VBsemi-Elec-IRFS3207PBF-VB
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IRFS3207PBF
N-Channel 80 V (D-S) MOSFET
FEATURES
• TrenchFET
®
power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(
Ω
) MAX.
I
D
(A)
215
Q
g
(TYP.)
• Maximum 175 °C junction temperature
0.00
50
at V
GS
= 10 V
0.00
9
5
at V
GS
= 7.5 V
• Very low Q
gd
reduces power loss from passing
through V
plateau
80
94
205
• 100 % R
g
and UIS tested
APPLICATIONS
D
D
2
PAK
• Power supply
– Secondary synchronous rectification
(TO-263)
• DC/DC converter
• Power tools
G
G
D
• Motor drive switch
• DC/AC inverter
S
• Battery management
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
80
UNIT
Drain-Source Voltage
Gate-Source Voltage
V
DS
V
V
GS
20
T
C
= 25 °C
C
= 70 °C
215
Continuous Drain Current (T
J
= 150 °C)
I
D
T
120
d
600
A
Pulsed Drain Current (t = 100 μs)
Avalanche Current
I
DM
I
AS
70
Single Avalanche Energy
a
L = 0.1 mH
T
C
= 25 °C
T
C
= 125 °C
E
AS
245
mJ
W
375
b
125
b
-55 to +175
Maximum Power Dissipation
a
P
D
Operating Junction and Storage Temperature Range
T
J
, T
stg
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
R
thJA
LIMIT
40
UNIT
Junction-to-Ambient (PCB Mount)
c
°C/W
Junction-to-Case (Drain)
R
thJC
0.4
Notes
a. Duty
cycle
≤
1 %.
b. See
SOA curve for voltage derating.
c. When
mounted on 1″ square PCB (FR4 material).
d. Package
limited.
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1
IRFS3207PBF
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V
DS
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
80
–
–
V
2
–
4
V
DS
= 0 V, V
GS
=
20 V
–
–
250
1
nA
μA
V
DS
= 80 V, V
GS
= 0 V
DS
= 80 V, V
GS
= 0 V, T
J
= 125 °C
DS
= 80 V, V
GS
= 0 V, T
J
= 175 °C
V
DS
≥
10 V, V
GS
= 10 V
–
–
Zero Gate Voltage Drain Current
I
DSS
V
V
–
–
–
150
–
–
5
–
mA
A
On-State Drain Current
a
I
D(on)
R
DS(on)
g
fs
120
–
V
GS
= 10 V, I
D
= 30 A
0.0050
0.0095
82
–
Drain-Source On-State Resistance
a
Ω
V
GS
= 7.5 V, I
D
= 20 A
–
–
–
–
Forward Transconductance
a
Dynamic
b
V
DS
= 15 V, I
D
= 30 A
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Gate Resistance
C
iss
C
oss
C
rss
Q
g
–
7910
3250
348
94
–
–
V
GS
= 0 V, V
DS
= 40 V, f = 1 MHz
–
pF
–
–
–
141
–
Q
gs
Q
gd
R
g
V
DS
= 40 V, V
GS
= 10 V, I
D
= 20 A
f = 1 MHz
–
31
nC
–
10
–
0.28
1.4
24
2.8
40
40
60
28
Ω
Turn-On Delay Time
c
Rise Time
c
t
d(on)
t
r
t
d(off)
t
f
–
–
–
–
24
V
DD
= 40 V, R
L
= 4
Ω
ns
I
D
≅
10 A, V
GEN
= 10 V, R
g
= 1
Ω
Turn-Off Delay Time
c
Fall Time
c
34
14
Drain-Source Body Diode Ratings and Characteristics
b
(T
C
= 25 °C)
Pulsed Current (t = 100 μs)
Forward Voltage
a
I
SM
V
SD
–
–
–
–
–
–
0.8
126
5
250
1.5
A
V
I
F
= 10 A, V
GS
= 0 V
Reverse Recovery Time
Peak Reverse Recovery Charge
Reverse Recovery Charge
t
rr
190
10
ns
A
I
RM(REC)
Q
rr
I
F
= 34 A, di/dt = 100 A/μs
0.315
0.475
μC
Notes
a. Pulse
test; pulse width
≤
300 μs, duty cycle
≤
2 %.
b. Guaranteed
by design, not subject to production testing.
c. Independent
of operating temperature.
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2
IRFS3207PBF
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
100
250
V
GS
= 10 V thru 7 V
T
C
= 25
°
C
80
200
60
150
V
GS
= 6 V
T
C
= 125
°
C
40
20
0
100
50
0
T
C
= – 55
°
C
V
GS
= 4 V
0
1
2
3
4
0
2
4
6
8
V
D
S
– Drain-to-
S
ource Voltage (V)
V
GS
–
G
ate-to-
S
ource Voltage (V)
Output Characteristics
Transfer Characteristics
120
90
60
30
0
0.0055
0.0050
0.0045
0.0040
0.0035
0.0030
0.0025
T
C
= 25
°
C
T
C
= – 55
°
C
V
GS
=7.5 V
V
GS
= 10 V
T
C
= 125
°
C
0
20
40
60
80
100
0
6
12
18
24
30
I
D
– Drain Current (A)
I
D
– Drain Current (A)
Transconductance
On-Resistance vs. Drain Current
11000
8800
6600
4400
2200
0
10
8
I
D
= 20 A
V
D
S
= 20 V
C
i
ss
V
D
S
= 40 V
6
V
D
S
= 64 V
4
C
o
ss
2
C
r
ss
0
0
20
40
60
80
100
0
20
40
60
80
Q
g
– Total
G
ate Charge (nC)
V
D
S
– Drain-to-
S
ource Voltage (V)
Capacitance
Gate Charge
服务热线：400-655-8788
3
IRFS3207PBF
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
100
10
1
1.95
1.70
1.45
1.20
0.95
0.70
T
J
= 15
0
°
C
V
GS
= 10 V, I
D
=30 A
V
GS
= 7.5 V
I
D
=30 A
T
J
= 25
°
C
0.1
0.0
– 50
– 25
0
25
50
75
100 125 150 175
0.2
0.4
0.6
0.8
1.0
1.2
T
J
– Junction Temperature (
°
C)
V
S
D
–
S
ourc
e
–
to-Drain Voltage (V)
On-Resistance vs. Junction Temperature
Source Drain Diode Forward Voltage
0.010
0.008
0.006
0.004
0.002
0
3.5
3.1
2.7
2.3
1.9
1.5
1.1
I
D
= 30 A
I
D
= 250 μA
T
J
= 125
°C
T
J
= 25 °C
– 50
– 25
0
25
50
75
100 125 150 175
3
4.5
6
7.5
9
T
J
– Temperature (
°
C)
V
GS
–
G
ate -t
o
–
S
ource Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage
100
97
94
91
88
85
300
250
200
150
100
50
I
D
= 250 μA
0
0
25
50
75
100
125
150
175
– 50
– 25
0
25
50
75 100
125 150 175
T
C
– Ca
s
e Temperature (
°
C)
T
J
– Temperature
(
°
C)
Drain Source Breakdown vs. Junction Temperature
Current De-rating
服务热线：400-655-8788
4
IRFS3207PBF
THERMAL RATINGS
(T
A
= 25 °C, unless otherwise noted)
1000
100
10
100
I
DM
Limited
10 μ
s
I
D
Limited
100 μ
s
Limited by R
*
1
D
S
(on)
25 °C
1 m
s
0.1
150 °C
T
C
= 25°C
S
ingle Pul
s
e
10 m
s
BVD
SS
Limited
10
100 m
s
DC
0.01
10
0.1
1
100
0.000001
0.00001
0.0001
0.001
0.01
V
D
S
– Drai
n
–
to-
S
ource Voltage (V)
*
V
GS
> minimum V
GS
at which R
D
S
(on)
i
s s
pecified
Time (
s
)
Single Pulse Avalanche Current Capability vs. Time
Safe Operating Area
1
0.1
0.01
0.001
0.0001
10
-4
10
-3
10
-2
10
-1
Sq
uare Wave Pul
s
e Duration (
s
)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
10
100
1000
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5
IRFS3207PBF
THERMAL RATINGS
(T
A
= 25 °C, unless otherwise noted)
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Note
•
The characteristics shown in the two graphs
– Normalized Transient Thermal Impedance Junction to Ambient (25 °C)
– Normalized Transient Thermal Impedance Junction to Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board – FR4, size 1″ x 1″ x 0.062″, double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
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IRFS3207PBF
TO-263AB
A
B
(Dat
u
m A)
3
4
A
A
E
c2
H
L1
4
Ga
u
ge
plane
4
0° to
8
°
B
5
Detail A
Seating plane
D
H
L
C
C
A1
L3
L4
Detail “A”
1
2
3
L2
Rotated 90° CW
B
B
scale
8
:1
A
2 x
b
2
2 x
b
c
E
M
M
B
0.010
A
M
± 0.004
B
2 x e
Base
metal
5
D1
4
Plating
(c)
b
1,
b
3
5
c1
(
b
,
b
2)
Lead tip
4
E1
Section B – B and C – C
Scale: none
V
ie
w
A – A
MILLIMETERS
INCHES
MILLIMETERS
INCHES
DIM.
A
MIN.
4.06
0.00
0.51
0.51
1.14
1.14
0.38
0.38
1.14
8.38
MAX.
4.83
0.25
0.99
0.89
1.78
1.73
0.74
0.58
1.65
9.65
MIN.
0.160
0.000
0.020
0.020
0.045
0.045
0.015
0.015
0.045
0.330
MAX.
0.190
0.010
0.039
0.035
0.070
0.068
0.029
0.023
0.065
0.380
DIM.
D1
E
MIN.
6.86
MAX.
MIN.
MAX.
–
10.67
–
0.270
0.380
0.245
–
0.420
–
A1
b
9.65
6.22
E1
e
b1
b2
b3
c
2.54 BSC
0.100 BSC
H
14.61
15.88
2.79
1.65
1.78
0.575
0.625
0.110
0.066
0.070
L
1.78
0.070
L1
L2
L3
L4
–
–
–
–
c1
c2
D
0.25 BSC
0.010 BSC
4.78
5.28
0.188
0.208
ECN: S-82110-Rev. A, 15-Sep-08
D
W
G: 5970
Notes
1. Dimensioning and tolerancing per ASME Y14.5M-1994.
2. Dimensions are shown in millimeters (inches).
3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005″) per side. These dimensions are measured at the
outmost extremes of the plastic body at datum A.
4. Thermal PAD contour optional within dimension E, L1, D1 and E1.
5. Dimension b1 and c1 apply to base metal only.
6. Datum A and B to be determined at datum plane H.
7. Outline conforms to JEDEC outline to TO-263AB.
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IRFS3207PBF
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All products due to improve reliability, function or design or for other reasons, product specifications and
data are subject to change without notice.
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representatives (collectively, the “
T
aiwan VBsemi”), assumes no responsibility for any errors, inaccuracies or
incomplete data contained in the table or any other any disclosure of any information related to the
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any goods or continuous production.
T
o
t
he maximum extent permitted by applicable law on
T
aiwan VBsemi
relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability,
including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties,
including a particular purpose, non-infringement and merchantability guarantee.
Statement on certain types of applications are based on knowledge of the product is often used in a typical
application of the general product VBsemi
T
aiwan demand that the Taiwan VBsemi of. Statement on whether the
product is suitable for a particular application is non-binding. It is the customer’s responsibility to verify specific
product features in the products described in the specification is appropriate for use in a particular application.
Parameter data sheets and technical specifications can be provided may vary depending on the application and
performance over time. All operating parameters, including typical parameters must be made by customer’s
technical experts validated for each customer application. Product specifications do not expand or modify
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aiwan
VBsemi purchasing terms and conditions, including but not limited to warranty herein.
Unless expressly stated in writing,
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aiwan VBsemi products are not intended for use in medical, life saving,
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aiwan VBsemi such applications using client did not express their
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aiwan VBsemi people who are related to product design applications and
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RoHS compliant and meets the definition of restrictions under Directive of the European Parliament
2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and
electronic equipment (EEE) – modification, unless otherwise specified as
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Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We
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