VBsemi-Elec-IRFR3709ZCT-VB
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IRFR3709ZCT
N-Channel 30-V (D-S) MOSFET
FEATURES
TrenchFET
®
Power MOSFET
PRODUCT SUMMARY
•
•
•
V
DS
(V)
R
DS(on)
(
)
Q
g
(Typ)
I
D
(A)
a, e
100
100 % R
g
and UIS Tested
Compliant to RoHS Directive 2011/65/EU
0.00
2
at V
GS
= 10 V
0.00
3
at V
GS
= 4.5 V
30
7
2 nC
90
APPLICATIONS
D
•
•
•
OR-ing
Server
DC/DC
TO-252
G
G
D
S
Top View
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(T =
25 °C, unless otherwise noted)
A
Parameter
Symbol
Limit
30
Unit
V
DS
Drain-Source Voltage
Gate-Source Voltage
V
V
GS
± 20
100
a, e
80
e
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Continuous Drain Current (T
J
= 175 °C)
I
D
35
.8
b, c
A
2
7
b, c
300
3
9
I
DM
I
AS
Pulsed Drain Current
Avalanche Current Pulse
Single Pulse Avalanche Energy
L = 0.1 mH
E
AS
9
4.8
90
a, e
mJ
T
C
= 25 °C
T
A
= 25 °C
T
C
= 25 °C
I
S
Continuous Source-Drain Diode Current
A
3.13
b, c
235
a
165
T
C
= 70 °C
A
= 25 °C
P
D
Maximum Power Dissipation
W
3.75
b, c
T
2.63
b, c
T
A
= 70 °C
T
J
, T
stg
Operating Junction and Storage
T
e
mperature Range
– 55 to 175
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typ.
32
Max.
40
Unit
Maximum Junction-to-Ambient
b, d
Maximum Junction-to-Case
R
thJA
t
10 sec
°C/W
R
thJC
Steady State
0.5
0.6
Notes:
a. Based on T
C
= 25 °C.
b. Surface mounted on 1″ x 1″ FR4 board.
c. t = 10 sec.
d. Maximum under steady state conditions is 90 °C/W.
e. Calculated based on maximum junction temperature. Package limitation current is 90 A.
1
1
IRFR3709ZCT
SPECIFICATIONS
(T =
25 °C, unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
V
GS
= 0
V
,
I
D
= 250 µA
I
D
= 250 µA
Drain-Source Breakdown Voltage
30
V
V
DS
T
e
mperature Coefficient
35
mV/°C
V
GS(th)
T
e
mperature Coefficient
– 7.5
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0
V
,
V
GS
= ± 20 V
V
DS
= 30
V
,
V
GS
= 0 V
Gate-Source Threshold Voltage
Gate-Source Leakage
1.5
90
2.5
± 100
1
V
I
GSS
nA
I
DSS
I
D(on)
R
DS(on)
g
fs
Zero Gate Voltage Drain Current
On-State Drain Current
a
µA
A
V
DS
= 30
V
,
V
GS
= 0
V
,
T
J
= 55 °C
V
DS
5
V
,
V
GS
= 10 V
10
V
GS
= 10 V, I
D
=
3
8.8 A
V
GS
= 4.5 V, I
D
=
3
7 A
0.00
2
0.00
3
160
Drain-Source On-State Resistance
a
S
Forward
T
r
ansconductance
a
Dynamic
b
V
DS
= 15 V, I
D
=
3
8.8 A
C
iss
C
oss
C
rss
Input Capacitance
5201
1525
770
151
71.5
30
V
DS
= 15
V
,
V
GS
= 0
V
, f = 1
M
Hz
V
DS
= 15 V, V
GS
= 10 V, I
D
=
3
8.8 A
V
DS
= 15 V, V
GS
= 4.5 V, I
D
=
2
8.8 A
f = 1 MHz
Output Capacitance
Reverse
T
r
ansfer Capacitance
pF
227
103
Q
g
T
o
tal Gate Charge
nC
Q
gs
Q
gd
R
g
Gate-Source Charge
Gate-Drain Charge
24
Gate Resistance
1.4
18
2.1
27
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
T
u
rn-On Delay Time
Rise Time
11
17
V
DD
= 15
V
,
R
L
= 0.625
I
D
24 A, V
GEN
= 10
V
,
R
g
= 1
T
u
rn-Off Delay Time
70
105
15
Fall Time
10
ns
T
u
rn-On Delay Time
55
83
Rise Time
180
55
270
83
V
DD
= 15
V
,
R
L
= 0.67
I
D
22.5 A, V
GEN
= 4.5
V
,
R
g
= 1
T
u
rn-Off Delay Time
Fall Time
12
18
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
a
Body Diode Voltage
I
S
I
SM
V
SD
t
rr
T
C
= 25 °C
I
S
= 22 A
120
120
1.2
78
A
0.8
52
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ns
nC
Q
rr
t
a
70.2
27
105
I
F
= 20 A, di/dt = 100 A/µs, T
J
= 25 °C
ns
t
b
25
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
2
IRFR3709ZCT
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
90
75
60
45
30
15
0
3.0
2.4
1.
8
1.2
0.6
0.0
V
= 10
V
thr
u
4
V
GS
T
= 25 °C
C
T
C
= 125 °C
V
GS
= 2
V
V
GS
= 3
V
T
C
= – 55 °C
0.0
0.5
1.0
1.5
2.0
2.5
0
1
2
3
4
V
DS
– Drain-to-So
u
rce
V
oltage (
V
)
V
GS
– Gate-to-So
u
rce
V
oltage (
V
)
Output Characteristics
Transfer Characteristics
600
500
400
300
200
100
0
0.00
60
0.00
50
0.00
4
0
0.00
3
0
0.00
20
0.00
10
0.00
0
T
= 25 °C
C
T
= 125 °C
= – 55 °C
C
V
= 4.5
V
= 10
V
GS
V
GS
T
C
0
10
20
30
40
50
60
70
8
0
90
0
15
30
45
60
75
90
I
D
– Drain
C
u
rrent (A)
I
D
– Drain
C
u
rrent (A)
Transconductance
R
DS(on)
vs. Drain Current
8
000
6
000
4
000
2
000
1
000
0
10
8
V
DS
= 15
V
I
D
=
3
8
.
8
A
C
iss
V
DS
= 24
V
6
4
C
oss
2
C
rss
0
0
6
12
1
8
24
30
0
30
60
90
120
150
1
8
0
V
DS
– Drain-to-So
u
rce
V
oltage (
V
)
Q
–
T
o
tal
Gate Charge (nC)
g
Capacitance
Gate Charge
3
3
IRFR3709ZCT
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
1.
2
1.
0
0
.
8
0
.
6
0.
4
0.
2
V
= 10
V
, I
=
3
8
.
8
A
GS
D
V
= 4.5
V
, I
= 27 A
GS
D
10
1
T
= 150 °C
J
T
= 25 °C
J
0.1
0.01
0.001
0
0.2
0.4
– So
u
rce-to-Drain
V
oltage (
V
)
SD
0.6
0.
8
1
– 50
– 25
0
25
50
75 100
125 150 175
V
T
– J
u
nction
T
e
mperat
u
re (°C)
J
On-Resistance vs. Junction Temperature
Forward Diode Voltage vs. Temperature
0.005
0.004
0.003
0.002
0.001
0.000
2.
8
2.4
2.0
1.6
1.2
0.
8
I
=
3
8
.
8
A
D
T
A
= 125 °C
I
D
= 250
µ
A
T
= 25 °C
A
0
2
4
6
8
10
– 50
– 25
0
25
50
75 100
125 150
175
V
GS
– Gate-to-So
u
rce
V
oltage (
V
)
T
J
–
T
e
mperat
u
re (°C)
R
DS(on)
vs. V
GS
vs. Temperature
Threshold Voltage
1000
*Limited by r
DS (on)
100
10
10 ms
100 ms
1
0.1
1 s
10 s
dc
0.01
T
= 25 °C
A
Single Pulse
0.001
0.1
1
10
100
V
DS
– Drain-to-Source Voltage (V)
*V
GS
minimum V
at which r
is specified
GS
DS(on)
Safe Operating Area, Junction-to-Ambient
4
4
IRFR3709ZCT
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
300
250
200
150
100
50
300
250
200
150
100
50
Package Limited
0
0
0
25
50
75
100
125
150
175
0
25
50
75
100
125
150
175
T
T
C
– Case
T
e
mperat
u
re (°C)
– Case
T
e
mperat
u
re (°C)
C
Current Derating*
Power Derating
*The power dissipation P
D
is based on T
J(max)
= 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
–
4
–
3
10
–
2
10
–
1
10
10
1
10
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
5
5
IRFR3709ZCT
TO-252AA CASE OUTLINE
E
A
MILLIMETERS
INCHES
C2
b3
DIM.
A
MIN.
MAX.
2.38
0.127
0.88
1.14
5.46
0.61
0.89
6.22
–
MIN.
MAX.
0.094
0.005
0.035
0.045
0.215
0.024
0.035
0.245
–
2.18
–
0.086
–
A1
b
0.64
0.76
4.95
0.46
0.46
5.97
5.21
6.35
4.32
9.40
0.025
0.030
0.195
0.018
0.018
0.235
0.205
0.250
0.170
0.370
b2
b3
C
C2
D
D1
E
6.73
–
0.265
–
E1
H
b
C
b2
e
10.41
0.410
A1
e1
e
2.28 BSC
4.56 BSC
1.40
0.090 BSC
0.180 BSC
e1
L
1.78
1.27
1.02
1.52
0.055
0.070
0.050
0.040
0.060
L3
L4
L5
0.89
–
0.035
–
1.14
0.045
ECN:
X12-0247
-Rev. M, 24-Dec-12
DWG: 5347
E1
Note
Dimension L3 is for reference only.
•
6
6
IRFR3709ZCT
Disclaimer
All products due to improve reliability, function or design or for other reasons, product specifications and
data are subject to change without notice.
Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their
representatives (collectively, the “
T
aiwan VBsemi”), assumes no responsibility for any errors, inaccuracies or
incomplete data contained in the table or any other any disclosure of any information related to the
Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of
any goods or continuous production.
T
o
t
he maximum extent permitted by applicable law on
T
aiwan VBsemi
relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability,
including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties,
including a particular purpose, non-infringement and merchantability guarantee.
Statement on certain types of applications are based on knowledge of the product is often used in a typical
application of the general product VBsemi
T
aiwan demand that the Taiwan VBsemi of. Statement on whether the
product is suitable for a particular application is non-binding. It is the customer’s responsibility to verify specific
product features in the products described in the specification is appropriate for use in a particular application.
Parameter data sheets and technical specifications can be provided may vary depending on the application and
performance over time. All operating parameters, including typical parameters must be made by customer’s
technical experts validated for each customer application. Product specifications do not expand or modify
T
aiwan
VBsemi purchasing terms and conditions, including but not limited to warranty herein.
Unless expressly stated in writing,
T
aiwan VBsemi products are not intended for use in medical, life saving,
or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal
injury or death, use or sale of products used in
T
aiwan VBsemi such applications using client did not express their
own risk. Contact your authorized
T
aiwan VBsemi people who are related to product design applications and
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The information provided in this document and the company’s products without a license, express or implied,
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names and trademarks referred to herein are trademarks of their respective representatives will be all.
Material Category Policy
Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be
RoHS compliant and meets the definition of restrictions under Directive of the European Parliament
2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and
electronic equipment (EEE) – modification, unless otherwise specified as
inconsistent.(www.VBsemi.com)
Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We
confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive
2011/65 /.
Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as
halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese
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conform to confirm compliance with IEC 61249-2-21 standard level JS709A.
7
