VBsemi-Elec-IRFS4321PBF-VB
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S4321PBF
N-Channel 140 V (D-S) MOSFET
FEATURES
• ThunderFET
®
power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(
) MAX.
0.0105 at V
GS
= 10 V
0.0125 at V
GS
= 7.5 V
I
D
(A)
100
90
Q
g
(TYP.)
• Maximum 175 °C junction temperature
• 100 % R
g
and UIS tested
140
63 nC
APPLICATIONS
• Power supplies:
– Uninterruptible power supplies
– AC/DC switch-mode power supplies
– Lighting
D
TO-263
• Synchronous rectification
• DC/DC converter
G
• Motor drive switch
• DC/AC inverter
S
D
• Solar micro inverter
• Class D audio amplifier
• Battery management
S
Top View
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
140
UNIT
Drain-Source Voltage
Gate-Source Voltage
V
DS
V
V
GS
20
T
C
= 25 °C
100
Continuous Drain Current (T
J
= 150 °C)
I
D
70
T
C
= 125 °C
A
Pulsed Drain Current (t = 100 μs)
Avalanche Current
I
DM
I
AS
240
60
L = 0.1 mH
Single Avalanche Energy
a
E
AS
180
mJ
W
T
C
= 25 °C
305
b
105
b
-55 to +175
Maximum Power Dissipation
a
P
D
T
C
= 125 °C
Operating Junction and Storage Temperature Range
T
J
, T
stg
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
R
thJA
LIMIT
40
UNIT
Junction-to-Ambient (PCB Mount)
c
°C/W
Junction-to-Case (Drain)
R
thJC
0.4
Notes
a. Duty
cycle
1 %.
b. See
SOA curve for voltage derating.
c. When
mounted on 1″ square PCB (FR4 material).
服务热线：400-655-8788
1
IRFS4321PBF
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
–
5
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V
DS
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
140
–
V
2
–
–
V
DS
= 0 V, V
GS
=
20 V
–
250
1
nA
μA
V
DS
= 150 V, V
GS
= 0 V
V
DS
= 150 V, V
GS
= 0 V, T
J
= 125 °C
V
DS
= 150 V, V
GS
= 0 V, T
J
= 175 °C
V
DS
10 V, V
GS
= 10 V
–
–
Zero Gate Voltage Drain Current
I
DSS
–
–
100
2
–
–
mA
A
On-State Drain Current
a
I
D(on)
R
DS(on)
g
fs
90
–
–
–
V
GS
= 10 V, I
D
= 30 A
0.0105
0.0125
52
–
–
Drain-Source On-State Resistance
a
V
GS
= 7.5 V, I
D
= 30 A
–
–
Forward Transconductance
a
Dynamic
b
V
DS
= 15 V, I
D
= 30 A
–
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Gate Resistance
C
iss
C
oss
C
rss
Q
g
–
–
3425
535
26
–
–
V
GS
= 0 V, V
DS
= 75 V, f = 1 MHz
pF
–
–
–
63
95
–
Q
gs
Q
gd
R
g
V
DS
= 75 V, V
GS
= 10 V, I
D
= 60 A
f = 1 MHz
–
19.5
20.5
3
nC
–
–
1.5
–
5
Turn-On Delay Time
c
Rise Time
c
t
d(on)
t
r
t
d(off)
t
f
15
30
220
56
16
–
114
28
V
DD
= 75 V, R
L
= 1.25
I
D
60 A, V
GEN
= 10 V, R
g
= 1
ns
Turn-Off Delay Time
c
Fall Time
c
–
–
8
Drain-Source Body Diode Ratings and Characteristics
b
(T
C
= 25 °C)
Pulsed Current (t = 100 μs)
Forward Voltage
a
I
SM
V
SD
–
–
–
–
–
–
240
1.2
220
20
A
V
I
F
= 30 A, V
GS
= 0 V
0.73
110
10
Reverse Recovery Time
Peak Reverse Recovery Charge
Reverse Recovery Charge
t
rr
ns
A
I
RM(REC)
Q
rr
I
F
= 30 A, di/dt = 100 A/μs
0.5
1
μC
Notes
a. Pulse
test; pulse width
300 μs, duty cycle
2 %.
b. Guaranteed
by design, not subject to production testing.
c. Independent
of operating temperature.
服务热线：400-655-8788
2
IRFS4321PBF
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
Axis Title
Axis Title
250
200
150
100
50
10000
1000
100
150
120
90
60
30
0
10000
1000
100
V
GS
= 10 V thru 8 V
V
GS
= 7 V
T
C
= 25 °C
V
GS
= 6 V
T
C
= 125 °C
V
GS
= 5 V
8
T
C
= -55 °C
0
10
10
10
0
0
0
2
4
6
10
0
0
0
2
4
6
8
V
DS
– Drain-to-Source Voltage (V)
2nd line
V
GS
– Gate-to-Source Voltage (V)
2nd line
Output Characteristics
Transfer Characteristics
Axis Title
Axis Title
75
60
45
30
15
0
10000
1000
100
0.014
0.013
0.012
0.011
0.010
0.009
10000
1000
100
T
C
= -55 °C
T
C
= 25 °C
V
GS
= 7.5 V
V
GS
= 10 V
T
C
= 125 °C
10
30.0
10
5.0
10.0
15.0
20.0
25.0
20
40
60
80
100
I
D
– Drain Current (A)
2nd line
I
D
– Drain Current (A)
2nd line
Transconductance
On-Resistance vs. Drain Current
Axis Title
Axis Title
7000
5600
4200
2800
1400
0
10000
10
8
10000
1000
100
I
D
= 60 A
1000
100
10
6
C
iss
V
DS
= 50 V, 75 V, 100 V
4
C
oss
2
C
rss
0
10
20
40
60
80
100
14
28
42
56
70
V
DS
– Drain-to-Source Voltage (V)
2nd line
Q
g
– Total Gate Charge (nC)
2nd line
Capacitance
Gate Charge
服务热线：400-655-8788
3
IRFS4321PBF
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
Axis Title
Axis Title
2.5
2.1
1.7
1.3
0.9
0.5
10000
1000
100
1.0
0.4
10000
1000
I
D
= 30 A
V
GS
= 10 V
-0.2
-0.8
-1.4
-2.0
I
D
= 5 mA
V
GS
= 7.5 V
100
10
I
D
= 250 μA
10
-50 -25
0
25 50 75
100 125 150 175
-50 -25
0
25 50 75
100 125 150 175
T
J
– Junction Temperature (°C)
2nd line
T
J
– Temperature (°C)
2nd line
On-Resistance vs. Junction Temperature
Threshold Voltage
Axis Title
Axis Title
200
190
180
170
160
10000
1000
100
0.05
0.04
0.03
0.02
0.01
0
10000
1000
100
I
D
= 250 μA
T
J
= 125 °C
T
J
= 25 °C
10
10
4
5
6
7
8
9
10
-50 -25
0
25 50 75
100 125 150 175
V
GS
– Gate-to-Source Voltage (V)
2nd line
T
J
– Temperature (°C)
2nd line
On-Resistance vs. Gate-to-Source Voltage
Drain Source Breakdown vs. Junction Temperature
Axis Title
Axis Title
100
10
10000
150
120
90
60
30
0
10000
1000
100
T
J
= 150 °C
1000
100
10
1
T
J
= 25 °C
0.1
0.01
0.001
10
0
0.2
0.4
0.6
0.8
1.0
1.2
0
25
50
75
100 125 150 175
V
SD
– Source-to-Drain Voltage (V)
2nd line
T
C
– Case Temperature (°C)
2nd line
Source Drain Diode Forward Voltage
Current De-Rating
服务热线：400-655-8788
4
IRFS4321PBF
THERMAL RATINGS
(T
A
= 25 °C, unless otherwise noted)
Axis Title
Axis Title
1000
100
10
10000
1000
100
100
10000
1000
100
I
DM
limited
I
D
limited
100 μs
25 °C
150 °C
1 ms
(1)
Limited by R
DS(on)
10 ms
100 ms, 1 s,
10 s, DC
1
T
C
= 25 °C
Single pulse
BVDSS limited
0.1
10
1000
10
0.00001
10
0.01
0.1
1
10
100
0.0001
0.001
V
DS
– Drain-to-Source Voltage (V)
> minimum V
GS
at which R
DS(on)
is specified
Time (s)
2nd line
(1)
V
GS
Safe Operating Area
I
DAV
vs. Time
Axis Title
1
10000
1000
100
Duty Cycle = 0.5
0.2
Notes:
P
DM
0.1
0.1
t
1
0.05
0.02
t
2
1. Duty cycle, D =
t
1
t
2
2. Per unit base = R
thJA
= 40 °C/W
Single pulse
(t)
3. T
JM
– T
A
= P
DM
Z
thJA
4. Surface mounted
0.01
0.001
10
1000
0.01
0.1
1
10
100
Square Wave Pulse Duration (s)
2nd line
Normalized Thermal Transient Impedance, Junction-to-Ambient
服务热线：400-655-8788
5
IRFS4321PBF
THERMAL RATINGS
(T
A
= 25 °C, unless otherwise noted)
Axis Title
1
10000
1000
100
Duty Cycle = 0.5
0.2
0.1
0.05
0.1
0.02
Single pulse
0.01
10
1
0.0001
0.001
0.01
0.1
Square Wave Pulse Duration (s)
2nd line
Normalized Thermal Transient Impedance, Junction-to-Case
Note
•
The characteristics shown in the two graphs
– Normalized Transient Thermal Impedance Junction to Ambient (25 °C)
– Normalized Transient Thermal Impedance Junction to Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board – FR4, size 1″ x 1″ x 0.062″, double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
服务热线：400-655-8788
6
IRFS4321PBF
TO-263 (D
2
PAK): 3-LEAD
-B-
A
E
c2
6
E1
K
-A-
E3
A
A
b2
b
c
Detail “A”
E2
e
M
M
A
0.010
PL
2
INCHES
MILLIMETERS
DIM.
A
MIN.
0.160
0.020
0.020
0.045
0.013
0.023
0.013
0.023
0.045
0.340
0.220
0.038
0.045
0.044
0.380
0.245
0.355
0.072
MAX.
0.190
0.039
0.035
0.055
0.018
0.028
0.017
0.027
0.055
0.380
0.240
0.042
0.055
0.052
0.410
–
MIN.
4.064
0.508
0.508
1.143
0.330
0.584
0.330
0.584
1.143
8.636
5.588
0.965
1.143
1.118
9.652
6.223
9.017
1.829
MAX.
4.826
0.990
0.889
1.397
0.457
0.711
0.431
0.685
1.397
9.652
6.096
1.067
1.397
1.321
10.414
–
0° – 5°
b
L1
b1
b2
DE
T
A
IL A (RO
T
A
T
ED 90°)
Thin lead
c*
Thick lead
Thin lead
b
c1
Thick lead
b1
c2
D
D1
D2
D3
D4
E
S
ECTION A-A
E1
E2
E3
e
0.375
0.078
9.525
1.981
0.100 BSC
2.54 BSC
K
0.045
0.575
0.090
0.040
0.050
0.055
0.625
0.110
0.055
0.070
1.143
14.605
2.286
1.016
1.270
1.397
15.875
2.794
1.397
1.778
Notes
L
1. Plane B includes maximum features of heat sink tab and plastic.
2. No more than 25 % of L1 can fall above seating plane by
max. 8
mils.
3. Pin-to-pin coplanarity max. 4 mils.
4. *: Thin lead is for SUB, SYB.
L1
L2
L3
L4
M
0.010 BSC
0.254 BSC
–
0.002
–
0.050
Thick lead is for SUM, SYM, SQM.
5. Use inches as the primary measurement.
6. This feature is for thick lead.
ECN: T13-0707-Rev. K, 30-Sep-13
DWG: 5843
服务热线：400-655-8788
7
IRFS4321PBF
2
RECOMMENDED MINIMUM PADS FOR D PAK:
3-Lead
0.420
(10.668)
0.145
(3.683)
0.135
(3.429)
0.200
0.050
(5.080)
(1.257)
Recommended Minimum Pads
Dimensions in Inches/(mm)
服务热线：400-655-8788
8
IRFS4321PBF
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T
aiwan VBsemi”), assumes no responsibility for any errors, inaccuracies or
incomplete data contained in the table or any other any disclosure of any information related to the
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any goods or continuous production.
T
o
t
he maximum extent permitted by applicable law on
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aiwan VBsemi
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including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties,
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Statement on certain types of applications are based on knowledge of the product is often used in a typical
application of the general product VBsemi
T
aiwan demand that the Taiwan VBsemi of. Statement on whether the
product is suitable for a particular application is non-binding. It is the customer’s responsibility to verify specific
product features in the products described in the specification is appropriate for use in a particular application.
Parameter data sheets and technical specifications can be provided may vary depending on the application and
performance over time. All operating parameters, including typical parameters must be made by customer’s
technical experts validated for each customer application. Product specifications do not expand or modify
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aiwan
VBsemi purchasing terms and conditions, including but not limited to warranty herein.
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aiwan VBsemi products are not intended for use in medical, life saving,
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RoHS compliant and meets the definition of restrictions under Directive of the European Parliament
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