.010
0.016
0.020
0.012
60
V
GS
= 10 V, I
D
= 20 A, T
J
= 125 °C
V
GS
= 10 V, I
D
= 20 A, T
J
= 175 °C
Drain-Source On-State Resistance
b
R
DS(on)
V
GS
= 4.5 V, I
D
= 15 A
Forward Transconductance
b
g
fs
V
DS
= 15 V, I
D
= 20 A
S
Dynamic
C
iss
C
oss
C
rss
Q
g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Turn-On Delay Time
c
Rise Time
c
2650
470
225
47
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
pF
nC
70
Q
gs
Q
gd
t
d(on)
t
r
V
DS
= 30 V, V
GS
= 10 V, I
D
= 50 A
10
12
10
20
25
50
30
V
DD
= 30 V, R
L
= 0.6
15
ns
I
D
50 A, V
GEN
= 10 V, R
g
= 2.5
Turn-Off Delay Time
c
Fall Time
c
t
d(off)
t
f
35
20
Source-Drain Diode Ratings and Characteristics
(T
C
= 25 °C)
I
SM
V
SD
t
rr
A
V
Pulsed Current
70
1.5
100
I
F
= 20 A, V
GS
= 0 V
Diode Forward Voltage
Reverse Recovery Time
1
I
F
= 20 A, di/dt = 100 A/µs
45
ns
Notes:
a.
For design aid only; not subject to production testing.
b.
Pulse test; pulse width
300 µs, duty cycle
2 %.
c.
Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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2
IRFI1010NPBF
TYPICAL CHARACTERISTICS
(25 °C unless noted)
100
80
60
40
20
0
200
V
GS
= 10 thru 5 V
160
4 V
120
80
T
C
= 125 °C
25 °C
40
2 V, 3 V
– 55 °C
0
0
1
2
3
4
5
0
2
4
6
8
10
V
GS
– Gate-to-Source Voltage (V)
V
DS
– Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
120
100
80
60
40
20
0
0.020
0.016
0.012
0.008
0.004
0.000
T
C
= – 55 °C
V
GS
= 4.5 V
25 °C
V
GS
= 10 V
125 °C
0
20
40
60
80
100
0
10
20
30
40
50
I
D
– Drain Current (A)
I
D
– Drain Current (A)
Transconductance
On-Resistance vs. Drain Current
10
8
4000
3500
3000
2500
2000
1500
1000
V
DS
= 30 V
I
D
= 50 A
C
iss
6
4
2
C
oss
500
0
C
rss
0
0
10
20
30
40
50
0
10
20
30
40
50
60
V
DS
– Drain-to-Source Voltage (V)
Q
g
– Total Gate Charge (nC)
Capacitance
Gate Charge
服务热线：400-655-8788
3
IRFI1010NPBF
TYPICAL CHARACTERISTICS
(25 °C unless noted)
100
2.5
V
GS
= 10 V
I
D
= 20 A
2.0
1.5
1.0
0.5
0.0
T
J
= 150 °C
T
J
= 25 °C
10
1
– 50
– 25
0
25
50
75 100 125 150 175
0
0.3
0.6
0.9
1.2
1.5
T
J
– Junction Temperature (°C)
V
SD
– Source-to-Drain Voltage (V)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
服务热线：400-655-8788
4
IRFI1010NPBF
THERMAL RATINGS
1000
100
60
Limited by
R
DS(on)
*
50
40
30
20
10
0
10 µs
100 µs
10
1
1 ms
10 ms
100 ms
DC
T
C
= 25 °C
Singl
e
P
ulse
0.1
0.01
0.1
1
10
100
0
25
50
75
100
125
150
175
V
DS
– Drain-to-Source Voltage (V)
T
A
– Ambient Temperature (°C)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Maximum Drain Current vs. Ambient Temperature
Safe Operating Area
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Singl
e
P
ulse
0.01
–
4
–
3
10
–
2
–
1
10
10
10
Square Wave Pulse Duration (s)
1
10
100
Normalized Thermal Transient Impedance, Junction-to-Case
服务热线：400-655-8788
5
IRFI1010NPBF
TO-220 FULLPAK (HIGH VOLTAGE)
A
E
n
A1
Ø P
d1
d3
D
u
L1
V
L
b3
A2
b2
c
b
e
MILLIMETERS
INCHES
DIM.
A
MIN.
4.570
2.570
2.510
0.622
1.229
1.229
0.440
8.650
15.88
12.300
10.360
MAX.
4.830
2.830
2.850
0.890
1.400
1.400
0.629
9.800
16.120
12.920
10.630
MIN.
0.180
0.101
0.099
0.024
0.048
0.048
0.017
0.341
0.622
0.484
0.408
MAX.
0.190
0.111
0.112
0.035
0.055
0.055
0.025
0.386
0.635
0.509
0.419
A1
A2
b
b2
b3
c
D
d1
d3
E
e
2.54 BSC
0.100 BSC
L
13.200
3.100
6.050
3.050
2.400
0.400
13.730
3.500
6.150
3.450
2.500
0.500
0.520
0.122
0.238
0.120
0.094
0.016
0.541
0.138
0.242
0.136
0.098
0.020
L1
n
Ø P
u
v
ECN: X09-0126-Rev. B, 26-Oct-09
DWG: 5972
Notes
1.
To be used only for process drawing.
2.
These dimensions apply to all TO-220, FULLPAK leadframe versions 3 leads.
3.
All critical dimensions should C meet C
pk
> 1.33.
4.
All dimensions include burrs and plating thickness.
5.
No chipping or package damage.
服务热线：400-655-8788
6
IRFI1010NPBF
Disclaimer
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