VBsemi-Elec-IRFP4410ZPBF-VB
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IRFP4410ZPBF
N-Channel 100 V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
•
•
•
TrenchFET
®
Power MOSFET
V
DS
(V)
R
DS(on)
(
Ω
)
I
D
(A)
New Package with Low Thermal Resistance
100 % R
g
Tested
150
100
0.006 at V
GS
= 10 V
D
TO-247AC
G
S
D
G
S
Top
V
ie
w
N
-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
T =
25 °C, unless otherwise noted
C
Parameter
Symbol
Limit
100
Unit
Drain-Source Voltage
Gate-Source Voltage
V
DS
V
V
GS
± 20
T
C
= 25 °C
150
100
a
Continuous Drain Current (T
J
= 175 °C)
I
D
T
C
= 125 °C
A
Pulsed Drain Current
Avalanche Current
I
DM
I
AR
600
75
Repetitive Avalanche Energy
b
L = 0.1 mH
T
C
= 25 °C
E
AR
280
375
c
mJ
W
Maximum Power Dissipation
b
P
D
T
A
= 25 °C
3.75
Operating Junction and Storage
T
e
mperature Range
T
J
, T
stg
– 55 to 175
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
R
thJA
Limit
40
Unit
Junction-to-Ambient
TO-247
°C/W
Junction-to-Case (Drain)
R
thJC
0.5
Notes:
a. Package limited.
b. Duty cycle
≤
1 %.
c. See SOA curve for voltage derating.
服务热线：400-655-8788
1
IRFP4410ZPBF
SPECIFICATIONS
T =
25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
V
DS
V
GS(th)
I
GSS
V
DS
= 0
V
,
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
100
2
V
4
± 100
1
V
DS
= 0
V
,
V
GS
= ± 20 V
nA
V
DS
= 100
V
,
V
GS
= 0 V
Zero Gate Voltage Drain Current
On-State Drain Current
a
I
DSS
I
D(on)
R
DS(on)
g
fs
V
DS
= 100
V
,
V
GS
= 0
V
,
T
J
= 125 °C
V
DS
= 100
V
,
V
GS
= 0
V
,
T
J
= 175 °C
V
DS
≥
5
V
,
V
GS
= 10 V
50
µA
A
250
120
25
V
GS
= 10
V
,
I
D
= 30 A
0.00
6
0.017
0.025
Drain-Source On-State Resistance
a
V
GS
= 10
V
,
I
D
= 30 A, T
J
= 125 °C
V
GS
= 10
V
,
I
D
= 30 A, T
J
= 175 °C
V
DS
= 15
V
,
I
D
= 30 A
Ω
S
Forward
T
r
ansconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse
T
r
ansfer Capacitance
T
o
tal Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Gate Resistance
T
u
rn-On Delay Time
c
Rise Time
c
T
u
rn-Off Delay Time
c
Fall Time
c
C
iss
C
oss
C
rss
Q
g
6700
750
280
110
24
V
GS
= 0
V
,
V
DS
= 25
V
, f = 1
M
Hz
V
DS
= 50
V
,
V
GS
= 10
V
,
I
D
= 85 A
pF
160
Q
gs
Q
gd
R
g
nC
24
1.0
6.2
30
Ω
t
d(on)
t
r
t
d(off)
t
f
20
125
55
200
85
V
DD
= 50
V
,
R
L
= 0.6
Ω
ns
I
D
≅
85 A, V
GEN
= 10
V
,
R
g
= 2.5
Ω
130
195
Source-Drain Diode Ratin
g
s and Characteristics
T
C
= 25 °C
b
Continuous Current
I
S
I
SM
110
240
1.5
A
Pulsed Current
Forward Voltage
a
V
SD
t
rr
I
F
= 85 A, V
GS
= 0 V
1.0
70
V
ns
A
Reverse Recovery Time
Peak Reverse Recovery Charge
Reverse Recovery Charge
140
10
I
RM(REC)
Q
rr
I
F
= 50 A, dI/dt = 100 A/µs
5.5
0.19
0.35
µC
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
服务热线：400-655-8788
2
IRFP4410ZPBF
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
250
200
150
100
50
250
6
V
V
GS
= 10
V
thr
u
7
V
200
150
100
50
T
= 125 °C
C
5
V
– 55 °C
25 °C
4
V
0
0
0
0
1
2
3
4
5
6
7
2
4
6
8
10
V
– Gate-to-So
u
rce
V
oltage (
V
)
V
DS
– Drain-to-So
u
rce
V
oltage
GS
Transfer Characteristics
Output Characteristics
0.015
0.012
0.009
0.006
0.003
0.000
250
200
150
100
50
T
= – 55 °C
25 °C
C
V
GS
= 10
V
125 °C
0
0
20
40
I
60
8
0
100
120
0
20
40
60
8
0
100
120
– Drain C
u
rrent (A)
I
D
– Drain C
u
rrent (A)
D
On-Resistance vs. Drain Current
Transconductance
20
16
12
8
10 000
8
000
6000
4000
2000
0
V
= 50
V
=
8
5 A
DS
I
D
C
iss
4
C
oss
C
rss
0
0
50
100
150
200
0
25
50
75
100
Q
–
T
o
tal Gate Charge (nC)
V
DS
– Drain-to-So
u
rce
V
oltage (
V
)
g
Gate Char
g
e
Capacitance
服务热线：400-655-8788
3
IRFP4410ZPBF
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
3.0
100
V
= 10
V
= 30 A
GS
I
D
2.5
2.0
1.5
1.0
0.5
0.0
T =
150 °C
J
T =
25 °C
J
10
1
– 50
– 25
0
25
50
75 100 125 150 175
0
0.3
0.6
0.9
1.2
T
– J
u
nction Temperat
u
re (°C)
J
V
SD
– S
o
u
rce-to-Drain
V
oltage (
V
)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Volta
g
e
1000
100
125
120
115
110
105
100
95
I
= 10 mA
D
I
A
V
(A) at T
= 25 °C
A
10
1
I
A
V
(A) at T
= 150 °C
A
0.1
90
– 50
– 25
0
25
50
75 100 125 150 175
0.00001
0.0001
0.001
t
0.01
0.1
1
(s)
in
T
– J
u
nction Temperat
u
re (°C)
J
Avalanche Current vs. Time
Drain Source Breakdown
vs. Junction Temperature
服务热线：400-655-8788
4
IRFP4410ZPBF
THERMAL RATINGS
120
1000
100
10
100
8
0
60
40
20
0
10
µ
s
100
µ
s
Limited
b
y R
*
DS(on)
1 ms
10 ms
100 ms, DC
1
T
= 25 °C
C
Single P
u
lse
0.1
0
25
50
75
100
125
150
175
0.1
1
10
100
1000
V
– Drain-to-So
u
rce
V
oltage (
V
)
DS
T
– Am
b
ient
T
e
mperat
u
re (°C)
C
*
V
GS
minim
u
m
V
at
w
hich R
is specified
DS(on)
GS
Maximum Avalanche and Drain Current
vs. Case Temperature
Safe Operatin
g
Area
2
1
D
u
ty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single P
u
lse
0.01
-4
-3
-2
-1
10
10
10
S
qu
are
W
a
v
e P
u
lse D
u
ration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
10
1
10
服务热线：400-655-8788
5
IRFP4410ZPBF
TO-247AC
A
A
4
E
7
M
ØP
M
D B
(Datum B)
ØP1
B
A2
A
E/2
S
Ø k
R/2
3
D2
Q
4
4
2 x R
(2)
D1
D
4
D
1
2
3
Thermal pad
5
L1
C
L
4
E1
A
See view B
M
M
0.01 D
B
2 x b2
3 x b
View A – A
C
2 x
e
A1
b4
M
M
0.10 C
A
(b1, b3, b5)
Planting
Base metal
Lead Assignments
1. Gate
D D
E
E
2. Drain
3. Source
4. Drain
(c)
c1
C
C
(b, b2, b4)
(4)
Section C – C, D – D, E – E
View B
MILLIMETERS
INCHES
MILLIMETERS
INCHES
MIN.
0.020
0.602
0.540
DIM.
A
A1
A2
b
b1
b2
b3
b4
b5
c
MIN.
4.58
2.21
1.17
0.99
0.99
1.53
1.65
2.42
2.59
0.38
0.38
19.71
13.08
MAX.
MIN.
0.180
0.087
0.046
0.039
0.039
0.060
0.065
0.095
0.102
0.015
0.015
0.776
0.515
MAX.
0.209
0.102
0.098
0.055
0.053
0.094
0.093
0.135
0.133
0.034
0.030
0.820
–
DIM.
D2
E
E1
e
Ø k
L
L1
N
Ø P
Ø P1
Q
R
S
MIN.
0.51
15.29
13.72
MAX.
MAX.
0.051
0.625
–
5.31
2.59
2.49
1.40
1.35
2.39
2.37
3.43
3.38
0.86
0.76
20.82
–
1.30
15.87
–
5.46 BSC
0.254
0.215 BSC
0.010
14.20
3.71
16.25
4.29
0.559
0.146
0.640
0.169
7.62 BSC
3.51
0.300 BSC
3.66
7.39
5.69
5.49
0.138
–
0.209
0.178
0.144
0.291
0.224
0.216
–
c1
D
D1
5.31
4.52
5.51 BSC
0.217 BSC
服务热线：400-655-8788
6
IRFP4410ZPBF
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T
aiwan VBsemi”), assumes no responsibility for any errors, inaccuracies or
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t
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aiwan
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