VBsemi-Elec-IRFL214TRPBF-VB
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IRFL214TRPBF
N-Channel 250 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
V
DS
(V)
• Surface mount
250
• Available in tape and reel
R
DS(on)
(
)
V
GS
= 10 V
2.0
• Dynamic dV/dt rating
• Repetitive avalanche rated
• Fast switching
• Ease of paralleling
• Simple drive requirements
Q
g
(Max.) (nC)
Q
gs
(nC)
8.2
1.8
Available
Q
gd
(nC)
4.5
Configuration
Single
D
SO
T
–
223
D
G
S
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
250
UNIT
Drain-Source Voltage
Gate-Source Voltage
V
DS
V
V
GS
20
T
C
= 25 °C
0.79
0.50
6.3
Continuous Drain Current
V
GS
at 10 V
I
D
T
C
= 100 °C
A
Pulsed Drain Current
a
I
DM
Linear Derating Factor
0.025
0.017
50
W/°C
Linear Derating Factor (PCB Mount)
e
Single Pulse Avalanche Energy
b
Repetitive Avalanche Current
a
E
AS
I
AR
mJ
A
0.79
0.31
3.1
Repetitive Avalanche Energy
a
E
AR
mJ
Maximum Power Dissipation
T
C
= 25 °C
P
D
W
V/ns
°C
Maximum Power Dissipation (PCB Mount)
e
Peak Diode Recovery dV/dt
c
T
A
= 25 °C
2.0
dV/dt
4.8
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
d
T
J
, T
stg
-55 to +150
300
for 10 s
Notes
a. Repetitive
rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= 50 V, starting T
J
= 25 °C, L = 128 mH, R
g
= 25
, I
AS
= 0.79 A (see fig. 12).
c. I
SD
2.7 A, dI/dt
65 A/μs, V
DD
V
DS
, T
J
150 °C.
d. 1.6
mm from case.
e. When
mounted on 1″ square PCB (FR-4 or G-10 material).
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1
IRFL214TRPBF
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
60
UNIT
Maximum Junction-to-Ambient
R
thJA
R
thJC
–
–
–
–
(PCB Mount)
a
°C/W
Maximum Junction-to-Case (Drain)
40
Note
a. When
mounted on 1″ square PCB (FR-4 or G-10 material).
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX. UNIT
Static
Drain-Source Breakdown Voltage
V
DS
V
DS
/T
J
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= 250 μA
Reference to 25 °C, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 250 μA
250
–
–
–
V
V/°C
V
V
DS
Temperature Coefficient
–
2.0
–
0.39
Gate-Source Threshold Voltage
Gate-Source Leakage
–
–
4.0
100
25
250
–
V
GS
=
20 V
nA
V
DS
= 250 V, V
GS
= 0 V
–
–
Zero Gate Voltage Drain Current
I
DSS
μA
V
DS
= 200 V, V
GS
= 0 V, T
J
= 125 °C
–
–
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
R
DS(on)
g
fs
V
GS
= 10 V
I
D
= 0.47 A
b
—
2.0
–
V
DS
= 50 V, I
D
= 0.47 A
0.50
–
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
C
iss
C
oss
C
rss
Q
g
–
–
–
–
–
–
–
–
–
–
–
140
42
9.6
–
–
–
V
GS
= 0 V,
V
DS
= 25 V,
f = 1.0 MHz, see fig. 5
pF
–
8.2
1.8
4.5
–
I
D
= 2.7 A, V
DS
= 200 V,
Q
gs
Q
gd
t
d(on)
t
r
V
GS
= 10 V
–
nC
see fig. 6 and 13
b
–
7.0
7.6
16
7.0
4.0
–
V
DD
= 125 V, I
D
= 2.7 A,
ns
R
g
= 24
, R
D
= 45
, see fig. 10
b
Turn-Off Delay Time
Fall Time
t
d(off)
t
f
–
–
D
Internal Drain Inductance
L
D
Between lead,
–
6 mm (0.25″) from
package and center of
die contact
nH
G
Internal Source Inductance
L
S
–
6.0
–
S
Drain-Source Body Diode Characteristics
MOSFET symbol
showing the
integral reverse
p – n junction diode
D
Continuous Source-Drain Diode Current
I
S
–
–
–
–
0.79
6.3
A
G
Pulsed Diode Forward Current
a
I
SM
S
Body Diode Voltage
V
SD
t
rr
T
J
= 25 °C, I
S
= 0.79 A, V
GS
= 0 V
b
–
–
–
–
2.0
390
1.3
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
190
0.64
ns
μC
T
J
= 25 °C, I
F
= 2.7 A, dI/dt = 100 A/μs
b
Q
rr
t
on
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
Notes
a. Repetitive
rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse
width
300 μs; duty cycle
2 %.
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IRFL214TRPBF
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Fig. 4 – Normalized On-Resistance vs. Temperature
Fig. 1 – Typical Output Characteristics
Fig. 5 – Typical Capacitance vs. Drain-to-Source Voltage
Fig. 2 – Typical Output Characteristics
Fig. 6 – Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 3 – Typical Transfer Characteristics
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Fig. 7 – Typical Source-Drain Diode Forward Voltage
Fig. 9 – Maximum Drain Current vs. Case Temperature
R
D
V
DS
V
GS
D.U.T.
R
g
+
–
V
DD
10 V
Pulse width
≤
1 µs
Duty factor
≤
0.1 %
Fig. 10a – Switching Time Test Circuit
V
DS
90 %
10 %
V
GS
Fig. 8 – Maximum Safe Operating Area
t
d(on)
t
r
t
d(off)
t
f
Fig. 10b – Switching Time Waveforms
Fig. 11 – Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRFL214TRPBF
L
V
DS
V
DS
Vary t
p
to obtain
required I
AS
t
p
V
DD
D.U.T.
R
g
+
–
V
DD
V
DS
I
AS
10 V
t
p
0.01
Ω
I
AS
Fig. 12b – Unclamped Inductive Waveforms
Fig. 12a – Unclamped Inductive Test Circuit
Fig. 12c – Maximum Avalanche Energy vs. Drain Current
Current regulator
Same type as D.U.T.
50 k
Ω
Q
G
V
GS
12 V
0.2 µF
0.3 µF
Q
GS
Q
GD
+
–
V
DS
D.U.T.
V
G
V
GS
3 mA
Charge
I
G
I
D
Current sampling resistors
Fig. 13a – Basic Gate Charge Waveform
Fig. 13b – Gate Charge Test Circuit
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5
IRFL214TRPBF
Peak Dio
d
e Recovery
d
V/
d
t Test Circuit
+
Circuit layout con
s
ideration
s
•
Low
s
tray inductance
•
G
round plane
D.U.T.
•
Low leakage inductance
current tran
s
former
–
+
–
–
+
R
g
•
dV/dt controlled by R
g
•
Driver
s
ame type a
s
D.U.T.
•
I
S
D
controlled by duty factor “D”
•
D.U.T. – device under te
s
t
+
–
V
DD
Driver gate drive
P.W.
P.W.
D =
Period
Period
V
GS
= 10 V
a
D.U.T. l
S
D
waveform
D.U.T. V
D
S
waveform
Rever
s
e
recovery
current
Body diode forward
current
dI/dt
Diode recovery
dV/dt
V
DD
Re-applied
voltage
Body diode forward drop
Inductor current
I
S
D
Ripple
≤
5 %
Note
a. V
GS
= 5 V for logic level device
s
Fig.14 – For N-Channel
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6
IRFL214TRPBF
SOT-223 (HIGH VOLTAGE)
B
D
3
A
0.0
8
(0.003)
B1
C
M
M
0.10 (0.004)
C B
A
4
3
H
E
M
M
0.20 (0.00
8
) C
A
L1
4 x L
1
2
3
3 x B
0.10 (0.004)
C B
e
θ
M
M
e1
4 x C
MILLIMETERS
INCHES
DIM.
A
MIN.
1.55
0.65
2.95
0.25
6.30
3.30
MAX.
1.80
0.85
3.15
0.35
6.70
3.70
MIN.
0.061
0.026
0.116
0.010
0.248
0.130
MAX.
0.071
0.033
0.124
0.014
0.264
0.146
B
B1
C
D
E
e
2.30 BSC
4.60 BSC
0.0905 BSC
0.181 BSC
e1
H
6.71
0.91
7.29
–
0.264
0.036
0.287
–
L
L1
θ
0.061 BSC
0.0024 BSC
–
10′
–
10′
ECN: S-82109-Rev. A, 15-Sep-08
DWG: 5969
Notes
1. Dimensioning and tolerancing per ASME Y14.5M-1994.
2. Dimensions are shown in millimeters (inches).
3. Dimension do not include mold flash.
4. Outline conforms to JEDEC outline TO-261AA.
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7
IRFL214TRPBF
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T
aiwan VBsemi”), assumes no responsibility for any errors, inaccuracies or
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t
he maximum extent permitted by applicable law on
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aiwan VBsemi
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aiwan
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